PHT25012 PHT25016 THYRISTOR MODULE 250A / 1200V to 1600V OUTLINE DRAWING FEATURES * Isolated Base * Single Thyristor Module * High Surge Capability * UL Recognized, File No. E187184 TYPICAL APPLICATIONS * Rectified For General Use Maximum Ratings Parameter Repetitive Peak Off-State Voltage Non Repetitive Peak Off-State Voltage Repetitive Peak Reverse Voltage Non Repetitive Peak Reverse Voltage Approx Net Weight:250g Symbol VDRM VDSM VRRM VRSM Parameter IO(AV) RMS On-State Current IT(RMS) I Squared t PHT25012 PHT25016 1200 1300 1200 1300 1600 1700 1600 1700 Conditions Average Rectified Output Current Surge On-State Current Grade ITSM I2t Critical Rate of Turned-On Current di/dt Peak Gate Power Average Gate Power Peak Gate Current Peak Gate Voltage Peak Gate Reverse Voltage Operating JunctionTemperature Range Storage Temperature Range Isoration Voltage Case mounting Mounting torque Terminals PGM PG(AV) IGM VGM VRGM Tjw Tstg Viso Ftor 50Hz Half Sine Wave condition Tc=65°C 50 Hz Half Sine Wave, 1Pulse Non-Repetitive 2msec to 10msec VD=2/3VDRM, ITM=2 IO, Tj=125°C IG=300mA, diG/dt=0.2A/µs • Unit V V Max Rated Value Unit 250 A 390 A 4000 A 80000 A2s 100 A/µs 5 W 1 W 2 A 10 V 5 V -40 to +125 °C -40 to +125 °C Base Plate to Terminals, AC1min 2500 V M5 Screw 2.4 to 2.8 N •m M5 Screw 2.4 to 2.8 Electrical • Thermal Characteristics Characteristics VDM= VDRM, Tj= 125°C VRM= VRRM, Tj= 125°C ITM= 800A, Tj=25°C Tj=-40°C VD=6V,IT=1A Tj=25°C Tj=125°C Tj=-40°C VD=6V,IT=1A Tj=25°C Tj=125°C VD=2/3VDRM Tj=125°C Maximum Value. Min. Typ. Max. 80 80 1.38 300 150 80 5 3 2 0.25 dv/dt VD=2/3VDRM Tj=125°C 500 tq ITM=IO,VD=2/3VDRM dv/dt=20V/µs, VR=100V -di/dt=20A/µs, Tj=125°C Symbol Peak Off-State Current Peak Reverse Current Peak Forward Voltage IDM IRM VTM Gate Current to Trigger IGT Gate Voltage to Trigger VGT Gate Non-Trigger Voltage Critical Rate of Rise of Off-State Voltage VGD Turn-Off Time Turn-On Time Delay Time Rise Time Latching Current Holding Current Thermal Resistance tgt td tr IL IH Rth(j-c) Test Conditions VD=2/3VDRM Tj=125°C IG=300mA, diG/dt=0.2A/µs Tj=25°C Tj=25°C Junction to Case Base Plate to Heat Sink Rth(c-f) with Thermal Compound Unit mA mA V mA V V V/µs 200 µs 6 2 4 150 100 µs µs µs mA 0.18 0.1 °C/W PHT2501x OUTLINE DRAWING (Dimensions in mm) The striking distance between the anode and the cathode of this module is 5mm filling with UL1557, b ut when used by the system of 400VAC, take an e nough striking distance and wire.