Light Emitting Diode(InGaAlP/InGaN) KLP-56M DIMENSIONS KLP-56M is a 3 in 1 full colour LED. Features • Transparent epoxy Encapsulent • High Optical Output Applications Pin Connection 1. Cathode(Red) 2. Cathode(Green) 3. Cathode(Blue) 4. Anode(Red) 5. Anode(Green) 6. Anode(Blue) • Display • Indicator • Signage [ Ta=25°C ] Maximum Ratings Parameter Reverse Voltage Symbol VR Ratings Unit 5 V IF 30 mA IFP 0.1 A Forward current Pulse forward current Power dissipation *1 PD 90 mW Operating temperature Topr. -30 ~ +85 °C Storage temperature Tstg. -40 ~ +105 °C Tsol. 260 °C Soldering Temperature *2 *1. IFP Measured under duty ≤ 1/10 @ 1KHz *2. Soldering time ≤ 5 Sec [ Ta=25°C ] Electro-Optical Characteristics Parameter Symbol Conditions Forward voltage VF Optical Output Power Typical Value Unit RED GREEN BLUE IF = 20 mA/Die 2 3.3 3.2 V Iv IF = 20 mA/Die 300 750 200 mW Doninant Wave Length λd IF = 20 mA/Die 630 525 470 nm Spectral half bandwidth ∆λ IF = 20 mA/Die 20 30 25 nm Half angle ∆Θ IF = 20 mA/Die - 120 - deg. 1/2 Light Emitting Diode(InGaAlP/InGaN) KLP-56M Radiant Intensity vs. Forward current 1.5 (IF) 50 40 Relative intensity Forward current IF(mA), Each Chip Forward current vs. Ambient temperature 30 20 1 0.5 10 0 0 20 40 80 60 0 (℃) 100 5 0 10 Ambient temperature Ta 15 20 25 30 (IF) 35 Forward current IF Relative intensity vs. Wavelength Relative radiant intensity vs. Ambient temperature B 1 10 Intensity [arb.] Relative radiant intensity PO 1.2 1 0.1 R G 0.8 0.6 0.4 0.2 -20 0 20 40 60 80 100 (℃) 0 400 450 500 550 600 650 700 Ambient temperature Ta Wave Length[nm] Forward current vs. Forward voltage Radiant Pattern Angle(deg) (㎃) R G/B 25 20 15 0 + 60 +4 +20 -20 -4 0 50 0 -80 -100 + 80 10 0 -6 5 0 0 + 1 00 Forward current IF 30 0 (V) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 100 Forward voltage VF 50 50 Relative intensity(%) 2/2 100