Light Emitting Diode(InGaAlP/InGaN) KLP-34RG-X-X DIMENSIONS KLP-34RG has a high bright InGaAlP red LED and a high bright InGaN green LED. Features • Transparent epoxy Encapsulent • High Optical Output Green (Zener Option) Applications • Display • Indicator • Signage [ Ta=25°C ] Maximum Ratings Parameter Reverse Voltage (w/o Zener) Symbol VR Ratings 5 Unit V Reverse current ( w Zener) IR 50 mA Forward current IF 30 mA IFP Pulse forward current Power dissipation *1 Operating temperature Storage temperature Soldering Temperature *2 0.1 A PD 180 mW Topr. -30 ~ +85 °C Tstg. -40 ~ +105 °C Tsol. 260 °C *1. IFP Measured under duty £ 1/10 @ 1KHz *2. Soldering time £ 5 Sec Electro-Optical Characteristics Parameter Forward voltage [ Ta=25°C ] Symbol VF Conditions IF = 20 mA Po IF = 20 mA Optical Output Power Iv Peak emission wavelength λP IF = 20 mA Doninant Wave Length λd IF = 20 mA Spectral half bandwidth ∆λ IF = 20 mA Half angle ∆Θ IF = 20 mA 1/2 R G R G R G R G R G R G Min 4.00 3.50 300 650 620 515 - Typ 2.0 3.3 5.50 5.00 350 750 630 520 20 30 120 Max 2.5 3.9 635 535 - Unit V mW mcd nm nm nm deg. Light Emitting Diode(InGaAlP/InGaN) KLP-34RG-X-X Radiant Intensity vs. Forward current 1.5 (IF) 50 40 Relative intensity Forward current IF(mA), Each Chip Forward current vs. Ambient temperature 30 20 1 0.5 10 0 0 20 40 60 80 Ambient temperature Ta 0 (℃) 100 5 0 10 15 20 25 30 (IF) 35 Forward current IF Relative intensity vs. Wavelength Relative radiant intensity vs. Ambient temperature GREEN 1 10 Intensity [arb.] Relative radiant intensity PO 1.2 1 0.1 RED 0.8 0.6 0.4 0.2 -20 0 20 40 60 80 100 (℃) 0 450 500 550 600 650 700 750 Ambient temperature Ta Wave Length[nm] Forward current Vs. Forward voltage Radiant Pattern Angle(deg) (㎃) RED GREEN 25 20 15 +20 + 60 + 40 -20 -4 0 50 0 -80 -100 + 80 10 0 -6 5 0 0 + 1 00 Forward current IF 30 0 (V) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 100 Forward voltage VF 50 50 Relative intensity(%) 2/2 100