APTLGF350A608G VCES = 600V IC = 350A @ Tc = 80°C Phase leg Intelligent Power Module Application • Motor control • Uninterruptible Power Supplies • Switched Mode Power Supplies • Amplifier Features • Non Punch Through (NPT) FAST IGBT - Low voltage drop - Low tail current - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA & SCSOA rated • Integrated Fail Safe IGBT Protection (Driver) - Top Bottom input signals Interlock - Isolated DC/DC Converter 0/VBUS INL INH GND GND VDD VDD VBUS OUT Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Very high noise immunity (common mode rejection > 25kV/µs) • Galvanic Isolation: 3750V for the optocoupler 2500V for the transformer • 5V logic level with Schmitt-trigger Input • Single VDD=5V supply required • Secondary auxiliary power supplies internally generated (15V, -6V) • Optocoupler qualified to AEC-Q100 test quidelines • RoHS compliant These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-7 APTLGF350A608G – Rev 1 February, 2011 • Low stray inductance • M5 power connectors • High level of integration APTLGF350A608G All ratings @ Tj = 25°C unless otherwise specified 1. Inverter Power Module Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage Pulsed Collector Current Maximum Power Dissipation TC = 25°C TC = 80°C TC = 25°C TC = 25°C Max ratings 600 430 350 700 1562 Reverse Bias Safe Operating Area Tj = 125°C 800A@550V IC Continuous Collector Current ICM PD RBSOA Unit V A W Electrical Characteristics Symbol Characteristic Test Conditions ICES Zero Gate Voltage Collector Current VGE = 0V VCE = 600V VCE(sat) Collector Emitter Saturation Voltage VDD = VIN = 5V IC = 400A Min Tj = 25°C Tj = 125°C Tj = 25°C Typ 2 2.2 Tj = 125°C Max 0.5 1.5 2.5 Unit mA V Dynamic Characteristics Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGE = 0V VCE = 25V f = 1MHz Tr Rise Time Tf Fall Time Tr Tf Eon Rise Time Fall Time Turn-on Switching Energy Eoff Turn-off Switching Energy Inductive Switching (25°C) VDD = VIN = 5V VBus = 400V ; IC = 400A Inductive Switching (125°C) VDD = VIN = 5V VBus = 400V IC = 400A Isc Short Circuit data RthJC VDD = VIN = 5V; VBus =360V tp ≤ 10µs ; Tj = 125°C Junction to Case thermal resistance Min Typ 17.2 1.88 1.6 Max nF 25 ns 30 25 45 17.2 ns mJ 14 1800 A 0.08 www.microsemi.com Unit °C/W 2-7 APTLGF350A608G – Rev 1 February, 2011 Symbol Cies Coes Cres APTLGF350A608G Reverse diode ratings and characteristics Symbol Characteristic VRRM IRM IF VF Test Conditions Maximum Reverse Leakage Current VR=600V DC Forward Current trr Reverse Recovery Time Qrr Reverse Recovery Charge Max 100 Tj = 125°C 2000 240 IF = 240A 1.7 IF = 480A 2 IF = 240A VR = 400V di/dt = 800A/µs Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Unit V Tj = 25°C Tc = 80°C Diode Forward Voltage Typ 600 IF = 240A RthJC Min Maximum Peak Repetitive Reverse Voltage A 2.3 V 1.4 70 140 400 2760 Junction to Case Thermal Resistance µA ns nC 0.22 °C/W 2. Driver Absolute maximum ratings Symbol VDD VINi IVDDmax fmax Parameter Max ratings 5.5 5.5 0.35 2 60 Supply Voltage Input signal voltage i=L, H VINi = 0V, i =L & H VDD=5V, VINH = /VINL ; Fout = 60kHz Maximum Switching Frequency Maximum Supply current Unit V A kHz Driver Electrical Characteristics PDD VISOL Characteristic Operating Supply Voltage Maximum Input Voltage Positive Going Threshold Voltage Negative Going Threshold Voltage Input Resistance * Turn On delay time Built in dead time Turn Off delay time Pulse Width Distortion Propagation Delay Difference between any two driver Primary to Secondary Isolation Test Conditions Min 4.5 -0.5 i = L, H Driver + IGBT Driver + IGBT Typ 5 5 3.2 1 1 1100n 600 750 Max 5.5 5.5 Unit V V kΩ ns 300 Td(on) - Td(off) -350 2500 350 ns VRMS * Low impedance guarantees good noise immunity. n Including built in dead time. www.microsemi.com 3-7 APTLGF350A608G – Rev 1 February, 2011 Symbol VDD VINi(max) VINi (th+) VINi(th-) RINi Td(on) DT Td(off) PWD APTLGF350A608G 3. Package characteristics Symbol VISOL TJ TOP TSTG TC Characteristic Torque Mounting torque Wt Package Weight RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Operating Ambient Temperature Storage Temperature Range Operating Case Temperature To heatsink For terminals M5 M5 Min 2500 -40 -40 -40 -40 2 2 Typ Max 150 85 100 100 4.7 4 550 Unit V °C N.m g www.microsemi.com 4-7 APTLGF350A608G – Rev 1 February, 2011 Ra 3,2 4. LP8 Package outline (dimensions in mm) APTLGF350A608G Typical IGBT Performance Curve Breakdown Voltage vs Junction Temp. Output characteristics Collector to Emitter Breakdown Voltage (Normalized) 250µs Pulse Test < 0.5% Duty cycle 600 TJ=25°C TJ=125°C 400 200 VDD = 5V VIN = 5V 1.20 1.10 1.00 0.90 0.80 0 0 1 2 3 25 4 IC, Collector Current (A) Ic, DC Collector Current (A) 100 125 1000 400 300 200 100 800 600 400 200 0 0 25 50 75 100 125 0 150 Current Rise Time vs Collector Current tf, Fall Time (ns) VCE = 400V VDD = 5V VIN = 5V 40 20 200 300 400 500 ICE, Collector to Emitter Current (A) 60 500 600 TJ = 125°C 40 TJ = 25°C 20 Turn-On Energy Loss vs Collector Current Eoff, Turn-off Energy Loss (mJ) VCE = 400V VDD = 5V VIN = 5V TJ=125°C TJ=25°C 8 200 300 400 500 200 300 400 500 ICE, Collector to Emitter Current (A) 600 Turn-Off Energy Loss vs Collector Current 16 0 100 400 VCE = 400V VDD = 5V VIN = 5V 0 100 600 32 24 300 Current Fall Time vs Collector Current TJ=125°C 0 100 200 80 80 60 100 VCE, Collector to Emitter Voltage (V) TC, Case Temperature (°C) tr, Rise Time (ns) 75 Reverse Bias Safe Operating Area DC Collector Current vs Case Temperature 500 Eon, Turn-On Energy Loss (mJ) 50 TJ, Junction Temperature (°C) VCE, Collector to Emitter Voltage (V) 600 ICE, Collector to Emitter Current (A) www.microsemi.com 24 20 VCE = 400V VDD = 5V VIN = 5V TJ = 125°C 16 12 TJ = 25°C 8 4 0 100 200 300 400 500 600 ICE, Collector to Emitter Current (A) 5-7 APTLGF350A608G – Rev 1 February, 2011 Ic, Collector Current (A) 800 APTLGF350A608G Capacitance vs Collector to Emitter Voltage Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) C, Capacitance (pF) 100000 Cies 10000 Coes 1000 Cres 100 0 10 20 30 40 50 70 VCE = 400V D = 50% VDD = 5V VIN = 5V TJ = 125°C TC =75°C 60 50 40 Limited by internal gate drive power dissipation 30 20 Hard switching 10 0 0 100 VCE, Collector to Emitter Voltage (V) 200 300 400 500 IC, Collector Current (A) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.08 0.9 0.06 0.7 0.04 0.5 0.3 0.02 Single Pulse 0.1 0.05 0 0.00001 0.0001 0.001 0.01 0.1 Rectangular Pulse Duration (Seconds) www.microsemi.com 1 10 6-7 APTLGF350A608G – Rev 1 February, 2011 Thermal Impedance (°C/W) 0.1 APTLGF350A608G Typical diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.25 0.9 0.2 0.7 0.15 0.5 0.1 0.3 0.05 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Forward Current vs Forward Voltage Trr vs. Current Rate of Charge 175 trr, Reverse Recovery Time (ns) IF, Forward Current (A) 500 400 TJ=125°C 300 200 100 TJ=25°C 0 0.0 0.5 1.0 1.5 2.0 150 125 120 A 100 240 A 75 50 2.5 0 800 QRR vs. Current Rate Charge TJ=125°C VR=400V 480 A 240 A 120 A 4.0 2.0 0.0 0 800 1600 2400 3200 4000 4800 -diF/dt (A/µs) IRRM vs. Current Rate of Charge 8.0 1600 2400 3200 4000 4800 IRRM, Reverse Recovery Current (A) QRR, Reverse Recovery Charge (µC) VF, Anode to Cathode Voltage (V) 6.0 TJ=125°C VR=400V 480 A -diF/dt (A/µs) 160 TJ=125°C VR=400V 140 480 A 120 100 240 A 80 60 40 20 120 A 0 0 800 1600 2400 3200 4000 4800 -diF/dt (A/µs) Capacitance vs. Reverse Voltage 1600 1200 800 400 0 1 10 100 1000 VR, Reverse Voltage (V) Microsemi reserves the right to change, without notice, the specifications and information contained herein www.microsemi.com 7-7 APTLGF350A608G – Rev 1 February, 2011 C, Capacitance (pF) 2000