KEXIN KTS3C3F30L

IC
IC
SMD Type
STripFET TM Power MOSFET
KTS3C3F30L
Features
Typical RDS(on) (N-Channel)=50m
Typical RDS(on) (N-Channel)=140m
Standard outline for easy
automated surface mount assembly
Low threshold drive
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Drain-Source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 k
)
Gate-to-Source Voltage
N-Channel
P-Channel
VDS
30
VDGR
30
V
16
VGS
V
Continuous Drain Current, at Tc = 25
ID
3.5
2.7
Continuous Drain Current, at Tc = 100
ID
2.2
1.7
Pulsed Drain Current
IDM
14
Total Dissipation at TC = 25
Single Operation
Total Dissipation at TC = 25
Dual Operation
Junction and Storage Temperature Range
PTOT
TJ, TSTG
Thermal Resistance Junction-ambient Max (Single Operating)
Rthj-amb *
(Dual Operating)
Maximum Lead Temperature For Soldering Purpose
Tl
Unit
A
11
1.6
2
W
-65 to 150
62.5
78
/W
300
2
* Mounted on 0.5 in pad of 2oz. copper.
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IC
IC
SMD Type
KTS3C3F30L
Electrical Characteristics Ta = 25
Parameter
Drain-source Breakdown Voltage
Zero Gate Voltage Drain Current (VGS = 0)
Gate-body Leakage Current (VDS = 0)
Gate Threshold Voltage
Static Drain-source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
IDSS
IGSS
VGS(th)
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
Qg
Gate-Source Charge
Qgs
Turn-off Delay Time
Fall Time
Source-drain Current
Source-drain Current (pulsed) *1
2
V(BR)DSS
Total Gate Charge
Gate-Drain Charge
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Testconditons
Symbol
Qgd
td(off)
tf
ISD
ISDM
Min
Typ
Max
Unit
ID = 250
A, VGS = 0
N-Ch
30
V
ID = 250
A, VGS = 0
P-Ch
30
V
N-Ch
1
A
VDS = Max Rating
P-Ch
1
A
VDS = Max Rating, TC = 125
N-Ch
10
A
P-Ch
10
A
VGS =
16V
N-Ch
10
P-Ch
10
A
A
VDS = VGS, ID = 250 A
N-Ch
1
V
VDS = VGS, ID = 250 A
P-Ch
1
V
VGS = 10V, ID = 1.75A
N-Ch
50
65
m
VGS = 10V, ID = 1.5A
P-Ch
140
165
m
VGS = 4.5V, ID = 1.75A
N-Ch
60
90
m
VGS = 4.5V, ID = 1.5A
P-Ch
160
200
m
VDS = 15 V ID= 1.75 A
N-Ch
5.5
VDS = 15 V ID= 1.5 A
P-Ch
4
S
N-Ch
320
pF
N-Channel
P-Ch
420
pF
VDS = 25V, f = 1 MHz, VGS = 0
N-Ch
90
pF
S
P-Channel
P-Ch
95
pF
VDS = 25V, f = 1 MHz, VGS = 0
N-Ch
40
pF
P-Ch
30
pF
N-Channel
N-Ch
27
ns
P-Ch
14.5
ns
N-Ch
40
ns
P-Ch
37
ns
VDD=15V,ID=1.75A,RG=4.7 , VGS =
4.5V
P-Channel
VDD=15V,ID=1.5A,RG=4.7 ,
VGS=4.5V
N-Channel
N-Ch
8.5
12
nC
P-Ch
4.8
7
nC
N-Ch
2
P-Channel
P-Ch
1.7
nC
VDD = 24V, ID= 3A,VGS = 4.5V
N-Ch
4
nC
P-Ch
2
nC
N-Channel
N-Ch
30
ns
VDD = 15V, ID = 1.75A,RG = 4.7 ,
VGS = 4.5V
P-Ch
90
ns
P-Channel
N-Ch
20
ns
VDD = 15V, ID = 1.5A,RG = 4.7 ,
VGS = 4.5V
P-Ch
23
ns
VDD =24V, ID=3.5A,VGS = 4.5V
nC
N-Ch
3.5
A
P-Ch
3
A
N-Ch
14
A
P-Ch
12
A
IC
IC
SMD Type
KTS3C3F30L
Electrical Characteristics Ta = 25
Parameter
Forward On Voltage *2
VSD
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr
Reverse Recovery Curren
*1 Pulsed: Pulse duration = 300
Testconditons
Symbol
IRRM
Min
Typ
Max
Unit
ISD = 3.5A, VGS = 0
N-Ch
1.2
V
ISD = 3A, VGS = 0
P-Ch
1.2
V
N-Channel
N-Ch
28
P-Ch
35
ns
N-Ch
18
nC
ISD = 3.5A, di/dt = 100A/
s,
VDD = 15V, Tj = 150
ns
P-Channel
P-Ch
25
nC
ISD = 3A, di/dt = 100A/
N-Ch
1.3
A
P-Ch
1.5
A
VDD = 15V, Tj = 150
s,
s, duty cycle 1.5 %.
*2 Pulse width limited by safe operating area
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