APTM50TAM65FPG Triple phase leg MOSFET Power Module VBUS1 VBUS2 VBUS3 G1 G3 G5 S1 G2 S2 0/VBUS1 Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control S5 S3 U W V G4 G6 S4 S6 0/VBUS2 0/VBUS3 VDSS = 500V RDSon = 65mΩ typ @ Tj = 25°C ID = 51A @ Tc = 25°C Features • Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • High level of integration These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTM50TAM65FPG – Rev 1 July, 2006 Benefits • Outstanding performance at high frequency operation VBUS 1 VBUS 2 VBUS 3 • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance G1 G3 G5 • Solderable terminals both for power and signal for S3 S1 S5 0/VBUS 1 0/VBUS 2 0/VBUS 3 easy PCB mounting S4 S2 S6 • Very low (12mm) profile G4 G2 G6 • Each leg can be easily paralleled to achieve a phase leg of three times the current capability U V W • Module can be configured as a three phase bridge • Module can be configured as a boost followed by a full bridge • RoHS Compliant Absolute maximum ratings Symbol Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage 500 V Tc = 25°C 51 ID Continuous Drain Current A Tc = 80°C 38 IDM Pulsed Drain current 204 VGS Gate - Source Voltage ±30 V RDSon Drain - Source ON Resistance 78 mΩ PD Maximum Power Dissipation Tc = 25°C 390 W IAR Avalanche current (repetitive and non repetitive) 51 A EAR Repetitive Avalanche Energy 50 mJ EAS Single Pulse Avalanche Energy 3000 APTM50TAM65FPG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions VGS = 0V,VDS = 500V VGS = 0V,VDS = 400V Min VGS = 10V, ID = 25.5A VGS = VDS, ID = 2.5mA VGS = ±30 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz VSD dv/dt Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery X trr Reverse Recovery Time Qrr Reverse Recovery Charge 65 3 Min VGS = 10V VBus = 250V ID = 51A Typ 7000 1400 90 140 Unit Max Unit µA mΩ V nA pF nC 70 21 Inductive switching @ 125°C VGS = 15V VBus = 333V ID = 51A R G = 3Ω 38 93 1035 Inductive switching @ 125°C VGS = 15V, VBus = 333V ID = 51A, R G = 3Ω 1556 Test Conditions ns 75 Inductive switching @ 25°C VGS = 15V, VBus = 333V ID = 51A, R G = 3Ω µJ 845 µJ 1013 Min Typ Tj = 25°C Max 51 38 1.3 15 270 Tj = 125°C 540 Tc = 25°C Tc = 80°C VGS = 0V, IS = - 51A IS = - 51A VR = 333V diS/dt = 100A/µs Max 100 500 78 5 ±100 40 Source - Drain diode ratings and characteristics Symbol IS Typ Tj = 25°C Tj = 125°C Tj = 25°C 2.6 Tj = 125°C 9.6 Unit A V V/ns ns µC X dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 51A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C www.microsemi.com 2–6 APTM50TAM65FPG – Rev 1 July, 2006 Symbol APTM50TAM65FPG Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance Min IGBT RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M6 2500 -40 -40 -40 3 Typ Max 0.32 150 125 100 5 250 Unit °C/W V °C N.m g SP6-P Package outline (dimensions in mm) 5 places (3:1) www.microsemi.com 3–6 APTM50TAM65FPG – Rev 1 July, 2006 See application note 1902 - Mounting Instructions for SP6-P (12mm) Power Modules on www.microsemi.com APTM50TAM65FPG Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.35 0.3 0.9 0.25 0.7 0.2 0.5 0.15 0.3 0.1 0.1 0.05 0.05 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics ID, Drain Current (A) VGS=10&15V 160 7V 120 6.5V 80 6V 40 5.5V 0 0 5 10 15 20 VDS, Drain to Source Voltage (V) 100 75 TJ=25°C 50 25 TJ=125°C TJ=-55°C 0 0 25 2 4 6 8 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature RDS(on) vs Drain Current 1.1 V DS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 125 5V 60 Normalized to VGS =10V @ 25.5A 1.05 ID, DC Drain Current (A) VGS=10V 1 VGS=20V 0.95 50 40 30 20 10 0.9 0 0 10 20 30 40 50 ID, Drain Current (A) 60 www.microsemi.com 25 50 75 100 125 TC, Case Temperature (°C) 150 4–6 APTM50TAM65FPG – Rev 1 July, 2006 ID, Drain Current (A) 8V RDS(on) Drain to Source ON Resistance Transfert Characteristics 150 200 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 Threshold Voltage vs Temperature 25 50 75 100 125 150 Maximum Safe Operating Area 1000 1.2 1.1 I D, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 0 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) 1.0 0.9 0.8 0.7 100 us limited by RDSon 100 1 ms 10 10 ms Single pulse TJ =150°C TC=25°C 1 100 ms 0.1 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Ciss 10000 Coss 1000 Crss 100 10 0 10 20 30 40 VDS, Drain to Source Voltage (V) 1 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) VGS=10V ID= 25.5A 14 VDS=100V ID=51A TJ=25°C 12 VDS=250V 10 50 VDS=400V 8 6 4 2 0 0 25 50 75 100 125 150 175 Gate Charge (nC) www.microsemi.com 5–6 APTM50TAM65FPG – Rev 1 July, 2006 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTM50TAM65FPG APTM50TAM65FPG Rise and Fall times vs Current 160 70 140 td(off) V DS=333V RG =3Ω T J=125°C L=100µH 60 50 40 30 td(on) 100 80 tr 60 20 10 0 10 20 30 40 50 60 I D, Drain Current (A) 70 80 10 20 30 40 50 60 ID, Drain Current (A) 70 80 Switching Energy vs Gate Resistance Switching Energy vs Current 5 VDS=333V RG=3Ω TJ=125°C L=100µH 2.5 2 Switching Energy (mJ) 3 Eon 1.5 Eoff 1 0.5 V DS =333V ID=51A T J=125°C L=100µH 4 3 Eoff Eon 2 Eoff 1 0 0 20 30 40 50 60 70 0 80 5 10 15 20 25 30 35 40 45 I D, Drain Current (A) Gate Resistance (Ohms) Operating Frequency vs Drain Current 400 350 ZVS 300 250 I DR, Reverse Drain Current (A) 450 VDS=333V D=50% RG=3Ω TJ=125°C TC=75°C 200 ZCS 150 100 hard switching 50 0 10 15 20 25 30 35 I D, Drain Current (A) 40 Source to Drain Diode Forward Voltage 1000 100 T J=150°C TJ=25°C 10 1 45 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 VSD, Source to Drain Voltage (V) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6 APTM50TAM65FPG – Rev 1 July, 2006 10 Frequency (kHz) tf 40 20 Switching Energy (mJ) VDS=333V RG=3Ω T J=125°C L=100µH 120 t r and tf (ns) td(on) and t d(off) (ns) Delay Times vs Current 80