APTM50AM38SCTG Phase leg Series & SiC parallel diodes MOSFET Power Module VDSS = 500V RDSon = 38mΩ typ @ Tj = 25°C ID = 90A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies NTC2 VBUS Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated Q1 G1 OUT S1 • Q2 G2 0/VBU S • • S2 NTC1 • • Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant OUT S1 S2 NTC2 G1 G2 NTC1 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 500 90 67 360 ±30 45 694 46 50 2500 Unit V A V mΩ W A July, 2006 VBUS mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–8 APTM50AM38SCTG – Rev 2 OUT 0/ VBUS Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration APTM50AM38SCTG All ratings @ Tj = 25°C unless otherwise specified RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions VGS = 0V,VDS = 500V Tj = 25°C VGS = 0V,VDS = 400V T j = 125°C VGS = 10V, ID = 45A VGS = VDS, ID = 5mA VGS = ±30 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz IRM Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge 38 Min Max Unit µA mΩ V nA nF nC 18 35 Test Conditions 77 906 1490 µJ 1692 Typ Max 500 750 Tj = 125°C 90 1.1 1.4 0.9 Tj = 25°C 24 Tj = 125°C 48 Tj = 25°C 99 Tj = 125°C 450 www.microsemi.com µJ 1452 Min 200 Tj = 25°C Tj = 125°C Tc = 85°C ns 87 Inductive switching @ 125°C VGS = 15V, VBus = 333V ID = 90A, R G = 2Ω IF = 90A VR = 133V di/dt = 600A/µs Unit 130 Inductive switching @ 25°C VGS = 15V, VBus = 333V ID = 90A, R G = 2Ω IF = 90A IF = 180A IF = 90A Typ 11.2 2.36 0.18 246 Max 200 1000 45 5 ±150 66 Inductive switching @ 125°C VGS = 15V VBus = 333V ID = 90A R G = 2Ω VR=200V Typ 3 VGS = 10V VBus = 250V ID = 90A Series diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage Min Unit V µA A 1.15 V July, 2006 IDSS Characteristic ns nC 2–8 APTM50AM38SCTG – Rev 2 Electrical Characteristics Symbol APTM50AM38SCTG Parallel diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current VR=600V Min 600 Tj = 25°C Tj = 175°C Tc = 125°C Tj = 25°C Tj = 175°C Typ Max 250 500 50 1.6 2.0 1000 5000 IF DC Forward Current VF Diode Forward Voltage IF = 50A QC Total Capacitive Charge IF = 50A, VR = 300V di/dt =1400A/µs 70 Q Total Capacitance f = 1MHz, VR = 200V 325 f = 1MHz, VR = 400V 250 Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Junction to Case Thermal Resistance Parallel diode RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Typ Transistor Series diode To heatsink M5 2500 -40 -40 -40 2.5 R 25 1.8 2.4 V nC pF Max 0.18 0.45 0.5 Unit °C/W V Typ 50 3952 Max °C N.m g Unit kΩ K T: Thermistor temperature 1 1 RT : Thermistor value at T exp B 25 / 85 − T25 T July, 2006 RT = Min µA A 150 125 100 4.7 160 Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K Unit V www.microsemi.com 3–8 APTM50AM38SCTG – Rev 2 IRM Test Conditions APTM50AM38SCTG SP4 Package outline (dimensions in mm) ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS : www.microsemi.com 4–8 APTM50AM38SCTG – Rev 2 July, 2006 See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com APTM50AM38SCTG Typical MOSFET Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.16 0.7 0.12 0.5 0.08 0.3 0.04 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 300 8V VGS=10&15V 250 I D, Drain Current (A) 7.5V 200 7V 150 6.5V 100 6V 50 VDS > ID(on)xR DS(on)MAX 250µs pulse test @ < 0.5 duty cycle 200 150 100 TJ=25°C 50 T J=125°C 5.5V 0 0 0 5 10 15 20 VDS, Drain to Source Voltage (V) 25 0 RDS(on) vs Drain Current Normalized to VGS=10V @ 45A 1.15 VGS=10V 1.10 1.05 1 2 3 4 5 6 7 VGS, Gate to Source Voltage (V) 8 DC Drain Current vs Case Temperature 100 I D, DC Drain Current (A) 1.20 TJ=-55°C V GS=20V 1.00 0.95 0.90 0.85 0.80 80 60 40 20 0 0 50 100 150 200 ID, Drain Current (A) www.microsemi.com 25 50 75 100 125 TC, Case Temperature (°C) 150 July, 2006 I D, Drain Current (A) 10 250 350 RDS(on) Drain to Source ON Resistance 1 5–8 APTM50AM38SCTG – Rev 2 Thermal Impedance (°C/W) 0.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 VGS =10V ID=45A 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) Threshold Voltage vs Temperature Maximum Safe Operating Area 1000 1.1 ID, Drain Current (A) VGS (TH), Threshold Voltage (Normalized) 1.2 1.0 0.9 0.8 0.7 0.6 100 limited by RDSon Single pulse TJ =150°C TC=25°C 10 1ms 10ms 1 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) 1 Capacitance vs Drain to Source Voltage VGS , Gate to Source Voltage (V) 100000 Ciss 10000 Coss 1000 Crss 100 10 0 10 20 30 40 VDS, Drain to Source Voltage (V) 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 14 V DS =100V I D=90A 12 T =25°C J V =250V DS 10 VDS=400V 8 6 4 2 0 50 0 40 80 120 160 200 240 280 320 Gate Charge (nC) July, 2006 C, Capacitance (pF) 100µs limited by R DSon www.microsemi.com 6–8 APTM50AM38SCTG – Rev 2 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTM50AM38SCTG APTM50AM38SCTG Delay Times vs Current Rise and Fall times vs Current 120 td(off) 80 40 V DS =333V RG =2Ω T J=125°C L=100µH td(on) 20 60 40 tr 20 0 0 20 40 60 80 100 120 ID, Drain Current (A) 140 20 VDS=333V RG=2Ω T J=125°C L=100µH 3 Eoff 2 Eon 1 Eoff 40 60 80 100 120 6 5 IDR, Reverse Drain Current (A) 2 Eon 1 200 Hard switching 50 0 30 40 50 60 5 10 15 20 25 70 1000 100 10 Source to Drain Diode Forward Voltage T J=150°C T J=25°C 1 80 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) ID, Drain Current (A) July, 2006 Frequency (kHz) ZVS 250 20 Eoff Gate Resistance (Ohms) V DS=333V D=50% R G=2Ω T J=125°C T C=75°C 350 100 140 3 0 Operating Frequency vs Drain Current 150 120 4 140 400 ZCS 100 VDS=333V ID=90A TJ=125°C L=100µH 7 I D, Drain Current (A) 300 80 0 0 20 60 Switching Energy vs Gate Resistance 8 Switching Energy (mJ) 4 40 I D, Drain Current (A) Switching Energy vs Current Switching Energy (mJ) 80 tf www.microsemi.com 7–8 APTM50AM38SCTG – Rev 2 60 VDS=333V RG=2Ω T J=125°C L=100µH 100 tr and t f (ns) t d(on) and td(off) (ns) 100 APTM50AM38SCTG Typical SiC Diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.6 0.5 0.9 0.4 0.7 0.3 0.5 0.2 0.3 0.1 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) 1000 TJ=25°C 75 TJ =75°C IR Reverse Current (µA) I F Forward Current (A) Reverse Characteristics Forward Characteristics 100 TJ=175°C 50 TJ =125°C 25 600 0.5 1 1.5 2 2.5 3 TJ =125°C TJ =75°C 400 TJ=25°C 200 0 0 TJ =175°C 800 3.5 VF Forward Voltage (V) 0 200 300 400 500 600 700 VR Reverse Voltage (V) 800 Capacitance vs.Reverse Voltage C, Capacitance (pF) 2000 1500 1000 500 0 1000 July, 2006 10 100 VR Reverse Voltage Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 8–8 APTM50AM38SCTG – Rev 2 1