NEC UPG2015TB_1

DATA SHEET
GaAs INTEGRATED CIRCUIT
µPG2015TB
L, S-BAND SPDT SWITCH
DESCRIPTION
The µPG2015TB is a GaAs MMIC for L, S-band SPDT (Single Pole Double Throw) switch which were developed
for mobile phone and another L, S-band application.
This device can operate frequency from 0.5 GHz to 2.5 GHz, having the low insertion loss and high isolation.
This device is housed in a 6-pin super minimold package. And this package is able to high-density surface
mounting.
FEATURES
• Supply voltage
: VDD = 2.7 to 3.0 V (2.8 V TYP.)
• Switch control voltage
: Vcont (H) = 2.7 to 3.0 V (2.8 V TYP.)
: Vcont (L) = −0.2 to +0.2 V (0 V TYP.)
• Low insertion loss
: LINS1 = 0.25 dB TYP. @ f = 0.5 to 1.0 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V
: LINS2 = 0.30 dB TYP. @ f = 1.0 to 2.0 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V
: LINS3 = 0.35 dB TYP. @ f = 2.5 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V
• High isolation
: ISL1 = 27 dB TYP. @ f = 0.5 to 2.0 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V
: ISL2 = 24 dB TYP. @ f = 2.5 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V
• Middle power
: Pin(0.1 dB) = +27.0 dBm TYP. @ f = 2.5 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V
• High-density surface mounting
: 6-pin super minimold package (2.0 × 1.25 × 0.9 mm)
APPLICATIONS
• L-band digital cellular or cordless telephone
• PCS, W-LAN, WLL and BluetoothTM etc.
ORDERING INFORMATION
Part Number
µPG2015TB-E3
Package
6-pin super minimold
Marking
G3J
Supplying Form
• Embossed tape 8 mm wide
• Pin 1, 2, 3 face the perforation side of the tape
• Qty 3 kpcs/reel
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: µPG2015TB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PG10356EJ02V0DS (2nd edition)
Date Published August 2003 CP(K)
Printed in Japan
The mark
shows major revised points.
 NEC Compound Semiconductor Devices 2003
µPG2015TB
PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM
(Top View)
(Top View)
G3J
3
2
(Bottom View)
4 3
4 4
3
5 2
5 5
2
6 1
1
6 6
1
Pin No.
Pin Name
1
OUTPUT1
2
GND
3
OUTPUT2
4
Vcont
5
INPUT
6
VDD
TRUTH TABLE
Vcont
INPUT−OUTPUT1
INPUT−OUTPUT2
Low
OFF
ON
High
ON
OFF
ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Supply Voltage
VDD
+6.0
V
Switch Control Voltage
Vcont
+6.0
V
Input Power
Pin
+33
dBm
Operating Ambient Temperature
TA
−45 to +85
°C
Storage Temperature
Tstg
−55 to +150
°C
RECOMMENDED OPERATING RANGE (TA = +25°C, unless otherwise specified)
Parameter
Symbol
MIN.
TYP.
MAX.
Unit
VDD
2.7
2.8
3.0
V
Switch Control Voltage (H)
Vcont(H)
2.7
2.8
3.0
V
Switch Control Voltage (L)
Vcont(L)
−0.2
0
0.2
V
Supply Voltage
2
Data Sheet PG10356EJ02V0DS
µPG2015TB
ELECTRICAL CHARACTERISTICS
(TA = +25°C, VDD = 2.8 V, Vcont = 2.8 V/0 V, DC cut capacitors = 56 pF, unless otherwise specified)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Insertion Loss 1
LINS1
f = 0.5 to 1.0 GHz
−
0.25
0.45
dB
Insertion Loss 2
LINS2
f = 1.0 to 2.0 GHz
−
0.30
0.50
dB
Insertion Loss 3
LINS3
f = 2.5 GHz
−
0.35
0.55
dB
Isolation 1
ISL1
f = 0.5 to 2.0 GHz
23
27
−
dB
Isolation 2
ISL2
f = 2.5 GHz
20
24
−
dB
Input Return Loss
RLin
f = 0.5 to 2.5 GHz
15
20
−
dB
Output Return Loss
RLout
f = 0.5 to 2.5 GHz
15
20
−
dB
Pin(0.1 dB) f = 2.0 GHz
+25.5
+27.0
−
dBm
f = 2.5 GHz
+25.5
+27.0
−
dBm
0.1 dB Gain Compression
Input Power
Note
Supply Current
IDD
−
50
100
µA
Switching Control Current
Icont
−
4
20
µA
Switching Control Speed
tSW
−
0.3
2.0
µs
Note Pin(0.1dB) is measured the input power level when the insertion loss increases more 0.1 dB than that of linear
range.
STANDARD CHARACTERISTICS FOR REFERENCE
(TA = +25°C, VDD = 2.8 V, Vcont = 2.8 V/0 V, DC cut capacitors = 56 pF, unless otherwise specified)
Parameter
Symbol
1 dB Gain Compression
Pin(1 dB)
Input Power
Test Conditions
f = 2.0 GHz
MIN.
TYP.
MAX.
Unit
−
+30.0
−
dBm
Note
Note Pin(1dB) is measured the input power level when the insertion loss increases more 1 dB than that of linear
range.
Caution This device is used it is necessary to use DC cut capacitors.
The value of DC cut capacitors should be chosen to accommodate the frequency of operation,
bandwidth, switching speed and the condition with actual board of your system. The range of
recommended DC cut capacitor value is less than 100 pF.
Data Sheet PG10356EJ02V0DS
3
µPG2015TB
EVALUATION CIRCUIT (VDD = 2.8 V, Vcont = 2.8 V/0 V, DC cut capacitors = 56 pF)
OUTPUT1
OUTPUT2
56 pF
56 pF
1
2
3
6
5
4
56 pF
1 000 pF
VDD
INPUT
1 000 pF
Vcont
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
4
Data Sheet PG10356EJ02V0DS
µPG2015TB
ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD
VDD
6pin SMM SPDT SW
Vc1
OUTPUT1
C2
C
2
C
4
OUT 1
C1
G3J
INPUT
C3
C1
C1
IN
C
1
C
5
C2
OUT 2
OUTPUT2
Vc2
Vcont
USING THE NEC EVALUATION BOARD
Symbol
C1, C2, C3
C4, C5
Values
56 pF
1 000 pF
Data Sheet PG10356EJ02V0DS
5
µPG2015TB
TYPICAL CHARACTERISTICS
(TA = +25°C, VDD = 2.8 V, Vcont = 2.8 V/0 V, DC cut capacitors = 56 pF, unless otherwise specified)
INPUT–OUTPUT2
INSERSION LOSS vs. FREQUENCY
0.5
0
0
Insersion Loss LINS (dB)
0.5
–0.5
–1.0
–1.5
–2.0
–0.5
–1.0
–1.5
–2.0
–2.5
–2.5
–3.0
0.5 0.8 1.1 1.4 1.7 2.0 2.3 2.6 2.9 3.2 3.5
–3.0
0.5 0.8 1.1 1.4 1.7 2.0 2.3 2.6 2.9 3.2 3.5
Frequency f (GHz)
Frequency f (GHz)
INPUT–OUTPUT1
ISOLATION vs. FREQUENCY
INPUT–OUTPUT2
ISOLATION vs. FREQUENCY
20
10
10
0
0
Isolation ISL (dB)
20
–10
–20
–30
–10
–20
–30
–40
–40
–50
0.5 0.8 1.1 1.4 1.7 2.0 2.3 2.6 2.9 3.2 3.5
–50
0.5 0.8 1.1 1.4 1.7 2.0 2.3 2.6 2.9 3.2 3.5
Frequency f (GHz)
Frequency f (GHz)
INPUT–OUTPUT1
INPUT RETURN LOSS vs. FREQUENCY
INPUT–OUTPUT2
INPUT RETURN LOSS vs. FREQUENCY
20
20
10
10
Input Return Loss RLin (dB)
Input Return Loss RLin (dB)
Isolation ISL (dB)
Insersion Loss LINS (dB)
INPUT–OUTPUT1
INSERSION LOSS vs. FREQUENCY
0
–10
–20
–30
–40
–50
0.5 0.8 1.1 1.4 1.7 2.0 2.3 2.6 2.9 3.2 3.5
0
–10
–20
–30
–40
–50
0.5 0.8 1.1 1.4 1.7 2.0 2.3 2.6 2.9 3.2 3.5
Frequency f (GHz)
Frequency f (GHz)
Remark The graphs indicate nominal characteristics.
6
Data Sheet PG10356EJ02V0DS
µPG2015TB
INPUT–OUTPUT1
OUTPUT RETURN LOSS vs. FREQUENCY
INPUT–OUTPUT2
OUTPUT RETURN LOSS vs. FREQUENCY
20
Output Return Loss RLout (dB)
Output Return Loss RLout (dB)
20
10
0
–10
–20
–30
–40
–50
0.5 0.8 1.1 1.4 1.7 2.0 2.3 2.6 2.9 3.2 3.5
10
0
–10
–20
–30
–40
–50
0.5 0.8 1.1 1.4 1.7 2.0 2.3 2.6 2.9 3.2 3.5
Frequency f (GHz)
Frequency f (GHz)
32 f = 1.0 GHz
30
28
26
24
22
20
18
16
14
12
10
8
10 12 14 16 18 20 22 24 26 28 30 32 34
OUTPUT POWER vs. INPUT POWER
30
28
Output Power Pout (dBm)
Output Power Pout (dBm)
OUTPUT POWER vs. INPUT POWER
f = 2.5 GHz
26
24
22
20
18
16
14
12
10
8
10 12 14 16 18 20 22 24 26 28 30 32
Input Power Pin (dBm)
Input Power Pin (dBm)
Remark The graphs indicate nominal characteristics.
Data Sheet PG10356EJ02V0DS
7
µPG2015TB
PACKAGE DIMENSIONS
6-PIN SUPER MINIMOLD (UNIT: mm)
2.1±0.1
0.2+0.1
–0.05
0.65
0.65
1.3
2.0±0.2
1.25±0.1
8
Data Sheet PG10356EJ02V0DS
0.15+0.1
–0.05
0 to 0.1
0.7
0.9±0.1
0.1 MIN.
µPG2015TB
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions.
For soldering
methods and conditions other than those recommended below, contact your nearby sales office.
Soldering Method
Infrared Reflow
VPS
Wave Soldering
Soldering Conditions
Condition Symbol
Peak temperature (package surface temperature)
: 260°C or below
Time at peak temperature
: 10 seconds or less
Time at temperature of 220°C or higher
: 60 seconds or less
Preheating time at 120 to 180°C
: 120±30 seconds
Maximum number of reflow processes
: 3 times
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
Peak temperature (package surface temperature)
: 215°C or below
Time at temperature of 200°C or higher
: 25 to 40 seconds
Preheating time at 120 to 150°C
: 30 to 60 seconds
Maximum number of reflow processes
: 3 times
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
Peak temperature (molten solder temperature)
: 260°C or below
Time at peak temperature
: 10 seconds or less
IR260
VP215
WS260
Preheating temperature (package surface temperature) : 120°C or below
Partial Heating
Maximum number of flow processes
: 1 time
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
Peak temperature (pin temperature)
: 350°C or below
Soldering time (per side of device)
: 3 seconds or less
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
HS350
Caution Do not use different soldering methods together (except for partial heating).
Data Sheet PG10356EJ02V0DS
9
µPG2015TB
Bluetooth is a trademark owned by Bluetooth SIG, Inc., U.S.A.
• The information in this document is current as of August, 2003. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
• NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
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• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
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agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
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redundancy, fire-containment, and anti-failure features.
• NEC semiconductor products are classified into the following three quality grades:
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developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
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The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
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to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.
and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4 - 0110
10
Data Sheet PG10356EJ02V0DS
µPG2015TB
Caution
GaAs Products
This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth.
For further information, please contact
NEC Compound Semiconductor Devices, Ltd.
http://www.ncsd.necel.com/
E-mail: [email protected] (sales and general)
[email protected] (technical)
5th Sales Group, Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579
NEC Compound Semiconductor Devices Hong Kong Limited
E-mail: [email protected] (sales, technical and general)
FAX: +852-3107-7309
TEL: +852-3107-7303
Hong Kong Head Office
TEL: +886-2-8712-0478 FAX: +886-2-2545-3859
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FAX: +82-2-558-5209
TEL: +82-2-558-2120
Korea Branch Office
NEC Electronics (Europe) GmbH
http://www.ee.nec.de/
TEL: +49-211-6503-01 FAX: +49-211-6503-487
California Eastern Laboratories, Inc.
http://www.cel.com/
TEL: +1-408-988-3500 FAX: +1-408-988-0279
0307