DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC8178TK SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The µPC8178TK is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC can realize low current consumption with external chip inductor which can not be realized on internal 50 Ω wide band matched IC. µPC8178TK adopts 6-pin lead-less minimold package using same chip as the conventional µPC8178TB in 6-pin super minimold. TK suffix IC which is smaller package than TB suffix IC contributes to reduce mounting space by 50%. This IC is manufactured using our 30 GHz fmax UHS0 (Ultra High Speed Process) silicon bipolar process. FEATURES • Low current consumption : ICC = 1.9 mA TYP. @ VCC = 3.0 V • Supply voltage : VCC = 2.4 to 3.3 V • Excellent isolation : ISL = 40 dB TYP. @ f = 1.0 GHz ISL = 41 dB TYP. @ f = 1.9 GHz ISL = 42 dB TYP. @ f = 2.4 GHz • Power gain : GP = 11.0 dB TYP. @ f = 1.0 GHz GP = 11.0 dB TYP. @ f = 1.9 GHz GP = 11.0 dB TYP. @ f = 2.4 GHz • Gain 1 dB compression output power : PO(1 dB) = −5.5 dBm TYP. @ f = 1.0 GHz PO(1 dB) = −8.0 dBm TYP. @ f = 1.9 GHz PO(1 dB) = −8.0 dBm TYP. @ f = 2.4 GHz • Operating frequency : 0.1 to 2.4 GHz (Output port LC matching) • High-density surface mounting : 6-pin lead-less minimold package (1.5 × 1.3 × 0.55 mm) • Light weight : 3 mg (Standard value) APPLICAION • Buffer amplifiers on 0.1 to 2.4 GHz mobile communications system Caution electro-static sensitive devices. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. Document No. PU10063EJ01V0DS (1st edition) Date Published December 2001 CP(K) Printed in Japan NEC Compound Semiconductor Devices 2001 µPC8178TK ORDERING INFORMATION Part Number µPC8178TK-E2 Package Marking 6-pin lead-less minimold (1511) 6B Supplying Form • Embossed tape 8 mm wide • Pin 1, 2, 3 face the perforation side of the tape • Qty 5 kpcs/reel Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: µPC8178TK PRODUCT LINE-UP (TA = +25°°C, VCC = Vout = 3.0 V, ZS = ZL = 50 Ω) Parameter 1.0 GHz output port matching frequency 1.66 GHz output port matching frequency 1.9 GHz output port matching frequency 2.4 GHz output port matching frequency ICC (mA) GP (dB) ISL (dB) PO(1dB) (dBm) GP (dB) ISL (dB) PO(1dB) (dBm) GP (dB) ISL (dB) PO(1dB) (dBm) GP (dB) ISL (dB) PO(1dB) (dBm) µPC8178TB 1.9 11.0 39 −4.0 − − − 11.5 40 −7.0 11.5 38 −7.5 C3B µPC8178TK 1.9 11.0 40 −5.5 − − − 11.0 41 −8.0 11.0 42 −8.0 6B µPC8179TB 4.0 13.5 44 +3.0 − − − 15.5 42 +1.5 15.5 41 +1.0 C3C µPC8128TB 2.8 12.5 39 −4.0 13.0 39 −4.0 13.0 37 −4.0 − − − C2P µPC8151TB 4.2 12.5 38 +2.5 15.0 36 +1.5 15.0 34 +0.5 − − − C2U µPC8152TB 5.6 23.0 40 −4.5 19.5 38 −8.5 17.5 35 −8.5 − − − C2V Part No. Marking Remark Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail. SYSTEM APPLICATION EXAMPLE Location examples in digital cellular Low Noise Tr. RX I Q DEMOD. SW ÷N PLL PLL I 0˚ TX φ PA 90˚ Q These ICs can be added to your system around parts, when you need more isolation or gain. The application herein, however, shows only examples, therefore the application can depend on your kit evaluation. 2 Data Sheet PU10063EJ01V0DS µPC8178TK PIN CONNECTIONS (Top View) 2 6B 1 (Bottom View) 3 6 6 1 5 5 2 4 4 3 Pin No. Pin Name 1 INPUT 2 GND 3 GND 4 OUTPUT 5 GND 6 VCC PIN EXPLANATION Pin No. Pin Name Applied Voltage (V) Pin Voltage Note (V) 1 INPUT − 0.90 2 3 5 GND 0 − 4 6 OUTPUT VCC Voltage as same as VCC through external inductor 2.4 to 3.3 − − Function and Applications Internal Equivalent Circuit Signal input pin. A internal matching circuit, configured with resisters, enables 50 Ω connection over a wide band. This pin must be coupled to signal source with capacitor for DC cut. Ground pin. This pin should be connected to system ground with minimum inductance. Ground pattern on the board should be formed as wide as possible. All the ground pins must be connected together with wide ground pattern to decrease impedance defference. Signal output pin. This pin is designed as collector output. Due to the high impedance output, this pin should be externally equipped with LC matching circuit to next stage. For L, a size 1 005 chip inductor can be chosen. 6 4 2 3 1 5 Power supply pin. This pin should be externally equipped with bypass capacitor to minimize its impedance. Note Pin voltage is measured at VCC = 3.0 V. Data Sheet PU10063EJ01V0DS 3 µPC8178TK ABSOLUTE MAXIMUM RATINGS Parameter Symbol Test Conditions Ratings Unit Supply Voltage VCC TA = +25°C, Pin 4, Pin 6 3.6 V Circuit Current ICC TA = +25°C 15 mA Power Dissipation PD TA = +85°C 232 mW Operating Ambient Temperature TA −40 to +85 °C Storage Temperature Tstg −55 to +150 °C Input Power Pin +5 dBm Note TA = +25°C Note Mounted on double-sided copper-clad 50 × 50 × 1.6 mm epoxy glass PWB RECOMMENDED OPERATING RANGE Parameter Symbol MIN. TYP. MAX. Unit Remarks Supply Voltage VCC 2.4 3.0 3.3 V The same voltage should be applied to pin 4 and pin 6. Operating Ambient Temperature TA −40 +25 +85 °C ELECTRICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°°C, VCC = Vout = 3.0 V, ZS = ZL = 50 Ω, at LC matched frequency) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Circuit Current ICC No signal 1.4 1.9 2.4 mA Power Gain GP f = 1.0 GHz, Pin = −30 dBm f = 1.9 GHz, Pin = −30 dBm f = 2.4 GHz, Pin = −30 dBm 9.0 9.0 9.0 11.0 11.0 11.0 13.0 13.5 13.5 dB Isolation ISL f = 1.0 GHz, Pin = −30 dBm f = 1.9 GHz, Pin = −30 dBm f = 2.4 GHz, Pin = −30 dBm 35 36 37 40 41 42 − − − dB PO(1 dB) f = 1.0 GHz f = 1.9 GHz f = 2.4 GHz −8.0 −11.0 −11.5 −5.5 −8.0 −8.0 − − − dBm Noise Figure NF f = 1.0 GHz f = 1.9 GHz f = 2.4 GHz − − − 5.5 5.5 5.5 7.0 7.0 7.0 dB Input Return Loss RLin f = 1.0 GHz, Pin = −30 dBm f = 1.9 GHz, Pin = −30 dBm f = 2.4 GHz, Pin = −30 dBm 4.0 5.0 6.5 7.0 8.0 9.5 − − − dB Gain 1 dB Compression Output Power 4 Data Sheet PU10063EJ01V0DS µPC8178TK TEST CIRCUITS <1> f = 1.0 GHz VCC C3 C4 Output port matching circuit L1 6 50 Ω C1 C2 4 1 IN C3 50 Ω OUT 2, 3, 5 <2> f = 1.9 GHz VCC C4 C6 C5 Output port matching circuit L1 6 50 Ω C1 C2 4 1 IN C3 50 Ω OUT 2, 3, 5 <3> f = 2.4 GHz VCC C3 C5 C4 Output port matching circuit L1 6 50 Ω IN C1 50 Ω 4 1 OUT L2 C2 2, 3, 5 Data Sheet PU10063EJ01V0DS 5 µPC8178TK ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD <1> f = 1.0 GHz VCC OUT C4 C5 Top View L1 6B C1 Mounting direction C2 C3 IN µPC8178TK/µPC8179TK COMPONENT LIST 1.0 GHz Output Port Matching C1, C3 1 000 pF C2 0.75 pF C4 10 pF C5 20 pF L1 12 nH 6 Data Sheet PU10063EJ01V0DS µPC8178TK <2> f = 1.9 GHz VCC C5 OUT Top View C6 C4 L1 6B C1 Mounting direction C2 C3 IN µPC8178TK/µPC8179TK COMPONENT LIST 1.9 GHz Output Port Matching C1, C3, C5, C6 1 000 pF C2 0.5 pF C4 8 pF L1 2.7 nH Data Sheet PU10063EJ01V0DS 7 µPC8178TK <3> f = 2.4 GHz VCC C4 OUT Top View C3 L2 Mounting direction C5 L1 6B C1 C2 IN µPC8178TK/µPC8179TK COMPONENT LIST 2.4 GHz Output Port Matching C1, C2, C4, C5 1 000 pF C3 10 pF L1 1.8 nH L2 2.7 nH Remarks 1. 42 × 35 × 0.4 mm double-sided copper-clad polyimide board 2. Back side: GND pattern 3. Gold plated on pattern 4. 8 { {: Through holes Data Sheet PU10063EJ01V0DS µPC8178TK PACKAGE DIMENSIONS 6-PIN LEAD-LESS MINIMOLD (1511) (UNIT: mm) (Bottom View) (0.48) (0.48) (0.96) 1.5±0.1 1.1±0.1 0.16±0.05 1.3±0.05 (0.9) 0.11+0.1 –0.05 0.55±0.03 0.2±0.1 Remark ( ): reference Data Sheet PU10063EJ01V0DS 9 µPC8178TK NOTE ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation). All the ground pins must be connected together with wide ground pattern to decrease impedance difference. (3) The bypass capacitor should be attached to VCC line. (4) The inductor (L) should be attached between output and VCC pins. The L and series capacitor (C) values should be adjusted for applied frequency to match impedance to next stage. (5) The DC capacitor must be attached to input pin. RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Soldering Conditions Condition Symbol Infrared Reflow Peak temperature (package surface temperature) Time at peak temperature Time at temperature of 220°C or higher Preheating time at 120 to 180°C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) : 260°C or below : 10 seconds or less : 60 seconds or less : 120±30 seconds : 3 times : 0.2%(Wt.) or below IR260 VPS Peak temperature (package surface temperature) Time at temperature of 200°C or higher Preheating time at 120 to 150°C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) : 215°C or below : 25 to 40 seconds : 30 to 60 seconds : 3 times : 0.2%(Wt.) or below VP215 Wave Soldering Peak temperature (molten solder temperature) Time at peak temperature Preheating temperature (package surface temperature) Maximum number of flow processes Maximum chlorine content of rosin flux (% mass) : 260°C or below : 10 seconds or less : 120°C or below : 1 time : 0.2%(Wt.) or below WS260 Partial Heating Peak temperature (pin temperature) Soldering time (per side of device) Maximum chlorine content of rosin flux (% mass) : 350°C or below : 3 seconds or less : 0.2%(Wt.) or below HS350 Caution Do not use different soldering methods together (except for partial heating). 10 Data Sheet PU10063EJ01V0DS µPC8178TK • The information in this document is current as of December, 2001. 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M8E 00. 4 - 0110 Data Sheet PU10063EJ01V0DS 11 µPC8178TK Business issue NEC Compound Semiconductor Devices, Ltd. 5th Sales Group, Sales Division TEL: +81-3-3798-6372 FAX: +81-3-3798-6783 E-mail: [email protected] NEC Compound Semiconductor Devices Hong Kong Limited Hong Kong Head Office FAX: +852-3107-7309 TEL: +852-3107-7303 Taipei Branch Office TEL: +886-2-8712-0478 FAX: +886-2-2545-3859 Korea Branch Office FAX: +82-2-528-0302 TEL: +82-2-528-0301 NEC Electron Devices European Operations http://www.nec.de/ TEL: +49-211-6503-101 FAX: +49-211-6503-487 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 Technical issue NEC Compound Semiconductor Devices, Ltd. http://www.csd-nec.com/ Sales Engineering Group, Sales Division E-mail: [email protected] FAX: +81-44-435-1918 0110