MICROSEMI APTGT150DH60TG

APTGT150DH60TG
Asymmetrical - Bridge
Trench + Field Stop IGBT®
Power Module
VCES = 600V
IC = 150A @ Tc = 80°C
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
VBUS
VBUS SENSE
Q1
CR3
E1
O UT2
Q4
G4
CR2
E4
0/VBUS SENSE
NTC1
NT C2
0/VBUS
VBUS
SENSE
G4
E4
VBUS
0/VBUS
E1
0/VBUS
SENSE
G1
Benefits
• Stable temperature behavior
• Very rugged
• Solderable terminals for easy PCB mounting
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
• RoHS Compliant
OUT2
OUT1
NTC2
NTC1
Absolute maximum ratings
Symbol
VCES
Parameter
Collector - Emitter Breakdown Voltage
IC
Continuous Collector Current
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
RBSOA
Reverse Bias Safe Operating Area
TC = 25°C
Max ratings
600
225
150
350
±20
480
Tj = 150°C
300A @ 550V
TC = 25°C
TC = 80°C
TC = 25°C
Unit
V
A
June, 2006
OUT1
Features
• Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• Internal thermistor for temperature monitoring
• High level of integration
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1-5
APTGT150DH60TG – Rev 1
G1
APTGT150DH60TG
All ratings @ Tj = 25°C unless otherwise specified
ICES
Zero Gate Voltage Collector Current
VCE(sat)
Collector Emitter Saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Test Conditions
VGE = 0V, VCE = 600V
Tj = 25°C
VGE =15V
IC = 150A
Tj = 150°C
VGE = VCE , IC = 1.5 mA
VGE = 20V, VCE = 0V
Dynamic Characteristics
Symbol
Cies
Coes
Cres
Td(on)
Tr
Td(off)
Tf
Td(on)
Tr
Td(off)
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Eon
Turn on Energy
Eoff
Turn off Energy
VGE = ±15V
VBus = 300V
IC = 150A
R G = 3.3Ω
Reverse diode ratings and characteristics
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
IRM
Maximum Reverse Leakage Current
IF
DC Forward Current
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Min
VR=600V
IF = 150A
VGE = 0V
IF = 150A
VR = 300V
Reverse Recovery Energy
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1.5
1.7
5.8
Typ
9200
580
270
115
45
225
Max
Unit
250
1.9
µA
6.5
400
V
nA
Max
Unit
V
pF
ns
130
50
ns
300
70
0.85
1.5
4.1
5.3
Min
600
Tj = 25°C
Tj = 150°C
Tc = 80°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
Typ
55
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
Test Conditions
di/dt =3000A/µs
Er
5.0
Inductive Switching (25°C)
VGE = ±15V
VBus = 300V
IC = 150A
R G = 3.3Ω
Inductive Switching (150°C)
VGE = ±15V
VBus = 300V
IC = 150A
R G = 3.3Ω
Fall Time
Tf
Min
Typ
mJ
mJ
Max
250
500
150
1.6
1.5
130
225
6.9
14.5
1.6
3.5
Unit
V
µA
A
2
V
ns
June, 2006
Symbol Characteristic
µC
mJ
2-5
APTGT150DH60TG – Rev 1
Electrical Characteristics
APTGT150DH60TG
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
R25
Resistance @ 25°C
B 25/85 T25 = 298.15 K
RT =
R 25
Max
Unit
kΩ
K
Min
Typ
Max
0.31
0.52
Unit
T: Thermistor temperature
Symbol Characteristic
VISOL
TJ
TSTG
TC
Torque
Wt
Typ
50
3952

 1 1  RT : Thermistor value at T
exp B 25 / 85 
− 
 T25 T 

Thermal and package characteristics
RthJC
Min
IGBT
Diode
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To Heatsink
M5
2500
-40
-40
-40
2.5
°C/W
V
175
125
100
4.7
160
°C
N.m
g
June, 2006
SP4 Package outline (dimensions in mm)
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
www.microsemi.com
3-5
APTGT150DH60TG – Rev 1
ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :
APTGT150DH60TG
Typical Performance Curve
Output Characteristics (VGE=15V)
Output Characteristics
300
300
TJ=25°C
T J = 150°C
VG E=19V
250
250
VGE=13V
200
TJ =150°C
IC (A)
IC (A)
TJ=125°C
200
150
VGE=15V
150
100
100
50
50
VGE=9V
TJ=25°C
0
0
0.5
1
1.5
VCE (V)
0
2
2.5
0
3
10
T J=25°C
250
E (mJ)
IC (A)
150
TJ=125°C
2.5
3
3.5
Eoff
6
Er
4
Eon
TJ=150°C
50
2
TJ=25°C
0
5
6
7
8
9
0
10
11
0
12
50
100
Switching Energy Losses vs Gate Resistance
12
250
300
Reverse Bias Safe Operating Area
Eon
300
Eoff
Eoff
250
IF (A)
8
200
350
VCE = 300V
VG E =15V
I C = 150A
T J = 150°C
10
150
IC (A)
VGE (V)
E (mJ)
1.5
2
VCE (V)
VCE = 300V
VG E = 15V
R G = 3.3Ω
T J = 150°C
8
200
100
1
Energy losses vs Collector Current
Transfert Characteristics
300
0.5
6
4
150
100
Er
2
200
VGE=15V
TJ=150°C
RG =3.3Ω
50
Eon
0
0
0
5
10
15
20
Gate Resistance (ohms)
25
0
100
200
300 400
VCE (V)
500
600
700
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.3
0.9
0.25
0.7
0.15
0.1
0.05
0.5
June, 2006
0.2
IGBT
0.3
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
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4-5
APTGT150DH60TG – Rev 1
Thermal Impedance (°C/W)
0.35
APTGT150DH60TG
Forward Characteristic of diode
300
100
ZCS
80
ZVS
VCE=300V
D=50%
RG=3.3Ω
250
T J=150°C
200
T c=85°C
IC (A)
Fmax, Operating Frequency (kHz)
Operating Frequency vs Collector Current
120
60
150
T J=125°C
100
40
Hard
switching
20
T J=150°C
50
T J=25°C
0
0
0
50
100
IC (A)
150
0
200
0.4
0.8
1.2
1.6
V F (V)
2
2.4
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.6
0.5
0.9
0.4
0.7
0.3
0.5
0.2
0.3
0.1
0.1
0.05
0
0.00001
Diode
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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5-5
APTGT150DH60TG – Rev 1
June, 2006
Rectangular Pulse Duration in Seconds