DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC8181TB 3 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The µPC8181TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC operates at 3 V. The medium output power is suitable for RF-TX of mobile communications system. This IC is manufactured using NEC’s 30 GHz fmax UHS0 (Ultra High Speed Process) silicon bipolar process. This process uses direct silicon nitride passivation film and gold electrodes. These materials can protect the chip surface from pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability. FEATURES • Supply voltage : VCC = 2.7 to 3.3 V • Circuit current : ICC = 23.0 mA TYP. @ VCC = 3.0 V • Medium output power : PO(1dB) = +8.0 dBm TYP. @ f = 0.9 GHz PO(1dB) = +7.0 dBm TYP. @ f = 1.9 GHz PO(1dB) = +7.0 dBm TYP. @ f = 2.4 GHz • Power gain : GP = 19.0 dB TYP. @ f = 0.9 GHz GP = 21.0 dB TYP. @ f = 1.9 GHz GP = 22.0 dB TYP. @ f = 2.4 GHz • Upper limit operating frequency : fu = 4.0 GHz TYP. @ 3 dB bandwidth (Standard value) • High-density surface mounting : 6-pin super minimold package (2.0 × 1.25 × 0.9 mm) APPLICATION • Buffer amplifiers on 1.9 to 2.4 GHz mobile communications system. ORDERING INFORMATION Part Number µPC8181TB-E3 Package 6-pin super minimold Marking C3E Supplying Form • Embossed tape 8 mm wide • 1, 2, 3 pins face the perforation side of the tape • Qty 3 kpcs/reel Remark To order evaluation samples, please contact your local NEC sales office. Part number for sample order: µPC8181TB Caution Electro-static sensitive devices The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. P15114EJ2V0DS00 (2nd edition) Date Published July 2001 N CP(K) Printed in Japan The mark shows major revised points. © 2000, 2001 µPC8181TB PRODUCT LINE-UP (TA = +25°C, VCC = Vout = 3.0 V, ZS = ZL = 50 Ω) Part No. fu (GHz) PO(1 dB) (dBm) GP (dB) ICC (mA) Package Marking 4.0 +8.0 @ f = 0.9 GHz 19.0 @ f = 0.9 GHz 23.0 6-pin super minimold C3E +7.0 @ f = 1.9 GHz 21.0 @ f = 1.9 GHz +7.0 @ f = 2.4 GHz 22.0 @ f = 2.4 GHz +9.5 @ f = 0.9 GHz 21.5 @ f = 0.9 GHz 30.0 6-pin super minimold C3F +9.0 @ f = 1.9 GHz 20.5 @ f = 1.9 GHz +8.0 @ f = 2.4 GHz 20.5 @ f = 2.4 GHz +8.0 @ f = 0.9 GHz 13.0 @ f = 0.9 GHz 26.5 6-pin minimold C1Z +7.0 @ f = 1.9 GHz 15.5 @ f = 1.9 GHz +9.5 @ f = 0.9 GHz 20.0 @ f = 0.9 GHz +6.5 @ f = 1.9 GHz 21.0 @ f = 1.9 GHz +11.5 @ f = 0.9 GHz 21.0 @ f = 0.9 GHz +9.5 @ f = 1.5 GHz 21.0 @ f = 1.5 GHz µPC8181TB µPC8182TB 2.9 µPC2762T 2.9 µPC2762TB µPC2763T 2.7 µPC2763TB µPC2771T 2.2 µPC2771TB 6-pin super minimold 27.0 6-pin minimold C2A 6-pin super minimold 36.0 6-pin minimold C2H 6-pin super minimold Remark Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail. Caution The package size distinguishes between minimold and super minimold. SYSTEM APPLICATION EXAMPLE Digital cellular telephone RX DEMOD. I Q ÷N PLL SW PLL I 0° φ TX PA : µ PC8181TB applicable 90° Caution The insertion point is different due to the specifications of conjunct devices. 2 Data Sheet P15114EJ2V0DS Q µPC8181TB PIN CONNECTIONS (Bottom View) C3E (Top View) 3 2 1 Pin No. Pin Name 1 INPUT 4 4 3 2 GND 5 5 2 3 GND 6 6 1 4 OUTPUT 5 GND 6 VCC PIN EXPLANATION Pin No. 1 2 3 5 4 6 Pin Name INPUT GND OUTPUT VCC Applied Voltage (V) Pin Voltage – 0.99 0 Voltage as same as VCC through external inductor 2.7 to 3.3 Function and Applications Internal Equivalent Circuit Note (V) – – – Signal input pin. A internal matching circuit, configured with resistors, enables 50 Ω connection over a wide band. A multi-feedback circuit is designed to cancel the deviations of hFE and resistance. This pin must be coupled to signal source with capacitor for DC cut. Ground pin. This pin should be connected to system ground with minimum inductance. Ground pattern on the board should be formed as wide as possible. All the ground pins must be connected together with wide ground pattern to decrease impedance difference. Signal output pin. The inductor must be attached between VCC and output pins to supply current to the internal output transistors. 6 4 1 3 2 5 Power supply pin, which biases the internal input transistor. This pin should be externally equipped with bypass capacitor to minimize its impedance. Note Pin voltage is measured at VCC = 3.0 V. Data Sheet P15114EJ2V0DS 3 µPC8181TB ABSOLUTE MAXIMUM RATINGS Parameter Symbol Conditions Ratings Unit Supply Voltage VCC TA = +25°C, pin 4 and pin 6 3.6 V Total Circuit Current ICC TA = +25°C 60 mA Power Dissipation PD TA = +85°C 270 mW Operating Ambient Temperature TA −40 to +85 °C Storage Temperature Tstg −55 to +150 °C Input Power Pin +10 dBm Note TA = +25°C Note Mounted on double copper clad 50 × 50 × 1.6 mm epoxy glass PWB RECOMMENDED OPERATING RANGE Parameter Supply Voltage 4 Symbol MIN. TYP. MAX. Unit VCC 2.7 3.0 3.3 V Data Sheet P15114EJ2V0DS Remark Same voltage should be applied to pin 4 and pin 6. µPC8181TB ELECTRICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°C, VCC = Vout = 3.0 V, ZS = ZL = 50 Ω) Parameter Symbol Conditions MIN. TYP. MAX. Unit − 23.0 30.0 mA dB Circuit Current ICC No signal Power Gain GP f = 0.9 GHz, Pin = −30 dBm 17.0 19.0 22.0 f = 1.9 GHz, Pin = −30 dBm 18.0 21.0 24.0 f = 2.4 GHz, Pin = −30 dBm 19.0 22.0 25.0 f = 0.9 GHz − 4.5 6.0 f = 1.9 GHz − 4.5 6.0 f = 2.4 GHz − 4.5 6.0 f = 0.9 GHz, Pin = −30 dBm 28.0 33.0 − f = 1.9 GHz, Pin = −30 dBm 27.0 32.0 − f = 2.4 GHz, Pin = −30 dBm 26.5 31.5 − f = 0.9 GHz, Pin = −30 dBm 5.5 7.5 − f = 1.9 GHz, Pin = −30 dBm 8.5 10.5 − f = 2.4 GHz, Pin = −30 dBm 9.0 11.0 − f = 0.9 GHz, Pin = −30 dBm 6.5 9.0 − f = 1.9 GHz, Pin = −30 dBm 7.5 10.0 − f = 2.4 GHz, Pin = −30 dBm 9.0 12.0 − f = 0.9 GHz +6.0 +8.0 − f = 1.9 GHz +4.5 +7.0 − f = 2.4 GHz +4.5 +7.0 − f = 0.9 GHz, Pin = −5 dBm − +9.5 − f = 1.9 GHz, Pin = −5 dBm − +9.0 − f = 2.4 GHz, Pin = −5 dBm − +9.0 − 3 dB down below from gain at f = 0.1 GHz − 4.0 − Noise Figure Isolation Input Return Loss Output Return Loss Gain 1 dB Compression Output Power Saturated Output Power Upper Limit Operating Frequency NF ISL RLin RLout PO(1dB) PO(sat) fu Data Sheet P15114EJ2V0DS dB dB dB dB dBm dBm GHz 5 µPC8181TB TEST CIRCUIT VCC 1 000 pF C3 L 6 50 Ω C1 IN C2 4 1 50 Ω OUT 1 000 pF 1 000 pF 2, 3, 5 COMPONENTS OF TEST CIRCUIT EXAMPLE OF ACTUAL APPLICATION COMPONENTS FOR MEASURING ELECTRICAL CHARACTERISTICS Type Value C1, C2 Bias Tee 1 000 pF C3 Capacitor 1 000 pF L Bias Tee 1 000 nH Type Value Operating Frequency C1 to C3 Chip capacitor 1 000 pF 100 MHz or higher L Chip inductor 100 nH 100 MHz or higher 10 nH 2.0 GHz or higher INDUCTOR FOR THE OUTPUT PIN The internal output transistor of this IC consumes 20 mA, to output medium power. To supply current for output transistor, connect an inductor between the Vcc pin (pin 6) and output pin (pin 4). Select large value inductance, as listed above. The inductor has both DC and AC effects. In terms of DC, the inductor biases the output transistor with minimum voltage drop to output enable high level. In terms of AC, the inductor make output-port-impedance higher to get enough gain. In this case, large inductance and Q is suitable. For above reason, select an inductance of 100 Ω or over impedance in the operating frequency. The gain is a peak in the operating frequency band, and suppressed at lower frequencies. The recommendable inductance can be chosen from example of actual application components list as shown above. CAPACITORS FOR THE VCC, INPUT, AND OUTPUT PINS Capacitors of 1 000 pF are recommendable as the bypass capacitor for the Vcc pin and the coupling capacitors for the input and output pins. The bypass capacitor connected to the Vcc pin is used to minimize ground impedance of Vcc pin. So, stable bias can be supplied against Vcc fluctuation. The coupling capacitors, connected to the input and output pins, are used to cut the DC and minimize RF serial impedance. Their capacitance are therefore selected as lower impedance against a 50 Ω load. The capacitors thus perform as high pass filters, suppressing low frequencies to DC. To obtain a flat gain from 100 MHz upwards, 1 000 pF capacitors are used in the test circuit. In the case of under 10 MHz operation, increase the value of coupling capacitor such as 10 000 pF. Because the coupling capacitors are determined by equation, C = 1/(2πRfc). 6 Data Sheet P15114EJ2V0DS µPC8181TB ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD AMP-2 3 Top View 1 2 IN OUT C C 6 L 5 4 C 3E → Mounting direction VCC C COMPONENT LIST Remarks 1. 30 × 30 × 0.4 mm double sided copper clad polyimide board. 2. Back side: GND pattern Value C 1 000 pF L Example: 10 nH 3. Solder plated on pattern 4. : Through holes Data Sheet P15114EJ2V0DS 7 µPC8181TB TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°°C) CIRCUIT CURRENT vs. OPERATING AMBIENT TEMPERATURE CIRCUIT CURRENT vs. SUPPLY VOLTAGE 40 40 No signal 35 Circuit Current ICC (mA) Circuit Current ICC (mA) 35 30 25 20 15 10 30 25 20 15 10 5 5 0 −60 0 0 1 2 3 4 +20 +40 +60 +80 +100 NOISE FIGURE, POWER GAIN vs. FREQUENCY POWER GAIN vs. FREQUENCY 30 VCC = 3.0 V VCC = 3.0 V GP 20 VCC = 2.7 V 15 VCC = 3.3 V 10 VCC = 3.0 V NF 4 5 3 0 0.1 TA = −40°C 25 Power Gain GP (dB) Power Gain GP (dB) 25 TA = +25°C 20 TA = −85°C 15 10 5 VCC = 2.7 V 0.3 1.0 0 0.1 3.0 0.3 Frequency f (GHz) 0 VCC = 3.0 V IsoIation ISL (dB) −10 −20 −30 −40 −50 0.1 0.3 1.0 3.0 INPUT RETURN LOSS, OUTPUT RETURN LOSS vs. FREQUENCY Input Return Loss RLin (dB) Output Return Loss RLout (dB) 0 1.0 Frequency f (GHz) ISOLATION vs. FREQUENCY 3.0 VCC = 3.0 V RLin −10 RLout −20 −30 −40 −50 0.1 0.3 1.0 Frequency f (GHz) Frequency f (GHz) 8 0 Operating Ambient Temperature TA (°C) VCC = 3.3 V Noise Figure NF (dB) −40 −20 Supply Voltage VCC (V) 30 5 No signal VCC = 3.0 V Data Sheet P15114EJ2V0DS 3.0 µPC8181TB OUTPUT POWER vs. INPUT POWER OUTPUT POWER vs. INPUT POWER Output Power Pout (dBm) +15 f = 0.9 GHz +10 VCC = 3.3 V +5 +10 Output Power Pout (dBm) +15 VCC = 2.7 V 0 −5 VCC = 3.0 V −10 −15 −20 −25 −40 −30 −20 −10 0 −5 −10 TA = +25°C −15 −20 −40 −30 −20 −10 0 +10 Input Power Pin (dBm) Input Power Pin (dBm) OUTPUT POWER vs. INPUT POWER OUTPUT POWER vs. INPUT POWER +15 VCC = 3.3 V f = 1.9 GHz +10 +5 VCC = 2.7 V 0 −5 VCC = 3.0 V −10 −15 −20 −25 TA = +85°C f = 1.9 GHz VCC = 3.0 V +5 TA = −40°C 0 −5 −10 TA = +25°C −15 −20 −25 −30 −50 −40 −30 −20 −10 0 −30 −50 +10 −40 −30 −20 −10 0 +10 Input Power Pin (dBm) Input Power Pin (dBm) OUTPUT POWER vs. INPUT POWER OUTPUT POWER vs. INPUT POWER +15 +10 +15 VCC = 3.3 V f = 2.4 GHz +10 +5 0 Output Power Pout (dBm) Output Power Pout (dBm) TA = −40°C 0 −30 −50 +10 Output Power Pout (dBm) Output Power Pout (dBm) +10 +5 −25 −30 −50 +15 TA = +85°C f = 0.9 GHz VCC = 3.0 V VCC = 2.7 V VCC = 3.0 V −5 −10 −15 −20 −25 −30 −50 TA = +85°C f = 2.4 GHz VCC = 3.0 V +5 TA = −40°C 0 −5 −10 TA = +25°C −15 −20 −25 −40 −30 −20 −10 0 +10 −30 −50 −40 Input Power Pin (dBm) −30 −20 −10 0 +10 Input Power Pin (dBm) Data Sheet P15114EJ2V0DS 9 µPC8181TB OUTPUT POWER vs. INPUT POWER VCC = 3.0 V +5 Saturated Output Power PO(sat) (dBm) Output Power Pout (dBm) +10 f = 2.4 GHz 0 −5 f = 1.9 GHz −10 −15 f = 0.9 GHz −20 −25 3rd Order Intermoduration Distortion IM3 (dBc) −30 −50 −40 −30 −20 −10 0 +10 VCC = 3.3 V +10 VCC = 3.0 V +8 +6 VCC = 2.7 V +4 +2 0 0.1 0.3 3.0 3RD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE 3RD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE 60 f1 = 900 MHz f2 = 902 MHz 50 40 VCC = 3.3 V 30 VCC = 3.0 V VCC = 2.7 V 20 10 0 −15 −10 −5 +5 0 +10 +15 60 f1 = 1 900 MHz f2 = 1 902 MHz 50 40 30 20 VCC = 2.7 V 10 0 −15 −10 f1 = 2 400 MHz f2 = 2 402 MHz 50 40 VCC = 3.3 V 30 VCC = 3.0 V VCC = 2.7 V 20 10 0 −15 −10 −5 0 +5 −5 0 +5 Output Power of Each Tone PO(each) (dBm) 3RD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE 60 VCC = 3.3 V VCC = 3.0 V +10 Output Power of Each Tone PO(each) (dBm) Remark The graphs indicate nominal characteristics. 10 1.0 Frequency f (GHz) Output Power of Each Tone PO(each) (dBm) 3rd Order Intermoduration Distortion IM3 (dBc) +12 Input Power Pin (dBm) 3rd Order Intermoduration Distortion IM3 (dBc) +15 SATURATED OUTPUT POWER vs. FREQUENCY Data Sheet P15114EJ2V0DS +10 µPC8181TB S-PARAMETERS (VCC = Vout = 3.0 V) S11-Frequency 0.1 G 2.0 G 4.0 G 1.0 G 3.0 G S22-Frequency 0.1 G 1 1.0 G 3.0 G 2.0 G 4.0 G Data Sheet P15114EJ2V0DS 11 µPC8181TB TYPICAL S-PARAMETER VALUES (TA = +25°°C) VCC = Vout = 3.0 V, ICC = 23 mA 12 FREQUENCY MHz MAG. S11 ANG. MAG. S21 ANG. MAG. S12 ANG. MAG. ANG. 100.0000 200.0000 300.0000 400.0000 500.0000 600.0000 700.0000 800.0000 900.0000 1000.0000 1100.0000 1200.0000 1300.0000 1400.0000 1500.0000 1600.0000 1700.0000 1800.0000 1900.0000 2000.0000 2100.0000 2200.0000 2300.0000 2400.0000 2500.0000 2600.0000 2700.0000 2800.0000 2900.0000 3000.0000 3100.0000 3200.0000 3300.0000 3400.0000 3500.0000 3600.0000 3700.0000 3800.0000 3900.0000 4000.0000 4100.0000 0.452 0.467 0.470 0.460 0.438 0.415 0.397 0.395 0.399 0.404 0.396 0.394 0.385 0.368 0.347 0.335 0.327 0.328 0.327 0.325 0.316 0.295 0.288 0.291 0.303 0.317 0.335 0.349 0.347 0.345 0.341 0.331 0.323 0.311 0.302 0.289 0.266 0.253 0.238 0.238 0.244 −2.7 −5.7 −7.5 −9.3 −11.5 −14.7 −18.6 −22.4 −25.6 −28.1 −29.0 −28.5 −28.0 −28.8 −29.5 −30.9 −31.5 −31.2 −29.4 −29.4 −28.5 −29.4 −30.8 −34.1 −38.3 −41.1 −41.3 −41.0 −39.4 −43.2 −45.4 −47.9 −49.8 −52.1 −52.6 −54.9 −56.5 −61.5 −65.6 −70.7 −74.0 9.078 9.098 9.143 9.237 9.284 9.442 9.670 9.897 10.166 10.496 10.903 11.329 11.895 12.145 12.356 12.670 12.966 13.410 13.722 14.151 14.412 14.747 15.144 15.463 15.264 15.137 14.774 14.176 13.710 12.808 12.313 11.587 11.003 10.638 10.228 9.985 9.543 9.184 8.816 8.488 8.186 −2.0 −4.9 −6.9 −10.1 −11.9 −14.6 −17.0 −19.7 −22.7 −26.0 −29.0 −32.8 −37.9 −42.4 −47.6 −51.8 −56.4 −61.4 −66.8 −72.3 −78.1 −84.1 −90.3 −97.4 −104.6 −112.6 −119.8 −127.7 −133.7 −139.8 −146.0 −149.3 −154.5 −157.7 −162.0 −166.5 −170.1 −174.5 −177.7 178.2 174.3 0.020 0.021 0.021 0.021 0.021 0.022 0.022 0.022 0.023 0.022 0.023 0.025 0.025 0.024 0.025 0.026 0.024 0.026 0.027 0.026 0.028 0.027 0.029 0.029 0.029 0.028 0.029 0.031 0.029 0.029 0.031 0.029 0.031 0.031 0.029 0.030 0.030 0.031 0.030 0.032 0.032 4.3 4.2 8.2 9.8 11.4 8.1 11.5 16.3 14.5 13.4 18.0 16.6 17.4 22.0 24.3 20.6 21.4 23.2 27.5 24.6 26.4 26.5 27.5 27.1 27.7 25.5 25.5 25.0 32.9 24.8 28.9 31.6 31.2 29.5 32.5 31.4 39.6 34.1 36.2 38.9 37.0 0.338 0.346 0.344 0.335 0.328 0.337 0.350 0.354 0.342 0.331 0.332 0.353 0.376 0.374 0.361 0.356 0.356 0.366 0.367 0.369 0.363 0.361 0.359 0.346 0.323 0.303 0.294 0.299 0.304 0.317 0.325 0.318 0.315 0.307 0.302 0.303 0.301 0.294 0.275 0.270 0.266 −1.6 −2.1 −1.0 −2.7 −4.8 −7.5 −7.9 −6.8 −6.0 −7.9 −10.8 −13.4 −14.3 −15.0 −16.3 −19.3 −22.0 −23.9 −25.6 −28.5 −31.7 −35.4 −37.1 −39.0 −40.6 −43.1 −43.9 −43.0 −41.3 −44.9 −46.7 −48.7 −52.1 −56.1 −60.0 −63.7 −65.1 −67.5 −68.8 −71.0 −75.1 Data Sheet P15114EJ2V0DS S22 K 1.89 1.73 1.72 1.75 1.84 1.73 1.72 1.69 1.56 1.60 1.48 1.33 1.26 1.28 1.28 1.22 1.29 1.17 1.11 1.11 1.05 1.08 1.02 1.01 1.04 1.09 1.07 1.03 1.09 1.15 1.13 1.25 1.27 1.32 1.44 1.47 1.54 1.55 1.71 1.70 1.75 µPC8181TB PACKAGE DIMENSIONS 6-PIN SUPER MINIMOLD (UNIT: mm) 2.1±0.1 0.2+0.1 –0.05 0.65 0.65 1.3 Data Sheet P15114EJ2V0DS 0.15+0.1 –0.05 0 to 0.1 0.7 0.1 MIN. 0.9±0.1 2.0±0.2 1.25±0.1 13 µPC8181TB NOTES ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation). All the ground pins must be connected together with wide ground pattern to decrease impedance difference. (3) The bypass capacitor should be attached to the VCC pin. (4) The inductor must be attached between VCC and output pins. The inductance value should be determined in accordance with desired frequency. (5) The DC cut capacitor must be attached to input and output pins. RECOMMENDED SOLDERING CONDITIONS This product should be soldered under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your NEC sales representative. Soldering Method Soldering Conditions Recommended Condition Symbol Infrared Reflow Package peak temperature: 235°C or below Time: 30 seconds or less (at 210°C) Count: 3, Exposure limit: NoneNote IR35-00-3 VPS Package peak temperature: 215°C or below Time: 40 seconds or less (at 200°C) Count: 3, Exposure limit: NoneNote VP15-00-3 Wave Soldering Soldering bath temperature: 260°C or below Time: 10 seconds or less Count: 1, Exposure limit: NoneNote WS60-00-1 Partial Heating Pin temperature: 300°C or below Time: 3 seconds or less (per side of device) Exposure limit: NoneNote – Note After opening the dry pack, keep it in a place below 25°C and 65% RH for the allowable storage period. Caution Do not use different soldering methods together (except for partial heating). For details of recommended soldering conditions for surface mounting, refer to information document SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E). 14 Data Sheet P15114EJ2V0DS µPC8181TB [MEMO] Data Sheet P15114EJ2V0DS 15 µPC8181TB ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC SENSITIVE DEVICES • The information in this document is current as of July, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. • NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. • NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4