NEC UPC3223TB

DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUIT
µPC3223TB
5 V, SILICON MMIC
MEDIUM OUTPUT POWER AMPLIFIER
DESCRIPTION
The µPC3223TB is a silicon monolithic IC designed as IF amplifier for DBS tuners. This IC is manufactured using
our 30 GHz fmax UHS0 (Ultra High Speed Process) silicon bipolar process.
FEATURES
• Wideband response : fu = 3.2 GHz TYP. @ 3 dB bandwidth
• Medium output power : PO (sat) = +12.0 dBm @ f = 1.0 GHz
: PO (sat) = +9.0 dBm @ f = 2.2 GHz
• High linearity
: PO (1 dB) = +6.5 dBm @ f = 1.0 GHz
: PO (1 dB) = +5.0 dBm @ f = 2.2 GHz
• Power gain
: GP = 23.0 dB TYP. @ f = 1.0 GHz
: GP = 23.0 dB TYP. @ f = 2.2 GHz
• Supply voltage
: VCC = 4.5 to 5.5 V
• Port impedance
: input/output 50 Ω
APPLICATION
• IF amplifiers in DBS converters etc.
ORDERING INFORMATION
Part Number
µPC3223TB-E3
Package
6-pin super minimold
Marking
C3J
Supplying Form
• Embossed tape 8 mm wide
• 1, 2, 3 pins face the perforation side of tape
• Qty 3 kpcs/reel
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: µPC3223TB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10491EJ01V0DS (1st edition)
Date Published May 2004 CP(K)
Printed in Japan
 NEC Compound Semiconductor Devices 2004
µPC3223TB
PIN CONNECTIONS
3
2
1
C3J
(Top View)
(Bottom View)
Pin No.
Pin Name
1
INPUT
4
4
3
2
GND
5
5
2
3
GND
6
6
1
4
OUTPUT
5
GND
6
VCC
PRODUCT LINE-UP OF 5 V-BIAS SILICON MMIC MEDIUM OUTPUT AMPLIFIER
(TA = +25°C, f = 1 GHz, VCC = Vout = 5.0 V, ZS = ZL = 50 Ω)
fu
PO(sat)
GP
NF
ICC
(GHz)
(dBm)
(dB)
(dB)
(mA)
µPC2708TB
2.9
+10.0
15
6.5
26
µPC2709TB
2.3
+11.5
23
5.0
25
C1E
µPC2710TB
1.0
+13.5
33
3.5
22
C1F
µPC2776TB
2.7
+8.5
23
6.0
25
C2L
µPC3223TB
3.2
+12.0
23
4.5
19
C3J
Part No.
Package
6-pin super minimold
Remark Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail.
2
Data Sheet PU10491EJ01V0DS
Marking
C1D
µPC3223TB
PIN EXPLANATIONS
PIN
No.
1
Pin Name
INPUT
Voltage (V)
Applied
Pin Voltage
Note
(V)
–
0.96
Function and Applications
Signal input pin.
A internal matching circuit, configured with resistors, enables 50 Ω
connection over a wide band.
A multi-feedback circuits is designed to cancel the deviations of hFE and
resistance.
This pin must be coupled to signal source with capacitor for DC cut.
4
OUTPUT
Voltage as
–
Signal output pin.
The inductor must be attached between VCC and output pins to supply
same as VCC
through
current to the internal output transistors.
external
inductor
6
VCC
4.5 to 5.5
–
Power suplly pin.
Witch biases the internal input transistor. This pin should be externally
equipped with bypass capacitor to minimize its impedance.
2
GND
0
–
Ground pin.
3
This pin should be connected to system ground with minimum
5
inductance. Ground pattern on the board should be formed as wide as
possible.
All the ground pins must be connected together with wide ground pattern
to decrease impedance difference.
Note Pin Voltage is measured at VCC = 5.0 V
Data Sheet PU10491EJ01V0DS
3
µPC3223TB
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Conditions
Ratings
Unit
Supply Voltage
VCC
TA = +25°C, Pin 4 and 6
6.0
V
Total Circuit Current
ICC
TA = +25°C
40
mA
Power Dissipation
PD
TA = +85°C
270
mW
Operating Ambient Temperature
TA
−40 to +85
°C
Storage Temperature
Tstg
−55 to +150
°C
Input Power
Pin
+10
dBm
Note
TA = +25°C
Note Mounted on double-sided copper-clad 50 × 50 × 1.6 mm epoxy glass PWB
RECOMMENDED OPERATING RANGE
Parameter
Supply Voltage
Symbol
VCC
Conditions
The same voltage should be applied
MIN.
TYP.
MAX.
Unit
4.5
5.0
5.5
V
−40
+25
+85
°C
to pin 4 and 6.
Operating Ambient Temperature
TA
ELECTRICAL CHARACTERISTICS (TA = +25°C, VCC = Vout = 5.0 V, ZS = ZL = 50 Ω)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Circuit Current
ICC
No input signal
15.0
19.0
24.0
mA
Power Gain
GP
f = 1.0 GHz, Pin = −30 dBm
20.5
23.0
25.5
dB
f = 2.2 GHz, Pin = −30 dBm
20.0
23.0
26.0
f = 1.0 GHz, Pin = −5 dBm
+9.0
+12.0
−
f = 2.2 GHz, Pin = −5 dBm
+6.0
+9.0
−
f = 1.0 GHz
+4.5
+6.5
−
f = 2.2 GHz
+3.0
+5.0
−
f = 1.0 GHz
−
4.5
6.0
f = 2.2 GHz
−
4.0
5.5
3 dB down below flat gain at f = 0.1 GHz
2.8
3.2
−
GHz
f = 1.0 GHz, Pin = −30 dBm
28.0
33.0
−
dB
f = 2.2 GHz, Pin = −30 dBm
28.0
33.0
−
f = 1.0 GHz, Pin = −30 dBm
9.0
12.0
−
f = 2.2 GHz, Pin = −30 dBm
12.0
17.5
−
f = 1.0 GHz, Pin = −30 dBm
9.0
12.0
−
f = 2.2 GHz, Pin = −30 dBm
9.0
12.0
−
−
±0.9
−
Saturated Output Power
Gain 1 dB Compression Output
PO (sat)
PO (1 dB)
Power
Noise Figure
Upper Limit Operating Frequency
Isolation
Input Return Loss
Output Return Loss
Gain Flatness
4
NF
fu
ISL
RLin
RLout
∆GP
f = 0.1 to 2.2 GHz
Data Sheet PU10491EJ01V0DS
dBm
dBm
dB
dB
dB
dB
µPC3223TB
OTHER CHARACTERISTICS, FOR REFERENCE PURPOSES ONLY
(TA = +25°C, VCC = Vout = 5.0 V, ZS = ZL = 50 Ω)
Parameter
Output Intercept Point
Symbol
OIP3
Test Conditions
Reference Value
Unit
f = 1.0 GHz
+17.8
dBm
f = 2.2 GHz
+14.8
Data Sheet PU10491EJ01V0DS
5
µPC3223TB
TEST CIRCUIT
VCC
C4
1 000 pF
1 000 pF
C3
L
100 nH
6
50 Ω
IN
C1
C2
4
1
50 Ω
OUT
100 pF
100 pF
2, 3, 5
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
COMPONENTS OF TEST CIRCUIT FOR
MEASURING ELECTRICAL CHARACTERISTICS
Type
Value
C1, C2
Chip Capacitor
100 pF
C3
Chip Capacitor
1 000 pF
C4
Feed-through Capacitor
1 000 pF
L
Chip Inductor
100 nH
INDUCTOR FOR THE OUTPUT PIN
The internal output transistor of this IC consumes 20 mA, to output medium power. To supply current for output
transistor, connect an inductor between the VCC pin (pin 6) and output pin (pin 4). Select large value inductance, as
listed above.
The inductor has both DC and AC effects. In terms of DC, the inductor biases the output transistor with minimum
voltage drop to output enable high level. In terms of AC, the inductor makes output-port impedance higher to get
enough gain. In this case, large inductance and Q is suitable.
CAPACITORS FOR THE VCC, INPUT AND OUTPUT PINS
Capacitors of 1000 pF are recommendable as the bypass capacitor for the VCC pin and the coupling capacitors for
the input and output pins.
The bypass capacitor connected to the VCC pin is used to minimize ground impedance of VCC pin. So, stable bias
can be supplied against VCC fluctuation.
The coupling capacitors, connected to the input and output pins, are used to cut the DC and minimize RF serial
impedance. Their capacitances are therefore selected as lower impedance against a 50 Ω load. The capacitors thus
perform as high pass filters, suppressing low frequencies to DC.
To obtain a flat gain from 100 MHz upwards, 1 000 pF capacitors are used in the test circuit. In the case of under
10 MHz operation, increase the value of coupling capacitor such as 10 000 pF. Because the coupling capacitors are
determined by equation, C = 1/(2 πRfc).
6
Data Sheet PU10491EJ01V0DS
µPC3223TB
ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD
IN
C1
C2
OUT
L
C3
C4
COMPONENT LIST
Value
1.
30 × 30 × 0.4 mm double sided copper clad polyimide board.
2.
Back side: GND pattern
1 000 pF
3.
Solder plated on pattern
100 nH
4.
: Through holes
C1, C2
100 pF
C3, C4
L
Notes
Data Sheet PU10491EJ01V0DS
7
µPC3223TB
TYPICAL CHARACTERISTICS (TA = +25°C , unless otherwise specified)
CIRCUIT CURRENT vs.
OPERATING AMBIENT TEMPERATURE
CIRCUIT CURRENT vs. SUPPLY VOLTAGE
30
21
No input signal
20
Circuit Current ICC (mA)
Circuit Current ICC (mA)
25
TA = +85˚C
20
15
TA = +25˚C
10
TA = − 40˚C
5
0
No input signal
VCC = 5.0 V
0
1
2
3
4
5
19
18
17
16
15
− 60 − 40 − 20
6
Supply Voltage VCC (V)
Input Return Loss RLin (dB)
Power Gain GP (dB)
VCC = 5.5 V
VCC = 5.0 V
VCC = 4.5 V
17
15
0.1
10
TA = +25˚C
19
1.1
2.1
3.1
4.1
TA = +25˚C
0
VCC = 4.5 V
− 10
− 20
VCC = 5.0 V
VCC = 5.5 V
− 30
VCC = 5.0 to 5.5 V
− 40
0.1
5.1
1.1
Frequency f (GHz)
10
Output Return Loss RLout (dB)
Isolation ISL (dB)
− 10
− 20
VCC = 4.5 to 5.5 V
− 40
− 50
0.1
1.1
2.1
3.1
4.1
5.1
4.1
5.1
TA = +25˚C
0
− 10
VCC = 4.5 V
− 20
VCC = 5.0 V
− 30
− 40
0.1
Frequency f (GHz)
VCC = 5.5 V
1.1
2.1
3.1
Frequency f (GHz)
Remark The graphs indicate nominal characteristics.
8
3.1
OUTPUT RETURN LOSS vs. FREQUENCY
TA = +25˚C
− 30
2.1
Frequency f (GHz)
ISOLATION vs. FREQUENCY
0
+60 +80 +100
INPUT RETURN LOSS vs. FREQUENCY
23
21
+20 +40
Operating Ambient Temperature TA (°C)
POWER GAIN vs. FREQUENCY
25
0
Data Sheet PU10491EJ01V0DS
4.1
5.1
µPC3223TB
INPUT RETURN LOSS vs. FREQUENCY
POWER GAIN vs. FREQUENCY
25
10
VCC = 5.0 V
Input Return Loss RLin (dB)
VCC = 5.0 V
Power Gain GP (dB)
23
TA = − 40˚C
21
19
TA = +85˚C
17
0
TA = +85˚C
− 10
− 20
TA = − 40˚C
− 30
TA = +25˚C
TA = +25˚C
15
0.1
1.1
3.1
2.1
4.1
− 40
0.1
5.1
1.1
ISOLATION vs. FREQUENCY
10
Output Return Loss RLout (dB)
Isolation ISL (dB)
− 10
− 20
TA = − 40 to +85˚C
− 40
− 50
0.1
1.1
2.1
3.1
4.1
5.1
OUTPUT RETURN LOSS vs. FREQUENCY
VCC = 5.0 V
− 30
3.1
Frequency f (GHz)
Frequency f (GHz)
0
2.1
4.1
5.1
VCC = 5.0 V
0
− 10
− 20
TA = − 40 to +85˚C
− 30
− 40
0.1
Frequency f (GHz)
1.1
2.1
3.1
4.1
5.1
Frequency f (GHz)
Remark The graphs indicate nominal characteristics.
Data Sheet PU10491EJ01V0DS
9
µPC3223TB
OUTPUT POWER vs. INPUT POWER
15
15
f = 1.0 GHz
TA = +25˚C
10
VCC = 5.5 V
5
Output Power Pout (dBm)
10
Output Power Pout (dBm)
OUTPUT POWER vs. INPUT POWER
VCC = 5.0 V
VCC = 4.5 V
0
−5
− 10
− 15
− 20
− 40 − 35 − 30 − 25 − 20 − 15 − 10 − 5
0
5
5
0
− 10
− 15
− 20
− 40 − 35 − 30 − 25 − 20 − 15 − 10 − 5
10
VCC = 4.5 V
−5
− 10
− 15
− 20
− 40 − 35 − 30 − 25 − 20 − 15 − 10 − 5
Output Power (2 tones) Pout (dBm)
3rd Order Intermodulation Distortion IM3 (dBm)
Output Power Pout (dBm)
VCC = 5.0 V
0
5
5
0
−5
− 10
− 15
0
5
Input Power Pin (dBm)
Input Power Pin (dBm)
OUTPUT POWER (2 tones), IM3
vs. INPUT POWER
OUTPUT POWER (2 tones), IM3
vs. INPUT POWER
20
Pout
0
VCC = 5.5 V
5.0 V
4.5 V
− 10
− 20
IM3
− 30
VCC = 4.5 V
VCC = 5.0 V
− 60
VCC = 5.5 V
− 70
− 40 − 35 − 30 − 25 − 20 − 15 − 10 − 5
0
5
10
10
20
f1 = 2 200 MHz
10 f2 = 2 201 MHz
Pout
VCC = 5.5 V
5.0 V
4.5 V
0
− 10
− 20
IM3
− 30
− 40
VCC = 4.5 to 5.5 V
− 50
− 60
− 70
− 40 − 35 − 30 − 25 − 20 − 15 − 10 − 5
Input Power Pin (dBm)
Input Power Pin (dBm)
Remark The graphs indicate nominal characteristics.
10
TA = − 40 to +85˚C
− 25
− 40 − 35 − 30 − 25 − 20 − 15 − 10 − 5
10
Output Power (2 tones) Pout (dBm)
3rd Order Intermodulation Distortion IM3 (dBm)
Output Power Pout (dBm)
f = 2.2 GHz
10 VCC = 5.0 V
0
f1 = 1 000 MHz
10 f2 = 1 001 MHz
10
OUTPUT POWER vs. INPUT POWER
f = 2.2 GHz
TA = +25˚C
VCC = 5.5 V
− 50
5
15
5
− 40
0
Input Power Pin (dBm)
OUTPUT POWER vs. INPUT POWER
10
TA = − 40 to +85˚C
−5
Input Power Pin (dBm)
15
f = 1.0 GHz
VCC = 5.0 V
Data Sheet PU10491EJ01V0DS
0
5
10
µPC3223TB
S-PARAMETERS (TA = +25°C, VCC = Vout = 5.0 V)
S11−FREQUENCY
1.0 GHz
2.2 GHz
S22−FREQUENCY
1.0 GHz
2.2 GHz
Data Sheet PU10491EJ01V0DS
11
µPC3223TB
PACKAGE DIMENSIONS
6-PIN SUPER MINIMOLD (UNIT: mm)
2.1±0.1
0.2+0.1
–0.05
0.65
0.65
1.3
2.0±0.2
1.25±0.1
12
Data Sheet PU10491EJ01V0DS
0.15+0.1
–0.05
0 to 0.1
0.7
0.9±0.1
0.1 MIN.
µPC3223TB
NOTES ON CORRECT USE
(1) Observe precautions for handling because of electro-static sensitive devices.
(2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation).
All the ground pins must be connected together with wide ground pattern to decrease impedance difference.
(3) The bypass capacitor should be attached to VCC line.
(4) The inductor must be attached between VCC and output pins. The inductance value should be determined in
accordance with desired frequency.
(5) The DC cut capacitor must be each attached to input and output pin.
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions.
For soldering
methods and conditions other than those recommended below, contact your nearby sales office.
Soldering Method
Infrared Reflow
Wave Soldering
Soldering Conditions
Condition Symbol
Peak temperature (package surface temperature)
: 260°C or below
Time at peak temperature
: 10 seconds or less
Time at temperature of 220°C or higher
: 60 seconds or less
Preheating time at 120 to 180°C
: 120±30 seconds
Maximum number of reflow processes
: 3 times
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
Peak temperature (molten solder temperature)
: 260°C or below
Time at peak temperature
: 10 seconds or less
IR260
WS260
Preheating temperature (package surface temperature) : 120°C or below
Partial Heating
Maximum number of flow processes
: 1 time
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
Peak temperature (pin temperature)
: 350°C or below
Soldering time (per side of device)
: 3 seconds or less
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
HS350
Caution Do not use different soldering methods together (except for partial heating).
Data Sheet PU10491EJ01V0DS
13
µPC3223TB
• The information in this document is current as of May, 2004. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
• NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
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responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
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agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
• NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
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The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
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to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.
and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4 - 0110
14
Data Sheet PU10491EJ01V0DS
µPC3223TB
For further information, please contact
NEC Compound Semiconductor Devices, Ltd.
http://www.ncsd.necel.com/
E-mail: [email protected] (sales and general)
[email protected] (technical)
5th Sales Group, Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579
NEC Compound Semiconductor Devices Hong Kong Limited
E-mail: [email protected] (sales, technical and general)
FAX: +852-3107-7309
TEL: +852-3107-7303
Hong Kong Head Office
TEL: +886-2-8712-0478 FAX: +886-2-2545-3859
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FAX: +82-2-558-5209
TEL: +82-2-558-2120
Korea Branch Office
NEC Electronics (Europe) GmbH
http://www.ee.nec.de/
TEL: +49-211-6503-0 FAX: +49-211-6503-1327
California Eastern Laboratories, Inc.
http://www.cel.com/
TEL: +1-408-988-3500 FAX: +1-408-988-0279
0401