Light Emitting Diode(InGaAlP/InGaN) KLP-36M-X-X DIMENSIONS KLP-34M is a 3 in 1 full colour LED. 3 2 1 1 Features 4 • Transparent epoxy Encapsulent • High Optical Output 5 A 6 B 3 G R 2 1 4 5 6 Applications • Display • Indicator • Signage [ Ta=25°C ] Maximum Ratings Parameter Symbol R G IF B Forward Current Peak Forward Current IFP *１ PD Power Dissipation MIN - MAX 30 30 30 Unit mA mA mA R - 80 mA G - 100 mA B R G B -30 -40 100 75 105 105 85 105 260 mA mW mW mW °C °C °C TOP Ts Tsol Operating Temperature Storage Temperature Soldering Temperature*２ Conditions 5 Sec *1. IFP Measured under duty £ 1/10 @ 1KHz *2. Soldering time £ 5 Sec [ Ta=25°C ] Electro-Optical Characteristics Parameter Symbol Conditions IF = 20 mA/Die Peak emission wavelength VF Po Iv λP IF = 20 mA/Die RED 2 5.50 350 620 Doninant Wave Length Spectral half bandwidth Half angle λd ∆λ ∆Θ IF = 20 mA/Die IF = 20 mA/Die IF = 20 mA/Die 625 20 - Forward voltage Optical Output Power IF = 20 mA/Die 1/2 Typical Value GREEN 3.3 4.50 750 520 BLUE 3.2 8.5 200 468 525 30 160 470 25 - Unit V mW mcd nm nm nm deg. Light Emitting Diode(InGaAlP/InGaN) KLP-36M-X-X Radiant Intensity vs. Forward current 1.5 (IF) 50 40 Relative intensity Forward current IF(mA), Each Chip Forward current vs. Ambient temperature 30 20 10 0 0 20 40 60 1 0.5 (℃) 100 80 0 Ambient temperature Ta Relative radiant intensity vs. Ambient temperature 5 0 10 15 20 25 Forward current IF (IF) 35 Relative intensity vs. Wavelength Intensity [arb.] 1.2 Relative radiant intensity PO 30 10 1 B G R 1 0.8 0.6 0.4 0.2 0.1 0 400 450 500 550 600 650 700 -20 0 20 40 60 80 Wave Length[nm] 100 (℃) Ambient temperature Ta Forward current vs. Forward voltage Radiant Pattern Angle(deg) (㎃) 0 +4 G/B 0 -20 -4 0 +80 50 -80 -100 10 0 +100 5 0 +20 +60 25 20 15 R 0 -6 Forward current IF 30 0 100 (V) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Forward voltage VF 50 50 Relative intensity(%) 2/2 100