KEXIN KI7540DP

IC
IC
SMD Type
N- and P-Channel 12-V (D-S) MOSFET
KI7540DP
Features
TrenchFET Power MOSFET
PWM Optimized for High Efficiency
Absolute Maximum Ratings TA = 25
Parameter
N-Channel
Symbol
10 secs
P-Channel
Steady State
10 secs
Unit
Steady State
Drain-Source Voltage
VDS
12
-12
V
Gate-Source Voltage
VGS
8
8
V
Continuous Drain Current (TJ = 150 )* TA = 25
ID
TA = 70
Pulsed Drain Current
11.8
7.6
-8.9
-5.7
A
9.5
6.1
-7.1
-4.6
A
20
IDM
Continuous Source Current (Diode Conduction)*
Maximum Power Dissipation*
TA = 25
IS
PD
TA = 70
Operating Junction and Storage Temperature Range
A
2.9
1.1
-2.9
-1.1
A
3.5
1.4
3.5
1.4
W
2.2
0.9
2.2
0.9
W
-55 to 150
TJ, Tstg
*Surface Mounted on 1" X 1" FR4 Board.
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient*
Symbol
t
10 sec
RthJA
Steady State
Maximum Junction-to-Case (Drain)
Steady State
RthJC
N-Channel
P-Channel
Unit
Typ
Max
Typ
Max
26
35
26
35
60
85
60
85
3.9
5.5
3.9
5.5
/W
*Surface Mounted on 1" X 1" FR4 Board.
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1
IC
IC
SMD Type
KI7540DP
Electrical Characteristics TJ = 25
Parameter
VGS( th)
Gate Threshold Voltage
IGSS
Gate Body Leakage
Zero Gate Voltage Drain Current
On State Drain Currenta
rDS(on)
Forward Transconductance*
gfs
Diode Forward Voltage*
VSD
Total Gate Charge
Qg
Gate Source Charge
Qgs
Gate Drain Charge
Qgd
Gate Resistance
RG
td(on)
Turn On Time
tr
Rise Time
Turn Off Delay Time
td( off)
Fall Time
tf
Source-Drain Reverse Recovery
Time
2
IDSS
ID(on)
Drain Source On State Resistance*
* Pulse test; pulse width
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Testconditons
Symbol
trr
Min
Typ
Max
VDS = VGS, ID = 250 A
N-Ch
0.6
1.5
VDS = VGS, ID = -250
P-Ch
-0.6
-1.5
A
VDS = 0 V VGS = 8 V
N-Ch
100
VDS = 0 V VGS = 8 V
P-Ch
100
VDS = 9.6V, VGS = 0 V
N-Ch
1
VDS = -9.6V, VGS = 0 V
P-Ch
-1
VDS = 20 V, VGS = 0 V, TJ = 55
N-Ch
5
VDS = -20V, VGS = 0 V, TJ = 55
P-Ch
-5
VDS
5 V, VGS = 4.5 V
N-Ch
20
VDS
-5 V, VGS = -4.5 V
P-Ch
-20
N-Ch
0.014 0.017
VGS = -4.5 V, ID = -8.9A
P-Ch
0.026 0.032
VGS = 2.5 V, ID = 9.8A
N-Ch
0.020 0.025
0.043 0.053
VGS = -2.5 V, ID = -6.9A
P-Ch
VDS = 5 V, ID = 11.8A
N-Ch
32
VDS = -5 V, ID = -8.9A
P-Ch
23
IS = 2.9A, VGS = 0 V
N-Ch
0.77
1.2
IS = -2.9A, VGS = 0 V
P-Ch
-0.8
-1.2
N-Channel
N-Ch
11.5
17
VDS = 6 V, VGS = 4.5V, ID = 11.8A
P-Ch
13
20
N-Ch
3.2
P-Channel
P-Ch
4.1
VDS = -6 V, VGS = -4.5 V, ID = -8.9A
N-Ch
2.5
P-Ch
1.9
N-Ch
1.7
P-Ch
3.5
30
45
VDD = 6 V, RL = 6
P-Ch
35
55
ID= 1A, VGEN = 4.5V, Rg = 6
N-Ch
50
75
P-Ch
42
65
P-Channel
N-Ch
60
90
VDD = -6 V, RL = 6
P-Ch
54
85
ID= -1 A, VGEN = -4.5 V, Rg = 6
N-Ch
25
40
P-Ch
17
30
IF =2.9 A, di/dt = 100 A/
N-Ch
40
80
P-Ch
40
80
300 s, duty cycle 2%.
A
V
nC
N-Ch
s
nA
S
N Channel
IF = -2.9 A, di/dt = 100 A/
V
A
VGS = 4.5 V, ID = 11.8A
s
Unit
ns