APTGV25H120BG Trench & Field Stop IGBT Q1, Q3: VCES = 1200V , IC = 25A @ Tc = 80°C Boost chopper + Full - Bridge NPT & Trench + Field Stop IGBT Power module K K VBUS1 Fast NPT IGBT Q5: VCES = 1200V ; IC = 50A @ Tc = 80°C VBUS2 Q1 CR5 Q3 G3 CR3 CR1 G1 Fast NPT IGBT Q2, Q4: VCES = 1200V ; IC = 25A @ Tc = 80°C Application • Solar converter C5 OUT1A OUT2A C5 OUT1B OUT2B Q5 Features Q2 G5 CR5B EK5 G2 Q4 CR2 G4 CR4 E2 E4 E5 E5 0/VBUS Full bridge top switches : Trench + Field Stop IGBT Full bridge bottom switches : FAST NPT IGBT Q5 boost chopper : FAST NPT IGBT • Q2, Q4, Q5(FAST Non Punch Through (NPT) IGBT) - Switching frequency up to 100 kHz - RBSOA & SCSOA rated - Low tail current • Q1, Q3 (Trench & Field Stop IGBT) - Low voltage drop - Switching frequency up to 20 kHz - RBSOA & SCSOA rated - Low tail current • Kelvin emitter for easy drive • Very low stray inductance • High level of integration Benefits • • • • Optimized conduction & switching losses Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting • Low profile • Easy paralleling due to positive TC of VCEsat • RoHS Compliant K G1 K G3 OUT 1B VBUS 1 OUT 1A C5 VBUS 2 OUT 2B OUT 2A C5 G5 EK5 G2 E5 G4 E5 E2 0/VBUS E4 These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1 - 14 APTGV25H120BG – Rev 0 September, 2007 All multiple inputs and outputs must be shorted together OUT1A/OUT1B ; VBUS1/VBUS2 ; K/K ; … APTGV25H120BG All ratings @ Tj = 25°C unless otherwise specified 1. Full bridge top switches 1.1 Top Trench + Field Stop IGBT characteristics Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA TC = 25°C Max ratings 1200 40 25 50 ±20 156 Tj = 125°C 50A @ 1150V TC = 25°C TC = 80°C TC = 25°C Reverse Bias Safe Operation Area Unit V A V W Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25°C VGE = 15V IC = 25A Tj = 125°C VGE = VCE , IC = 1mA VGE = 20V, VCE = 0V Min Typ 5.0 1.7 2.0 5.8 Max Unit 250 2.1 µA 6.5 400 V nA Max Unit V Dynamic Characteristics Td(on) Tr Td(off) Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy RthJC Junction to Case Thermal resistance Test Conditions VGE = 0V, VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 25A RG = 27Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 25A RG = 27Ω VGE = ±15V Tj = 25°C VBus = 600V Tj = 125°C IC = 25A Tj = 25°C RG = 27Ω Tj = 125°C Min Typ 1800 82 90 30 420 pF ns 70 90 50 520 ns 90 1.9 2.5 1.9 2.9 mJ 0.8 www.microsemi.com °C/W 2 - 14 September, 2007 Tf Characteristic Input Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time APTGV25H120BG – Rev 0 Symbol Cies Cres Td(on) Tr Td(off) APTGV25H120BG 1.2 Top fast diode characteristics Symbol Characteristic VRRM IRM IF VF Min Maximum Reverse Leakage Current VR=1200V DC Forward Current Reverse Recovery Time Qrr Reverse Recovery Charge Max IF = 25A VR = 667V di/dt =200A/µs Unit V Tj = 25°C Tj = 125°C 100 500 Tc = 80°C IF = 25A IF = 50A IF = 25A Diode Forward Voltage Typ 1200 Maximum Peak Repetitive Reverse Voltage trr RthJC Test Conditions Tj = 125°C 25 2.6 3.2 1.8 Tj = 25°C 320 Tj = 125°C Tj = 25°C 360 480 Tj = 125°C 1800 Junction to Case Thermal resistance µA A 3.1 V ns nC 1.4 °C/W 2. Full bridge bottom switches 2.1 Bottom Fast NPT IGBT characteristics Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA TC = 25°C Max ratings 1200 40 25 100 ±20 208 Tj = 125°C 50A@1150V TC = 25°C TC = 80°C TC = 25°C Reverse Bias Safe Operating Area Unit V A V W Electrical Characteristics Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Tj = 25°C Tj = 125°C Tj = 25°C VGE =15V IC = 25A Tj = 125°C VGE = VCE , IC = 1mA VGE = 20V, VCE = 0V Min Typ www.microsemi.com 2.5 4 3.2 4.0 Max 250 500 3.7 6 400 Unit µA V V nA September, 2007 ICES Test Conditions VGE = 0V VCE = 1200V 3 - 14 APTGV25H120BG – Rev 0 Symbol Characteristic APTGV25H120BG Dynamic Characteristics Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Emitter Charge Gate – Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE = 15V VBus = 300V IC =25A Inductive Switching (25°C) VGE = 15V VBus = 400V IC = 25A RG = 22Ω Inductive Switching (125°C) VGE = 15V VBus = 400V IC = 25A RG = 22Ω VGE = 15V Tj = 125°C VBus = 400V IC = 25A Tj = 125°C RG = 22Ω Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy RthJC Junction to Case Thermal resistance Min Typ 1650 250 110 160 10 70 60 50 305 Max Unit pF nC ns 30 60 50 346 ns 40 3.5 mJ 1.5 0.6 °C/W Max Unit 2.2 Bottom diode characteristics Symbol Characteristic IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge RthJC 1200 Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current Typ VR=1200V Tj = 25°C Tj = 125°C Tc = 80°C IF = 25A IF = 50A IF = 25A IF = 25A VR = 667V di/dt =200A/µs Junction to Case Thermal resistance V 100 500 Tj = 125°C 25 2.6 3.2 1.8 Tj = 25°C 320 Tj = 125°C Tj = 25°C 360 480 Tj = 125°C 1800 µA A 3.1 V ns nC 1.4 °C/W September, 2007 IRM Min www.microsemi.com 4 - 14 APTGV25H120BG – Rev 0 VRRM Test Conditions APTGV25H120BG 3. Boost chopper switches 3.1 Fast NPT IGBT characteristics Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Tc = 25°C Tc = 80°C Tc = 25°C Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area Tc = 25°C Tj = 150°C Max ratings 1200 70 50 150 ±20 312 100A @ 1200V Unit V A V W Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V Tj = 25°C VCE = 1200V Tj = 125°C Tj = 25°C VGE =15V IC = 50A Tj = 125°C VGE = VCE, IC = 1 mA VGE = 20 V, VCE = 0V Min Test Conditions VGE = 0V VCE = 25V f = 1MHz Min Typ 3.2 4.0 4.5 Max 250 500 3.7 Unit 6.5 100 V nA Max Unit µA V Dynamic Characteristics Td(off) Turn-off Delay Time Tf Td(on) Tr Fall Time Turn-on Delay Time Rise Time Td(off) Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy RthJC Junction to Case Thermal resistance VGS = 15V VBus = 600V IC = 50A Inductive Switching (25°C) VGE = 15V VBus = 600V IC = 50A RG = 5 Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 50A RG = 5 Ω VGE = ±15V Tj = 125°C VBus = 600V IC = 50A Tj = 125°C RG = 5 Ω Typ 3450 330 220 330 35 200 35 65 pF nC ns 320 30 35 65 ns 360 40 6.9 mJ 3.05 0.4 www.microsemi.com °C/W 5 - 14 September, 2007 Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Emitter Charge Gate – Collector Charge Turn-on Delay Time Rise Time APTGV25H120BG – Rev 0 Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr APTGV25H120BG 3.2 Chopper diode characteristics Symbol Characteristic VRRM IRM IF VF Maximum Reverse Leakage Current Min Diode Forward Voltage Reverse Recovery Time Qrr Reverse Recovery Charge Typ Max 1200 VR=1200V DC Forward Current trr RthJC Test Conditions Maximum Peak Repetitive Reverse Voltage IF = 30A VR = 800V di/dt =200A/µs V Tj = 25°C Tj = 125°C 100 500 Tc = 80°C IF = 30A IF = 60A IF = 30A Unit Tj = 125°C 30 2.6 3.2 1.8 Tj = 25°C 300 Tj = 125°C Tj = 25°C 380 360 Tj = 125°C 1700 Junction to Case Thermal resistance µA A 3.1 V ns nC 1.2 °C/W Max Unit V 4. Package characteristics Symbol Characteristic VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz TJ Operating junction temperature range TSTG Storage Temperature Range TC Operating Case Temperature Torque Mounting torque To heatsink M5 Wt Package Weight * Tj=175°C for Trench & Field Stop IGBT Min 2500 -40 -40 -40 2.5 Typ 150* 125 100 4.7 160 °C N.m g See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com www.microsemi.com 6 - 14 APTGV25H120BG – Rev 0 September, 2007 5. SP4 Package outline (dimensions in mm) APTGV25H120BG 6. Full bridge top switches curves 6.1 Top Trench + Field Stop IGBT typical performance curves Output Characteristics (VGE=15V) Output Characteristics 50 50 TJ = 125°C TJ=25°C VGE=17V 30 IC (A) IC (A) TJ=125°C 20 20 10 10 VGE=9V 0 0 0.5 1 1.5 2 VCE (V) 2.5 3 0 3.5 6 TJ=25°C E (mJ) 4 30 2 VCE (V) VCE = 600V VGE = 15V RG = 27Ω TJ = 125°C 5 40 1 3 4 Energy losses vs Collector Current Transfert Characteristics 50 IC (A) VGE=15V 30 0 TJ=125°C 20 Eon Eoff Eon 3 2 10 1 TJ=25°C 0 0 5 6 7 8 9 10 11 0 12 10 Switching Energy Losses vs Gate Resistance VCE = 600V VGE =15V IC = 25A TJ = 125°C 7 6 5 40 50 Reverse Bias Safe Operating Area Eon 50 40 4 Eoff 3 30 20 Eon 2 30 60 IC (A) 8 20 IC (A) VGE (V) E (mJ) VGE=13V 40 40 VGE=15V TJ=125°C RG=27Ω 10 1 0 0 0 40 80 120 160 Gate Resistance (ohms) 200 0 300 600 900 VCE (V) 1200 1500 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.8 0.9 0.7 0.5 0.4 0.3 0.7 0.5 September, 2007 0.6 0.3 0.2 0.1 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 7 - 14 APTGV25H120BG – Rev 0 Thermal Impedance (°C/W) 0.9 APTGV25H120BG 6.2 Top Fast diode typical performance curves Forw ard Current vs Forw ard Voltage IF, Forward Current (A) 60 50 T J=125°C 40 T J=25°C 30 20 10 0 0.0 1.0 2.0 3.0 4.0 V F, Anode to Cathode Voltage (V) Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration 1.2 1 0.9 0.7 0.8 0.5 0.6 0.3 0.4 0.2 0 0.00001 0.1 0.05 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) September, 2007 1.4 www.microsemi.com 8 - 14 APTGV25H120BG – Rev 0 Thermal Impedance (°C/W) 1.6 APTGV25H120BG 7. Full bridge bottom switches curves 7.1 Bottom fast NPT IGBT typical performance curves Output characteristics (VGE=15V) 250µs Pulse Test < 0.5% Duty cycle 70 50 TJ=125°C 40 30 20 10 16 TJ=25°C 12 8 TJ=125°C 4 0 0 1 2 3 4 5 6 7 VCE, Collector to Emitter Voltage (V) 0 8 VGE, Gate to Emitter Voltage (V) Transfer Characteristics 120 250µs Pulse Test < 0.5% Duty cycle 100 80 60 40 TJ=125°C 20 TJ=25°C 0 2.5 5 7.5 10 12.5 VGE, Gate to Emitter Voltage (V) TJ = 125°C 250µs Pulse Test < 0.5% Duty cycle 8 7 Ic=50A 6 5 Ic=25A 4 3 2 Ic=12.5A 1 0 9 10 11 12 13 14 15 IC = 25A TJ = 25°C 16 2 2.5 3 3.5 VCE=240V VCE=600V 14 12 10 VCE=960V 8 6 4 2 0 0 16 6 30 60 90 120 150 180 On state Voltage vs Junction Temperature Ic=50A 5 Ic=25A 4 3 Ic=12.5A 2 250µs Pulse Test < 0.5% Duty cycle VGE = 15V 1 0 25 VGE, Gate to Emitter Voltage (V) 50 Ic, DC Collector Current (A) 1.10 1.05 1.00 0.95 0.90 50 75 100 TJ, Junction Temperature (°C) 125 DC Collector Current vs Case Temperature 40 September, 2007 Breakdown Voltage vs Junction Temp. Collector to Emitter Breakdown Voltage (Normalized) 1.5 Gate Charge (nC) On state Voltage vs Gate to Emitter Volt. 9 1 Gate Charge 18 15 VCE, Collector to Emitter Voltage (V) 0 0.5 VCE, Collector to Emitter Voltage (V) 30 20 10 0 25 50 75 100 125 TJ, Junction Temperature (°C) www.microsemi.com 25 50 75 100 125 TC, Case Temperature (°C) 150 9 - 14 APTGV25H120BG – Rev 0 0 Ic, Collector Current (A) 250µs Pulse Test < 0.5% Duty cycle TJ=25°C 60 VCE, Collector to Emitter Voltage (V) Output Characteristics (VGE=10V) 20 Ic, Collector Current (A) Ic, Collector Current (A) 80 APTGV25H120BG Turn-Off Delay Time vs Collector Current td(off), Turn-Off Delay Time (ns) VCE = 600V RG = 22Ω 70 65 VGE = 15V 60 55 50 5 15 25 35 45 400 VGE=15V, TJ=125°C 350 300 250 200 55 5 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current VCE = 600V RG = 22Ω 120 45 tf, Fall Time (ns) tr, Rise Time (ns) 35 45 55 Current Fall Time vs Collector Current 80 VGE=15V 40 0 5 TJ = 125°C 40 35 TJ = 25°C 30 15 25 35 45 VCE = 600V, VGE = 15V, RG = 22Ω 20 55 5 ICE, Collector to Emitter Current (A) VCE = 600V RG = 22Ω 8 TJ=125°C, VGE=15V 6 TJ=25°C, VGE=15V 4 2 0 55 4 VCE = 600V VGE = 15V RG = 22Ω 3 TJ = 125°C 2 TJ = 25°C 1 0 5 15 25 35 45 ICE, Collector to Emitter Current (A) 55 5 Switching Energy Losses vs Gate Resistance 15 25 35 45 ICE, Collector to Emitter Current (A) 55 Reverse Bias Safe Operating Area 60 IC, Collector Current (A) Eon, 25A 3 Eoff, 25A 2 1 0 50 40 30 September, 2007 VCE = 600V VGE = 15V TJ= 125°C 4 15 25 35 45 ICE, Collector to Emitter Current (A) Turn-Off Energy Loss vs Collector Current Turn-On Energy Loss vs Collector Current 10 Eoff, Turn-off Energy Loss (mJ) Eon, Turn-On Energy Loss (mJ) 25 50 25 Switching Energy Losses (mJ) 15 ICE, Collector to Emitter Current (A) 160 5 VGE=15V, TJ=25°C VCE = 600V RG = 22Ω 20 10 0 0 10 20 30 40 50 60 0 400 800 1200 VCE, Collector to Emitter Voltage (V) Gate Resistance (Ohms) www.microsemi.com 10 - 14 APTGV25H120BG – Rev 0 td(on), Turn-On Delay Time (ns) Turn-On Delay Time vs Collector Current 75 APTGV25H120BG Fmax, Operating Frequency (kHz) C, Capacitance (pF) Capacitance vs Collector to Emitter Voltage 10000 Cies 1000 Coes 100 Cres 10 0 10 20 30 40 VCE, Collector to Emitter Voltage (V) Thermal Impedance (°C/W) 0.5 100 80 ZVS VCE = 600V D = 50% RG = 22Ω TJ = 125°C TC= 75°C 60 40 Hard switching ZCS 20 0 50 0 10 20 30 IC, Collector Current (A) 40 Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.7 0.6 Operating Frequency vs Collector Current 120 0.9 0.7 0.4 0.3 0.2 0.1 0.5 0.3 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) 7.2 Bottom diode typical performance curves Forw ard Current vs Forw ard Voltage IF, Forward Current (A) 60 50 T J=125°C 40 T J=25°C 30 20 10 0 0.0 1.0 2.0 3.0 4.0 V F, Anode to Cathode Voltage (V) Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration 1.2 1 0.9 0.7 0.8 0.5 0.6 0.3 0.4 0.2 0 0.00001 0.1 0.05 September, 2007 1.4 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) www.microsemi.com 11 - 14 APTGV25H120BG – Rev 0 Thermal Impedance (°C/W) 1.6 APTGV25H120BG 8. Boost chopper switches curves 8.1 Fast NPT IGBT typical performance curves Output characteristics (VGE=15V) 250µs Pulse Test < 0.5% Duty cycle 160 TJ=25°C 120 TJ=125°C 80 40 2 4 6 VCE, Collector to Emitter Voltage (V) TJ=25°C 30 20 TJ=125°C 10 0 8 1 2 3 VCE, Collector to Emitter Voltage (V) VGE, Gate to Emitter Voltage (V) TJ=25°C 200 150 100 TJ=125°C 50 TJ=25°C 0 0 4 8 12 VGE, Gate to Emitter Voltage (V) 8 7 5 Ic=50A 4 3 2 Ic=25A 1 0 9 VCE=600V 12 10 VCE=960V 8 6 4 2 0 50 100 150 200 250 300 350 Gate Charge (nC) Ic=100A 6 14 0 VCE, Collector to Emitter Voltage (V) TJ = 25°C 250µs Pulse Test < 0.5% Duty cycle VCE=240V IC = 50A TJ = 25°C 16 16 On state Voltage vs Gate to Emitter Volt. 9 18 10 11 12 13 14 15 VGE, Gate to Emitter Voltage (V) 6 Breakdown Voltage vs Junction Temp. 3 Ic=25A 2 Ic, DC Collector Current (A) 1.00 0.95 0.90 0.85 250µs Pulse Test < 0.5% Duty cycle VGE = 15V 1 0 70 1.05 Ic=50A 4 25 1.20 1.10 Ic=100A 5 16 1.15 On state Voltage vs Junction Temperature 0.80 50 75 100 TJ, Junction Temperature (°C) 125 DC Collector Current vs Case Temperature 60 September, 2007 250µs Pulse Test < 0.5% Duty cycle 250 4 Gate Charge Transfer Characteristics 300 Ic, Collector Current (A) 40 50 40 30 20 10 0 25 50 75 100 125 TJ, Junction Temperature (°C) www.microsemi.com 25 50 75 100 125 TC, Case Temperature (°C) 150 12 - 14 APTGV25H120BG – Rev 0 0 VCE, Collector to Emitter Voltage (V) 250µs Pulse Test < 0.5% Duty cycle 0 0 Collector to Emitter Breakdown Voltage (Normalized) Output Characteristics (VGE=10V) 50 Ic, Collector Current (A) Ic, Collector Current (A) 200 APTGV25H120BG Turn-Off Delay Time vs Collector Current td(off), Turn-Off Delay Time (ns) td(on), Turn-On Delay Time (ns) Turn-On Delay Time vs Collector Current 45 VCE = 600V RG = 5Ω 40 VGE = 15V 35 30 25 0 25 50 75 100 400 VGE=15V, TJ=125°C 350 300 VGE=15V, TJ=25°C 250 VCE = 600V RG = 5Ω 200 125 0 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current 50 75 100 125 Current Fall Time vs Collector Current 50 180 VCE = 600V RG = 5Ω 140 tf, Fall Time (ns) tr, Rise Time (ns) 25 ICE, Collector to Emitter Current (A) 100 VGE=15V 60 TJ = 125°C 40 30 TJ = 25°C VCE = 600V, VGE = 15V, RG = 5Ω 20 20 125 TJ=125°C, VGE=15V 20 16 12 TJ=25°C, VGE=15V 8 4 0 25 50 75 100 ICE, Collector to Emitter Current (A) Eoff, 50A 8 6 Eon, 25A 4 2 4 TJ = 25°C 2 0 0 IC, Collector Current (A) Eon, 50A 6 TJ = 125°C 25 50 75 100 ICE, Collector to Emitter Current (A) 125 Reverse Bias Safe Operating Area 12 10 VCE = 600V VGE = 15V RG = 5Ω 120 VCE = 600V VGE = 15V TJ= 125°C 14 8 125 Switching Energy Losses vs Gate Resistance 18 16 125 100 80 60 September, 2007 VCE = 600V RG = 5Ω 24 25 50 75 100 ICE, Collector to Emitter Current (A) Turn-Off Energy Loss vs Collector Current Turn-On Energy Loss vs Collector Current 28 0 Switching Energy Losses (mJ) 0 40 20 Eoff, 25A 0 0 0 10 20 30 40 Gate Resistance (Ohms) 50 www.microsemi.com 0 400 800 1200 VCE, Collector to Emitter Voltage (V) 13 - 14 APTGV25H120BG – Rev 0 25 50 75 100 ICE, Collector to Emitter Current (A) Eoff, Turn-off Energy Loss (mJ) Eon, Turn-On Energy Loss (mJ) 0 APTGV25H120BG Cies 1000 Coes Cres 100 0 10 20 30 40 VCE, Collector to Emitter Voltage (V) 0.4 Operating Frequency vs Collector Current 120 VCE = 600V D = 50% RG = 5Ω TJ = 125°C TC= 75°C 100 80 ZVS 60 ZCS 40 20 Hard switching 0 50 10 20 30 40 50 IC, Collector Current (A) 60 Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.45 Thermal Impedance (°C/W) Fmax, Operating Frequency (kHz) C, Capacitance (pF) Capacitance vs Collector to Emitter Voltage 10000 0.9 0.35 0.3 0.25 0.7 0.5 0.2 0.3 0.15 0.1 0.05 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) 8.2 Chopper diode typical performance curves Forw ard Current vs Forw ard Voltage IF, Forward Current (A) 80 60 T J=125°C 40 T J=25°C 20 0 0.0 1.0 2.0 3.0 4.0 V F, Anode to Cathode Voltage (V) Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration 1.2 1 0.8 0.9 0.7 0.5 0.6 0.2 0 0.00001 0.3 0.1 0.05 September, 2007 0.4 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 14 - 14 APTGV25H120BG – Rev 0 Thermal Impedance (°C/W) 1.4