DATA SHEET GaAs INTEGRATED CIRCUIT µPG2010TB L-BAND SPDT SWITCH DESCRIPTION The µPG2010TB is GaAs MMIC for L-band SPDT (Single Pole Double Throw) switch which were developed for mobile phone and another L-band application. This device can operate frequency from 0.5 to 2.5 GHz, having the low insertion loss and high isolation. This device is housed in a 6-pin super minimold package. And this package is able to high-density surface mounting. FEATURES • Supply voltage : VDD = 2.7 to 3.0 V (2.8 V TYP.) • Switch control voltage : Vcont (H) = 2.7 to 3.0 V (2.8 V TYP.) : Vcont (L) = −0.2 to +0.2 V (0 V TYP.) • Low insertion loss : LINS1 = 0.25 dB TYP. @ f = 0.5 to 1.0 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V : LINS2 = 0.30 dB TYP. @ f = 2.0 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V : LINS3 = 0.35 dB TYP. @ f = 2.5 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V (Reference value) • High isolation : ISL1 = 28 dB TYP. @ f = 0.5 to 2.0 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V : ISL2 = 25 dB TYP. @ f = 2.5 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V (Reference value) • High power : Pin (0.1 dB) = +33.0 dBm TYP. @ f = 1.0 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V • High-density surface mounting : 6-pin super minimold package (2.0 × 1.25 × 0.9 mm) APPLICATIONS • L-band digital cellular or cordless telephone • PCS, W-LAN, WLL and BluetoothTM etc. ORDERING INFORMATION Part Number µPG2010TB-E3 Package 6-pin super minimold Marking G2Y Supplying Form • Embossed tape 8 mm wide • Pin 1, 2, 3 face the perforation side of the tape • Qty 3 kpcs/reel Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: µPG2010TB Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. Document No. PG10317EJ02V0DS (2nd edition) Date Published October 2003 CP(K) Printed in Japan The mark shows major revised points. NEC Compound Semiconductor Devices 2003 µPG2010TB PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM (Top View) G2Y 3 (Top View) 2 1 (Bottom View) 4 3 4 4 3 5 2 5 5 2 6 1 6 6 1 Pin No. Pin Name 1 OUTPUT1 2 GND 3 OUTPUT2 4 Vcont 5 INPUT 6 VDD TRUTH TABLE Vcont INPUT−OUTPUT1 INPUT−OUTPUT2 Low ON OFF High OFF ON ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified) Parameter Symbol Ratings Unit Supply Voltage VDD 6.0 V Switch Control Voltage Vcont 6.0 V Pin +36 dBm Input Power 150 Note Power Dissipation PD mW Operating Ambient Temperature TA −45 to +85 °C Storage Temperature Tstg −55 to +150 °C Note Mounted on double-sided copper-clad 50 × 50 × 1.6 mm epoxy glass PWB, TA = +85°C RECOMMENDED OPERATING RANGE (TA = +25°C, unless otherwise specified) Parameter Symbol MIN. TYP. MAX. Unit VDD 2.7 2.8 3.0 V Switch Control Voltage (H) Vcont (H) 2.7 2.8 3.0 V Switch Control Voltage (L) Vcont (L) −0.2 0 0.2 V Supply Voltage 2 Data Sheet PG10317EJ02V0DS µPG2010TB ELECTRICAL CHARACTERISTICS (TA = +25°C, VDD = 2.8 V, Vcont = 2.8 V/0 V, DC cut capacitors = 56 pF, unless otherwise specified) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Insertion Loss 1 LINS1 f = 0.5 to 1.0 GHz − 0.25 0.45 dB Insertion Loss 2 LINS2 f = 2.0 GHz − 0.30 0.50 dB Isolation 1 ISL1 f = 0.5 to 2.0 GHz 24 28 − dB Input Return Loss RLin f = 0.5 to 2.5 GHz 15 20 − dB Output Return Loss RLout f = 0.5 to 2.5 GHz 15 20 − dB +31.5 +33.0 − dBm 0.1 dB Gain Compression Input Power Pin (0.1 dB) f = 1.0 GHz Note 2nd Harmonics 2f0 f = 1.0 GHz, Pin = +30.5 dBm 65 75 − dBc 3rd Harmonics 3f0 f = 1.0 GHz, Pin = +30.5 dBm 65 75 − dBc Supply Current IDD − 50 100 µA Switch Control Current Icont − 4 20 µA Note Pin (0.1 dB) is measured the input power level when the insertion loss increases more 0.1 dB than that of linear range. STANDARD CHARACTERISTICS FOR REFERENCE (TA = +25°C, VDD = 2.8 V, Vcont = 2.8 V/0 V, DC cut capacitors = 56 pF, unless otherwise specified) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Insertion Loss 3 LINS3 f = 2.5 GHz − 0.35 − dB Isolation 2 ISL2 f = 2.5 GHz − 25 − dB − 1 − µs Switch Control Speed tSW Caution This device is used it is necessary to use DC cut capacitors. The value of DC cut capacitors should be chosen to accommodate the frequency of operation, bandwidth, switching speed and the condition with actual board of your system. The range of recommended DC cut capacitor value is less than 100 pF. Data Sheet PG10317EJ02V0DS 3 µPG2010TB EVALUATION CIRCUIT (VDD = 2.8 V, Vcont = 2.8 V/0 V, DC cut capacitors = 56 pF) OUTPUT1 OUTPUT2 56 pF 56 pF 1 2 6 3 5 4 56 pF 1 000 pF VDD INPUT 1 000 pF Vcont The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. 4 Data Sheet PG10317EJ02V0DS µPG2010TB ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD VDD 6Pin SMM SPDT SW VC 1 OUTPUT1 C2 C 1 C 5 OUT 1 C1 G2Y INPUT C3 C1 C1 IN C 2 C 4 C2 OUT 2 OUTPUT2 VC 2 Vcont USING THE NEC EVALUATION BOARD Symbol C1, C2, C3 C4, C5 Values 56 pF 1 000 pF Data Sheet PG10317EJ02V0DS 5 µPG2010TB TYPICAL CHARACTERISTICS (TA = +25°C, VDD = 2.8 V, Vcont = 2.8 V/0 V, DC cut capacitors = 56 pF, unless otherwise specified) INPUT–OUTPUT2 INSERTION LOSS vs. FREQUENCY 0.4 0.3 0.3 0.2 0.2 Insertion Loss LINS (dB) 0.4 0.1 0 –0.1 –0.2 –0.3 –0.4 0.1 0 –0.1 –0.2 –0.3 –0.4 –0.5 –0.5 –0.6 0.5 0.8 1.1 1.4 1.7 2.0 2.3 2.6 2.9 3.2 3.5 –0.6 0.5 0.8 1.1 1.4 1.7 2.0 2.3 2.6 2.9 3.2 3.5 Frequency f (GHz) Frequency f (GHz) INPUT–OUTPUT1 ISOLATION vs. FREQUENCY INPUT–OUTPUT2 ISOLATION vs. FREQUENCY 50 40 40 30 30 Isolation ISL (dB) 50 20 10 0 –10 –20 20 10 0 –10 –20 –30 –30 –40 –40 –50 0.5 0.8 1.1 1.4 1.7 2.0 2.3 2.6 2.9 3.2 3.5 –50 0.5 0.8 1.1 1.4 1.7 2.0 2.3 2.6 2.9 3.2 3.5 Frequency f (GHz) Frequency f (GHz) INPUT–OUTPUT1 INPUT RETURN LOSS vs. FREQUENCY INPUT–OUTPUT2 INPUT RETURN LOSS vs. FREQUENCY 50 50 40 40 Input Return Loss RLin (dB) Input Return Loss RLin (dB) Isolation ISL (dB) Insertion Loss LINS (dB) INPUT–OUTPUT1 INSERTION LOSS vs. FREQUENCY 30 20 10 0 –10 –20 –30 30 20 10 0 –10 –20 –30 –40 –40 –50 0.5 0.8 1.1 1.4 1.7 2.0 2.3 2.6 2.9 3.2 3.5 –50 0.5 0.8 1.1 1.4 1.7 2.0 2.3 2.6 2.9 3.2 3.5 Frequency f (GHz) Frequency f (GHz) Remark The graphs indicate nominal characteristics. 6 Data Sheet PG10317EJ02V0DS INPUT–OUTPUT1 OUTPUT RETURN LOSS vs. FREQUENCY INPUT–OUTPUT2 OUTPUT RETURN LOSS vs. FREQUENCY 50 50 40 40 Output Return Loss RLout (dB) Output Return Loss RLout (dB) µPG2010TB 30 20 10 0 –10 –20 –30 –40 –50 0.5 0.8 1.1 1.4 1.7 2.0 2.3 2.6 2.9 3.2 3.5 20 10 0 –10 –20 –30 –40 –50 0.5 0.8 1.1 1.4 1.7 2.0 2.3 2.6 2.9 3.2 3.5 Frequency f (GHz) OUTPUT POWER vs. INPUT POWER 2ND HARMONICS, 3RD HARMONICS vs. INPUT POWER +40 f = 1.0 GHz +35 +30 +25 +20 +15 +10 +5 +10 +15 +20 +25 +30 +35 +40 2nd Harmonics 2f0, 3rd Harmonics 3f0 (dBc) Frequency f (GHz) +45 Output Power Pout (dBm) 30 –50 f = 1.0 GHz –55 –60 –65 –70 –75 2f0 –80 3f0 –85 –90 +10 Input Power Pin (dBm) +15 +20 +25 +30 +35 +40 Input Power Pin (dBm) Remark The graphs indicate nominal characteristics. Data Sheet PG10317EJ02V0DS 7 µPG2010TB PACKAGE DIMENSIONS 6-PIN SUPTER MINIMOLD (UNIT: mm) 2.1±0.1 0.2+0.1 –0.05 0.65 0.65 1.3 2.0±0.2 1.25±0.1 8 Data Sheet PG10317EJ02V0DS 0.15+0.1 –0.05 0 to 0.1 0.7 0.9±0.1 0.1 MIN. µPG2010TB RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Infrared Reflow VPS Wave Soldering Soldering Conditions Condition Symbol Peak temperature (package surface temperature) : 260°C or below Time at peak temperature : 10 seconds or less Time at temperature of 220°C or higher : 60 seconds or less Preheating time at 120 to 180°C : 120±30 seconds Maximum number of reflow processes : 3 times Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below Peak temperature (package surface temperature) : 215°C or below Time at temperature of 200°C or higher : 25 to 40 seconds Preheating time at 120 to 150°C : 30 to 60 seconds Maximum number of reflow processes : 3 times Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below Peak temperature (molten solder temperature) : 260°C or below Time at peak temperature : 10 seconds or less IR260 VP215 WS260 Preheating temperature (package surface temperature) : 120°C or below Partial Heating Maximum number of flow processes : 1 time Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below Peak temperature (pin temperature) : 350°C or below Soldering time (per side of device) : 3 seconds or less Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below HS350 Caution Do not use different soldering methods together (except for partial heating). Data Sheet PG10317EJ02V0DS 9 µPG2010TB Bluetooth is a trademark owned by Bluetooth SIG, Inc., U.S.A. • The information in this document is current as of October, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. 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"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd. and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4 - 0110 10 Data Sheet PG10317EJ02V0DS µPG2010TB Caution GaAs Products This product uses gallium arsenide (GaAs). GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. • Follow related laws and ordinances when disposing of the product. If there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. Commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. Exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until final disposal. • Do not burn, destroy, cut, crush, or chemically dissolve the product. • Do not lick the product or in any way allow it to enter the mouth. 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