MICROSEMI APT50DL60BCTG

APT50DL60BCT(G)
600V 50A
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Ultrasoft Recovery Rectifier Diode
PRODUCT APPLICATIONS
PRODUCT FEATURES
PRODUCT BENEFITS
• Anti-Parallel Diode
-Switchmode Power Supply
-Inverters
• Ultrasoft Recovery Times (trr)
• Soft Switching - High Qrr
• Popular TO-247 Package or
Surface Mount D3PAK Package
• Low Noise Switching
- Reduced Ringing
• Ultra Low Forward Voltage
• Higher Reliability Systems
• Low Leakage Current
• Minimizes or eliminates
snubber
• Applications
- Induction Heating
• Resonant Mode Circuits
-ZVS and ZCS Topologies
- Phase Shifted Bridge
1
3
2
1 - Anode 1
2 - Common Cathode
Back of Case - Cathode
3 - Anode 2
All Ratings per leg : TC = 25°C unless otherwise specified.
MAXIMUM RATINGS
Symbol
VR
Characteristic / Test Conditions
Ratings
Unit
600
Volts
Maximum D.C. Reverse Voltage
VRRM
Maximum Peak Repetitive Reverse Voltage
VRWM
Maximum Working Peak Reverse Voltage
IF(AV)
Maximum Average Forward current (TC = 115°C, Duty Cycle = 0.5)
50
IF(RMS)
RMS Forward Currrent (Square wave, 50% duty)
150
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3 ms)
320
IFSM
TJ, TSTG
TL
Operating and Storage Junction Temperature Range
Amps
-55 to 175
°C
Lead Temperature for 10 Seconds
300
STATIC ELECTRICAL CHARACTERISTICS
VF
Characteristic / Test Conditions
Forward Voltage
IRM
Maximum Reverse Leakage Current
CT
Junction Capacitance, VR = 200V
Min
Typ
Max
IF = 50A
1.25
1.6
IF = 100A
2.0
IF = 50A, TJ = 125°C
1.25
Volts
VR = 600V
25
VR = 600V, TJ = 125°C
250
μA
51
Microsemi Website - http://www.microsemi.com
Unit
pF
052-6316 Rev B 12 - 2008
Symbol
APT50DL60BCT(G)
DYNAMIC CHARACTERISTICS
Symbol
Characteristic / Test Conditions
trr
Reverse Recovery Time
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Maximum Reverse Recovery Current
trr
Min
Typ
IF = 1A, diF/dt = -100A/μs, VR = 30V, TJ = 25°C
Max
Unit
52
ns
399
IF = 50A, diF/dt = -200A/μs
VR = 400V, TC = 25°C
Reverse Recovery Time
IF = 50A, diF/dt = -200A/μs
VR = 400V, TC = 125°C
1498
nC
9
Amps
449
ns
3734
nC
Qrr
Reverse Recovery Charge
IRRM
Maximum Reverse Recovery Current
15
Amps
trr
Reverse Recovery Time
284
ns
Qrr
Reverse Recovery Charge
5134
nC
IRRM
Maximum Reverse Recovery Current
34
Amps
IF = 50A, diF/dt = -1000A/μs
VR = 400V, TC = 125°C
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
Characteristic / Test Conditions
RθJC
Junction-to-Case Thermal Resistance
WT
Min
Typ
Unit
0.63
°C/W
0.22
oz
5.9
g
Package Weight
Torque
0.7
0.6
0.5
0.4
0.3
Note:
0.2
PDM
ZθJC, THERMAL IMPEDANCE (°C/W)
10
lb·in
1.1
N·m
Maximum Mounting Torque
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
t1
t2
0.1
0
t
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
TC (°C)
0.316
Dissipated Power
(Watts)
0.0046
0.312
0.1483
ZEXT
TJ (°C)
052-6316 Rev B 12 - 2008
Max
ZEXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL
APT50DL60BCT(G)
TYPICAL PERFORMANCE CURVES
700
120
TJ= 125°C
TJ= 55°C
80
TJ= 25°C
60
40
20
0.5
1.0
1.5
2.0
2.5
3.0
VF, ANODE-TO-CATHODE VOLTAGE (V)
FIGURE 2, Forward Current vs. Forward Voltage
8000
100A
R
6000
50A
5000
25A
4000
3000
2000
1000
0
100
T = 125°C
J
V = 400V
40
R
50A
100A
35
30
25A
25
20
15
10
5
0
200
400
600
800
1000
-diF/dt, CURRENT RATE OF CHANGE (A/μs)
FIGURE 5, Reverse Recovery Current vs. Current Rate of Change
140
100
QRR
80
60
40
0.2
20
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 6, Dynamic Parameters vs Junction Temperature
500
0
Duty cycle = 0.5
TJ = 126°C
25
50
75
100
125
150
175
Case Temperature (°C)
FIGURE 7, Maximum Average Forward Current vs. Case Temperature
450
400
350
300
250
200
150
100
50
0
0
10
100
400
VR, REVERSE VOLTAGE (V)
FIGURE 8, Junction Capacitance vs. Reverse Voltage
052-6316 Rev B 12 - 2008
CJ, JUNCTION CAPACITANCE (pF)
200
120
0.4
0
300
0
IRRM
0.6
25A
0
200
400
600
800
1000
-diF/dt, CURRENT RATE OF CHANGE (A/μs)
FIGURE 3, Reverse Recovery Time vs. Current Rate of Change
tRR
0.8
400
0
IF(AV) (A)
Kf, DYNAMIC PARAMETERS
(Normalized to 1000A/μs)
0
200
400
600
800
1000
-diF/dt, CURRENT RATE OF CHANGE (A/μs)
FIGURE 4, Reverse Recovery Charge vs. Current Rate of Change
1.2
1.0
50A
45
T = 125°C
J
V = 400V
7000
500
IRRM, REVERSE RECOVERY CURRENT
(A)
Qrr, REVERSE RECOVERY CHARGE
(nC)
0
R
600
trr, COLLECTOR CURRENT (A)
IF, FORWARD CURRENT (A)
100
0
T = 125°C
J
V = 400V
100A
TJ= 150°C
APT50DL60BCT(G)
Vr
diF /dt Adjust
+18V
0V
D.U.T.
trr/Qrr
Waveform
CURRENT
TRANSFORMER
Figure 9. Diode Test Circuit
1
IF - Forward Conduction Current
2
diF /dt - Rate of Diode Current Change Through Zero Crossing.
3
IRRM - Maximum Reverse Recovery Current.
4
trr - Reverse Recovery Time, measured from zero crossing where diode
current goes from positive to negative, to the point at which the straight
line through IRRM and 0.25 IRRM passes through zero.
1
4
6
Zero
5
5
Qrr - Area Under the Curve Defined by IRRM and trr.
6
diM/dt - Maximum Rate of Current Increase During the Trailing Portion of trr.
3
2
0.25 IRRM
Slope = diM/dt
Figure 10, Diode Reverse Recovery Waveform and Definitions
TO-247 (BCT) Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
Common Cathode
20.80 (.819)
21.46 (.845)
3.55 (.138)
3.81 (.150)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
2.21 (.087)
2.59 (.102)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
052-6316 Rev B 12 - 2008
5.38 (.212)
6.20 (.244)
Anode 1
Common Cathode
Anode 2
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.