APTC60TAM35PG Triple phase leg Super Junction MOSFET Power Module VBUS1 VBUS2 VBUS3 G1 G3 G5 S5 V W G2 G4 G6 S2 S4 S6 0/VBUS2 0/VBUS3 0/VBUS1 Features • • • • - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections High level of integration Benefits • Outstanding performance at high frequency operation VBUS 1 VBUS 2 VBUS 3 • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance G1 G3 G5 • Solderable terminals both for power and signal for S3 S1 S5 0/VBUS 1 0/VBUS 2 0/VBUS 3 easy PCB mounting S2 S4 S6 • Very low (12mm) profile G2 G4 G6 • Each leg can be easily paralleled to achieve a phase leg of three times the current capability U V W • Module can be configured as a three phase bridge • Module can be configured as a boost followed by a full bridge • RoHS Compliant Absolute maximum ratings Symbol Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage 600 V Tc = 25°C 72 ID Continuous Drain Current A Tc = 80°C 54 IDM Pulsed Drain current 200 VGS Gate - Source Voltage ±20 V RDSon Drain - Source ON Resistance 35 mΩ PD Maximum Power Dissipation Tc = 25°C 416 W IAR Avalanche current (repetitive and non repetitive) 20 A EAR Repetitive Avalanche Energy 1 mJ EAS Single Pulse Avalanche Energy 1800 These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. www.microsemi.com 1-6 July, 2006 S3 U Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control APTC60TAM35P G– Rev 1 S1 VDSS = 600V RDSon = 35mΩ max @ Tj = 25°C ID = 72A @ Tc = 25°C APTC60TAM35PG All ratings @ Tj = 25°C unless otherwise specified IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions Min Tj = 25°C Tj = 125°C VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V VGS = 10V, ID = 72A VGS = VDS, ID = 5.4mA VGS = ±20 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz VSD dv/dt trr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery X Reverse Recovery Time Qrr Reverse Recovery Charge 2.1 3 Min Typ 14 5.13 0.42 518 VGS = 10V VBus = 300V ID = 72A Unit Max Unit µA mΩ V nA nF nC 222 21 Inductive Switching @ 125°C VGS = 15V VBus = 400V ID = 72A R G = 2.5Ω 30 Test Conditions 84 1340 µJ 1960 2192 µJ 2412 Min Tc = 25°C Tc = 80°C ns 283 Inductive switching @ 25°C VGS = 15V, VBus = 400V ID = 72A, R G = 2.5Ω Inductive switching @ 125°C VGS = 15V, VBus = 400V ID = 72A, R G = 2.5Ω Typ 72 54 VGS = 0V, IS = - 72A IS = - 72A VR = 350V diS/dt = 200A/µs Max 40 375 35 3.9 ±150 58 Source - Drain diode ratings and characteristics Symbol IS Typ Max Unit A 1.2 6 Tj = 25°C 580 V V/ns ns Tj = 25°C 46 µC July, 2006 Symbol X dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 72A di/dt ≤ 200A/µs VR ≤ VDSS Tj ≤ 150°C www.microsemi.com 2-6 APTC60TAM35P G– Rev 1 Electrical Characteristics APTC60TAM35PG Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 -40 -40 -40 3 Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M6 Typ Max 0.3 150 125 100 5 250 Unit °C/W V °C N.m g SP6-P Package outline (dimensions in mm) 5 places (3:1) www.microsemi.com 3-6 APTC60TAM35P G– Rev 1 July, 2006 See application note 1902 - Mounting Instructions for SP6-P (12mm) Power Modules on www.microsemi.com APTC60TAM35PG Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.35 0.3 0.9 0.25 0.7 0.2 0.5 0.15 0.3 0.1 0.1 0.05 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Transfert Characteristics V GS=15&10V 6.5V 6V 5.5V 5V 4.5V 4V VDS > ID(on)xRDS (on)MAX 250µs pulse test @ < 0.5 duty cycle 240 200 160 120 80 T J=125°C 40 TJ=25°C T J=-55°C 0 0 5 10 15 20 VDS, Drain to Source Voltage (V) 25 0 1.05 VGS=10V VGS =20V 1 7 DC Drain Current vs Case Temperature 80 RDS(on) vs Drain Current 1.1 Normalized to VGS=10V @ 36A 1 2 3 4 5 6 VGS, Gate to Source Voltage (V) 0.95 70 60 50 40 30 20 10 0.9 0 20 40 60 80 100 120 I D, Drain Current (A) www.microsemi.com 25 50 75 100 125 TC, Case Temperature (°C) 150 July, 2006 0 4-6 APTC60TAM35P G– Rev 1 RDS(on) Drain to Source ON Resistance I D, Drain Current (A) 280 I D, DC Drain Current (A) ID, Drain Current (A) Low Voltage Output Characteristics 400 360 320 280 240 200 160 120 80 40 0 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) Threshold Voltage vs Temperature Maximum Safe Operating Area 1000 1.1 I D, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 1.2 1.0 0.9 0.8 0.7 100 100 µs limited by RDSon 1 ms Single pulse TJ=150°C TC=25°C 10 0.6 10 ms 1 -50 -25 0 25 50 75 100 125 150 1 Ciss Coss 1000 Crss 100 10 1000 14 ID=72A TJ=25°C 12 10 V DS=120V VDS=300V 8 V DS =480V 6 4 2 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) 0 100 200 300 400 Gate Charge (nC) 500 600 July, 2006 0 100 Gate Charge vs Gate to Source Voltage VGS , Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 10000 10 VDS, Drain to Source Voltage (V) TC, Case Temperature (°C) C, Capacitance (pF) V GS=10V ID= 72A www.microsemi.com 5-6 APTC60TAM35P G– Rev 1 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTC60TAM35PG APTC60TAM35PG Delay Times vs Current 350 td(off) 300 250 VDS=400V RG=2.5Ω TJ=125°C L=100µH 200 150 100 50 80 40 40 60 80 100 tr 20 0 20 0 120 0 20 ID, Drain Current (A) Switching Energy (mJ) Eon 120 VDS=400V ID=72A T J=125°C L=100µH 8 6 Eoff Eon 4 2 0 40 60 80 100 ID, Drain Current (A) 120 ZVS 100 80 VDS=400V D=50% RG=2.5Ω TJ=125°C TC=75°C 5 10 15 20 25 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000 I DR, Reverse Drain Current (A) ZCS 0 hard switching T J=150°C 100 TJ=25°C 10 0 15 20 25 30 35 40 45 50 55 60 65 ID, Drain Current (A) 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V) “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6-6 July, 2006 20 120 Frequency (kHz) 100 APTC60TAM35P G– Rev 1 Switching Energy (mJ) Eoff Operating Frequency vs Drain Current 20 80 Switching Energy vs Gate Resistance 140 40 60 10 VDS=400V RG=2.5Ω TJ=125°C L=100µH 0 60 40 ID, Drain Current (A) Switching Energy vs Current 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 tf 60 td(on) 0 VDS=400V RG=2.5Ω T J=125°C L=100µH 100 tr and t f (ns) td(on) and td(off) (ns) Rise and Fall times vs Current 120