NIEC PHT25016

PHT25012 PHT25016
THYRISTOR MODULE
250A / 1200V to 1600V
OUTLINE DRAWING
FEATURES
* Isolated Base
* Single Thyristor Module
* High Surge Capability
* UL Recognized, File No. E187184
TYPICAL APPLICATIONS
* Rectified For General Use
Maximum Ratings
Parameter
Repetitive Peak Off-State Voltage
Non Repetitive Peak Off-State Voltage
Repetitive Peak Reverse Voltage
Non Repetitive Peak Reverse Voltage
Approx Net Weight:250g
Symbol
VDRM
VDSM
VRRM
VRSM
Parameter
IO(AV)
RMS On-State Current
IT(RMS)
I Squared t
PHT25012
PHT25016
1200
1300
1200
1300
1600
1700
1600
1700
Conditions
Average Rectified Output Current
Surge On-State Current
Grade
ITSM
I2t
Critical Rate of Turned-On Current
di/dt
Peak Gate Power
Average Gate Power
Peak Gate Current
Peak Gate Voltage
Peak Gate Reverse Voltage
Operating JunctionTemperature Range
Storage Temperature Range
Isoration Voltage
Case mounting
Mounting torque
Terminals
PGM
PG(AV)
IGM
VGM
VRGM
Tjw
Tstg
Viso
Ftor
50Hz Half Sine Wave condition
Tc=65°C
50 Hz Half Sine Wave, 1Pulse
Non-Repetitive
2msec to 10msec
VD=2/3VDRM, ITM=2 IO, Tj=125°C
IG=300mA, diG/dt=0.2A/µs
•
Unit
V
V
Max Rated
Value
Unit
250
A
390
A
4000
A
80000
A2s
100
A/µs
5
W
1
W
2
A
10
V
5
V
-40 to +125 °C
-40 to +125 °C
Base Plate to Terminals, AC1min
2500
V
M5 Screw
2.4 to 2.8
N •m
M5 Screw
2.4 to 2.8
Electrical • Thermal Characteristics
Characteristics
VDM= VDRM, Tj= 125°C
VRM= VRRM, Tj= 125°C
ITM= 800A, Tj=25°C
Tj=-40°C
VD=6V,IT=1A
Tj=25°C
Tj=125°C
Tj=-40°C
VD=6V,IT=1A
Tj=25°C
Tj=125°C
VD=2/3VDRM Tj=125°C
Maximum Value.
Min. Typ. Max.
80
80
1.38
300
150
80
5
3
2
0.25
dv/dt
VD=2/3VDRM Tj=125°C
500
tq
ITM=IO,VD=2/3VDRM
dv/dt=20V/µs, VR=100V
-di/dt=20A/µs, Tj=125°C
Symbol
Peak Off-State Current
Peak Reverse Current
Peak Forward Voltage
IDM
IRM
VTM
Gate Current to Trigger
IGT
Gate Voltage to Trigger
VGT
Gate Non-Trigger Voltage
Critical Rate of Rise of Off-State
Voltage
VGD
Turn-Off Time
Turn-On Time
Delay Time
Rise Time
Latching Current
Holding Current
Thermal Resistance
tgt
td
tr
IL
IH
Rth(j-c)
Test Conditions
VD=2/3VDRM Tj=125°C
IG=300mA, diG/dt=0.2A/µs
Tj=25°C
Tj=25°C
Junction to Case
Base Plate to Heat Sink
Rth(c-f)
with Thermal Compound
Unit
mA
mA
V
mA
V
V
V/µs
200
µs
6
2
4
150
100
µs
µs
µs
mA
0.18
0.1
°C/W
PHT2501x OUTLINE DRAWING (Dimensions in mm)
The striking distance between the anode and the
cathode of this module is 5mm filling with UL1557, b
ut when used by the system of 400VAC, take an e
nough striking distance and wire.