IC IC SMD Type N- and P-Channel 12-V (D-S) MOSFET KI7540DP Features TrenchFET Power MOSFET PWM Optimized for High Efficiency Absolute Maximum Ratings TA = 25 Parameter N-Channel Symbol 10 secs P-Channel Steady State 10 secs Unit Steady State Drain-Source Voltage VDS 12 -12 V Gate-Source Voltage VGS 8 8 V Continuous Drain Current (TJ = 150 )* TA = 25 ID TA = 70 Pulsed Drain Current 11.8 7.6 -8.9 -5.7 A 9.5 6.1 -7.1 -4.6 A 20 IDM Continuous Source Current (Diode Conduction)* Maximum Power Dissipation* TA = 25 IS PD TA = 70 Operating Junction and Storage Temperature Range A 2.9 1.1 -2.9 -1.1 A 3.5 1.4 3.5 1.4 W 2.2 0.9 2.2 0.9 W -55 to 150 TJ, Tstg *Surface Mounted on 1" X 1" FR4 Board. Thermal Resistance Ratings Parameter Maximum Junction-to-Ambient* Symbol t 10 sec RthJA Steady State Maximum Junction-to-Case (Drain) Steady State RthJC N-Channel P-Channel Unit Typ Max Typ Max 26 35 26 35 60 85 60 85 3.9 5.5 3.9 5.5 /W *Surface Mounted on 1" X 1" FR4 Board. www.kexin.com.cn 1 IC IC SMD Type KI7540DP Electrical Characteristics TJ = 25 Parameter VGS( th) Gate Threshold Voltage IGSS Gate Body Leakage Zero Gate Voltage Drain Current On State Drain Currenta rDS(on) Forward Transconductance* gfs Diode Forward Voltage* VSD Total Gate Charge Qg Gate Source Charge Qgs Gate Drain Charge Qgd Gate Resistance RG td(on) Turn On Time tr Rise Time Turn Off Delay Time td( off) Fall Time tf Source-Drain Reverse Recovery Time 2 IDSS ID(on) Drain Source On State Resistance* * Pulse test; pulse width www.kexin.com.cn Testconditons Symbol trr Min Typ Max VDS = VGS, ID = 250 A N-Ch 0.6 1.5 VDS = VGS, ID = -250 P-Ch -0.6 -1.5 A VDS = 0 V VGS = 8 V N-Ch 100 VDS = 0 V VGS = 8 V P-Ch 100 VDS = 9.6V, VGS = 0 V N-Ch 1 VDS = -9.6V, VGS = 0 V P-Ch -1 VDS = 20 V, VGS = 0 V, TJ = 55 N-Ch 5 VDS = -20V, VGS = 0 V, TJ = 55 P-Ch -5 VDS 5 V, VGS = 4.5 V N-Ch 20 VDS -5 V, VGS = -4.5 V P-Ch -20 N-Ch 0.014 0.017 VGS = -4.5 V, ID = -8.9A P-Ch 0.026 0.032 VGS = 2.5 V, ID = 9.8A N-Ch 0.020 0.025 0.043 0.053 VGS = -2.5 V, ID = -6.9A P-Ch VDS = 5 V, ID = 11.8A N-Ch 32 VDS = -5 V, ID = -8.9A P-Ch 23 IS = 2.9A, VGS = 0 V N-Ch 0.77 1.2 IS = -2.9A, VGS = 0 V P-Ch -0.8 -1.2 N-Channel N-Ch 11.5 17 VDS = 6 V, VGS = 4.5V, ID = 11.8A P-Ch 13 20 N-Ch 3.2 P-Channel P-Ch 4.1 VDS = -6 V, VGS = -4.5 V, ID = -8.9A N-Ch 2.5 P-Ch 1.9 N-Ch 1.7 P-Ch 3.5 30 45 VDD = 6 V, RL = 6 P-Ch 35 55 ID= 1A, VGEN = 4.5V, Rg = 6 N-Ch 50 75 P-Ch 42 65 P-Channel N-Ch 60 90 VDD = -6 V, RL = 6 P-Ch 54 85 ID= -1 A, VGEN = -4.5 V, Rg = 6 N-Ch 25 40 P-Ch 17 30 IF =2.9 A, di/dt = 100 A/ N-Ch 40 80 P-Ch 40 80 300 s, duty cycle 2%. A V nC N-Ch s nA S N Channel IF = -2.9 A, di/dt = 100 A/ V A VGS = 4.5 V, ID = 11.8A s Unit ns