APTM20TDUM16PG Triple dual common source MOSFET Power Module D3 G3 G5 S3 S1 S5 S1/S2 S3/S4 S5/S6 S2 S4 S6 G2 G4 G6 D2 D4 D1 D6 D3 G1 S1/S2 D2 S1 D5 G3 S3/S4 S3 G5 S5/S6 S5 S2 S4 S6 G2 G4 G6 D4 D6 Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Very low (12mm) profile • Each leg can be easily paralleled to achieve a dual common source configuration of three times the current capability • RoHS Compliant Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 200 104 77 416 ±30 19 390 104 50 3000 Unit V A V mΩ W A July, 2006 G1 Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies D5 mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–8 APTM20TDUM16PG – Rev 1 D1 VDSS = 200V RDSon = 16mΩ typ @ Tj = 25°C ID = 104A @ Tc = 25°C APTM20TDUM16PG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions VGS = 0V,VDS = 200V VGS = 0V,VDS = 160V Min VGS = 10V, ID = 52A VGS = VDS, ID = 2.5mA VGS = ±30 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz VSD dv/dt trr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery X Reverse Recovery Time Qrr Reverse Recovery Charge IS 16 3 Min VGS = 10V VBus = 100V ID =104A Typ 7220 2330 146 140 Unit Max Unit µA mΩ V nA pF nC 67 32 Inductive switching @ 125°C VGS = 15V VBus = 133V ID = 104A R G = 5Ω 64 116 849 µJ 929 Inductive switching @ 125°C VGS = 15V, VBus = 133V ID = 104A, R G = 5Ω Test Conditions ns 88 Inductive switching @ 25°C VGS = 15V, VBus = 133V ID = 104A, R G = 5Ω 936 µJ 986 Min Typ Tc = 25°C Tc = 80°C VGS = 0V, IS = - 104A IS = - 104A VR = 133V diS/dt = 100A/µs Max 250 1000 19 5 ±100 53 Source - Drain diode ratings and characteristics Symbol Typ Tj = 25°C Tj = 125°C Max 104 77 1.3 5 Unit A Tj = 25°C 360 V V/ns ns Tj = 25°C 6.7 µC www.microsemi.com July, 2006 X dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 104A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C 2–8 APTM20TDUM16PG – Rev 1 Symbol APTM20TDUM16PG Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 -40 -40 -40 3 Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M6 Typ Max 0.32 150 125 100 5 250 Unit °C/W V °C N.m g SP6-P Package outline (dimensions in mm) 5 places (3:1) www.microsemi.com 3–8 APTM20TDUM16PG – Rev 1 July, 2006 See application note 1902 - Mounting Instructions for SP6-P (12mm) Power Modules on www.microsemi.com APTM20TDUM16PG Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.35 0.3 0.9 0.25 0.7 0.2 0.5 0.15 0.3 0.1 Single Pulse 0.1 0.05 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics V GS=15V 600 10V 500 9V 400 8.5V 300 8V 7.5V 200 7V 100 V DS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 250 200 150 100 TJ=25°C 50 T J=125°C 6.5V 0 0 4 8 12 16 20 24 28 0 VDS, Drain to Source Voltage (V) 1.2 Normalized to V GS=10V @ 52A 1.1 1 2 3 4 5 6 7 8 9 10 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 120 RDS(on) vs Drain Current ID, DC Drain Current (A) VGS=10V 1 VGS=20V 0.9 0.8 100 80 60 40 20 0 0 25 50 75 100 125 150 ID, Drain Current (A) 25 50 75 100 125 150 July, 2006 RDS(on) Drain to Source ON Resistance TJ=-55°C 0 TC, Case Temperature (°C) www.microsemi.com 4–8 APTM20TDUM16PG – Rev 1 ID, Drain Current (A) Transfert Characteristics 300 ID, Drain Current (A) 700 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) 1.1 1.0 0.9 0.8 0.7 VGS=10V ID= 52A 2.0 1.5 1.0 0.5 0.0 -50 -25 25 50 75 100 125 150 Maximum Safe Operating Area 0.6 limited by RDSon 100 100µs 1ms 10 Single pulse TJ=150°C TC=25°C 10ms 100ms 1 -50 -25 0 25 50 75 100 125 150 1 Capacitance vs Drain to Source Voltage 100000 Ciss 10000 Coss 1000 Crss 100 10 20 30 40 50 VDS, Drain to Source Voltage (V) 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 14 I D=104A V DS=40V 12 TJ =25°C VDS=100V 10 8 VDS=160V 6 4 2 0 0 20 40 60 80 100 120 140 160 Gate Charge (nC) July, 2006 0 VGS, Gate to Source Voltage (V) TC, Case Temperature (°C) C, Capacitance (pF) 0 TJ, Junction Temperature (°C) 1000 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) Threshold Voltage vs Temperature 1.2 ON resistance vs Temperature 2.5 www.microsemi.com 5–8 APTM20TDUM16PG – Rev 1 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTM20TDUM16PG APTM20TDUM16PG Delay Times vs Current Rise and Fall times vs Current 160 120 VDS=133V RG=5Ω T J=125°C L=100µH 60 40 120 tr and tf (ns) t d(on) and td(off) (ns) t d(off) 80 t d(on) 100 80 tr 60 20 0 0 0 25 50 75 100 125 150 175 I D, Drain Current (A) 0 25 50 75 100 125 150 175 ID, Drain Current (A) Switching Energy vs Gate Resistance Switching Energy vs Current 3 2 VDS=133V RG=5Ω T J=125°C L=100µH Switching Energy (mJ) 1.5 Eoff Eon 1 0.5 Eoff 0 VDS=133V ID=104A T J=125°C L=100µH 2.5 2 Eoff 1.5 Eon 1 0.5 0 25 50 75 100 125 150 175 0 I D, Drain Current (A) Operating Frequency vs Drain Current ZCS 150 VDS=133V D=50% RG=5Ω TJ=125°C TC=75°C 100 50 ZVS Hard switching 0 25 38 50 63 75 Source to Drain Diode Forward Voltage IDR, Reverse Drain Current (A) 250 200 5 10 15 20 25 30 35 40 45 50 Gate Resistance (Ohms) 300 Frequency (kHz) tf 40 20 Eon and Eoff (mJ) V DS=133V R G=5Ω T J=125°C L=100µH 140 100 88 100 I D, Drain Current (A) 1000 100 TJ =150°C TJ =25°C 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–8 APTM20TDUM16PG – Rev 1 July, 2006 VSD, Source to Drain Voltage (V) www.microsemi.com 7–8 APTM20TDUM16PG – Rev 1 July, 2006 APTM20TDUM16PG APTM20TDUM16PG Microsemi reserves the right to change, without notice, the specifications and information contained herein www.microsemi.com 8–8 APTM20TDUM16PG – Rev 1 July, 2006 Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.