APTC60DAM18CTG Boost chopper SiC FWD diode Super Junction MOSFET Power Module NTC2 VBUS VBUS SENSE VDSS = 600V RDSon = 18mΩ max @ Tj = 25°C ID = 143A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • - OUT Q2 G2 • FWD SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF • • Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration S2 NTC1 G2 S2 VBUS VBUS SENSE 0/VBUS ID IDM VGS RDSon PD IAR EAR EAS OUT OUT S2 NTC2 G2 NTC1 Absolute maximum ratings Symbol VDSS • • Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS compliant Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 600 143 107 572 ±30 18 833 20 1 1800 Unit V A V mΩ W A July, 2006 0/VBU S Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–7 APTC60DAM18CTG – Rev 3 CR1 APTC60DAM18CTG All ratings @ Tj = 25°C unless otherwise specified IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions Min VGS = 0V,VDS = 600V VGS = 10V, ID = 71.5A VGS = VDS, ID = 4mA VGS = ±20 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz 3 Min Typ 28 10.2 0.85 1036 Unit Max Unit µA mΩ V nA nF nC 444 21 30 84 1608 Inductive switching @ 125°C VGS = 15V, VBus = 400V ID = 143A, R G = 1.2Ω 2630 Test Conditions µJ 4824 Typ Max 0.5 1 100 1.6 2.0 2 10 IF DC Forward Current VF Diode Forward Voltage IF = 100A QC Total Capacitive Charge IF = 100A, VR = 300V di/dt =2400A/µs 140 C Total Capacitance f = 1MHz, VR = 200V 650 f = 1MHz, VR = 400V 500 www.microsemi.com µJ 3920 Min 600 Tj = 25°C Tj = 175°C Tc = 125°C Tj = 25°C Tj = 175°C ns 283 Inductive switching @ 25°C VGS = 15V, VBus = 400V ID = 143A, R G = 1.2Ω VR=600V Max 100 1000 18 3.9 ±200 116 Inductive switching @ 125°C VGS = 15V VBus = 400V ID = 143A R G = 1.2Ω Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current 2.1 VGS = 10V VBus = 300V ID = 143A Chopper diode ratings and characteristics IRM Typ Tj = 25°C Tj = 125°C VGS = 0V,VDS = 600V Unit V mA A 1.8 2.4 V July, 2006 Symbol nC pF 2–7 APTC60DAM18CTG – Rev 3 Electrical Characteristics APTC60DAM18CTG Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Transistor Diode Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Typ To heatsink M5 2500 -40 -40 -40 2.5 RT = Min R 25 Unit °C/W V 150 125 100 4.7 160 Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K Max 0.15 0.28 Typ 50 3952 Max °C N.m g Unit kΩ K T: Thermistor temperature 1 1 RT : Thermistor value at T exp B 25 / 85 − T25 T ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS : See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com www.microsemi.com 3–7 APTC60DAM18CTG – Rev 3 July, 2006 SP4 Package outline (dimensions in mm) APTC60DAM18CTG Typical CoolMOS Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.16 0.14 0.9 0.12 0.7 0.1 0.5 0.08 0.06 0.3 0.04 0.1 0.02 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Transfert Characteristics Low Voltage Output Characteristics 540 800 6.5V 6V 500 400 5.5V 300 5V 200 4.5V 100 VDS > ID(on)xRDS (on)MAX 250µs pulse test @ < 0.5 duty cycle 450 360 270 180 TJ=125°C 90 TJ=25°C 4V 0 T J=-55°C 0 0 5 10 15 20 VDS, Drain to Source Voltage (V) 25 0 1.05 V GS=10V V GS=20V 1 7 DC Drain Current vs Case Temperature 160 RDS(on) vs Drain Current 1.1 Normalized to VGS =10V @ 71.5A 1 2 3 4 5 6 VGS, Gate to Source Voltage (V) 0.95 140 120 100 0.9 80 60 40 20 0 40 80 120 160 200 240 I D, Drain Current (A) www.microsemi.com 25 50 75 100 125 TC, Case Temperature (°C) 150 July, 2006 0 4–7 APTC60DAM18CTG – Rev 3 RDS(on) Drain to Source ON Resistance I D, Drain Current (A) VGS=15&10V 600 I D, DC Drain Current (A) ID, Drain Current (A) 700 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) Threshold Voltage vs Temperature Maximum Safe Operating Area 1000 1.1 I D, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 1.2 1.0 0.9 0.8 0.7 limited by RDSon 100µs 100 1 ms 10 0.6 Single pulse TJ =150°C TC=25°C 10 ms 1 -50 -25 0 25 50 75 100 125 150 1 Ciss Coss 1000 Crss 100 10 1000 14 ID=143A TJ=25°C 12 10 VDS=120V V DS=300V 8 VDS=480V 6 4 2 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) 0 200 400 600 800 Gate Charge (nC) 1000 1200 July, 2006 0 100 Gate Charge vs Gate to Source Voltage VGS , Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 10000 10 VDS, Drain to Source Voltage (V) TC, Case Temperature (°C) C, Capacitance (pF) V GS=10V ID= 143A www.microsemi.com 5–7 APTC60DAM18CTG – Rev 3 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTC60DAM18CTG APTC60DAM18CTG Delay Times vs Current 350 td(off) 300 250 VDS=400V RG=1.2Ω TJ=125°C L=100µH 200 150 VDS=400V RG=1.2Ω T J=125°C L=100µH 100 80 tr and t f (ns) 100 60 40 tr 50 20 td(on) 0 0 40 80 120 160 200 0 240 0 ID, Drain Current (A) 80 120 160 200 240 Switching Energy vs Gate Resistance 20 VDS=400V RG=1.2Ω TJ=125°C L=100µH E off Switching Energy (mJ) Switching Energy (mJ) 10 9 8 7 6 5 4 3 2 1 0 40 ID, Drain Current (A) Switching Energy vs Current Eon V DS =400V ID=143A T J=125°C L=100µH 15 Eoff 10 E on 5 0 0 40 80 120 160 200 ID, Drain Current (A) 240 Operating Frequency vs Drain Current 140 120 ZCS 100 ZVS 80 VDS=400V D=50% RG=1.2Ω T J=125°C T C=75°C 60 40 20 0 Hard switching 100 TJ=25°C 10 130 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V) July, 2006 50 70 90 110 ID, Drain Current (A) 12.5 T J=150°C 0 30 2.5 5 7.5 10 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000 I DR, Reverse Drain Current (A) 160 Frequency (kHz) tf www.microsemi.com 6–7 APTC60DAM18CTG – Rev 3 td(on) and td(off) (ns) Rise and Fall times vs Current 120 APTC60DAM18CTG Typical SiC Diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.3 0.9 0.25 0.7 0.2 0.5 0.15 0.3 0.1 0.1 0.05 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) 2000 TJ=25°C 150 TJ =75°C IR Reverse Current (µA) I F Forward Current (A) Reverse Characteristics Forward Characteristics 200 TJ=175°C 100 TJ =125°C 50 TJ =175°C 1500 TJ =125°C 1000 500 0 0 0.5 1 1.5 2 2.5 3 TJ =75°C 3.5 VF Forward Voltage (V) 0 200 TJ=25°C 300 400 500 600 700 VR Reverse Voltage (V) 800 Capacitance vs.Reverse Voltage C, Capacitance (pF) 4000 3000 2000 1000 0 1000 “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 7–7 July, 2006 10 100 VR Reverse Voltage APTC60DAM18CTG – Rev 3 1