ETC UPC8178TK

DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUIT
µPC8178TK
SILICON MMIC LOW CURRENT AMPLIFIER
FOR MOBILE COMMUNICATIONS
DESCRIPTION
The µPC8178TK is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This
IC can realize low current consumption with external chip inductor which can not be realized on internal 50 Ω
wide band matched IC. µPC8178TK adopts 6-pin lead-less minimold package using same chip as the conventional
µPC8178TB in 6-pin super minimold.
TK suffix IC which is smaller package than TB suffix IC contributes to reduce mounting space by 50%.
This IC is manufactured using our 30 GHz fmax UHS0 (Ultra High Speed Process) silicon bipolar process.
FEATURES
• Low current consumption
: ICC = 1.9 mA TYP. @ VCC = 3.0 V
• Supply voltage
: VCC = 2.4 to 3.3 V
• Excellent isolation
: ISL = 40 dB TYP. @ f = 1.0 GHz
ISL = 41 dB TYP. @ f = 1.9 GHz
ISL = 42 dB TYP. @ f = 2.4 GHz
• Power gain
: GP = 11.0 dB TYP. @ f = 1.0 GHz
GP = 11.0 dB TYP. @ f = 1.9 GHz
GP = 11.0 dB TYP. @ f = 2.4 GHz
• Gain 1 dB compression output power : PO(1 dB) = −5.5 dBm TYP. @ f = 1.0 GHz
PO(1 dB) = −8.0 dBm TYP. @ f = 1.9 GHz
PO(1 dB) = −8.0 dBm TYP. @ f = 2.4 GHz
• Operating frequency
: 0.1 to 2.4 GHz (Output port LC matching)
• High-density surface mounting
: 6-pin lead-less minimold package (1.5 × 1.3 × 0.55 mm)
• Light weight
: 3 mg (Standard value)
APPLICAION
• Buffer amplifiers on 0.1 to 2.4 GHz mobile communications system
Caution electro-static sensitive devices.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10063EJ01V0DS (1st edition)
Date Published December 2001 CP(K)
Printed in Japan
 NEC Compound Semiconductor Devices 2001
µPC8178TK
ORDERING INFORMATION
Part Number
µPC8178TK-E2
Package
Marking
6-pin lead-less minimold
(1511)
6B
Supplying Form
• Embossed tape 8 mm wide
• Pin 1, 2, 3 face the perforation side of the tape
• Qty 5 kpcs/reel
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: µPC8178TK
PRODUCT LINE-UP (TA = +25°°C, VCC = Vout = 3.0 V, ZS = ZL = 50 Ω)
Parameter
1.0 GHz output port
matching frequency
1.66 GHz output port
matching frequency
1.9 GHz output port
matching frequency
2.4 GHz output port
matching frequency
ICC
(mA)
GP
(dB)
ISL
(dB)
PO(1dB)
(dBm)
GP
(dB)
ISL
(dB)
PO(1dB)
(dBm)
GP
(dB)
ISL
(dB)
PO(1dB)
(dBm)
GP
(dB)
ISL
(dB)
PO(1dB)
(dBm)
µPC8178TB
1.9
11.0
39
−4.0
−
−
−
11.5
40
−7.0
11.5
38
−7.5
C3B
µPC8178TK
1.9
11.0
40
−5.5
−
−
−
11.0
41
−8.0
11.0
42
−8.0
6B
µPC8179TB
4.0
13.5
44
+3.0
−
−
−
15.5
42
+1.5
15.5
41
+1.0
C3C
µPC8128TB
2.8
12.5
39
−4.0
13.0
39
−4.0
13.0
37
−4.0
−
−
−
C2P
µPC8151TB
4.2
12.5
38
+2.5
15.0
36
+1.5
15.0
34
+0.5
−
−
−
C2U
µPC8152TB
5.6
23.0
40
−4.5
19.5
38
−8.5
17.5
35
−8.5
−
−
−
C2V
Part No.
Marking
Remark Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail.
SYSTEM APPLICATION EXAMPLE
Location examples in digital cellular
Low Noise Tr.
RX
I
Q
DEMOD.
SW
÷N
PLL
PLL
I
0˚
TX
φ
PA
90˚
Q
These ICs can be added to your system around
parts, when you need more isolation or gain. The application
herein, however, shows only examples, therefore the application can depend on your kit evaluation.
2
Data Sheet PU10063EJ01V0DS
µPC8178TK
PIN CONNECTIONS
(Top View)
2
6B
1
(Bottom View)
3
6
6
1
5
5
2
4
4
3
Pin No.
Pin Name
1
INPUT
2
GND
3
GND
4
OUTPUT
5
GND
6
VCC
PIN EXPLANATION
Pin
No.
Pin
Name
Applied
Voltage
(V)
Pin
Voltage
Note
(V)
1
INPUT
−
0.90
2
3
5
GND
0
−
4
6
OUTPUT
VCC
Voltage
as same
as VCC
through
external
inductor
2.4 to 3.3
−
−
Function and Applications
Internal Equivalent Circuit
Signal input pin. A internal
matching circuit, configured with
resisters, enables 50 Ω connection
over a wide band. This pin must
be coupled to signal source with
capacitor for DC cut.
Ground pin. This pin should be
connected to system ground with
minimum inductance. Ground
pattern on the board should be
formed as wide as possible.
All the ground pins must be connected together with wide ground
pattern to decrease impedance
defference.
Signal output pin. This pin is designed as collector output. Due to
the high impedance output, this pin
should be externally equipped with
LC matching circuit to next stage.
For L, a size 1 005 chip inductor
can be chosen.
6
4
2
3
1
5
Power supply pin. This pin should
be externally equipped with
bypass capacitor to minimize its
impedance.
Note Pin voltage is measured at VCC = 3.0 V.
Data Sheet PU10063EJ01V0DS
3
µPC8178TK
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Test Conditions
Ratings
Unit
Supply Voltage
VCC
TA = +25°C, Pin 4, Pin 6
3.6
V
Circuit Current
ICC
TA = +25°C
15
mA
Power Dissipation
PD
TA = +85°C
232
mW
Operating Ambient Temperature
TA
−40 to +85
°C
Storage Temperature
Tstg
−55 to +150
°C
Input Power
Pin
+5
dBm
Note
TA = +25°C
Note Mounted on double-sided copper-clad 50 × 50 × 1.6 mm epoxy glass PWB
RECOMMENDED OPERATING RANGE
Parameter
Symbol
MIN.
TYP.
MAX.
Unit
Remarks
Supply Voltage
VCC
2.4
3.0
3.3
V
The same voltage should be applied to
pin 4 and pin 6.
Operating Ambient Temperature
TA
−40
+25
+85
°C
ELECTRICAL CHARACTERISTICS
(Unless otherwise specified, TA = +25°°C, VCC = Vout = 3.0 V, ZS = ZL = 50 Ω, at LC matched frequency)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Circuit Current
ICC
No signal
1.4
1.9
2.4
mA
Power Gain
GP
f = 1.0 GHz, Pin = −30 dBm
f = 1.9 GHz, Pin = −30 dBm
f = 2.4 GHz, Pin = −30 dBm
9.0
9.0
9.0
11.0
11.0
11.0
13.0
13.5
13.5
dB
Isolation
ISL
f = 1.0 GHz, Pin = −30 dBm
f = 1.9 GHz, Pin = −30 dBm
f = 2.4 GHz, Pin = −30 dBm
35
36
37
40
41
42
−
−
−
dB
PO(1 dB)
f = 1.0 GHz
f = 1.9 GHz
f = 2.4 GHz
−8.0
−11.0
−11.5
−5.5
−8.0
−8.0
−
−
−
dBm
Noise Figure
NF
f = 1.0 GHz
f = 1.9 GHz
f = 2.4 GHz
−
−
−
5.5
5.5
5.5
7.0
7.0
7.0
dB
Input Return Loss
RLin
f = 1.0 GHz, Pin = −30 dBm
f = 1.9 GHz, Pin = −30 dBm
f = 2.4 GHz, Pin = −30 dBm
4.0
5.0
6.5
7.0
8.0
9.5
−
−
−
dB
Gain 1 dB Compression Output
Power
4
Data Sheet PU10063EJ01V0DS
µPC8178TK
TEST CIRCUITS
<1> f = 1.0 GHz
VCC
C3
C4
Output port matching circuit
L1
6
50 Ω
C1
C2
4
1
IN
C3 50 Ω
OUT
2, 3, 5
<2> f = 1.9 GHz
VCC
C4
C6
C5
Output port matching circuit
L1
6
50 Ω
C1
C2
4
1
IN
C3 50 Ω
OUT
2, 3, 5
<3> f = 2.4 GHz
VCC
C3
C5
C4
Output port matching circuit
L1
6
50 Ω
IN
C1
50 Ω
4
1
OUT
L2
C2
2, 3, 5
Data Sheet PU10063EJ01V0DS
5
µPC8178TK
ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD
<1> f = 1.0 GHz
VCC
OUT
C4
C5
Top View
L1
6B
C1
Mounting direction
C2
C3
IN
µPC8178TK/µPC8179TK
COMPONENT LIST
1.0 GHz Output Port Matching
C1, C3
1 000 pF
C2
0.75 pF
C4
10 pF
C5
20 pF
L1
12 nH
6
Data Sheet PU10063EJ01V0DS
µPC8178TK
<2> f = 1.9 GHz
VCC
C5
OUT
Top View
C6
C4
L1
6B
C1
Mounting direction
C2
C3
IN
µPC8178TK/µPC8179TK
COMPONENT LIST
1.9 GHz Output Port Matching
C1, C3, C5, C6
1 000 pF
C2
0.5 pF
C4
8 pF
L1
2.7 nH
Data Sheet PU10063EJ01V0DS
7
µPC8178TK
<3> f = 2.4 GHz
VCC
C4
OUT
Top View
C3
L2
Mounting direction
C5
L1
6B
C1
C2
IN
µPC8178TK/µPC8179TK
COMPONENT LIST
2.4 GHz Output Port Matching
C1, C2, C4, C5
1 000 pF
C3
10 pF
L1
1.8 nH
L2
2.7 nH
Remarks 1. 42 × 35 × 0.4 mm double-sided copper-clad polyimide board
2. Back side: GND pattern
3. Gold plated on pattern
4.
8
{
{: Through holes
Data Sheet PU10063EJ01V0DS
µPC8178TK
PACKAGE DIMENSIONS
6-PIN LEAD-LESS MINIMOLD (1511) (UNIT: mm)
(Bottom View)
(0.48) (0.48)
(0.96)
1.5±0.1
1.1±0.1
0.16±0.05
1.3±0.05
(0.9)
0.11+0.1
–0.05
0.55±0.03
0.2±0.1
Remark ( ): reference
Data Sheet PU10063EJ01V0DS
9
µPC8178TK
NOTE ON CORRECT USE
(1) Observe precautions for handling because of electro-static sensitive devices.
(2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation).
All the ground pins must be connected together with wide ground pattern to decrease impedance difference.
(3) The bypass capacitor should be attached to VCC line.
(4) The inductor (L) should be attached between output and VCC pins. The L and series capacitor (C) values
should be adjusted for applied frequency to match impedance to next stage.
(5) The DC capacitor must be attached to input pin.
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions.
For soldering
methods and conditions other than those recommended below, contact your nearby sales office.
Soldering Method
Soldering Conditions
Condition Symbol
Infrared Reflow
Peak temperature (package surface temperature)
Time at peak temperature
Time at temperature of 220°C or higher
Preheating time at 120 to 180°C
Maximum number of reflow processes
Maximum chlorine content of rosin flux (% mass)
: 260°C or below
: 10 seconds or less
: 60 seconds or less
: 120±30 seconds
: 3 times
: 0.2%(Wt.) or below
IR260
VPS
Peak temperature (package surface temperature)
Time at temperature of 200°C or higher
Preheating time at 120 to 150°C
Maximum number of reflow processes
Maximum chlorine content of rosin flux (% mass)
: 215°C or below
: 25 to 40 seconds
: 30 to 60 seconds
: 3 times
: 0.2%(Wt.) or below
VP215
Wave Soldering
Peak temperature (molten solder temperature)
Time at peak temperature
Preheating temperature (package surface temperature)
Maximum number of flow processes
Maximum chlorine content of rosin flux (% mass)
: 260°C or below
: 10 seconds or less
: 120°C or below
: 1 time
: 0.2%(Wt.) or below
WS260
Partial Heating
Peak temperature (pin temperature)
Soldering time (per side of device)
Maximum chlorine content of rosin flux (% mass)
: 350°C or below
: 3 seconds or less
: 0.2%(Wt.) or below
HS350
Caution Do not use different soldering methods together (except for partial heating).
10
Data Sheet PU10063EJ01V0DS
µPC8178TK
• The information in this document is current as of December, 2001. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
• NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
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agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
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semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
• NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
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The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
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(Note)
(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.
and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4 - 0110
Data Sheet PU10063EJ01V0DS
11
µPC8178TK
Business issue
NEC Compound Semiconductor Devices, Ltd.
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Technical issue
NEC Compound Semiconductor Devices, Ltd.
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Sales Engineering Group, Sales Division
E-mail: [email protected] FAX: +81-44-435-1918
0110