NEC UPC8181TB-E3

DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUIT
µPC8181TB
3 V, SILICON MMIC
MEDIUM OUTPUT POWER AMPLIFIER
FOR MOBILE COMMUNICATIONS
DESCRIPTION
The µPC8181TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This
IC operates at 3 V. The medium output power is suitable for RF-TX of mobile communications system.
This IC is manufactured using NEC’s 30 GHz fmax UHS0 (Ultra High Speed Process) silicon bipolar process. This
process uses direct silicon nitride passivation film and gold electrodes. These materials can protect the chip surface
from pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.
FEATURES
• Supply voltage
: VCC = 2.7 to 3.3 V
• Circuit current
: ICC = 23.0 mA TYP. @ VCC = 3.0 V
• Medium output power
: PO(1dB) = +8.0 dBm TYP. @ f = 0.9 GHz
PO(1dB) = +7.0 dBm TYP. @ f = 1.9 GHz
PO(1dB) = +7.0 dBm TYP. @ f = 2.4 GHz
• Power gain
: GP = 19.0 dB TYP. @ f = 0.9 GHz
GP = 21.0 dB TYP. @ f = 1.9 GHz
GP = 22.0 dB TYP. @ f = 2.4 GHz
• Upper limit operating frequency
: fu = 4.0 GHz TYP. @ 3 dB bandwidth (Standard value)
• High-density surface mounting
: 6-pin super minimold package (2.0 × 1.25 × 0.9 mm)
APPLICATION
• Buffer amplifiers on 1.9 to 2.4 GHz mobile communications system.
ORDERING INFORMATION
Part Number
µPC8181TB-E3
Package
6-pin super minimold
Marking
C3E
Supplying Form
• Embossed tape 8 mm wide
• 1, 2, 3 pins face the perforation side of the tape
• Qty 3 kpcs/reel
Remark To order evaluation samples, please contact your local NEC sales office.
Part number for sample order: µPC8181TB
Caution Electro-static sensitive devices
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P15114EJ2V0DS00 (2nd edition)
Date Published July 2001 N CP(K)
Printed in Japan
The mark
shows major revised points.
©
2000, 2001
µPC8181TB
PRODUCT LINE-UP (TA = +25°C, VCC = Vout = 3.0 V, ZS = ZL = 50 Ω)
Part No.
fu
(GHz)
PO(1 dB)
(dBm)
GP
(dB)
ICC
(mA)
Package
Marking
4.0
+8.0 @ f = 0.9 GHz
19.0 @ f = 0.9 GHz
23.0
6-pin super minimold
C3E
+7.0 @ f = 1.9 GHz
21.0 @ f = 1.9 GHz
+7.0 @ f = 2.4 GHz
22.0 @ f = 2.4 GHz
+9.5 @ f = 0.9 GHz
21.5 @ f = 0.9 GHz
30.0
6-pin super minimold
C3F
+9.0 @ f = 1.9 GHz
20.5 @ f = 1.9 GHz
+8.0 @ f = 2.4 GHz
20.5 @ f = 2.4 GHz
+8.0 @ f = 0.9 GHz
13.0 @ f = 0.9 GHz
26.5
6-pin minimold
C1Z
+7.0 @ f = 1.9 GHz
15.5 @ f = 1.9 GHz
+9.5 @ f = 0.9 GHz
20.0 @ f = 0.9 GHz
+6.5 @ f = 1.9 GHz
21.0 @ f = 1.9 GHz
+11.5 @ f = 0.9 GHz
21.0 @ f = 0.9 GHz
+9.5 @ f = 1.5 GHz
21.0 @ f = 1.5 GHz
µPC8181TB
µPC8182TB
2.9
µPC2762T
2.9
µPC2762TB
µPC2763T
2.7
µPC2763TB
µPC2771T
2.2
µPC2771TB
6-pin super minimold
27.0
6-pin minimold
C2A
6-pin super minimold
36.0
6-pin minimold
C2H
6-pin super minimold
Remark Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail.
Caution The package size distinguishes between minimold and super minimold.
SYSTEM APPLICATION EXAMPLE
Digital cellular telephone
RX
DEMOD.
I
Q
÷N
PLL
SW
PLL
I
0°
φ
TX
PA
: µ PC8181TB applicable
90°
Caution The insertion point is different due to the specifications of conjunct devices.
2
Data Sheet P15114EJ2V0DS
Q
µPC8181TB
PIN CONNECTIONS
(Bottom View)
C3E
(Top View)
3
2
1
Pin No.
Pin Name
1
INPUT
4
4
3
2
GND
5
5
2
3
GND
6
6
1
4
OUTPUT
5
GND
6
VCC
PIN EXPLANATION
Pin No.
1
2
3
5
4
6
Pin Name
INPUT
GND
OUTPUT
VCC
Applied
Voltage
(V)
Pin
Voltage
–
0.99
0
Voltage
as same
as VCC
through
external
inductor
2.7 to 3.3
Function and Applications
Internal Equivalent Circuit
Note
(V)
–
–
–
Signal input pin. A internal
matching circuit, configured with
resistors, enables 50 Ω
connection over a wide band.
A multi-feedback circuit is
designed to cancel the
deviations of hFE and resistance.
This pin must be coupled to
signal source with capacitor for
DC cut.
Ground pin. This pin should be
connected to system ground
with minimum inductance.
Ground pattern on the board
should be formed as wide as
possible.
All the ground pins must be
connected together with wide
ground pattern to decrease
impedance difference.
Signal output pin. The inductor
must be attached between VCC
and output pins to supply
current to the internal output
transistors.
6
4
1
3
2
5
Power supply pin, which biases
the internal input transistor.
This pin should be externally
equipped with bypass capacitor
to minimize its impedance.
Note Pin voltage is measured at VCC = 3.0 V.
Data Sheet P15114EJ2V0DS
3
µPC8181TB
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Conditions
Ratings
Unit
Supply Voltage
VCC
TA = +25°C, pin 4 and pin 6
3.6
V
Total Circuit Current
ICC
TA = +25°C
60
mA
Power Dissipation
PD
TA = +85°C
270
mW
Operating Ambient Temperature
TA
−40 to +85
°C
Storage Temperature
Tstg
−55 to +150
°C
Input Power
Pin
+10
dBm
Note
TA = +25°C
Note Mounted on double copper clad 50 × 50 × 1.6 mm epoxy glass PWB
RECOMMENDED OPERATING RANGE
Parameter
Supply Voltage
4
Symbol
MIN.
TYP.
MAX.
Unit
VCC
2.7
3.0
3.3
V
Data Sheet P15114EJ2V0DS
Remark
Same voltage should be applied
to pin 4 and pin 6.
µPC8181TB
ELECTRICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°C, VCC = Vout = 3.0 V,
ZS = ZL = 50 Ω)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
−
23.0
30.0
mA
dB
Circuit Current
ICC
No signal
Power Gain
GP
f = 0.9 GHz, Pin = −30 dBm
17.0
19.0
22.0
f = 1.9 GHz, Pin = −30 dBm
18.0
21.0
24.0
f = 2.4 GHz, Pin = −30 dBm
19.0
22.0
25.0
f = 0.9 GHz
−
4.5
6.0
f = 1.9 GHz
−
4.5
6.0
f = 2.4 GHz
−
4.5
6.0
f = 0.9 GHz, Pin = −30 dBm
28.0
33.0
−
f = 1.9 GHz, Pin = −30 dBm
27.0
32.0
−
f = 2.4 GHz, Pin = −30 dBm
26.5
31.5
−
f = 0.9 GHz, Pin = −30 dBm
5.5
7.5
−
f = 1.9 GHz, Pin = −30 dBm
8.5
10.5
−
f = 2.4 GHz, Pin = −30 dBm
9.0
11.0
−
f = 0.9 GHz, Pin = −30 dBm
6.5
9.0
−
f = 1.9 GHz, Pin = −30 dBm
7.5
10.0
−
f = 2.4 GHz, Pin = −30 dBm
9.0
12.0
−
f = 0.9 GHz
+6.0
+8.0
−
f = 1.9 GHz
+4.5
+7.0
−
f = 2.4 GHz
+4.5
+7.0
−
f = 0.9 GHz, Pin = −5 dBm
−
+9.5
−
f = 1.9 GHz, Pin = −5 dBm
−
+9.0
−
f = 2.4 GHz, Pin = −5 dBm
−
+9.0
−
3 dB down below from gain at f = 0.1 GHz
−
4.0
−
Noise Figure
Isolation
Input Return Loss
Output Return Loss
Gain 1 dB Compression Output
Power
Saturated Output Power
Upper Limit Operating Frequency
NF
ISL
RLin
RLout
PO(1dB)
PO(sat)
fu
Data Sheet P15114EJ2V0DS
dB
dB
dB
dB
dBm
dBm
GHz
5
µPC8181TB
TEST CIRCUIT
VCC
1 000 pF
C3
L
6
50 Ω
C1
IN
C2
4
1
50 Ω
OUT
1 000 pF
1 000 pF
2, 3, 5
COMPONENTS OF TEST CIRCUIT
EXAMPLE OF ACTUAL APPLICATION COMPONENTS
FOR MEASURING ELECTRICAL
CHARACTERISTICS
Type
Value
C1, C2
Bias Tee
1 000 pF
C3
Capacitor
1 000 pF
L
Bias Tee
1 000 nH
Type
Value
Operating Frequency
C1 to C3
Chip capacitor
1 000 pF
100 MHz or higher
L
Chip inductor
100 nH
100 MHz or higher
10 nH
2.0 GHz or higher
INDUCTOR FOR THE OUTPUT PIN
The internal output transistor of this IC consumes 20 mA, to output medium power. To supply current for output
transistor, connect an inductor between the Vcc pin (pin 6) and output pin (pin 4). Select large value inductance, as
listed above.
The inductor has both DC and AC effects. In terms of DC, the inductor biases the output transistor with minimum
voltage drop to output enable high level. In terms of AC, the inductor make output-port-impedance higher to get
enough gain. In this case, large inductance and Q is suitable.
For above reason, select an inductance of 100 Ω or over impedance in the operating frequency. The gain is a
peak in the operating frequency band, and suppressed at lower frequencies.
The recommendable inductance can be chosen from example of actual application components list as shown
above.
CAPACITORS FOR THE VCC, INPUT, AND OUTPUT PINS
Capacitors of 1 000 pF are recommendable as the bypass capacitor for the Vcc pin and the coupling capacitors
for the input and output pins.
The bypass capacitor connected to the Vcc pin is used to minimize ground impedance of Vcc pin. So, stable bias
can be supplied against Vcc fluctuation.
The coupling capacitors, connected to the input and output pins, are used to cut the DC and minimize RF serial
impedance. Their capacitance are therefore selected as lower impedance against a 50 Ω load. The capacitors thus
perform as high pass filters, suppressing low frequencies to DC.
To obtain a flat gain from 100 MHz upwards, 1 000 pF capacitors are used in the test circuit. In the case of under
10 MHz operation, increase the value of coupling capacitor such as 10 000 pF. Because the coupling capacitors are
determined by equation, C = 1/(2πRfc).
6
Data Sheet P15114EJ2V0DS
µPC8181TB
ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD
AMP-2
3
Top View
1
2
IN
OUT
C
C
6
L
5
4
C
3E
→
Mounting direction
VCC
C
COMPONENT LIST
Remarks 1. 30 × 30 × 0.4 mm double sided copper clad polyimide board.
2. Back side: GND pattern
Value
C
1 000 pF
L
Example: 10 nH
3. Solder plated on pattern
4.
: Through holes
Data Sheet P15114EJ2V0DS
7
µPC8181TB
TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°°C)
CIRCUIT CURRENT vs. OPERATING
AMBIENT TEMPERATURE
CIRCUIT CURRENT vs. SUPPLY VOLTAGE
40
40
No signal
35
Circuit Current ICC (mA)
Circuit Current ICC (mA)
35
30
25
20
15
10
30
25
20
15
10
5
5
0
−60
0
0
1
2
3
4
+20 +40 +60 +80 +100
NOISE FIGURE, POWER GAIN vs. FREQUENCY
POWER GAIN vs. FREQUENCY
30
VCC = 3.0 V
VCC = 3.0 V
GP
20
VCC = 2.7 V
15
VCC = 3.3 V
10
VCC = 3.0 V
NF
4
5
3
0
0.1
TA = −40°C
25
Power Gain GP (dB)
Power Gain GP (dB)
25
TA = +25°C
20
TA = −85°C
15
10
5
VCC = 2.7 V
0.3
1.0
0
0.1
3.0
0.3
Frequency f (GHz)
0
VCC = 3.0 V
IsoIation ISL (dB)
−10
−20
−30
−40
−50
0.1
0.3
1.0
3.0
INPUT RETURN LOSS, OUTPUT RETURN
LOSS vs. FREQUENCY
Input Return Loss RLin (dB)
Output Return Loss RLout (dB)
0
1.0
Frequency f (GHz)
ISOLATION vs. FREQUENCY
3.0
VCC = 3.0 V
RLin
−10
RLout
−20
−30
−40
−50
0.1
0.3
1.0
Frequency f (GHz)
Frequency f (GHz)
8
0
Operating Ambient Temperature TA (°C)
VCC = 3.3 V
Noise Figure NF (dB)
−40 −20
Supply Voltage VCC (V)
30
5
No signal
VCC = 3.0 V
Data Sheet P15114EJ2V0DS
3.0
µPC8181TB
OUTPUT POWER vs. INPUT POWER
OUTPUT POWER vs. INPUT POWER
Output Power Pout (dBm)
+15
f = 0.9 GHz
+10
VCC = 3.3 V
+5
+10
Output Power Pout (dBm)
+15
VCC = 2.7 V
0
−5
VCC = 3.0 V
−10
−15
−20
−25
−40
−30
−20
−10
0
−5
−10
TA = +25°C
−15
−20
−40
−30
−20
−10
0
+10
Input Power Pin (dBm)
Input Power Pin (dBm)
OUTPUT POWER vs. INPUT POWER
OUTPUT POWER vs. INPUT POWER
+15
VCC = 3.3 V
f = 1.9 GHz
+10
+5
VCC = 2.7 V
0
−5
VCC = 3.0 V
−10
−15
−20
−25
TA = +85°C
f = 1.9 GHz
VCC = 3.0 V
+5
TA = −40°C
0
−5
−10
TA = +25°C
−15
−20
−25
−30
−50
−40
−30
−20
−10
0
−30
−50
+10
−40
−30
−20
−10
0
+10
Input Power Pin (dBm)
Input Power Pin (dBm)
OUTPUT POWER vs. INPUT POWER
OUTPUT POWER vs. INPUT POWER
+15
+10
+15
VCC = 3.3 V
f = 2.4 GHz
+10
+5
0
Output Power Pout (dBm)
Output Power Pout (dBm)
TA = −40°C
0
−30
−50
+10
Output Power Pout (dBm)
Output Power Pout (dBm)
+10
+5
−25
−30
−50
+15
TA = +85°C
f = 0.9 GHz
VCC = 3.0 V
VCC = 2.7 V
VCC = 3.0 V
−5
−10
−15
−20
−25
−30
−50
TA = +85°C
f = 2.4 GHz
VCC = 3.0 V
+5
TA = −40°C
0
−5
−10
TA = +25°C
−15
−20
−25
−40
−30
−20
−10
0
+10
−30
−50
−40
Input Power Pin (dBm)
−30
−20
−10
0
+10
Input Power Pin (dBm)
Data Sheet P15114EJ2V0DS
9
µPC8181TB
OUTPUT POWER vs. INPUT POWER
VCC = 3.0 V
+5
Saturated Output Power PO(sat) (dBm)
Output Power Pout (dBm)
+10
f = 2.4 GHz
0
−5
f = 1.9 GHz
−10
−15
f = 0.9 GHz
−20
−25
3rd Order Intermoduration Distortion IM3 (dBc)
−30
−50
−40
−30
−20
−10
0
+10
VCC = 3.3 V
+10
VCC = 3.0 V
+8
+6
VCC = 2.7 V
+4
+2
0
0.1
0.3
3.0
3RD ORDER INTERMODULATION
DISTORTION vs. OUTPUT POWER
OF EACH TONE
3RD ORDER INTERMODULATION
DISTORTION vs. OUTPUT POWER
OF EACH TONE
60
f1 = 900 MHz
f2 = 902 MHz
50
40
VCC = 3.3 V
30
VCC = 3.0 V
VCC = 2.7 V
20
10
0
−15
−10
−5
+5
0
+10
+15
60
f1 = 1 900 MHz
f2 = 1 902 MHz
50
40
30
20
VCC = 2.7 V
10
0
−15
−10
f1 = 2 400 MHz
f2 = 2 402 MHz
50
40
VCC = 3.3 V
30
VCC = 3.0 V
VCC = 2.7 V
20
10
0
−15
−10
−5
0
+5
−5
0
+5
Output Power of Each Tone PO(each) (dBm)
3RD ORDER INTERMODULATION
DISTORTION vs. OUTPUT POWER
OF EACH TONE
60
VCC = 3.3 V
VCC = 3.0 V
+10
Output Power of Each Tone PO(each) (dBm)
Remark The graphs indicate nominal characteristics.
10
1.0
Frequency f (GHz)
Output Power of Each Tone PO(each) (dBm)
3rd Order Intermoduration Distortion IM3 (dBc)
+12
Input Power Pin (dBm)
3rd Order Intermoduration Distortion IM3 (dBc)
+15
SATURATED OUTPUT POWER vs. FREQUENCY
Data Sheet P15114EJ2V0DS
+10
µPC8181TB
S-PARAMETERS (VCC = Vout = 3.0 V)
S11-Frequency
0.1 G
2.0 G
4.0 G
1.0 G
3.0 G
S22-Frequency
0.1 G
1
1.0 G
3.0 G
2.0 G
4.0 G
Data Sheet P15114EJ2V0DS
11
µPC8181TB
TYPICAL S-PARAMETER VALUES (TA = +25°°C)
VCC = Vout = 3.0 V, ICC = 23 mA
12
FREQUENCY
MHz
MAG.
S11
ANG.
MAG.
S21
ANG.
MAG.
S12
ANG.
MAG.
ANG.
100.0000
200.0000
300.0000
400.0000
500.0000
600.0000
700.0000
800.0000
900.0000
1000.0000
1100.0000
1200.0000
1300.0000
1400.0000
1500.0000
1600.0000
1700.0000
1800.0000
1900.0000
2000.0000
2100.0000
2200.0000
2300.0000
2400.0000
2500.0000
2600.0000
2700.0000
2800.0000
2900.0000
3000.0000
3100.0000
3200.0000
3300.0000
3400.0000
3500.0000
3600.0000
3700.0000
3800.0000
3900.0000
4000.0000
4100.0000
0.452
0.467
0.470
0.460
0.438
0.415
0.397
0.395
0.399
0.404
0.396
0.394
0.385
0.368
0.347
0.335
0.327
0.328
0.327
0.325
0.316
0.295
0.288
0.291
0.303
0.317
0.335
0.349
0.347
0.345
0.341
0.331
0.323
0.311
0.302
0.289
0.266
0.253
0.238
0.238
0.244
−2.7
−5.7
−7.5
−9.3
−11.5
−14.7
−18.6
−22.4
−25.6
−28.1
−29.0
−28.5
−28.0
−28.8
−29.5
−30.9
−31.5
−31.2
−29.4
−29.4
−28.5
−29.4
−30.8
−34.1
−38.3
−41.1
−41.3
−41.0
−39.4
−43.2
−45.4
−47.9
−49.8
−52.1
−52.6
−54.9
−56.5
−61.5
−65.6
−70.7
−74.0
9.078
9.098
9.143
9.237
9.284
9.442
9.670
9.897
10.166
10.496
10.903
11.329
11.895
12.145
12.356
12.670
12.966
13.410
13.722
14.151
14.412
14.747
15.144
15.463
15.264
15.137
14.774
14.176
13.710
12.808
12.313
11.587
11.003
10.638
10.228
9.985
9.543
9.184
8.816
8.488
8.186
−2.0
−4.9
−6.9
−10.1
−11.9
−14.6
−17.0
−19.7
−22.7
−26.0
−29.0
−32.8
−37.9
−42.4
−47.6
−51.8
−56.4
−61.4
−66.8
−72.3
−78.1
−84.1
−90.3
−97.4
−104.6
−112.6
−119.8
−127.7
−133.7
−139.8
−146.0
−149.3
−154.5
−157.7
−162.0
−166.5
−170.1
−174.5
−177.7
178.2
174.3
0.020
0.021
0.021
0.021
0.021
0.022
0.022
0.022
0.023
0.022
0.023
0.025
0.025
0.024
0.025
0.026
0.024
0.026
0.027
0.026
0.028
0.027
0.029
0.029
0.029
0.028
0.029
0.031
0.029
0.029
0.031
0.029
0.031
0.031
0.029
0.030
0.030
0.031
0.030
0.032
0.032
4.3
4.2
8.2
9.8
11.4
8.1
11.5
16.3
14.5
13.4
18.0
16.6
17.4
22.0
24.3
20.6
21.4
23.2
27.5
24.6
26.4
26.5
27.5
27.1
27.7
25.5
25.5
25.0
32.9
24.8
28.9
31.6
31.2
29.5
32.5
31.4
39.6
34.1
36.2
38.9
37.0
0.338
0.346
0.344
0.335
0.328
0.337
0.350
0.354
0.342
0.331
0.332
0.353
0.376
0.374
0.361
0.356
0.356
0.366
0.367
0.369
0.363
0.361
0.359
0.346
0.323
0.303
0.294
0.299
0.304
0.317
0.325
0.318
0.315
0.307
0.302
0.303
0.301
0.294
0.275
0.270
0.266
−1.6
−2.1
−1.0
−2.7
−4.8
−7.5
−7.9
−6.8
−6.0
−7.9
−10.8
−13.4
−14.3
−15.0
−16.3
−19.3
−22.0
−23.9
−25.6
−28.5
−31.7
−35.4
−37.1
−39.0
−40.6
−43.1
−43.9
−43.0
−41.3
−44.9
−46.7
−48.7
−52.1
−56.1
−60.0
−63.7
−65.1
−67.5
−68.8
−71.0
−75.1
Data Sheet P15114EJ2V0DS
S22
K
1.89
1.73
1.72
1.75
1.84
1.73
1.72
1.69
1.56
1.60
1.48
1.33
1.26
1.28
1.28
1.22
1.29
1.17
1.11
1.11
1.05
1.08
1.02
1.01
1.04
1.09
1.07
1.03
1.09
1.15
1.13
1.25
1.27
1.32
1.44
1.47
1.54
1.55
1.71
1.70
1.75
µPC8181TB
PACKAGE DIMENSIONS
6-PIN SUPER MINIMOLD (UNIT: mm)
2.1±0.1
0.2+0.1
–0.05
0.65
0.65
1.3
Data Sheet P15114EJ2V0DS
0.15+0.1
–0.05
0 to 0.1
0.7
0.1 MIN.
0.9±0.1
2.0±0.2
1.25±0.1
13
µPC8181TB
NOTES ON CORRECT USE
(1) Observe precautions for handling because of electro-static sensitive devices.
(2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation).
All the ground pins must be connected together with wide ground pattern to decrease impedance difference.
(3) The bypass capacitor should be attached to the VCC pin.
(4) The inductor must be attached between VCC and output pins. The inductance value should be determined in
accordance with desired frequency.
(5) The DC cut capacitor must be attached to input and output pins.
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered under the following recommended conditions.
For soldering methods and
conditions other than those recommended below, contact your NEC sales representative.
Soldering Method
Soldering Conditions
Recommended Condition Symbol
Infrared Reflow
Package peak temperature: 235°C or below
Time: 30 seconds or less (at 210°C)
Count: 3, Exposure limit: NoneNote
IR35-00-3
VPS
Package peak temperature: 215°C or below
Time: 40 seconds or less (at 200°C)
Count: 3, Exposure limit: NoneNote
VP15-00-3
Wave Soldering
Soldering bath temperature: 260°C or below
Time: 10 seconds or less
Count: 1, Exposure limit: NoneNote
WS60-00-1
Partial Heating
Pin temperature: 300°C or below
Time: 3 seconds or less (per side of device)
Exposure limit: NoneNote
–
Note After opening the dry pack, keep it in a place below 25°C and 65% RH for the allowable storage period.
Caution Do not use different soldering methods together (except for partial heating).
For details of recommended soldering conditions for surface mounting, refer to information document
SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E).
14
Data Sheet P15114EJ2V0DS
µPC8181TB
[MEMO]
Data Sheet P15114EJ2V0DS
15
µPC8181TB
ATTENTION
OBSERVE PRECAUTIONS
FOR HANDLING
ELECTROSTATIC
SENSITIVE
DEVICES
• The information in this document is current as of July, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
• NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
• While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
• NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4