APTGV50H120BTPG Trench & Field Stop IGBT Q1, Q3: VCES = 1200V ; IC = 50A @ Tc = 80°C Boost chopper + full bridge NPT & Trench + Field Stop IGBT Power module Q1 Q3 G1 CR5 CR1 OUT2 OUT1 Q4 Q2 E5 G2 CR2 E2 G4 NTC1 CR4 E4 0/VBUS1 E NTC2 Full bridge top switches : Trench + Field Stop IGBT Full bridge bottom switches : FAST NPT IGBT Q5 boost chopper : FAST NPT IGBT VBUS 1 NTC1 NTC2 G5 E5 VBUS 2 G1 0/VBUS 1 E1 0/VBUS 2 E3 E2 E4 G2 G4 OUT2 • Q1, Q3 (Trench & Field Stop IGBT) - Low voltage drop - Switching frequency up to 20 kHz - RBSOA & SCSOA rated - Low tail current • • • • Kelvin emitter for easy drive Very low stray inductance High level of integration Internal thermistor for temperature monitoring • • • • Optimized conduction & switching losses Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting • Low profile • Easy paralleling due to positive TC of VCEsat • RoHS Compliant These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1 - 13 APTGV50H120BTPG – Rev 0 September, 2007 OUT 1 • Q2, Q4, Q5 (FAST Non Punch Through (NPT) IGBT) - Switching frequency up to 100 kHz - RBSOA & SCSOA rated - Low tail current Benefits G3 C E Features 0/VBUS2 NTC K Application • Solar converter E3 C Q5 CR5B CR3 G3 E1 G5 Fast NPT IGBT Q5: VCES = 1200V ; IC = 100A @ Tc = 80°C VBUS2 VBUS1 K Fast NPT IGBT Q2, Q4: VCES = 1200V ; IC = 50A @ Tc = 80°C APTGV50H120BTPG All ratings @ Tj = 25°C unless otherwise specified 1. Full bridge top switches 1.1 Top Trench + Field Stop IGBT characteristics Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage TC = 25°C TC = 80°C TC = 25°C Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TJ = 125°C Max ratings 1200 75 50 100 ±20 270 100A @ 1150V Unit V A V W Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions Min Tj = 25°C VGE = 0V VCE = 1200V Tj = 125°C Tj = 25°C VGE =15V IC = 50A Tj = 125°C VGE = VCE , IC = 2mA VGE = 20V, VCE = 0V 1.4 5.0 Typ 1.7 2.0 5.8 Max 250 500 2.1 Unit µA V 6.5 400 V nA Max Unit Dynamic Characteristics Td(on) Tr Td(off) Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy RthJC Junction to Case Thermal resistance Test Conditions VGE = 0V,VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 50A RG = 18Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 50A RG = 18Ω VGE = ±15V VBus = 600V IC = 50A RG = 18Ω Min Typ 3600 160 90 30 420 pF ns 70 90 50 520 ns 90 Tj = 125°C 5 Tj = 125°C 5.5 mJ 0.45 www.microsemi.com °C/W 2 - 13 September, 2007 Tf Characteristic Input Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time APTGV50H120BTPG – Rev 0 Symbol Cies Crss Td(on) Tr Td(off) APTGV50H120BTPG 1.2 Top fast diode characteristics Symbol Characteristic VRRM IRM IF VF Test Conditions Maximum Reverse Leakage Current VR=1200V DC Forward Current trr Reverse Recovery Time Qrr Reverse Recovery Charge Max 100 500 Tc = 80°C IF = 60A VR = 800V di/dt =200A/µs Unit V Tj = 25°C Tj = 125°C 60 2.5 3 IF = 60A IF = 120A Diode Forward Voltage Typ 1200 IF = 60A RthJC Min Maximum Peak Repetitive Reverse Voltage Tj = 125°C 1.8 Tj = 25°C 265 Tj = 125°C Tj = 25°C 350 560 Tj = 125°C 2890 Junction to Case Thermal resistance µA A 3 V ns nC 0.9 °C/W 2. Full bridge bottom switches 2.1 Bottom Fast NPT IGBT characteristics Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Tc = 25°C Tc = 80°C Tc = 25°C Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area Tc = 25°C Tj = 150°C Max ratings 1200 70 50 150 ±20 312 100A @ 1200V Unit V A V W Electrical Characteristics Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current www.microsemi.com Min Typ 3.2 4.0 4.5 Max 250 500 3.7 Unit 6.5 100 V nA µA V September, 2007 ICES Test Conditions Tj = 25°C VGE = 0V VCE = 1200V Tj = 125°C Tj = 25°C VGE =15V IC = 50A Tj = 125°C VGE = VCE, IC = 1 mA VGE = 20 V, VCE = 0V 3 - 13 APTGV50H120BTPG – Rev 0 Symbol Characteristic APTGV50H120BTPG Dynamic Characteristics Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Emitter Charge Gate – Collector Charge Turn-on Delay Time Test Conditions VGE = 0V VCE = 25V f = 1MHz VGS = 15V VBus = 600V IC = 50A Inductive Switching (25°C) VGE = 15V VBus = 600V IC = 50A RG = 5 Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 50A RG = 5 Ω VGE = ±15V Tj = 125°C VBus = 600V IC = 50A Tj = 125°C RG = 5 Ω Rise Time Td(off) Turn-off Delay Time Tf Td(on) Tr Fall Time Turn-on Delay Time Rise Time Td(off) Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy RthJC Junction to Case Thermal resistance Min Typ 3450 330 220 330 35 200 35 Max Unit pF nC 65 ns 320 30 35 65 ns 360 40 6.9 mJ 3.05 0.4 °C/W Max Unit 2.2 Bottom diode characteristics IRM IF VF Maximum Reverse Leakage Current Min Diode Forward Voltage Reverse Recovery Time Qrr Reverse Recovery Charge Typ 1200 VR=1200V DC Forward Current trr RthJC Test Conditions Maximum Peak Repetitive Reverse Voltage Tj = 25°C Tj = 125°C Tc = 80°C IF = 30A IF = 60A IF = 30A IF = 30A VR = 800V di/dt =200A/µs Junction to Case Thermal resistance V 250 500 Tj = 125°C 30 2 2.3 1.8 Tj = 25°C 370 Tj = 125°C Tj = 25°C 500 660 Tj = 125°C 3450 A 2.5 V ns nC 1.2 www.microsemi.com µA °C/W 4 - 13 September, 2007 VRRM APTGV50H120BTPG – Rev 0 Symbol Characteristic APTGV50H120BTPG 3. Boost chopper switches 3.1 Fast NPT IGBT characteristics Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Tc = 25°C Tc = 80°C Tc = 25°C Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area Tc = 25°C Tj = 150°C Max ratings 1200 130 100 200 ±20 650 200A @ 1150V Unit V A V W Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V Tj = 25°C VCE = 1200V Tj = 125°C Tj = 25°C VGE =15V IC = 100A Tj = 125°C VGE = VCE, IC = 4 mA VGE = 20 V, VCE = 0V Min Test Conditions VGE = 0V ; VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = 15V VBus = 600V IC = 100A RG = 5.6 Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 100A RG = 5.6 Ω VGE = ±15V Tj = 125°C VBus = 600V IC = 100A Tj = 125°C RG = 5.6 Ω Min Typ 3.2 3.9 4.5 Max 250 500 3.7 Unit 6.5 400 V nA Max Unit µA V Dynamic Characteristics Rise Time Td(off) Turn-off Delay Time Tf Td(on) Tr Fall Time Turn-on Delay Time Rise Time Td(off) Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy RthJC Junction to Case Thermal resistance Typ 6.8 0.42 120 nF 50 ns 310 31 130 60 ns 360 36 12 mJ 5 0.19 www.microsemi.com °C/W 5 - 13 September, 2007 Tr Characteristic Input Capacitance Reverse Transfer Capacitance Turn-on Delay Time APTGV50H120BTPG – Rev 0 Symbol Cies Cres Td(on) APTGV50H120BTPG 3.2 Chopper diode characteristics Symbol Characteristic VRRM IRM IF VF Test Conditions Maximum Reverse Leakage Current VR=1200V DC Forward Current Reverse Recovery Time Qrr Reverse Recovery Charge Max IF = 60A IF = 120A IF = 60A IF = 60A VR = 800V di/dt =200A/µs Unit V Tj = 25°C Tj = 125°C 100 500 Tc = 80°C Diode Forward Voltage Typ 1200 Maximum Peak Repetitive Reverse Voltage trr RthJC Min Tj = 125°C 60 2.5 3 1.8 Tj = 25°C 265 Tj = 125°C Tj = 25°C 350 560 Tj = 125°C 2890 Junction to Case Thermal resistance µA A 3 V ns nC 0.9 °C/W Max Unit kΩ K 4. Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K Typ 50 3952 September, 2007 R25 1 1 T: Thermistor temperature exp B25 / 85 − RT: Thermistor value at T T25 T www.microsemi.com 6 - 13 APTGV50H120BTPG – Rev 0 RT = Min APTGV50H120BTPG 5. Package characteristics Symbol Characteristic VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz TJ Operating junction temperature range TSTG Storage Temperature Range TC Operating Case Temperature Torque Mounting torque To heatsink M6 Wt Package Weight * Tj=175°C for Trench & Field Stop IGBT Min 2500 -40 -40 -40 2.5 Typ Max Unit V 150* 125 100 4.7 250 °C N.m g 6. SP6-P Package outline (dimensions in mm) 9 places (3:1) ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS : See application note 1902 - Mounting Instructions for SP6-P (12mm) Power Modules on www.microsemi.com 7. Full bridge top switches curves 7.1 Top Trench + Field Stop IGBT typical performance curves Output Characteristics (VGE=15V) Output Characteristics 100 80 VGE=17V VGE=13V IC (A) IC (A) TJ=125°C 60 VGE=15V 60 40 40 20 20 September, 2007 TJ = 125°C TJ=25°C 80 VGE=9V 0 0 0 0.5 1 1.5 2 VCE (V) 2.5 3 3.5 www.microsemi.com 0 1 2 VCE (V) 3 4 7 - 13 APTGV50H120BTPG – Rev 0 100 APTGV50H120BTPG Energy losses vs Collector Current Transfert Characteristics 100 12 TJ=25°C 80 10 TJ=125°C 8 E (mJ) 60 IC (A) VCE = 600V VGE = 15V RG = 18Ω TJ = 125°C 40 6 Eon Eoff 4 TJ=125°C 20 2 0 0 5 6 7 8 9 10 11 0 12 20 Switching Energy Losses vs Gate Resistance 12 8 60 80 100 Reverse Bias Safe Operating Area 120 VCE = 600V VGE =15V IC = 50A TJ = 125°C 10 40 IC (A) VGE (V) E (mJ) Eon Eon 100 80 IC (A) Eoff 6 60 4 40 2 20 0 VGE=15V TJ=125°C RG=18Ω 0 0 10 20 30 40 50 60 Gate Resistance (ohms) 70 80 0 300 600 900 VCE (V) 1200 1500 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.5 0.9 0.4 0.7 0.3 0.5 0.2 0.3 0.1 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) 7.2 Top Fast diode typical performance curves Forw ard Current vs Forw ard Voltage IF, Forward Current (A) 160 140 120 T J=125°C 100 80 60 40 T J=25°C 20 0 0.0 1.0 2.0 3.0 4.0 Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 1 0.8 0.9 0.7 0.6 0.4 0.2 0 0.00001 0.5 0.3 0.1 0.05 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) www.microsemi.com 8 - 13 APTGV50H120BTPG – Rev 0 September, 2007 V F, Anode to Cathode Voltage (V) APTGV50H120BTPG 8. Full bridge bottom switches curves 8.1 Bottom fast NPT IGBT typical performance curves Output characteristics (VGE=15V) 250µs Pulse Test < 0.5% Duty cycle 160 TJ=25°C 120 TJ=125°C 80 40 2 4 6 VCE, Collector to Emitter Voltage (V) TJ=25°C 30 20 TJ=125°C 10 0 8 1 2 3 VCE, Collector to Emitter Voltage (V) VGE, Gate to Emitter Voltage (V) TJ=25°C 200 150 100 TJ=125°C 50 TJ=25°C 0 0 4 8 12 VGE, Gate to Emitter Voltage (V) 7 Ic=100A 5 Ic=50A 3 2 Ic=25A 1 0 9 VCE=600V 12 10 VCE=960V 8 6 4 2 0 50 100 150 200 250 300 350 Gate Charge (nC) 6 4 14 0 VCE, Collector to Emitter Voltage (V) TJ = 25°C 250µs Pulse Test < 0.5% Duty cycle 8 VCE=240V IC = 50A TJ = 25°C 16 16 On state Voltage vs Gate to Emitter Volt. 9 18 10 11 12 13 14 15 VGE, Gate to Emitter Voltage (V) 6 Breakdown Voltage vs Junction Temp. 3 Ic=25A 2 Ic, DC Collector Current (A) 1.00 0.95 0.90 0.85 250µs Pulse Test < 0.5% Duty cycle VGE = 15V 1 0 70 1.05 Ic=50A 4 25 1.20 1.10 Ic=100A 5 16 1.15 On state Voltage vs Junction Temperature 0.80 50 75 100 TJ, Junction Temperature (°C) 125 DC Collector Current vs Case Temperature 60 September, 2007 250µs Pulse Test < 0.5% Duty cycle 250 4 Gate Charge Transfer Characteristics 300 Ic, Collector Current (A) 40 50 40 30 20 10 0 25 50 75 100 125 TJ, Junction Temperature (°C) www.microsemi.com 25 50 75 100 125 TC, Case Temperature (°C) 150 9 - 13 APTGV50H120BTPG – Rev 0 0 VCE, Collector to Emitter Voltage (V) 250µs Pulse Test < 0.5% Duty cycle 0 0 Collector to Emitter Breakdown Voltage (Normalized) Output Characteristics (VGE=10V) 50 Ic, Collector Current (A) Ic, Collector Current (A) 200 APTGV50H120BTPG Turn-Off Delay Time vs Collector Current td(off), Turn-Off Delay Time (ns) td(on), Turn-On Delay Time (ns) Turn-On Delay Time vs Collector Current 45 VCE = 600V RG = 5Ω 40 VGE = 15V 35 30 25 0 25 50 75 100 400 VGE=15V, TJ=125°C 350 300 VGE=15V, TJ=25°C 250 VCE = 600V RG = 5Ω 200 125 0 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current 50 75 100 125 Current Fall Time vs Collector Current 50 180 VCE = 600V RG = 5Ω 140 tf, Fall Time (ns) tr, Rise Time (ns) 25 ICE, Collector to Emitter Current (A) 100 VGE=15V 60 TJ = 125°C 40 30 TJ = 25°C VCE = 600V, VGE = 15V, RG = 5Ω 20 20 125 TJ=125°C, VGE=15V 20 16 12 TJ=25°C, VGE=15V 8 4 0 25 50 75 100 ICE, Collector to Emitter Current (A) Eoff, 50A 8 6 Eon, 25A 4 2 TJ = 125°C 4 TJ = 25°C 2 0 0 IC, Collector Current (A) Eon, 50A 6 25 50 75 100 ICE, Collector to Emitter Current (A) 125 Reverse Bias Safe Operating Area 12 10 VCE = 600V VGE = 15V RG = 5Ω 120 VCE = 600V VGE = 15V TJ= 125°C 14 8 125 Switching Energy Losses vs Gate Resistance 18 16 125 100 80 September, 2007 VCE = 600V RG = 5Ω 24 25 50 75 100 ICE, Collector to Emitter Current (A) Turn-Off Energy Loss vs Collector Current Turn-On Energy Loss vs Collector Current 28 0 Switching Energy Losses (mJ) 0 60 40 20 Eoff, 25A 0 0 0 10 20 30 40 Gate Resistance (Ohms) 50 www.microsemi.com 0 400 800 1200 VCE, Collector to Emitter Voltage (V) 10 - 13 APTGV50H120BTPG – Rev 0 25 50 75 100 ICE, Collector to Emitter Current (A) Eoff, Turn-off Energy Loss (mJ) Eon, Turn-On Energy Loss (mJ) 0 APTGV50H120BTPG Cies 1000 Coes Cres 100 0 10 20 30 40 VCE, Collector to Emitter Voltage (V) Operating Frequency vs Collector Current 120 VCE = 600V D = 50% RG = 5Ω TJ = 125°C TC= 75°C 100 80 ZVS 60 ZCS 40 20 Hard switching 0 50 10 20 30 40 50 IC, Collector Current (A) 60 Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.45 Thermal Impedance (°C/W) Fmax, Operating Frequency (kHz) C, Capacitance (pF) Capacitance vs Collector to Emitter Voltage 10000 0.4 0.9 0.35 0.7 0.3 0.25 0.5 0.2 0.3 0.15 0.1 0.1 0.05 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) 8.2 Bottom diode typical performance curves Forw ard Current vs Forw ard Voltage IF, Forward Current (A) 80 60 T J=125°C 40 T J=25°C 20 0 0.0 1.0 2.0 3.0 4.0 V F, Anode to Cathode Voltage (V) Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration 1 0.8 0.9 September, 2007 1.2 0.7 0.5 0.6 0.4 0.2 0 0.00001 0.3 0.1 0.05 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) www.microsemi.com 11 - 13 APTGV50H120BTPG – Rev 0 Thermal Impedance (°C/W) 1.4 APTGV50H120BTPG 9. Boost chopper switches curves 9.1 Fast NPT IGBT typical performance curves Output Characteristics (VGE=15V) 200 175 175 TJ=25°C 150 125 100 VGE=20V VGE=12V 100 75 75 50 50 TJ=125°C VGE=9V 25 0 0 0 1 2 3 VCE (V) 4 5 6 0 35 175 2 3 4 VCE (V) VCE = 600V VGE = 15V RG = 5.6 Ω TJ = 125°C 30 150 25 E (mJ) 125 TJ=125°C 100 1 5 6 Energy losses vs Collector Current Transfert Characteristics 200 75 Eon 20 15 10 50 TJ=25°C Eoff 5 25 0 0 5 6 7 8 9 10 11 0 12 25 50 75 100 125 150 175 200 IC (A) VGE (V) Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 40 250 VCE = 600V VGE =15V IC = 100A TJ = 125°C 30 25 200 Eon IC (A) 35 E (mJ) VGE=15V 125 25 IC (A) TJ = 125°C 150 IC (A) IC (A) Output Characteristics 200 20 150 100 15 VGE=15V TJ=125°C RG=5.6 Ω Eoff 10 50 5 0 0 0 10 20 30 40 Gate Resistance (ohms) 0 50 300 600 900 1200 1500 VCE (V) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.12 0.08 0.04 IGBT September, 2007 0.16 0.7 0.5 0.3 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 12 - 13 APTGV50H120BTPG – Rev 0 Thermal Impedance (°C/W) 0.2 APTGV50H120BTPG 9.2 Chopper diode typical performance curves Forw ard Current vs Forw ard Voltage IF, Forward Current (A) 160 140 120 T J=125°C 100 80 60 40 T J=25°C 20 0 0.0 1.0 2.0 3.0 4.0 V F, Anode to Cathode Voltage (V) Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 1 0.8 0.9 0.7 0.6 0.4 0.2 0 0.00001 0.5 0.3 0.1 0.05 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 13 - 13 APTGV50H120BTPG – Rev 0 September, 2007 Rectangular Pulse Duration (Seconds)