APT75GN60LDQ3(G) 600V TYPICAL PERFORMANCE CURVES APT75GN60LDQ3 APT75GN60LDQ3G* ® *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. Low gate charge simplifies gate drive design and minimizes losses. TO-264 • 600V Field Stop • • • • Trench Gate: Low VCE(on) Easy Paralleling 6µs Short Circuit Capability Intergrated Gate Resistor: Low EMI, High Reliability C G E Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter APT75GN60LDQ3(G) VCES Collector-Emitter Voltage 600 VGE Gate-Emitter Voltage ±30 I C1 Continuous Collector Current I C2 Continuous Collector Current @ TC = 110°C I CM Pulsed Collector Current SSOA PD TJ,TSTG TL 8 @ TC = 25°C UNIT Volts 155 93 1 Amps 225 225A @ 600V Switching Safe Operating Area @ TJ = 175°C 536 Total Power Dissipation Operating and Storage Junction Temperature Range Watts -55 to 175 Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. °C 300 STATIC ELECTRICAL CHARACTERISTICS V(BR)CES Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 4mA) 600 VGE(TH) Gate Threshold Voltage VCE(ON) I CES I GES RG(int) (VCE = VGE, I C = 1mA, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 75A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 75A, Tj = 125°C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) TYP MAX 5.0 5.8 6.5 1.05 1.45 1.85 50 2 600 4 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com µA TBD Gate-Emitter Leakage Current (VGE = ±20V) Intergrated Gate Resistor Volts 1.87 2 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) Units nA Ω 10-2005 MIN Rev B Characteristic / Test Conditions 050-7620 Symbol APT75GN60LDQ3(G) DYNAMIC CHARACTERISTICS Symbol Test Conditions Characteristic Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate-to-Emitter Plateau Voltage 3 Qg Total Gate Charge Qge Gate-Emitter Charge Qgc Gate-Collector ("Miller ") Charge SSOA SCSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf 150 Gate Charge 9.5 VGE = 15V 485 VGE = µs VCC = 400V 48 38 RG = 1.0Ω 7 2500 TJ = +25°C 2140 Turn-on Delay Time Inductive Switching (125°C) 47 VCC = 400V 48 Current Rise Time Turn-off Delay Time VGE = 15V 430 RG = 1.0Ω 7 55 2600 I C = 75A Current Fall Time 44 Turn-on Switching Energy (Diode) µJ 3725 6 Turn-on Switching Energy ns 385 I C = 75A Eon2 nC 6 VGE = 15V Turn-on Switching Energy (Diode) V A 47 5 pF 225 Inductive Switching (25°C) 4 UNIT 270 7, VCC = 600V, VGE = 15V, Current Fall Time MAX 30 TJ = 125°C, R G = 4.3Ω 7 Turn-off Delay Time Turn-off Switching Energy 370 f = 1 MHz 15V, L = 100µH,VCE = 600V Current Rise Time Eon1 Eoff VGE = 0V, VCE = 25V TJ = 175°C, R G = 4.3Ω Turn-on Delay Time Turn-off Switching Energy 4500 I C = 75A Short Circuit Safe Operating Area TYP Capacitance VCE = 300V Switching Safe Operating Area Turn-on Switching Energy MIN 55 TJ = +125°C ns 4525 66 µJ 2585 THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX RθJC Junction to Case (IGBT) .28 RθJC Junction to Case (DIODE) .34 WT Package Weight 5.9 UNIT °C/W gm 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 050-7620 Rev B 10-2005 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance, not including RG(int) nor gate driver impedance. (MIC4452) 8 Continuous current limited by package lead temperature to 100A. APT Reserves the right to change, without notice, the specifications and information contained herein. TYPICAL PERFORMANCE CURVES = 15V 12V IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 120 100 TJ = 25°C 80 TJ = 125°C 60 TJ = 175°C 40 TJ = -55°C 20 0 IC, COLLECTOR CURRENT (A) TJ = -55°C 120 TJ = 25°C 100 TJ = 125°C 80 60 40 TJ = 175°C 20 0 0 10V 100 9V 50 8V 7V FIGURE 2, Output Characteristics (TJ = 125°C) 16 VGE, GATE-TO-EMITTER VOLTAGE (V) 250µs PULSE TEST<0.5 % DUTY CYCLE 11V 150 0 5 10 15 20 25 30 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics(TJ = 25°C) 140 200 0 0 0.5 1.0 1.5 2.0 2.5 3.0 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) 160 I = 75A C T = 25°C J 14 VCE = 120V 12 VCE = 300V 10 VCE = 480V 8 6 4 2 0 2 4 6 8 10 12 VGE, GATE-TO-EMITTER VOLTAGE (V) 0 100 2.0 IC = 75A 1.5 IC = 37.5A 1.0 0.5 0 8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 3.0 2.0 0.80 0.75 0.70 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, Threshold Voltage vs. Junction Temperature IC, DC COLLECTOR CURRENT(A) 0.85 IC = 37.5A 1.0 0.5 0 VGE = 15V. 250µs PULSE TEST <0.5 % DUTY CYCLE 25 50 75 100 125 150 175 TJ, Junction Temperature (°C) FIGURE 6, On State Voltage vs Junction Temperature 180 0.90 IC = 75A 1.5 1.10 0.95 IC = 150A 2.5 200 1.00 500 3.5 1.15 1.05 200 300 400 GATE CHARGE (nC) FIGURE 4, Gate Charge VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) TJ = 25°C. 250µs PULSE TEST <0.5 % DUTY CYCLE IC = 150A 2.5 (NORMALIZED) VGS(TH), THRESHOLD VOLTAGE VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics 3.0 13 & 15V 0 160 140 120 100 80 60 Lead Temperature Limited 40 20 0 -50 -25 0 25 50 75 100 125 150 175 TC, CASE TEMPERATURE (°C) FIGURE 8, DC Collector Current vs Case Temperature 10-2005 GE 140 Rev B V APT75GN60LDQ3(G) 250 050-7620 160 td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns) VGE = 15V 50 40 30 20 VCE = 400V 10 T = 25°C, or =125°C J 0 RG = 1.0Ω L = 100 µH tf, FALL TIME (ns) tr, RISE TIME (ns) 120 100 80 60 RG = 1.0Ω, L = 100µH, VCE = 400V 16 12 TJ = 125°C 8 6 4 2 TJ = 25°C 0 30 25 20 15 Eon2,75A Eoff,150A 5 Eoff,75A Eon2,37.5A Eoff,37.5A 50 40 30 20 10 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance 0 = 400V V CE = +15V V GE R = 1.0Ω G 5 TJ = 125°C 4 3 2 TJ = 25°C 1 25 45 65 85 105 125 145 165 5 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current SWITCHING ENERGY LOSSES (mJ) Eon2,150A J 10 TJ = 25°C, VGE = 15V 16 = 400V V CE = +15V V GE T = 125°C 35 30 0 25 45 65 85 105 125 145 165 5 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 40 40 25 45 65 85 105 125 145 165 5 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current EOFF, TURN OFF ENERGY LOSS (mJ) G 10 50 6 V = 400V CE V = +15V GE R = 1.0Ω 14 TJ = 125°C, VGE = 15V 60 0 25 45 65 85 105 125 145 165 5 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current EON2, TURN ON ENERGY LOSS (mJ) L = 100µH 5 10 0 SWITCHING ENERGY LOSSES (mJ) 100 VCE = 400V RG = 1.0Ω 20 TJ = 25 or 125°C,VGE = 15V 20 10-2005 200 70 140 40 Rev B VGE =15V,TJ=25°C 80 160 050-7620 VGE =15V,TJ=125°C 300 90 RG = 1.0Ω, L = 100µH, VCE = 400V 180 400 25 45 65 85 105 125 145 165 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 5 200 500 0 25 45 65 85 105 125 145 165 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 0 APT75GN60LDQ3(G) 600 60 = 400V V CE = +15V V GE R = 1.0Ω 14 Eon2,150A G 12 10 8 6 Eon2,75A 4 Eoff,75A 2 0 Eoff,150A Eon2,37.5A Eoff,37.5A 125 100 75 50 25 TJ, JUNCTION TEMPERATURE (°C) FIGURE 16, Switching Energy Losses vs Junction Temperature 0 TYPICAL PERFORMANCE CURVES APT75GN60LDQ3(G) 250 IC, COLLECTOR CURRENT (A) Cies P C, CAPACITANCE ( F) 7,000 1,000 500 Coes 200 150 100 50 Cres 100 0 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage 0 100 200 300 400 500 600 700 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area D = 0.9 0.25 0.7 0.20 0.5 0.15 Note: 0.10 PDM ZθJC, THERMAL IMPEDANCE (°C/W) 0.30 0.3 t2 SINGLE PULSE 0.05 t 0.1 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC 0.05 0 10-5 t1 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 1.0 0.181 0.153 Case temperature. (°C) FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL = min (fmax, fmax2) 0.05 fmax1 = td(on) + tr + td(off) + tf 5 T = 125°C J T = 75°C C D = 50 % V = 400V CE R = 1.0Ω 1 10 G max fmax2 = Pdiss - Pcond Eon2 + Eoff Pdiss = TJ - TC RθJC 30 50 70 90 110 130 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current 10-2005 0.00438 F 10 Rev B 0.0998 Power (watts) 50 050-7620 RC MODEL Junction temp. (°C) FMAX, OPERATING FREQUENCY (kHz) 100 APT75GN60LDQ3(G) Gate Voltage 10% APT75DQ60 TJ = 125°C td(on) tr V CE IC V CC Collector Current 5% 90% 10% 5% Collector Voltage A Switching Energy D.U.T. Figure 22, Turn-on Switching Waveforms and Definitions Figure 21, Inductive Switching Test Circuit 90% Gate Voltage TJ = 125°C td(off) tf Collector Voltage 90% 10% 0 Collector Current Switching Energy 050-7620 Rev B 10-2005 Figure 23, Turn-off Switching Waveforms and Definitions TYPICAL PERFORMANCE CURVES APT75GN60LDQ3(G) ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE MAXIMUM RATINGS Symbol IF(AV) IF(RMS) IFSM All Ratings: TC = 25°C unless otherwise specified. APT75GN60LDQ3(G) Characteristic / Test Conditions Maximum Average Forward Current (TC = 108°C, Duty Cycle = 0.5) UNIT 75 RMS Forward Current (Square wave, 50% duty) 117 Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) 600 Amps STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN Forward Voltage VF TYP IF = 75A 2.0 IF = 150A 2.4 IF = 75A, TJ = 125°C 1.7 MAX UNIT Volts DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions MIN TYP MAX UNIT trr Reverse Recovery Time I = 1A, di /dt = -100A/µs, V = 30V, T = 25°C F F R J - 29 trr Reverse Recovery Time - 31 Qrr Reverse Recovery Charge - 55 - 4 - 140 ns - 650 nC - 9 - 90 ns - 1300 nC - 27 Amps IRRM Reverse Recovery Time Qrr Reverse Recovery Charge IF = 75A, diF/dt = -200A/µs VR = 400V, TC = 125°C Maximum Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM VR = 400V, TC = 25°C Maximum Reverse Recovery Current trr IRRM IF = 75A, diF/dt = -200A/µs IF = 75A, diF/dt = -1000A/µs VR = 400V, TC = 125°C Maximum Reverse Recovery Current ns nC - - Amps Amps D = 0.9 0.30 0.25 0.7 0.20 0.5 Note: 0.15 0.3 0.10 t1 t2 t 0.05 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC 0.1 SINGLE PULSE 0.05 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 24a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION RC MODEL Junction temp (°C) 0.129 0.0107 0.211 0.120 10-2005 10 -4 Rev B 10 -5 Power (watts) Case temperature (°C) FIGURE 24b, TRANSIENT THERMAL IMPEDANCE MODEL 050-7620 0 PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 0.35 180 160 160 140 120 100 TJ = 125°C 80 60 TJ = 25°C TJ = 175°C 40 TJ = -55°C 20 0 0 0.5 1 1.5 2 2.5 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 25. Forward Current vs. Forward Voltage Qrr, REVERSE RECOVERY CHARGE (nC) 1800 T = 125°C J V = 400V 1600 R 1400 150A 1200 75A 1000 800 37.5A 600 400 200 0 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 27. Reverse Recovery Charge vs. Current Rate of Change trr, REVERSE RECOVERY TIME (ns) 180 0.8 trr 0.6 0.4 Qrr CJ, JUNCTION CAPACITANCE (pF) 80 60 40 30 T = 125°C J V = 400V 150A R 25 37.5A 20 15 10 75A 5 Duty cycle = 0.5 T = 175°C J 120 100 80 60 40 20 0 600 10-2005 37.5A 100 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 28. Reverse Recovery Current vs. Current Rate of Change IF(AV) (A) Kf, DYNAMIC PARAMETERS (Normalized to 1000A/µs) IRRM 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 29. Dynamic Parameters vs. Junction Temperature Rev B 75A 120 0 trr 0.2 050-7620 140 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/µs) Figure 26. Reverse Recovery Time vs. Current Rate of Change Qrr 1.0 500 400 300 200 100 0 R 140 1.2 T = 125°C J V = 400V 150A 0 1.4 0.0 APT75GN60LDQ3(G) 20 IRRM, REVERSE RECOVERY CURRENT (A) IF, FORWARD CURRENT (A) 200 1 10 100 200 VR, REVERSE VOLTAGE (V) Figure 31. Junction Capacitance vs. Reverse Voltage 0 25 50 75 100 125 150 175 Case Temperature (°C) Figure 30. Maximum Average Forward Current vs. CaseTemperature TYPICAL PERFORMANCE CURVES APT75GN60LDQ3(G) Vr diF /dt Adjust +18V APT60GT60BR 0V D.U.T. 30µH trr/Qrr Waveform PEARSON 2878 CURRENT TRANSFORMER Figure 32. Diode Test Circuit 1 IF - Forward Conduction Current 2 diF /dt - Rate of Diode Current Change Through Zero Crossing. 3 IRRM - Maximum Reverse Recovery Current. 4 trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. 5 1 4 Zero 5 3 0.25 IRRM 2 Qrr - Area Under the Curve Defined by IRRM and trr. Figure 33, Diode Reverse Recovery Waveform and Definitions TO-264(L) Package Outline e1 SAC: Tin, Silver, Copper Collector (Cathode) 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.79 (.228) 6.20 (.244) 25.48 (1.003) 26.49 (1.043) 2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842) 2.29 (.090) 2.69 (.106) Gate Collector (Cathode) Dimensions in Millimeters and (Inches) APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. Rev B 5.45 (.215) BSC 2-Plcs. 050-7620 0.48 (.019) 0.76 (.030) 0.84 (.033) 1.30 (.051) 2.79 (.110) 2.59 (.102) 3.18 (.125) 3.00 (.118) 10-2005 Emitter (Anode)