BIPOLAR ANALOG INTEGRATED CIRCUIT µPC8182TB 3 V, 2.9 GHz SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The µPC8182TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC operates at 3 V. The medium output power is suitable for RF-TX of mobile communications system. This IC is manufactured using our 30 GHz fmax UHS0 (Ultra High Speed Process) silicon bipolar process. This process uses direct silicon nitride passivation film and gold electrodes. These materials can protect the chip surface from pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability. FEATURES • Supply voltage: VCC = 2.7 to 3.3 V • Circuit current: ICC = 30 mA TYP. @ VCC = 3.0 V • Medium output power: PO (1dB) = +9.5 dBm TYP. @ f = 0.9 GHz PO (1dB) = +9.0 dBm TYP. @ f = 1.9 GHz PO (1dB) = +8.0 dBm TYP. @ f = 2.4 GHz • Power gain: GP = 21.5 dB TYP. @ f = 0.9 GHz GP = 20.5 dB TYP. @ f = 1.9 GHz GP = 20.5 dB TYP. @ f = 2.4 GHz • Upper limit operating frequency: fu = 2.9 GHz TYP. @ 3 dB bandwidth • High-density surface mounting: 6-pin super minimold package (2.0 × 1.25 × 0.9 mm) APPLICAION • Buffer amplifiers on 1.9 to 2.4 GHz mobile communications system ORDERING INFORMATION (Solder Contains Lead) Part Number µ PC8182TB-E3 Package 6-pin super minimold Marking C3F Supplying Form • Embossed tape 8 mm wide • Pin 1, 2, 3 face the perforation side of the tape • Qty 3 kpcs/reel Remark To order evaluation samples, contact you’re nearby sales office. Part number for sample order: µPC8182TB ORDERING INFORMATION (Pb-Free) Part Number Package Marking µ PC8182TB-E3-AZ* 6-pin super minimold C3F Supplying Form • Embossed tape 8 mm wide • Pin 1, 2, 3 face the perforation side of the tape • Qty 3 kpcs/reel *NOTE: Please refer to the last page of this data sheet, “Compliance with EU Directives” for Pb-Free RoHS Compliance Information. Document No. PU10206EJ01V0DS (1st edition) (Previous No. P14543EJ2V0DS00) Date Published December 2002 CP (K) © NEC Compound Semiconductor Devices 1999, 2002 µPC8182TB PIN CONNECTIONS (Bottom View) C3F (Top View) 3 2 1 4 4 3 5 5 2 6 6 1 Pin No. Pin Name 1 INPUT 2 GND 3 GND 4 OUTPUT 5 GND 6 VCC PRODUCT LINE-UP (TA = +25°C, VCC = Vout = 3.0 V, ZS = ZL = 50 Ω) Part No. µPC8182TB µPC2762T fu PO (1 dB) GP ICC (GHz) (dBm) (dB) (mA) 2.9 2.9 µPC2762TB µPC2763T 2.7 µPC2763TB µPC2771T 2.2 µPC2771TB µPC8181TB 4.0 +9.5 @ f = 0.9 GHz 21.5 @ f = 0.9 GHz +9.0 @ f = 1.9 GHz 20.5 @ f = 1.9 GHz +8.0 @ f = 2.4 GHz 20.5 @ f = 2.4 GHz +8.0 @ f = 0.9 GHz 13.0 @ f = 0.9 GHz +7.0 @ f = 1.9 GHz 15.5 @ f = 1.9 GHz +9.5 @ f = 0.9 GHz 20.0 @ f = 0.9 GHz +6.5 @ f = 1.9 GHz 21.0 @ f = 1.9 GHz +11.5 @ f = 0.9 GHz 21.0 @ f = 0.9 GHz +9.5 @ f = 1.5 GHz 21.0 @ f = 1.5 GHz +8.0 @ f = 0.9 GHz 19.0 @ f = 0.9 GHz +7.0 @ f = 1.9 GHz 21.0 @ f = 1.9 GHz +7.0 @ f = 2.4 GHz 22.0 @ f = 2.4 GHz Package 30.0 6-pin super minimold C3F 26.5 6-pin minimold C1Z 6-pin super minimold 27.0 6-pin minimold 36.0 6-pin minimold C2H 6-pin super minimold 23.0 6-pin super minimold Caution The package size distinguishes between minimold and super minimold. Data Sheet PU10206EJ01V0DS C2A 6-pin super minimold Remark Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail. 2 Marking C3E µPC8182TB SYSTEM APPLICATION EXAMPLE Digital cellular telephone RX DEMOD. I Q ÷N PLL SW PLL I 0˚ Phase shifter TX PA : µ PC8182TB applicable 90˚ Q Caution The insertion point is different due to the specifications of conjunct devices. Data Sheet PU10206EJ01V0DS 3 µPC8182TB PIN EXPLANATION Pin No. Pin Name Applied Pin Voltage Voltage (V) 1 INPUT – (V) Function and Applications Internal Equivalent Circuit Note 0.99 Signal input pin. A internal matching circuit, configured with resistors, enables 50 Ω connection over a wide band. A multi-feedback circuit is designed to cancel the deviations of hFE and resistance. 6 This pin must be coupled to signal source with capacitor for DC cut. 4 OUTPUT Voltage – Signal output pin. The inductor as same as must be attached between VCC VCC through and output pins to supply current external to the internal output transistors. 1 inductor 6 VCC 2.7 to 3.3 4 – Power supply pin, which biases the internal input transistor. This pin should be externally equipped with bypass capacitor to minimize its impedance. 2 GND 0 – Ground pin. This pin should be 3 connected to system ground with 5 minimum inductance. Ground pattern on the board should be formed as wide as possible. All the ground pins must be connected together with wide ground pattern to decrease impedance difference. Note Pin voltage is measured at VCC = 3.0 V. 4 Data Sheet PU10206EJ01V0DS 3 GND 2 5 GND µPC8182TB ABSOLUTE MAXIMUM RATINGS Parameter Symbol Test Conditions Ratings Unit Supply Voltage VCC TA = +25°C, pin 4 and pin 6 3.6 V Total Circuit Current ICC TA = +25°C 60 mA Power Dissipation PD TA = +85°C 270 mW Operating Ambient Temperature TA −40 to +85 °C Storage Temperature Tstg −55 to +150 °C Input Power Pin +10 dBm Note TA = +25°C Note Mounted on double-sided copper-clad 50 × 50 × 1.6 mm epoxy glass PWB RECOMMENDED OPERATING RANGE Parameter Supply Voltage Symbol MIN. TYP. MAX. Unit VCC 2.7 3.0 3.3 V Remarks Same voltage should be applied to pin 4 and pin 6. Operating Ambient Temperature TA −40 +25 +85 Data Sheet PU10206EJ01V0DS °C − 5 µPC8182TB ELECTRICAL CHARACTERISTICS (TA = +25°C, VCC = Vout = 3.0 V, ZS = ZL = 50 Ω, unless otherwise specified) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit − 30.0 38.0 mA dB Circuit Current ICC No signal Power Gain GP f = 0.9 GHz 19.0 21.5 25.0 f = 1.9 GHz 18.0 20.5 24.0 f = 2.4 GHz 18.0 20.5 24.0 f = 0.9 GHz − 4.5 6.0 f = 1.9 GHz − 4.5 6.0 f = 2.4 GHz − 5.0 6.5 3 dB down below from gain at f = 0.1 GHz 2.6 2.9 − GHz f = 0.9 GHz 28 33 − dB f = 1.9 GHz 27 32 − f = 2.4 GHz 26 31 − f = 0.9 GHz 5 8 − f = 1.9 GHz 7 10 − f = 2.4 GHz 9 12 − f = 0.9 GHz 7 10 − f = 1.9 GHz 8 11 − f = 2.4 GHz 11 14 − f = 0.9 GHz +7.0 +9.5 − f = 1.9 GHz +6.5 +9.0 − f = 2.4 GHz +5.5 +8.0 − f = 0.9 GHz, Pin = −5 dBm − +11.0 − f = 1.9 GHz, Pin = −5 dBm − +10.5 − f = 2.4 GHz, Pin = −5 dBm − +10.0 − Noise Figure Upper Limit Operating Frequency Isolation Input Return Loss Output Return Loss Gain 1 dB Compression Output NF fu ISL RLin RLout PO(1dB) Power Saturated Output Power 6 PO(sat) Data Sheet PU10206EJ01V0DS dB dB dB dBm dBm µPC8182TB TEST CIRCUITS VCC 1 000 pF C3 L 6 50 Ω C1 IN C2 4 1 50 Ω OUT 1 000 pF 1 000 pF 2, 3, 5 COMPONENTS OF TEST CIRCUIT EXAMPLE OF ACTUAL APPLICATION COMPONENTS FOR MEASURING ELECTRICAL CHARACTERISTICS Type Value C1, C2 Bias Tee 1 000 pF C3 Capacitor 1 000 pF L Bias Tee 1 000 nH Type Value Operating Frequency C1 to C3 Chip capacitor 1 000 pF 100 MHz or higher L Chip inductor 100 nH 100 MHz or higher 10 nH 2.0 GHz or higher INDUCTOR FOR THE OUTPUT PIN The internal output transistor of this IC consumes 20 mA, to output medium power. To supply current for output transistor, connect an inductor between the Vcc pin (pin 6) and output pin (pin 4). Select large value inductance, as listed above. The inductor has both DC and AC effects. In terms of DC, the inductor biases the output transistor with minimum voltage drop to output enable high level. In terms of AC, the inductor makes output-port-impedance higher to get enough gain. In this case, large inductance and Q is suitable. For above reason, select an inductance of 100 Ω or over impedance in the operating frequency. The gain is a peak in the operating frequency band, and suppressed at lower frequencies. The recommendable inductance can be chosen from example of actual application components list as shown above. CAPACITORS FOR THE VCC, INPUT, AND OUTPUT PINS Capacitors of 1 000 pF are recommendable as the bypass capacitor for the Vcc pin and the coupling capacitors for the input and output pins. The bypass capacitor connected to the Vcc pin is used to minimize ground impedance of Vcc pin. So, stable bias can be supplied against Vcc fluctuation. The coupling capacitors, connected to the input and output pins, are used to cut the DC and minimize RF serial impedance. Their capacitance are therefore selected as lower impedance against a 50 Ω load. The capacitors thus perform as high pass filters, suppressing low frequencies to DC. To obtain a flat gain from 100 MHz upwards, 1 000 pF capacitors are used in the test circuit. In the case of under 10 MHz operation, increase the value of coupling capacitor such as 10 000 pF. Because the coupling capacitors are determined by equation, C = 1/(2πRfc). Data Sheet PU10206EJ01V0DS 7 µPC8182TB ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD AMP-2 3 Top View 1 2 IN OUT C C 6 L 5 4 C 3F → Mounting direction VCC C COMPONENT LIST Notes 1. 30 × 30 × 0.4 mm double-sided copper-clad polyimide board. 8 Value 2. Back side: GND pattern C 1 000 pF 3. Solder plated on pattern L Example: 10 nH 4. : Through holes Data Sheet PU10206EJ01V0DS µPC8182TB TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified) CIRCUIT CURRENT vs. OPERATING AMBIENT TEMPERATURE CIRCUIT CURRENT vs. SUPPLY VOLTAGE 40 40 No Signal 35 VCC = 3.0 V No Signal Circuit Current ICC (mA) Circuit Current ICC (mA) 35 30 25 20 15 10 30 25 20 15 10 5 5 0 0 1 2 3 0 −60 −40 4 VCC = 3.0 V VCC = 3.3 V GP +80 +100 VCC = 3.0 V 20 VCC = 2.7 V 18 16 VCC = 3.3 V VCC = 3.0 V 4 14 3 12 0.1 TA = −40˚C 22 Power Gain GP (dB) 22 Power Gain GP (dB) +40 +60 24 24 20 TA = +25˚C 18 TA = +85˚C 16 14 NF VCC = 2.7 V 0.3 1.0 12 0.1 3.0 0.3 1.0 3.0 Frequency f (GHz) Frequency f (GHz) ISOLATION vs. FREQUENCY INPUT RETURN LOSS, OUTPUT RETURN LOSS vs. FREQUENCY 0 0 VCC = 3.0 V Input Return Loss RLin (dB) Output Return Loss RLout (dB) VCC = 3.0 V −10 Isolation ISL (dB) +20 POWER GAIN vs. FREQUENCY NOISE FIGURE, POWER GAIN vs. FREQUENCY Noise Figure NF (dB) 0 Operating Ambient Temperature TA (˚C) Supply Voltage VCC (V) 5 −20 −20 −30 −40 −50 0.1 0.3 1.0 3.0 RLin −10 −20 RLout −30 −40 −50 0.1 Frequency f (GHz) 0.3 1.0 3.0 Frequency f (GHz) Data Sheet PU10206EJ01V0DS 9 µPC8182TB OUTPUT POWER vs. INPUT POWER +15 OUTPUT POWER vs. INPUT POWER +15 f = 0.9 GHz +10 VCC = 3.0 V f = 0.9 GHz VCC = 3.3 V +5 Output Power Pout (dBm) Output Power Pout (dBm) +10 VCC = 2.7 V 0 VCC = 3.0 V −5 −10 −15 −25 −50 −40 −30 −20 −10 −15 −40 −30 −20 −10 0 +10 OUTPUT POWER vs. INPUT POWER OUTPUT POWER vs. INPUT POWER +15 f = 1.9 GHz +10 VCC = 3.0 V f = 1.9 GHz Output Power Pout (dBm) Output Power Pout (dBm) −10 Input Power Pin (dBm) VCC = 3.3 V +5 VCC = 3.0 V 0 −5 VCC = 2.7 V −10 −15 +5 TA = −40˚C TA = +25˚C 0 −5 TA = +85˚C −10 −15 −20 −25 −50 −40 −30 −20 −10 −25 −50 +10 0 −40 −30 −20 −10 0 +10 Input Power Pin (dBm) Input Power Pin (dBm) OUTPUT POWER vs. INPUT POWER OUTPUT POWER vs. INPUT POWER +15 +15 f = 2.4 GHz Output Power Pout (dBm) Output Power Pout (dBm) TA = −40˚C Input Power Pin (dBm) −20 VCC = 3.3 V +5 VCC = 2.7 V 0 VCC = 3.0 V −5 −10 −15 −25 −50 f = 2.4 GHz +10 VCC = 3.0 V +5 0 TA = −40˚C TA = +25˚C TA = +85˚C −5 −10 −15 −20 −20 −40 −30 −20 −10 0 +10 −25 −50 −40 −30 −20 −10 Input Power Pin (dBm) Input Power Pin (dBm) 10 TA = +85˚C −5 −25 −50 +10 0 +10 +10 TA = +25˚C 0 −20 −20 +15 +5 Data Sheet PU10206EJ01V0DS 0 +10 OUTPUT POWER vs. INPUT POWER +15 VCC = 3.0 V f = 0.9 GHz +5 0 f = 2.4 GHz f = 1.9 GHz −5 −10 −15 −20 3rd Order Intermoduration Distortion IM3 (dBc) −25 −50 −40 −30 −20 −10 +10 0 3RD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE −60 f1 = 900 MHz f2 = 902 MHz −50 VCC = 3.3 V −40 VCC = 3.0 V −30 VCC = 2.7 V −20 −10 0 −15 −10 −5 0 +5 +10 Input Power Pin (dBm) Output Power of Each Tone PO(each) (dBm) 3RD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE 3RD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE −60 f1 = 1 900 MHz f2 = 1 902 MHz −50 VCC = 3.3 V −40 −30 VCC = 3.0 V −20 VCC = 2.7 V −10 0 −15 −10 −5 0 +5 +10 3rd Order Intermoduration Distortion IM3 (dBc) Output Power Pout (dBm) +10 3rd Order Intermoduration Distortion IM3 (dBc) µPC8182TB −60 f1 = 2 400 MHz f2 = 2 402 MHz −50 VCC = 3.3 V −40 VCC = 3.0 V −30 VCC = 2.7 V −20 −10 0 −15 Output Power of Each Tone PO(each) (dBm) −10 −5 0 +5 +10 Output Power of Each Tone PO(each) (dBm) Remark The graphs indicate nominal characteristics. Data Sheet PU10206EJ01V0DS 11 µPC8182TB SMITH CHART (VCC = Vout = 3.0 V) S11-FREQUENCY 0.1 G 3.0 G 1.0 G S22-FREQUENCY 0.1 G 1.0 G 3.0 G 12 Data Sheet PU10206EJ01V0DS µPC8182TB S-PARAMETERS S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form (S2P) that enables direct import to a microwave circuit simulator without keyboard input. Click here to download S-parameters. [RF and Microwave] → [Device Parameters] URL http://www.csd-nec.com/ Data Sheet PU10206EJ01V0DS 13 µPC8182TB PACKAGE DIMENSIONS 6-PIN SUPER MINIMOLD (UNIT: mm) 2.1±0.1 0.2+0.1 –0.05 0.65 0.65 1.3 2.0±0.2 1.25±0.1 14 Data Sheet PU10206EJ01V0DS 0.15+0.1 –0.05 0 to 0.1 0.7 0.9±0.1 0.1 MIN. µPC8182TB NOTES ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation). All the ground pins must be connected together with wide ground pattern to decrease impedance difference. (3) The bypass capacitor should be attached to the VCC pin. (4) The inductor must be attached between VCC and output pins. The inductance value should be determined in accordance with desired frequency. (5) The DC cut capacitor must be attached to input and output pin. RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Infrared Reflow VPS Wave Soldering Soldering Conditions Condition Symbol Peak temperature (package surface temperature) : 260°C or below Time at peak temperature : 10 seconds or less Time at temperature of 220°C or higher : 60 seconds or less Preheating time at 120 to 180°C : 120±30 seconds Maximum number of reflow processes : 3 times Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below Peak temperature (package surface temperature) : 215°C or below Time at temperature of 200°C or higher : 25 to 40 seconds Preheating time at 120 to 150°C : 30 to 60 seconds Maximum number of reflow processes : 3 times Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below Peak temperature (molten solder temperature) : 260°C or below Time at peak temperature : 10 seconds or less IR260 VP215 WS260 Preheating temperature (package surface temperature) : 120°C or below Partial Heating Maximum number of flow processes : 1 time Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below Peak temperature (pin temperature) : 350°C or below Soldering time (per side of device) : 3 seconds or less Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below HS350 Caution Do not use different soldering methods together (except for partial heating). Data Sheet PU10206EJ01V0DS 15 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information. Restricted Substance per RoHS Concentration Limit per RoHS (values are not yet fixed) Concentration contained in CEL devices -A Not Detected Lead (Pb) < 1000 PPM Mercury < 1000 PPM Not Detected Cadmium < 100 PPM Not Detected Hexavalent Chromium < 1000 PPM Not Detected PBB < 1000 PPM Not Detected PBDE < 1000 PPM Not Detected -AZ (*) If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. CEL has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. CEL and CEL suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. See CEL Terms and Conditions for additional clarification of warranties and liability.