MICROSEMI APTC80TA15PG

APTC80TA15PG
Triple phase leg
Super Junction MOSFET
Power Module
VBUS3
G1
G3
G5
S1
S3
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
S5
U
V
W
G2
G4
G6
S2
S4
S6
0/VBUS2
0/VBUS3
0/VBUS1
Features
•
•
•
•
VBUS 1
VBUS 2
G1
0/VBUS 1
U
S1
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Very low (12mm) profile
• Each leg can be easily paralleled to achieve a phase
leg of three times the current capability
• Module can be configured as a three phase bridge
• Module can be configured as a boost followed by a
full bridge
• RoHS Compliant
VBUS 3
G3
0/VBUS 2
S3
G5
0/VBUS 3
S5
S2
S4
S6
G2
G4
G6
V
W
Absolute maximum ratings
Symbol
VDSS
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
- Ultra low RDSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
- Very rugged
Kelvin source for easy drive
Very low stray inductance
- Symmetrical design
- Lead frames for power connections
High level of integration
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
800
28
21
110
±30
150
277
17
0.5
670
Unit
V
A
V
mΩ
W
A
July, 2006
VBUS2
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
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1–6
APTC80TA15PG – Rev 1
VBUS1
VDSS = 800V
RDSon = 150mΩ max @ Tj = 25°C
ID = 28A @ Tc = 25°C
APTC80TA15PG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
IDSS
RDS(on)
VGS(th)
IGSS
Characteristic
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Qg
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Tr
Td(off)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Test Conditions
VGS = 0V,VDS = 800V
VGS = 0V,VDS = 800V
Min
VGS = 10V, ID = 14A
VGS = VDS, ID = 2mA
VGS = ±20 V, VDS = 0V
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
VSD
dv/dt
trr
Characteristic
Continuous Source current
(Body diode)
Diode Forward Voltage
Peak Diode Recovery X
Reverse Recovery Time
Qrr
Reverse Recovery Charge
2.1
3
Min
Typ
4507
2092
108
180
VGS = 10V
VBus = 400V
ID = 28A
Unit
Max
Unit
µA
mΩ
V
nA
pF
nC
90
Inductive switching @125°C
VGS = 15V
VBus = 533V
ID = 28A
R G = 2.5Ω
Inductive switching @ 25°C
VGS = 15V, VBus = 533V
ID = 28A, R G = 2.5Ω
Inductive switching @ 125°C
VGS = 15V, VBus = 533V
ID = 28A, R G = 2.5Ω
Test Conditions
10
13
83
ns
35
486
µJ
278
850
µJ
342
Min
Tc = 25°C
Tc = 80°C
Typ
28
21
VGS = 0V, IS = - 28A
IS = - 28A
VR = 400V
diS/dt = 200A/µs
Max
50
375
150
3.9
±150
22
Source - Drain diode ratings and characteristics
Symbol
IS
Typ
Tj = 25°C
Tj = 125°C
Max
Unit
A
1.2
6
Tj = 25°C
550
V
V/ns
ns
Tj = 25°C
30
µC
www.microsemi.com
July, 2006
X dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ≤ - 28A di/dt ≤ 200A/µs
VR ≤ VDSS
Tj ≤ 150°C
2–6
APTC80TA15PG – Rev 1
Symbol
APTC80TA15PG
Thermal and package characteristics
Symbol
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
Characteristic
Junction to Case Thermal Resistance
Min
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500
-40
-40
-40
3
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To heatsink
M6
Typ
Max
0.45
150
125
100
5
250
Unit
°C/W
V
°C
N.m
g
SP6-P Package outline (dimensions in mm)
5 places (3:1)
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3–6
APTC80TA15PG – Rev 1
July, 2006
See application note 1902 - Mounting Instructions for SP6-P (12mm) Power Modules on www.microsemi.com
APTC80TA15PG
Thermal Impedance (°C/W)
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.5
0.45
0.9
0.4
0.35
0.7
0.3
0.5
0.25
0.2
0.3
0.15
0.1
0.1
Single Pulse
0.05
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
80
VGS=15&10V
6.5V
60
50
6V
40
5.5V
30
5V
20
4.5V
10
60
40
TJ =25°C
20
TJ =125°C
4V
0
T J=-55°C
0
0
0
5
10
15
20
25
VDS , Drain to Source Voltage (V)
1
2
3
4
5
6
7
8
VGS, Gate to Source Voltage (V)
DC Drain Current vs Case Temperature
RDS(on) vs Drain Current
1.4
30
Normalized to
V GS=10V @ 14A
1.3
ID, DC Drain Current (A)
VGS=10V
1.2
VGS=20V
1.1
1
0.9
25
20
15
10
5
0
0.8
0
10
20
30
40
I D, Drain Current (A)
50
60
25
50
75
100
125
150
TC, Case Temperature (°C)
July, 2006
RDS(on) Drain to Source ON Resistance
V DS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
80
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4–6
APTC80TA15PG – Rev 1
ID, Drain Current (A)
70
ID, Drain Current (A)
100
1.10
1.05
1.00
0.95
0.90
-50
0
50
100
150
ON resistance vs Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-50
50
100
150
Maximum Safe Operating Area
Threshold Voltage vs Temperature
1000
1.2
1.1
I D, Drain Current (A)
VGS(TH), Threshold Voltage
(Normalized)
0
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
1.0
0.9
0.8
100
0
50
100
0
1
1000
Coss
Crss
100
10
10
20
30
40
50
VDS, Drain to Source Voltage (V)
10
100
1000
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
16
ID=28A
T J=25°C
14
V DS =160V
12
VDS=400V
10
8
VDS=640V
6
4
2
0
0
40
80
120
160
200
Gate Charge (nC)
July, 2006
0
VGS, Gate to Source Voltage (V)
Ciss
1ms
Single pulse
TJ =150°C
TC=25°C
1
TC, Case Temperature (°C)
10000
100µs
100ms
150
Capacitance vs Drain to Source Voltage
100000
limited by
RDSon
10
0.7
-50
C, Capacitance (pF)
V GS=10V
ID= 14A
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5–6
APTC80TA15PG – Rev 1
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
1.15
RDS(on), Drain to Source ON resistance
(Normalized)
APTC80TA15PG
APTC80TA15PG
Delay Times vs Current
Rise and Fall times vs Current
50
100
tf
40
V DS=533V
RG=2.5Ω
T J=125°C
L=100µH
60
40
t r and tf (ns)
30
20
t d(on)
20
VDS=533V
RG=2.5Ω
T J=125°C
L=100µH
10
0
0
10
20
30
40
I D, Drain Current (A)
50
10
1200
Switching Energy (µJ)
Eon
900
600
50
Eoff
300
V DS=533V
ID=28A
T J=125°C
L=100µH
2000
1500
Eon
1000
Eon
Eoff
500
0
0
10
20
30
40
I D, Drain Current (A)
0
50
Operating Frequency vs Drain Current
350
ZVS
300
250
200
Hard
switching
150
100
IDR , Reverse Drain Current (A)
400
VDS=533V
D=50%
RG=2.5Ω
TJ=125°C
TC=75°C
ZCS
50
0
6
5
10
15
20
Gate Resistance (Ohms)
25
Source to Drain Diode Forward Voltage
1000
100
8 10 12 14 16 18 20 22 24 26
ID, Drain Current (A)
T J=150°C
10
T J=25°C
1
0.2
0.6
1
1.4
1.8
VSD, Source to Drain Voltage (V)
“COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon
Technologies AG”.
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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6–6
July, 2006
Eon and Eoff (µJ)
2500
VDS=533V
RG=2.5Ω
TJ=125°C
L=100µH
20
30
40
I D, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
1500
Frequency (kHz)
tr
APTC80TA15PG – Rev 1
td(on) and td(off) (ns)
t d(off)
80