APTGF15H120T1G Full - Bridge NPT IGBT Power Module 3 4 Q3 Q1 CR1 CR3 2 5 6 1 Q4 Q2 CR2 CR4 7 9 8 11 10 NTC 12 VCES = 1200V IC = 15A @ Tc = 80°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Very low stray inductance - Symmetrical design • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Each leg can be easily paralleled to achieve a phase leg of twice the current capability • RoHS Compliant Pins 3/4 must be shorted together Absolute maximum ratings IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA TC = 25°C Max ratings 1200 25 15 60 ±20 140 Tj = 125°C 30A@1150V TC = 25°C TC = 80°C TC = 25°C Reverse Bias Safe Operating Area Unit V A August, 2007 Parameter Collector - Emitter Breakdown Voltage V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTGF15H120T1G – Rev 0 Symbol VCES APTGF15H120T1G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions Min Tj = 25°C Tj = 125°C T j = 25°C VGE =15V IC = 15A Tj = 125°C VGE = VCE, IC = 1mA VGE = 20V, VCE = 0V Typ VGE = 0V VCE = 1200V 2.5 3.2 4.0 4 Max 250 500 3.7 Unit µA V 6 400 V nA Max Unit Dynamic Characteristics Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Emitter Charge Gate – Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE = 15V VBus = 600V IC =15A Inductive Switching (25°C) VGE = 15V VBus = 600V IC = 15A RG = 33Ω Inductive Switching (125°C) VGE = 15V VBus = 600V IC = 15A RG = 33Ω VGE = 15V Tj = 125°C VBus = 600V IC = 15A Tj = 125°C RG = 33Ω Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Min Typ 1000 150 70 99 10 70 60 50 315 pF nC ns 30 60 50 356 ns 40 2 mJ 1 Reverse diode ratings and characteristics IRM IF VF Test Conditions Min Maximum Reverse Leakage Current VR=1200V DC Forward Current Diode Forward Voltage Reverse Recovery Time Qrr Reverse Recovery Charge Max Tc = 80°C IF = 15A VR = 800V di/dt =200A/µs www.microsemi.com Unit V Tj = 25°C Tj = 125°C IF = 15A IF = 30A IF = 15A trr Typ 1200 Maximum Peak Repetitive Reverse Voltage 100 500 15 2.8 3.4 Tj = 125°C 2.4 Tj = 25°C 240 Tj = 125°C Tj = 25°C 290 260 Tj = 125°C 960 µA A 3.3 August, 2007 VRRM V ns nC 2–6 APTGF15H120T1G – Rev 0 Symbol Characteristic APTGF15H120T1G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Typ IGBT Diode To heatsink M4 2500 -40 -40 -40 2.5 Max 0.9 2 Unit °C/W V 150 125 100 4.7 80 °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K RT = Min Typ 50 3952 Max Unit kΩ K R25 T: Thermistor temperature 1 1 RT: Thermistor value at T exp B25 / 85 − T25 T See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com www.microsemi.com 3–6 APTGF15H120T1G – Rev 0 August, 2007 SP1 Package outline (dimensions in mm) APTGF15H120T1G Typical Performance Curve Output characteristics (VGE=15V) 40 TJ=25°C 30 TJ=125°C 20 10 10 TJ=25°C 8 6 4 TJ=125°C 2 1 2 3 4 5 6 7 VCE, Collector to Emitter Voltage (V) 0 8 VGE, Gate to Emitter Voltage (V) Transfer Characteristics 50 250µs Pulse Test < 0.5% Duty cycle 40 30 20 TJ=125°C 10 TJ=25°C 0 2.5 5 7.5 10 12.5 VGE, Gate to Emitter Voltage (V) TJ = 125°C 250µs Pulse Test < 0.5% Duty cycle 8 7 Ic=30A 6 5 Ic=15A 4 3 2 Ic=7.5A 1 0 9 10 11 12 13 14 IC = 15A TJ = 25°C 16 2 2.5 3 3.5 VCE=240V VCE=600V 14 12 VCE=960V 10 8 6 4 2 0 0 15 16 6 20 40 60 80 100 120 On state Voltage vs Junction Temperature Ic=30A 5 Ic=15A 4 3 Ic=7.5A 2 250µs Pulse Test < 0.5% Duty cycle VGE = 15V 1 0 25 VGE, Gate to Emitter Voltage (V) 25 Ic, DC Collector Current (A) 1.10 1.05 1.00 0.95 0.90 50 75 100 TJ, Junction Temperature (°C) 125 DC Collector Current vs Case Temperature 20 August, 2007 Breakdown Voltage vs Junction Temp. Collector to Emitter Breakdown Voltage (Normalized) 1.5 Gate Charge (nC) On state Voltage vs Gate to Emitter Volt. 9 1 Gate Charge 18 15 VCE, Collector to Emitter Voltage (V) 0 0.5 VCE, Collector to Emitter Voltage (V) 15 10 5 0 25 50 75 100 125 TJ, Junction Temperature (°C) www.microsemi.com 25 50 75 100 125 TC, Case Temperature (°C) 150 4–6 APTGF15H120T1G – Rev 0 0 Ic, Collector Current (A) 250µs Pulse Test < 0.5% Duty cycle 0 0 VCE, Collector to Emitter Voltage (V) Output Characteristics (VGE=10V) 12 250µs Pulse Test < 0.5% Duty cycle Ic, Collector Current (A) Ic, Collector Current (A) 50 APTGF15H120T1G Turn-Off Delay Time vs Collector Current VCE = 600V RG = 33Ω 70 65 VGE = 15V 60 55 50 0 5 10 15 20 25 400 td(off), Turn-Off Delay Time (ns) 30 VGE=15V, TJ=125°C 350 300 250 200 35 0 5 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current VCE = 600V RG = 33Ω 120 45 tf, Fall Time (ns) tr, Rise Time (ns) 20 25 30 35 Current Fall Time vs Collector Current 80 VGE=15V 40 TJ = 125°C 40 35 TJ = 25°C 30 0 0 5 10 15 20 25 30 VCE = 600V, VGE = 15V, RG = 33Ω 20 35 0 5 10 15 20 25 30 ICE, Collector to Emitter Current (A) ICE, Collector to Emitter Current (A) VCE = 600V RG = 33Ω 7 6 TJ=125°C, VGE=15V 5 4 TJ=25°C, VGE=15V 3 2 1 0 0 5 10 15 20 25 30 ICE, Collector to Emitter Current (A) TJ = 125°C 1.5 TJ = 25°C 1 0.5 0 35 0 5 10 15 20 25 30 ICE, Collector to Emitter Current (A) 35 Reverse Bias Safe Operating Area 35 Eon, 15A 5 4 Eoff, 15A 3 2 1 30 25 August, 2007 IC, Collector Current (A) VCE = 600V VGE = 15V TJ= 125°C 6 VCE = 600V VGE = 15V RG = 33Ω 2 Switching Energy Losses vs Gate Resistance 7 35 Turn-Off Energy Loss vs Collector Current 2.5 Turn-On Energy Loss vs Collector Current 8 Eoff, Turn-off Energy Loss (mJ) Eon, Turn-On Energy Loss (mJ) 15 50 25 Switching Energy Losses (mJ) 10 ICE, Collector to Emitter Current (A) 160 8 VGE=15V, TJ=25°C VCE = 600V RG = 33Ω 20 15 10 0 5 0 0 20 40 60 80 100 120 0 400 800 1200 VCE, Collector to Emitter Voltage (V) Gate Resistance (Ohms) www.microsemi.com 5–6 APTGF15H120T1G – Rev 0 td(on), Turn-On Delay Time (ns) Turn-On Delay Time vs Collector Current 75 APTGF15H120T1G Fmax, Operating Frequency (kHz) C, Capacitance (pF) Capacitance vs Collector to Emitter Voltage 10000 Cies 1000 Coes 100 Cres 10 0 10 20 30 40 VCE, Collector to Emitter Voltage (V) VCE = 600V D = 50% RG = 33Ω TJ = 125°C TC= 75°C 100 80 ZVS 60 40 Hard switching 20 ZCS 0 50 0 5 10 15 20 IC, Collector Current (A) 25 Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1 Thermal Impedance (°C/W) Operating Frequency vs Collector Current 120 0.9 0.8 0.7 0.6 0.4 0.2 0.5 0.3 Single Pulse 0.1 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6 APTGF15H120T1G – Rev 0 August, 2007 Rectangular Pulse Duration (Seconds)