TYPICAL PERFORMANCE CURVES APT20GN60BDQ1 APT20GN60BD_SDQ1(G) APT20GN60SDQ1 APT20GN60BDQ1(G) APT20GN60SDQ1(G) 600V *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. Low gate charge simplifies gate drive design and minimizes losses. (B) TO -2 D3PAK 47 (S) C G G • 600V Field Stop • • • • C E E Trench Gate: Low VCE(on) Easy Paralleling 6µs Short Circuit Capability 175°C Rated C G E Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter APT20GN60BD_SDQ1(G) VCES Collector-Emitter Voltage 600 VGE Gate-Emitter Voltage ±30 I C1 Continuous Collector Current @ TC = 25°C 40 I C2 Continuous Collector Current @ TC = 110°C 24 I CM SSOA PD TJ,TSTG TL Pulsed Collector Current 1 @ TC = 175°C UNIT Volts Amps 60 Switching Safe Operating Area @ TJ = 175°C 60A @ 600V Total Power Dissipation Watts 136 Operating and Storage Junction Temperature Range -55 to 175 °C Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. 300 STATIC ELECTRICAL CHARACTERISTICS V(BR)CES Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 2mA) 600 VGE(TH) Gate Threshold Voltage VCE(ON) (VCE = VGE, I C = 290µA, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 20A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 20A, Tj = 125°C) I CES I GES RG(int) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) TYP MAX 5.0 5.8 6.5 1.1 1.5 1.9 50 2 300 N/A CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com µA TBD Gate-Emitter Leakage Current (VGE = ±20V) Intergrated Gate Resistor Volts 1.7 2 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) Units nA Ω 7-2009 MIN Rev B Characteristic / Test Conditions 050-7615 Symbol DYNAMIC CHARACTERISTICS Symbol APT20GN60BD_SDQ1(G) Test Conditions Characteristic Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate-to-Emitter Plateau Voltage Qg Qge Qgc SSOA SCSOA Total Gate Charge 1110 VGE = 0V, VCE = 25V 50 f = 1 MHz 35 Gate Charge 9.5 VGE = 15V 120 VCE = 300V 10 I C = 20A Gate-Collector ("Miller ") Charge TJ = 175°C, R G = 4.3Ω Switching Safe Operating Area VGE = VCC = 360V, VGE = 15V, TJ = 150°C, R G = 4.3Ω 7 tr Current Rise Time VCC = 400V 10 td(off) Turn-off Delay Time VGE = 15V 140 I C = 20A 95 RG = 4.3Ω 7 230 TJ = +25°C 260 Turn-on Switching Energy Eon2 Turn-on Switching Energy (Diode) 5 Eoff Turn-off Switching Energy td(on) Turn-on Delay Time Inductive Switching (125°C) 9 tr Current Rise Time VCC = 400V 10 td(off) Turn-off Delay Time VGE = 15V 160 I C = 20A RG = 4.3Ω 7 130 250 TJ = +125°C 450 tf 6 44 Turn-on Switching Energy Eon2 Turn-on Switching Energy (Diode) Eoff Turn-off Switching Energy ns µJ 580 Current Fall Time Eon1 nC µs 9 Eon1 V 6 Inductive Switching (25°C) 4 pF A Turn-on Delay Time Current Fall Time UNIT 60 td(on) tf MAX 70 7, 15V, L = 100µH,VCE = 600V Short Circuit Safe Operating Area TYP Capacitance 3 Gate-Emitter Charge MIN 55 66 ns µJ 750 THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic RθJC Junction to Case (IGBT) RθJC Junction to Case (DIODE) WT Package Weight MIN TYP MAX 1.1 1.35 5.9 UNIT °C/W gm 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 050-7615 Rev B 7-2009 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance, not including RG(int) nor gate driver impedance. (MIC4452) Microsemi Reserves the right to change, without notice, the specifications and information contained herein. TYPICAL PERFORMANCE CURVES APT20GN60BD_SDQ1(G) 90 40 15V = 15V IC, COLLECTOR CURRENT (A) 30 25 TJ = 125°C 20 15 TJ = 175°C 10 TJ = -55°C 5 FIGURE 1, Output Characteristics(TJ = 25°C) 30 10V 20 9V TJ = -55°C TJ = 25°C 40 TJ = 125°C TJ = 175°C 30 20 10 0 TJ = 25°C. 250µs PULSE TEST <0.5 % DUTY CYCLE IC = 40A 2.0 IC = 20A 1.5 IC = 10A 1.0 0 5 10 15 20 25 30 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) 0.5 6 8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.10 1.00 0.90 0.80 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, Breakdown Voltage vs. Junction Temperature VCE = 120V 12 VCE = 300V 10 VCE = 480V 8 6 4 2 0 20 40 60 80 100 GATE CHARGE (nC) 120 140 3.0 2.5 IC = 40A 2.0 IC = 20A 1.5 IC = 10A 1.0 0.5 0 VGE = 15V. 250µs PULSE TEST <0.5 % DUTY CYCLE 0 25 50 75 100 125 150 175 TJ, Junction Temperature (°C) FIGURE 6, On State Voltage vs Junction Temperature 60 IC, DC COLLECTOR CURRENT(A) 1.20 J FIGURE 4, Gate Charge 1.40 1.30 I = 20A C T = 25°C 14 0 5 10 15 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics 3.0 2.5 8V FIGURE 2, Output Characteristics (TJ = 125°C) VGE, GATE-TO-EMITTER VOLTAGE (V) 250µs PULSE TEST<0.5 % DUTY CYCLE 50 IC, COLLECTOR CURRENT (A) 11V 40 16 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 60 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 12V 50 0 0 0.5 1.0 1.5 2.0 2.5 3.0 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED) 60 10 0 0 13V 70 50 40 30 20 7-2009 IC, COLLECTOR CURRENT (A) TJ = 25°C 0 14V 80 10 0 -50 -25 0 25 50 75 100 125 150 175 TC, CASE TEMPERATURE (°C) FIGURE 8, DC Collector Current vs Case Temperature Rev B GE 050-7615 V 35 APT20GN60BD_SDQ1(G) 250 td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns) 12 VGE = 15V 10 8 6 4 VCE = 400V 2 T = 25°C, T =125°C J J RG = 4.3Ω L = 100 µH 0 200 150 VGE =15V,TJ=125°C 100 VGE =15V,TJ=25°C 50 VCE = 400V RG = 4.3Ω L = 100 µH 0 5 10 15 20 25 30 35 40 45 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 5 10 15 20 25 30 35 40 45 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 25 140 RG = 4.3Ω, L = 100µH, VCE = 400V 120 TJ = 125°C, VGE = 15V tf, FALL TIME (ns) tr, RISE TIME (ns) 20 15 10 100 80 TJ = 25°C, VGE = 15V 60 40 TJ = 25 or 125°C,VGE = 15V 5 20 0 0 5 10 15 20 25 30 35 40 45 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 1400 V = 400V CE V = +15V GE R = 4.3Ω 1200 10 15 20 25 30 35 40 45 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current EOFF, TURN OFF ENERGY LOSS (µJ) EON2, TURN ON ENERGY LOSS (µJ) 1400 G 1000 TJ = 125°C 800 600 400 200 TJ = 25°C 1200 G TJ = 125°C 1000 800 600 TJ = 25°C 400 200 5 10 15 20 25 30 35 40 45 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 5 10 15 20 25 30 35 40 45 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 3500 1400 V = 400V CE V = +15V GE T = 125°C 3000 J Eon2,40A 2500 2000 Eoff,40A 1500 1000 500 0 Eoff,20A Eon2,20A Eoff,10A Eon2,10A 0 10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance SWITCHING ENERGY LOSSES (µJ) SWITCHING ENERGY LOSSES (µJ) 7-2009 Rev B V = 400V CE V = +15V GE R = 4.3Ω 0 0 050-7615 RG = 4.3Ω, L = 100µH, VCE = 400V 5 V = 400V CE V = +15V GE R = 4.3Ω 1200 Eon2,40A G Eoff,40A 1000 800 600 Eoff,20A 400 Eoff,10A Eon2,20A 200 Eon2,10A 0 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) FIGURE 16, Switching Energy Losses vs Junction Temperature TYPICAL PERFORMANCE CURVES IC, COLLECTOR CURRENT (A) Cies 500 P C, CAPACITANCE ( F) 1,000 100 Coes 50 APT20GN60BD_SDQ1(G) 70 2,000 60 50 40 30 20 10 Cres 10 0 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage 0 100 200 300 400 500 600 700 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area 1.00 D = 0.9 0.80 0.7 0.60 0.5 0.40 0.3 PDM Note: SINGLE PULSE t1 t2 0.20 t 0.1 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC 0.05 10-5 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 1.0 140 100 50 F max = min (f max, f max2) 0.05 f max1 = t d(on) + tr + td(off) + tf 10 7 T = 125°C J T = 75°C C D = 50 % V = 400V CE R = 4.3Ω G f max2 = Pdiss - P cond E on2 + E off Pdiss = TJ - T C R θJC 10 15 20 25 30 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current Rev B 7-2009 5 050-7615 0 FMAX, OPERATING FREQUENCY (kHz) ZθJC, THERMAL IMPEDANCE (°C/W) 1.20 APT20GN60BD_SDQ1(G) APT15DQ60 Gate Voltage 10% TJ = 125°C td(on) IC V CC tr V CE Collector Current 90% 5% 5% 10% Collector Voltage A Switching Energy D.U.T. Figure 22, Turn-on Switching Waveforms and Definitions Figure 21, Inductive Switching Test Circuit 90% Gate Voltage TJ = 125°C td(off) Collector Voltage 90% tf 10% 0 Collector Current Switching Energy 050-7615 Rev B 7-2009 Figure 23, Turn-off Switching Waveforms and Definitions TYPICAL PERFORMANCE CURVES APT20GN60BD_SDQ1(G) ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE MAXIMUM RATINGS Symbol IF(AV) IF(RMS) All Ratings: TC = 25°C unless otherwise specified. Characteristic / Test Conditions APT20GN60BD_SDQ1(G) Maximum Average Forward Current (TC = 129°C, Duty Cycle = 0.5) 15 RMS Forward Current (Square wave, 50% duty) 30 Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) IFSM UNIT Amps 110 STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions Forward Voltage VF MIN TYP IF = 20A 2.18 IF = 40A 2.76 IF = 20A, TJ = 125°C 1.75 MAX UNIT Volts DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions MIN TYP MAX UNIT trr Reverse Recovery Time I = 1A, di /dt = -100A/µs, V = 30V, T = 25°C F F R J - 15 trr Reverse Recovery Time - 19 Qrr Reverse Recovery Charge - 21 - 2 - 105 ns - 250 nC - 5 - 55 ns - 420 nC - 15 Amps IRRM trr Qrr IRRM trr Qrr IRRM IF = 15A, diF/dt = -200A/µs VR = 400V, TC = 25°C Maximum Reverse Recovery Current Reverse Recovery Time IF = 15A, diF/dt = -200A/µs Reverse Recovery Charge VR = 400V, TC = 125°C Maximum Reverse Recovery Current Reverse Recovery Time IF = 15A, diF/dt = -1000A/µs Reverse Recovery Charge VR = 400V, TC = 125°C Maximum Reverse Recovery Current ns nC - - Amps Amps D = 0.9 1.20 1.00 0.7 0.80 0.5 Note: 0.60 PDM 0.3 0.40 t1 t2 t 0.20 0.1 SINGLE PULSE 0.05 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC 0 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 24. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION 7-2009 10-4 Rev B 10-5 050-7615 ZθJC, THERMAL IMPEDANCE (°C/W) 1.40 APT20GN60BD_SDQ1(G) 60 140 50 120 trr, REVERSE RECOVERY TIME (ns) IF, FORWARD CURRENT (A) T =125°C J V =400V TJ = 175°C 40 TJ = 125°C 30 20 10 0 0 30A 500 400 15A 300 7.5A 200 100 1.2 R 20 30A 15 10 15A 7.5A 5 0 200 400 600 800 1000 1200 1400 1600 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 28. Reverse Recovery Current vs. Current Rate of Change 35 Qrr Duty cycle = 0.5 T =175°C J trr 1.0 T =125°C J V =400V 0 30 25 0.8 IF(AV) (A) Kf, DYNAMIC PARAMETERS (Normalized to 1000A/µs) 40 0 200 400 600 800 1000 1200 1400 1600 -diF /dt, CURRENT RATE OF CHANGE(A/µs) Figure 26. Reverse Recovery Time vs. Current Rate of Change IRRM, REVERSE RECOVERY CURRENT (A) Qrr, REVERSE RECOVERY CHARGE (nC) R 600 0 200 400 600 800 1000 1200 1400 1600 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 27. Reverse Recovery Charge vs. Current Rate of Change IRRM 0.6 trr 20 15 0.4 10 Qrr 0.2 0.0 5 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 29. Dynamic Parameters vs. Junction Temperature 0 90 CJ, JUNCTION CAPACITANCE (pF) 7.5A 60 25 T =125°C J V =400V 0 7-2009 15A 80 0 700 Rev B 30A 100 20 TJ = 25°C TJ = -55°C 1 2 3 4 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 25. Forward Current vs. Forward Voltage 050-7615 R 80 70 60 50 40 30 20 10 0 1 10 100 200 VR, REVERSE VOLTAGE (V) Figure 31. Junction Capacitance vs. Reverse Voltage 0 25 50 75 100 125 150 175 Case Temperature (°C) Figure 30. Maximum Average Forward Current vs. CaseTemperature TYPICAL PERFORMANCE CURVES APT20GN60BD_SDQ1(G) Vr diF /dt Adjust +18V APT6017LLL 0V D.U.T. 30μH trr/Qrr Waveform PEARSON 2878 CURRENT TRANSFORMER Figure 32. Diode Test Circuit 1 IF - Forward Conduction Current 2 diF /dt - Rate of Diode Current Change Through Zero Crossing. 3 IRRM - Maximum Reverse Recovery Current. 4 trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. 5 1 4 Zero 5 0.25 IRRM 3 2 Qrr - Area Under the Curve Defined by IRRM and trr. Figure 33, Diode Reverse Recovery Waveform and Definitions 3 TO-247 Package Outline e1 SAC: Tin, Silver, Copper 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) Collector (Cathode) 6.15 (.242) BSC 5.38 (.212) 6.20 (.244) Collector (Cathode) (Heat Sink) D PAK Package Outline e3 SAC: Tin, Silver, Copper 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05(.632) Revised 4/18/95 20.80 (.819) 21.46 (.845) 1.04 (.041) 1.15(.045) 13.41 (.528) 13.51(.532) 13.79 (.543) 13.99(.551) Revised 8/29/97 11.51 (.453) 11.61 (.457) 3.50 (.138) 3.81 (.150) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) 2.21 (.087) 2.59 (.102) 2.87 (.113) 3.12 (.123) 5.45 (.215) BSC 2-Plcs. 1.27 (.050) 1.40 (.055) 1.22 (.048) 1.32 (.052) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs.} 3.81 (.150) 4.06 (.160) (Base of Lead) Heat Sink (Collector) and Leads are Plated Emitter (Anode) Collector (Cathode) Gate Dimensions in Millimeters (Inches) Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved. 050-7615 Rev B Dimensions in Millimeters and (Inches) Gate Collector (Cathode) Emitter (Anode) 0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112) 7-2009 0.46 (.018) 0.56 (.022) {3 Plcs}