DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC3223TB 5 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The µPC3223TB is a silicon monolithic IC designed as IF amplifier for DBS tuners. This IC is manufactured using our 30 GHz fmax UHS0 (Ultra High Speed Process) silicon bipolar process. FEATURES • Wideband response : fu = 3.2 GHz TYP. @ 3 dB bandwidth • Medium output power : PO (sat) = +12.0 dBm @ f = 1.0 GHz : PO (sat) = +9.0 dBm @ f = 2.2 GHz • High linearity : PO (1 dB) = +6.5 dBm @ f = 1.0 GHz : PO (1 dB) = +5.0 dBm @ f = 2.2 GHz • Power gain : GP = 23.0 dB TYP. @ f = 1.0 GHz : GP = 23.0 dB TYP. @ f = 2.2 GHz • Supply voltage : VCC = 4.5 to 5.5 V • Port impedance : input/output 50 Ω APPLICATION • IF amplifiers in DBS converters etc. ORDERING INFORMATION Part Number µPC3223TB-E3 Package 6-pin super minimold Marking C3J Supplying Form • Embossed tape 8 mm wide • 1, 2, 3 pins face the perforation side of tape • Qty 3 kpcs/reel Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: µPC3223TB Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. Document No. PU10491EJ01V0DS (1st edition) Date Published May 2004 CP(K) Printed in Japan NEC Compound Semiconductor Devices 2004 µPC3223TB PIN CONNECTIONS 3 2 1 C3J (Top View) (Bottom View) Pin No. Pin Name 1 INPUT 4 4 3 2 GND 5 5 2 3 GND 6 6 1 4 OUTPUT 5 GND 6 VCC PRODUCT LINE-UP OF 5 V-BIAS SILICON MMIC MEDIUM OUTPUT AMPLIFIER (TA = +25°C, f = 1 GHz, VCC = Vout = 5.0 V, ZS = ZL = 50 Ω) fu PO(sat) GP NF ICC (GHz) (dBm) (dB) (dB) (mA) µPC2708TB 2.9 +10.0 15 6.5 26 µPC2709TB 2.3 +11.5 23 5.0 25 C1E µPC2710TB 1.0 +13.5 33 3.5 22 C1F µPC2776TB 2.7 +8.5 23 6.0 25 C2L µPC3223TB 3.2 +12.0 23 4.5 19 C3J Part No. Package 6-pin super minimold Remark Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail. 2 Data Sheet PU10491EJ01V0DS Marking C1D µPC3223TB PIN EXPLANATIONS PIN No. 1 Pin Name INPUT Voltage (V) Applied Pin Voltage Note (V) – 0.96 Function and Applications Signal input pin. A internal matching circuit, configured with resistors, enables 50 Ω connection over a wide band. A multi-feedback circuits is designed to cancel the deviations of hFE and resistance. This pin must be coupled to signal source with capacitor for DC cut. 4 OUTPUT Voltage as – Signal output pin. The inductor must be attached between VCC and output pins to supply same as VCC through current to the internal output transistors. external inductor 6 VCC 4.5 to 5.5 – Power suplly pin. Witch biases the internal input transistor. This pin should be externally equipped with bypass capacitor to minimize its impedance. 2 GND 0 – Ground pin. 3 This pin should be connected to system ground with minimum 5 inductance. Ground pattern on the board should be formed as wide as possible. All the ground pins must be connected together with wide ground pattern to decrease impedance difference. Note Pin Voltage is measured at VCC = 5.0 V Data Sheet PU10491EJ01V0DS 3 µPC3223TB ABSOLUTE MAXIMUM RATINGS Parameter Symbol Conditions Ratings Unit Supply Voltage VCC TA = +25°C, Pin 4 and 6 6.0 V Total Circuit Current ICC TA = +25°C 40 mA Power Dissipation PD TA = +85°C 270 mW Operating Ambient Temperature TA −40 to +85 °C Storage Temperature Tstg −55 to +150 °C Input Power Pin +10 dBm Note TA = +25°C Note Mounted on double-sided copper-clad 50 × 50 × 1.6 mm epoxy glass PWB RECOMMENDED OPERATING RANGE Parameter Supply Voltage Symbol VCC Conditions The same voltage should be applied MIN. TYP. MAX. Unit 4.5 5.0 5.5 V −40 +25 +85 °C to pin 4 and 6. Operating Ambient Temperature TA ELECTRICAL CHARACTERISTICS (TA = +25°C, VCC = Vout = 5.0 V, ZS = ZL = 50 Ω) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Circuit Current ICC No input signal 15.0 19.0 24.0 mA Power Gain GP f = 1.0 GHz, Pin = −30 dBm 20.5 23.0 25.5 dB f = 2.2 GHz, Pin = −30 dBm 20.0 23.0 26.0 f = 1.0 GHz, Pin = −5 dBm +9.0 +12.0 − f = 2.2 GHz, Pin = −5 dBm +6.0 +9.0 − f = 1.0 GHz +4.5 +6.5 − f = 2.2 GHz +3.0 +5.0 − f = 1.0 GHz − 4.5 6.0 f = 2.2 GHz − 4.0 5.5 3 dB down below flat gain at f = 0.1 GHz 2.8 3.2 − GHz f = 1.0 GHz, Pin = −30 dBm 28.0 33.0 − dB f = 2.2 GHz, Pin = −30 dBm 28.0 33.0 − f = 1.0 GHz, Pin = −30 dBm 9.0 12.0 − f = 2.2 GHz, Pin = −30 dBm 12.0 17.5 − f = 1.0 GHz, Pin = −30 dBm 9.0 12.0 − f = 2.2 GHz, Pin = −30 dBm 9.0 12.0 − − ±0.9 − Saturated Output Power Gain 1 dB Compression Output PO (sat) PO (1 dB) Power Noise Figure Upper Limit Operating Frequency Isolation Input Return Loss Output Return Loss Gain Flatness 4 NF fu ISL RLin RLout ∆GP f = 0.1 to 2.2 GHz Data Sheet PU10491EJ01V0DS dBm dBm dB dB dB dB µPC3223TB OTHER CHARACTERISTICS, FOR REFERENCE PURPOSES ONLY (TA = +25°C, VCC = Vout = 5.0 V, ZS = ZL = 50 Ω) Parameter Output Intercept Point Symbol OIP3 Test Conditions Reference Value Unit f = 1.0 GHz +17.8 dBm f = 2.2 GHz +14.8 Data Sheet PU10491EJ01V0DS 5 µPC3223TB TEST CIRCUIT VCC C4 1 000 pF 1 000 pF C3 L 100 nH 6 50 Ω IN C1 C2 4 1 50 Ω OUT 100 pF 100 pF 2, 3, 5 The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS Type Value C1, C2 Chip Capacitor 100 pF C3 Chip Capacitor 1 000 pF C4 Feed-through Capacitor 1 000 pF L Chip Inductor 100 nH INDUCTOR FOR THE OUTPUT PIN The internal output transistor of this IC consumes 20 mA, to output medium power. To supply current for output transistor, connect an inductor between the VCC pin (pin 6) and output pin (pin 4). Select large value inductance, as listed above. The inductor has both DC and AC effects. In terms of DC, the inductor biases the output transistor with minimum voltage drop to output enable high level. In terms of AC, the inductor makes output-port impedance higher to get enough gain. In this case, large inductance and Q is suitable. CAPACITORS FOR THE VCC, INPUT AND OUTPUT PINS Capacitors of 1000 pF are recommendable as the bypass capacitor for the VCC pin and the coupling capacitors for the input and output pins. The bypass capacitor connected to the VCC pin is used to minimize ground impedance of VCC pin. So, stable bias can be supplied against VCC fluctuation. The coupling capacitors, connected to the input and output pins, are used to cut the DC and minimize RF serial impedance. Their capacitances are therefore selected as lower impedance against a 50 Ω load. The capacitors thus perform as high pass filters, suppressing low frequencies to DC. To obtain a flat gain from 100 MHz upwards, 1 000 pF capacitors are used in the test circuit. In the case of under 10 MHz operation, increase the value of coupling capacitor such as 10 000 pF. Because the coupling capacitors are determined by equation, C = 1/(2 πRfc). 6 Data Sheet PU10491EJ01V0DS µPC3223TB ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD IN C1 C2 OUT L C3 C4 COMPONENT LIST Value 1. 30 × 30 × 0.4 mm double sided copper clad polyimide board. 2. Back side: GND pattern 1 000 pF 3. Solder plated on pattern 100 nH 4. : Through holes C1, C2 100 pF C3, C4 L Notes Data Sheet PU10491EJ01V0DS 7 µPC3223TB TYPICAL CHARACTERISTICS (TA = +25°C , unless otherwise specified) CIRCUIT CURRENT vs. OPERATING AMBIENT TEMPERATURE CIRCUIT CURRENT vs. SUPPLY VOLTAGE 30 21 No input signal 20 Circuit Current ICC (mA) Circuit Current ICC (mA) 25 TA = +85˚C 20 15 TA = +25˚C 10 TA = − 40˚C 5 0 No input signal VCC = 5.0 V 0 1 2 3 4 5 19 18 17 16 15 − 60 − 40 − 20 6 Supply Voltage VCC (V) Input Return Loss RLin (dB) Power Gain GP (dB) VCC = 5.5 V VCC = 5.0 V VCC = 4.5 V 17 15 0.1 10 TA = +25˚C 19 1.1 2.1 3.1 4.1 TA = +25˚C 0 VCC = 4.5 V − 10 − 20 VCC = 5.0 V VCC = 5.5 V − 30 VCC = 5.0 to 5.5 V − 40 0.1 5.1 1.1 Frequency f (GHz) 10 Output Return Loss RLout (dB) Isolation ISL (dB) − 10 − 20 VCC = 4.5 to 5.5 V − 40 − 50 0.1 1.1 2.1 3.1 4.1 5.1 4.1 5.1 TA = +25˚C 0 − 10 VCC = 4.5 V − 20 VCC = 5.0 V − 30 − 40 0.1 Frequency f (GHz) VCC = 5.5 V 1.1 2.1 3.1 Frequency f (GHz) Remark The graphs indicate nominal characteristics. 8 3.1 OUTPUT RETURN LOSS vs. FREQUENCY TA = +25˚C − 30 2.1 Frequency f (GHz) ISOLATION vs. FREQUENCY 0 +60 +80 +100 INPUT RETURN LOSS vs. FREQUENCY 23 21 +20 +40 Operating Ambient Temperature TA (°C) POWER GAIN vs. FREQUENCY 25 0 Data Sheet PU10491EJ01V0DS 4.1 5.1 µPC3223TB INPUT RETURN LOSS vs. FREQUENCY POWER GAIN vs. FREQUENCY 25 10 VCC = 5.0 V Input Return Loss RLin (dB) VCC = 5.0 V Power Gain GP (dB) 23 TA = − 40˚C 21 19 TA = +85˚C 17 0 TA = +85˚C − 10 − 20 TA = − 40˚C − 30 TA = +25˚C TA = +25˚C 15 0.1 1.1 3.1 2.1 4.1 − 40 0.1 5.1 1.1 ISOLATION vs. FREQUENCY 10 Output Return Loss RLout (dB) Isolation ISL (dB) − 10 − 20 TA = − 40 to +85˚C − 40 − 50 0.1 1.1 2.1 3.1 4.1 5.1 OUTPUT RETURN LOSS vs. FREQUENCY VCC = 5.0 V − 30 3.1 Frequency f (GHz) Frequency f (GHz) 0 2.1 4.1 5.1 VCC = 5.0 V 0 − 10 − 20 TA = − 40 to +85˚C − 30 − 40 0.1 Frequency f (GHz) 1.1 2.1 3.1 4.1 5.1 Frequency f (GHz) Remark The graphs indicate nominal characteristics. Data Sheet PU10491EJ01V0DS 9 µPC3223TB OUTPUT POWER vs. INPUT POWER 15 15 f = 1.0 GHz TA = +25˚C 10 VCC = 5.5 V 5 Output Power Pout (dBm) 10 Output Power Pout (dBm) OUTPUT POWER vs. INPUT POWER VCC = 5.0 V VCC = 4.5 V 0 −5 − 10 − 15 − 20 − 40 − 35 − 30 − 25 − 20 − 15 − 10 − 5 0 5 5 0 − 10 − 15 − 20 − 40 − 35 − 30 − 25 − 20 − 15 − 10 − 5 10 VCC = 4.5 V −5 − 10 − 15 − 20 − 40 − 35 − 30 − 25 − 20 − 15 − 10 − 5 Output Power (2 tones) Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Output Power Pout (dBm) VCC = 5.0 V 0 5 5 0 −5 − 10 − 15 0 5 Input Power Pin (dBm) Input Power Pin (dBm) OUTPUT POWER (2 tones), IM3 vs. INPUT POWER OUTPUT POWER (2 tones), IM3 vs. INPUT POWER 20 Pout 0 VCC = 5.5 V 5.0 V 4.5 V − 10 − 20 IM3 − 30 VCC = 4.5 V VCC = 5.0 V − 60 VCC = 5.5 V − 70 − 40 − 35 − 30 − 25 − 20 − 15 − 10 − 5 0 5 10 10 20 f1 = 2 200 MHz 10 f2 = 2 201 MHz Pout VCC = 5.5 V 5.0 V 4.5 V 0 − 10 − 20 IM3 − 30 − 40 VCC = 4.5 to 5.5 V − 50 − 60 − 70 − 40 − 35 − 30 − 25 − 20 − 15 − 10 − 5 Input Power Pin (dBm) Input Power Pin (dBm) Remark The graphs indicate nominal characteristics. 10 TA = − 40 to +85˚C − 25 − 40 − 35 − 30 − 25 − 20 − 15 − 10 − 5 10 Output Power (2 tones) Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Output Power Pout (dBm) f = 2.2 GHz 10 VCC = 5.0 V 0 f1 = 1 000 MHz 10 f2 = 1 001 MHz 10 OUTPUT POWER vs. INPUT POWER f = 2.2 GHz TA = +25˚C VCC = 5.5 V − 50 5 15 5 − 40 0 Input Power Pin (dBm) OUTPUT POWER vs. INPUT POWER 10 TA = − 40 to +85˚C −5 Input Power Pin (dBm) 15 f = 1.0 GHz VCC = 5.0 V Data Sheet PU10491EJ01V0DS 0 5 10 µPC3223TB S-PARAMETERS (TA = +25°C, VCC = Vout = 5.0 V) S11−FREQUENCY 1.0 GHz 2.2 GHz S22−FREQUENCY 1.0 GHz 2.2 GHz Data Sheet PU10491EJ01V0DS 11 µPC3223TB PACKAGE DIMENSIONS 6-PIN SUPER MINIMOLD (UNIT: mm) 2.1±0.1 0.2+0.1 –0.05 0.65 0.65 1.3 2.0±0.2 1.25±0.1 12 Data Sheet PU10491EJ01V0DS 0.15+0.1 –0.05 0 to 0.1 0.7 0.9±0.1 0.1 MIN. µPC3223TB NOTES ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation). All the ground pins must be connected together with wide ground pattern to decrease impedance difference. (3) The bypass capacitor should be attached to VCC line. (4) The inductor must be attached between VCC and output pins. The inductance value should be determined in accordance with desired frequency. (5) The DC cut capacitor must be each attached to input and output pin. RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Infrared Reflow Wave Soldering Soldering Conditions Condition Symbol Peak temperature (package surface temperature) : 260°C or below Time at peak temperature : 10 seconds or less Time at temperature of 220°C or higher : 60 seconds or less Preheating time at 120 to 180°C : 120±30 seconds Maximum number of reflow processes : 3 times Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below Peak temperature (molten solder temperature) : 260°C or below Time at peak temperature : 10 seconds or less IR260 WS260 Preheating temperature (package surface temperature) : 120°C or below Partial Heating Maximum number of flow processes : 1 time Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below Peak temperature (pin temperature) : 350°C or below Soldering time (per side of device) : 3 seconds or less Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below HS350 Caution Do not use different soldering methods together (except for partial heating). Data Sheet PU10491EJ01V0DS 13 µPC3223TB • The information in this document is current as of May, 2004. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. • NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. 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M8E 00. 4 - 0110 14 Data Sheet PU10491EJ01V0DS µPC3223TB For further information, please contact NEC Compound Semiconductor Devices, Ltd. http://www.ncsd.necel.com/ E-mail: [email protected] (sales and general) [email protected] (technical) 5th Sales Group, Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579 NEC Compound Semiconductor Devices Hong Kong Limited E-mail: [email protected] (sales, technical and general) FAX: +852-3107-7309 TEL: +852-3107-7303 Hong Kong Head Office TEL: +886-2-8712-0478 FAX: +886-2-2545-3859 Taipei Branch Office FAX: +82-2-558-5209 TEL: +82-2-558-2120 Korea Branch Office NEC Electronics (Europe) GmbH http://www.ee.nec.de/ TEL: +49-211-6503-0 FAX: +49-211-6503-1327 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 0401