DATA SHEET GaAs INTEGRATED CIRCUIT µPG2214TB L, S-BAND SPDT SWITCH DESCRIPTION The µPG2214TB is a GaAs MMIC for L, S-band SPDT (Single Pole Double Throw) switch which was developed for mobile phone and another L, S-band application. This device can operate 2 control switching by control voltage 1.8 to 5.3 V. This device can operate frequency from 0.05 to 3.0 GHz, having the low insertion loss and high isolation. This device is housed in a 6-pin super minimold package. And this package is able to high-density surface mounting. FEATURES • Switch control voltage • • • • : Vcont (H) = 1.8 to 5.3 V (3.0 V TYP.) : Vcont (L) = −0.2 to +0.2 V (0 V TYP.) Low insertion loss : Lins1 = 0.25 dB TYP. @ f = 0.05 to 0.5 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V : Lins2 = 0.25 dB TYP. @ f = 0.5 to 1.0 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V : Lins3 = 0.30 dB TYP. @ f = 1.0 to 2.0 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V : Lins4 = 0.35 dB TYP. @ f = 2.0 to 2.5 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V : Lins5 = 0.35 dB TYP. @ f = 2.5 to 3.0 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V High isolation : ISL1 = 32 dB TYP. @ f = 0.05 to 0.5 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V : ISL2 = 28 dB TYP. @ f = 0.5 to 1.0 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V : ISL3 = 27 dB TYP. @ f = 1.0 to 2.0 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V : ISL4 = 26 dB TYP. @ f = 2.0 to 2.5 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V : ISL5 = 24 dB TYP. @ f = 2.5 to 3.0 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V Handling power : Pin (1 dB) = +27.0 dBm TYP. @ f = 0.5 to 3.0 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V : Pin (1 dB) = +20.0 dBm TYP. @ f = 0.5 to 3.0 GHz, Vcont (H) = 1.8 V, Vcont (L) = 0 V High-density surface mounting : 6-pin super minimold package (2.0 × 1.25 × 0.9 mm) APPLICATIONS • L, S-band digital cellular or cordless telephone TM • W-LAN, WLL and Bluetooth etc. ORDERING INFORMATION Part Number µPG2214TB-E4 Package Marking 6-pin super minimold (2012) G4J Supplying Form • Embossed tape 8 mm wide • Pin 4, 5, 6 face the perforation side of the tape • Qty 3 kpcs/reel Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: µPG2214TB Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. Document No. PG10477EJ03V0DS (3rd edition) Date Published October 2004 CP(K) Printed in Japan The mark shows major revised points. NEC Compound Semiconductor Devices, Ltd. 2004 µPG2214TB PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM (Top View) (Top View) 1 G4J 2 (Bottom View) 6 1 6 6 1 5 2 5 5 2 4 3 3 4 4 3 Pin No. Pin Name 1 OUTPUT1 2 GND 3 OUTPUT2 4 Vcont2 5 INPUT 6 Vcont1 TRUTH TABLE Vcont1 Vcont2 INPUT−OUTPUT1 INPUT−OUTPUT2 Low High ON OFF High Low OFF ON ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified) Parameter Switch Control Voltage Symbol Ratings Vcont +6.0 Unit Note V Input Power Pin +30 dBm Operating Ambient Temperature TA −45 to +85 °C Storage Temperature Tstg −55 to +150 °C Note Vcont1 − Vcont2 ≤ 6.0 V RECOMMENDED OPERATING RANGE (TA = +25°C, unless otherwise specified) Parameter Symbol MIN. TYP. MAX. Unit Switch Control Voltage (H) Vcont (H) 1.8 3.0 5.3 V Switch Control Voltage (L) Vcont (L) −0.2 0 0.2 V 2 Data Sheet PG10477EJ03V0DS µPG2214TB ELECTRICAL CHARACTERISTICS (TA = +25°C, Vcont (H) = 3.0 V, Vcont (L) = 0 V, DC cut capacitors = 100 pF, unless otherwise specified) Parameter Symbol Test Conditions Note 1 MIN. TYP. MAX. Unit − 0.25 0.45 dB Insertion Loss 1 Lins1 f = 0.05 to 0.5 GHz Insertion Loss 2 Lins2 f = 0.5 to 1.0 GHz − 0.25 0.45 dB Insertion Loss 3 Lins3 f = 1.0 to 2.0 GHz − 0.30 0.50 dB Insertion Loss 4 Lins4 f = 2.0 to 2.5 GHz − 0.35 0.55 dB Insertion Loss 5 Lins5 f = 2.5 to 3.0 GHz − 0.35 0.60 dB 29 32 − dB Note 1 Isolation 1 ISL1 f = 0.05 to 0.5 GHz Isolation 2 ISL2 f = 0.5 to 1.0 GHz 25 28 − dB Isolation 3 ISL3 f = 1.0 to 2.0 GHz 24 27 − dB Isolation 4 ISL4 f = 2.0 to 2.5 GHz 23 26 − dB Isolation 5 ISL5 f = 2.5 to 3.0 GHz 21 24 − dB 15 20 − dB 15 20 − dB 15 20 − dB 15 20 − dB +21.0 +23.0 − dBm f = 0.5 to 3.0 GHz − +23.0 − dBm f = 0.5 to 3.0 GHz − +27.0 − dBm f = 2.0 GHz, Pin = +15 dBm − −55 −47 dBc f = 2.5 GHz, Pin = +15 dBm − −55 −47 dBc f = 2.0 GHz, Pin = +15 dBm − −55 −47 dBc f = 2.5 GHz, Pin = +15 dBm − −55 −47 dBc f = 0.5 to 3.0 GHz, 2 tone, − +58 − dBm − 4 20 µA − 20 200 ns Input Return Loss 1 RLin1 f = 0.05 to 0.5 GHz Input Return Loss 2 RLin2 f = 0.5 to 3.0 GHz Output Return Loss 1 RLout1 f = 0.05 to 0.5 GHz Output Return Loss 2 RLout2 f = 0.5 to 3.0 GHz 0.1 dB Loss Compression Input Power 1 dB Loss Compression Input Power Pin (0.1 dB) Note 2 Pin (1 dB) Note 1 Note 1 f = 2.0/2.5 GHz Note 3 2nd Harmonics 3rd Harmonics Intermodulation Intercept Point 2f0 3f0 IIP3 Pin = +16 dBm, 5 MHz spicing Switch Control Current Icont Switch Control Speed tSW 50% CTL to 90/10% RF Notes 1. DC cut capacitors = 1 000 pF at f = 0.05 to 0.5 GHz 2. Pin (0.1 dB) is measured the input power level when the insertion loss increases more 0.1 dB than that of linear range. 3. Pin (1 dB) is measured the input power level when the insertion loss increases more 1 dB than that of linear range. Data Sheet PG10477EJ03V0DS 3 µPG2214TB ELECTRICAL CHARACTERISTICS (TA = +25°C, Vcont (H) = 1.8 V, Vcont (L) = 0 V, DC cut capacitors = 100 pF, unless otherwise specified) Parameter Symbol Test Conditions Note 1 MIN. TYP. MAX. Unit − 0.25 0.50 dB Insertion Loss 6 Lins6 f = 0.05 to 0.5 GHz Insertion Loss 7 Lins7 f = 0.5 to 1.0 GHz − 0.25 0.50 dB Insertion Loss 8 Lins8 f = 1.0 to 2.0 GHz − 0.30 0.55 dB Insertion Loss 9 Lins9 f = 2.0 to 2.5 GHz − 0.35 0.60 dB Insertion Loss 10 Lins10 f = 2.5 to 3.0 GHz − 0.35 0.65 dB 27 30 − dB Note 1 Isolation 6 ISL6 f = 0.05 to 0.5 GHz Isolation 7 ISL7 f = 0.5 to 2.0 GHz 23 27 − dB Isolation 8 ISL8 f = 2.0 to 2.5 GHz 21 25 − dB Isolation 9 ISL9 f = 2.5 to 3.0 GHz 20 24 − dB Input Return Loss 3 RLin3 f = 0.05 to 3.0 GHz Note 1 15 20 − dB f = 0.05 to 3.0 GHz Note 1 15 20 − dB +14.0 +17.0 − dBm f = 0.5 to 3.0 GHz − +17.0 − dBm f = 0.5 to 3.0 GHz − +20.0 − dBm − 4 20 µA − 20 200 ns Output Return Loss 3 0.1 dB Loss Compression Input Power Pin (0.1 dB) Note 2 1 dB Loss Compression Input Power RLout3 Pin (1 dB) f = 2.0/2.5 GHz Note 3 Switch Control Current Icont Switch Control Speed tSW 50% CTL to 90/10% RF Notes 1. DC cut capacitors = 1 000 pF at f = 0.05 to 0.5 GHz 2. Pin (0.1 dB) is measured the input power level when the insertion loss increases more 0.1 dB than that of linear range. 3. Pin (1 dB) is measured the input power level when the insertion loss increases more 1 dB than that of linear range. Caution This device is used it is necessary to use DC cut capacitors. The value of DC cut capacitors should be chosen to accommodate the frequency of operation, bandwidth, switching speed and the condition with actual board of your system. The range of recommended DC cut capacitor value is less than 100 pF. 4 Data Sheet PG10477EJ03V0DS µPG2214TB EVALUATION CIRCUIT OUTPUT1 OUTPUT2 C0 Note C0 3 4 2 5 1 6 C0 1 000 pF 1 000 pF Vcont2 INPUT Vcont1 Note C0 : 0.05 to 0.5 GHz 1 000 pF : 0.5 to 3.0 GHz 100 pF The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. Data Sheet PG10477EJ03V0DS 5 µPG2214TB ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD Vcont2 6pin SMM SPDT SW Vc2 OUTPUT2 C2 C 2 C 4 OUT 2 INPUT G4J C1 C3 C1 C1 IN C 1 C 5 C2 OUT 1 OUTPUT1 Vc1 Vcont1 USING THE NEC EVALUATION BOARD Symbol C1, C2, C3 C4, C5 6 Values 100 pF 1 000 pF Data Sheet PG10477EJ03V0DS µPG2214TB TYPICAL CHARACTERISTICS (TA = +25°C, Vcont (H) = 3.0 V, Vcont (L) = 0 V, DC cut capacitors = 100 pF, unless otherwise specified) INPUT-OUTPUT1 INSERTION LOSS vs. FREQUENCY 1: –0.533 dB 1.0 GHz 2: –0.674 dB 1.5 GHz 3: –0.830 dB 2.0 GHz 4: –0.939 dB 2.5 GHz 5: –1.142 dB 3.0 GHz Insertion Loss Lins (dB) 4 3 2 1 0 1 –1 2 –2 3 4 5 –3 5 3 2 1 0 –4 2.5 3.0 3.5 3 4 5 1.5 2.0 2.5 3.0 –3 –5 0.5 2.0 2 –2 –4 1.5 1 –1 –5 0.5 1.0 1: –0.533 dB 1.0 GHz 2: –0.688 dB 1.5 GHz 3: –0.860 dB 2.0 GHz 4: –0.949 dB 2.5 GHz 5: –1.152 dB 3.0 GHz 4 Insertion Loss Lins (dB) 5 INPUT-OUTPUT2 INSERTION LOSS vs. FREQUENCY 1.0 3.5 Frequency f (GHz) Frequency f (GHz) Remark The graphs indicate nominal characteristics. Caution These characteristics values include the losses of the NEC evaluation board. Data Sheet PG10477EJ03V0DS 7 µPG2214TB INPUT-OUTPUT1 ISOLATION vs. FREQUENCY 1: –29.439 dB 1.0 GHz 2: –29.405 dB 1.5 GHz 3: –31.854 dB 2.0 GHz 4: –36.656 dB 2.5 GHz 5: –35.398 dB 3.0 GHz 40 Isolation ISL (dB) 30 20 10 0 –10 –20 1 50 30 –30 2 1.0 1.5 3 2.0 4 2.5 0 –10 –20 3.0 2 –40 5 –50 0.5 3.5 1.0 1.5 3 2.0 4 5 2.5 3.0 3.5 INPUT-OUTPUT1 INPUT RETURN LOSS vs. FREQUENCY INPUT-OUTPUT2 INPUT RETURN LOSS vs. FREQUENCY 30 20 10 0 –10 –20 1 2 –30 3 4 5 50 –50 0.5 1: –29.277 dB 1.0 GHz 2: –22.261 dB 1.5 GHz 3: –19.021 dB 2.0 GHz 4: –19.468 dB 2.5 GHz 5: –24.914 dB 3.0 GHz 40 Input Return Loss RLin (dB) 1: –28.279 dB 1.0 GHz 2: –22.334 dB 1.5 GHz 3: –19.341 dB 2.0 GHz 4: –19.843 dB 2.5 GHz 5: –24.355 dB 3.0 GHz 30 20 10 0 –10 –20 1 2 –30 3 4 5 –40 –40 1.0 1.5 2.0 2.5 3.0 –50 0.5 3.5 1.0 1.5 2.0 2.5 3.0 3.5 Frequency f (GHz) Frequency f (GHz) INPUT-OUTPUT1 OUTPUT RETURN LOSS vs. FREQUENCY INPUT-OUTPUT2 OUTPUT RETURN LOSS vs. FREQUENCY 1: –30.808 dB 1.0 GHz 2: –22.826 dB 1.5 GHz 3: –19.596 dB 2.0 GHz 4: –19.41 dB 2.5 GHz 5: –22.554 dB 3.0 GHz 40 30 20 10 0 –10 –20 1 –30 2 3 4 5 –40 –50 0.5 1.0 1.5 2.0 2.5 3.0 3.5 50 Output Return Loss RLout (dB) 50 1: –29.853 dB 1.0 GHz 2: –22.191 dB 1.5 GHz 3: –18.863 dB 2.0 GHz 4: –18.563 dB 2.5 GHz 5: –23.874 dB 3.0 GHz 40 30 20 10 0 –10 –20 1 2 –30 3 4 2.0 2.5 5 –40 –50 0.5 Frequency f (GHz) 1.0 1.5 Frequency f (GHz) Remark The graphs indicate nominal characteristics. 8 1 Frequency f (GHz) 40 Input Return Loss RLin (dB) 10 Frequency f (GHz) 50 Output Return Loss RLout (dB) 20 –30 –40 –50 0.5 1: –29.393 dB 1.0 GHz 2: –29.243 dB 1.5 GHz 3: –31.255 dB 2.0 GHz 4: –34.569 dB 2.5 GHz 5: –34.949 dB 3.0 GHz 40 Isolation ISL (dB) 50 INPUT-OUTPUT2 ISOLATION vs. FREQUENCY Data Sheet PG10477EJ03V0DS 3.0 3.5 µPG2214TB OUTPUT POWER vs. INPUT POWER 30 Output Power Pout (dBm) f = 2 GHz 25 20 15 10 5 10 12 14 16 18 20 22 24 26 28 30 Input Power Pin (dBm) Remark The graph indicate nominal characteristics. Data Sheet PG10477EJ03V0DS 9 µPG2214TB PACKAGE DIMENSIONS 6-PIN SUPER MINIMOLD (UNIT: mm) 2.1±0.1 0.2+0.1 –0.05 0.65 0.65 1.3 2.0±0.2 1.25±0.1 10 Data Sheet PG10477EJ03V0DS 0.15+0.1 –0.05 0 to 0.1 0.7 0.9±0.1 0.1 MIN. µPG2214TB RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Infrared Reflow VPS Wave Soldering Soldering Conditions Condition Symbol Peak temperature (package surface temperature) : 260°C or below Time at peak temperature : 10 seconds or less Time at temperature of 220°C or higher : 60 seconds or less Preheating time at 120 to 180°C : 120±30 seconds Maximum number of reflow processes : 3 times Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below Peak temperature (package surface temperature) : 215°C or below Time at temperature of 200°C or higher : 25 to 40 seconds Preheating time at 120 to 150°C : 30 to 60 seconds Maximum number of reflow processes : 3 times Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below Peak temperature (molten solder temperature) : 260°C or below Time at peak temperature : 10 seconds or less IR260 VP215 WS260 Preheating temperature (package surface temperature) : 120°C or below Partial Heating Maximum number of flow processes : 1 time Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below Peak temperature (pin temperature) : 350°C or below Soldering time (per side of device) : 3 seconds or less Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below HS350 Caution Do not use different soldering methods together (except for partial heating). Data Sheet PG10477EJ03V0DS 11 µPG2214TB Bluetooth is a trademark owned by Bluetooth SIG, Inc., U.S.A. • The information in this document is current as of October, 2004. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. 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(Note) (1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd. and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4 - 0110 12 Data Sheet PG10477EJ03V0DS µPG2214TB Caution GaAs Products This product uses gallium arsenide (GaAs). GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. • Follow related laws and ordinances when disposing of the product. If there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. Commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. Exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until final disposal. • Do not burn, destroy, cut, crush, or chemically dissolve the product. • Do not lick the product or in any way allow it to enter the mouth. 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