APT200GN60JDQ4 600V TYPICAL PERFORMANCE CURVES APT200GN60JDQ4 ® C G ISOTOP ® • 600V Field Stop • • • • • E E Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. Low gate charge simplifies gate drive design and minimizes losses Trench Gate: Low VCE(on) Easy Paralleling 5µs Short Circuit Capability Intergrated Gate Resistor: Low EMI, High Reliability 175°C Rated S OT 22 7 "UL Recognized" file # E145592 C G E Applications: welding, inductive heating, solar inverters, motor drives, UPS, pass transistor MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter APT200GN60JDQ4 VCES Collector-Emitter Voltage 600 VGE Gate-Emitter Voltage ±20 I C1 Continuous Collector Current @ TC = 25°C 283 I C2 Continuous Collector Current @ TC = 110°C 158 I CM SSOA PD TJ,TSTG Pulsed Collector Current 1 UNIT Volts Amps 600 Switching Safe Operating Area @ TJ = 175°C 600A @600V Total Power Dissipation Operating and Storage Junction Temperature Range 682 Watts -55 to 175 °C STATIC ELECTRICAL CHARACTERISTICS V(BR)CES Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 4mA) 600 VGE(TH) Gate Threshold Voltage (VCE = VGE, I C = 3.2mA, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 200A, Tj = 25°C) VCE(ON) I CES I GES RGINT TYP MAX 5 5.8 6.5 1.05 1.45 1.85 Collector-Emitter On Voltage (VGE = 15V, I C = 200A, Tj = 125°C) 1.65 Collector-Emitter On Voltage (VGE = 15V, I C = 100A, Tj = 25°C) 1.15 Collector-Emitter On Voltage (VGE = 15V, I C = 100A, Tj = 125°C) 1.19 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 50 2 600 2 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com Volts µA TBD Gate-Emitter Leakage Current (VGE = ±20V) Intergrated Gate Resistor UNIT nA Ω 3-2005 MIN Rev B Characteristic / Test Conditions 050-7611 Symbol APT200GN60JDQ4 Symbol Test Conditions Characteristic Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate-to-Emitter Plateau Voltage 3 Qg Total Gate Charge Qge Gate-Emitter Charge Qgc Gate-Collector ("Miller ") Charge SSOA SCSOA td(on) tr td(off) tf Eon1 8.2 VGE = 15V 1180 VGE = V nC A 5 µs 80 ns 560 I C = 200A 100 RG = 1.0Ω 7 13 TJ = +25°C 5 pF 600 50 4 UNIT 660 7, VCC = 400V Current Fall Time MAX 85 Inductive Switching (25°C) Turn-off Delay Time mJ 15 6 11 Turn-on Delay Time Inductive Switching (125°C) 50 VCC =400V 80 Current Rise Time Turn-off Delay Time VGE = 15V 620 RG = 1.0Ω 7 70 14 I C = 200A Current Fall Time Turn-on Switching Energy Eon2 Turn-on Switching Energy (Diode) Turn-off Switching Energy Gate Charge VGE = 15V Eon1 Eoff 4000 VCC = 360V, VGE = 15V, Current Rise Time Turn-off Switching Energy tf f = 1 MHz TJ = 150°C, R G = 1.0Ω 7 Turn-on Delay Time Eoff td(off) 4610 15V, L = 100µH, VCE = 600V Turn-on Switching Energy (Diode) tr VGE = 0V, VCE = 25V TJ = 175°C, R G = 1.0Ω Eon2 td(on) 14100 I C = 100A Short Circuit Safe Operating Area TYP Capacitance VCE = 300V Switching Safe Operating Area Turn-on Switching Energy MIN 44 55 TJ = +125°C ns 16 66 mJ 10 THERMAL AND MECHANICAL CHARACTERISTICS Symbol MIN TYP MAX RθJC Junction to Case (IGBT) .22 RθJC Junction to Case (DIODE) .33 VIsolation WT Torque 1 Characteristic RMS Voltage (50-60Hz Sinusoidal Wavefom from Terminals to Mounting Base for 1 Min.) Package Weight Maximum Terminal & Mounting Torque 2500 UNIT °C/W Volts 1.03 oz 29.2 gm 10 Ib•in 1.1 N•m Repetitive Rating: Pulse width limited by maximum junction temperature. 3 See MIL-STD-750 Method 3471. Rev B 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 050-7611 3-2005 2 For Combi devices, Ices includes both IGBT and FRED leakages 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance, not including RG(int) nor gate driver impedance. (MIC4452) APT Reserves the right to change, without notice, the specifications and information contained herein. TYPICAL PERFORMANCE CURVES TJ = -55°C TJ = 25°C 300 TJ = 125°C 250 TJ = 175°C 200 150 100 50 0 IC, COLLECTOR CURRENT (A) TJ = -55°C TJ = 25°C 300 TJ = 125°C 250 200 150 100 TJ = 175°C 50 0 0 250 9V 200 8.5V 150 8V 100 7.5V 50 7V FIGURE 2, Output Characteristics (TJ = 125°C) 16 VGE, GATE-TO-EMITTER VOLTAGE (V) 250µs PULSE TEST<0.5 % DUTY CYCLE 12V 0 5 10 15 20 25 30 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics(TJ = 25°C) 350 300 0 0 0.5 1.0 1.5 2.0 2.5 3.0 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) 400 15V 13V 350 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) = 15V J VCE = 120V 12 VCE = 300V 10 VCE = 480V 8 6 4 2 0 2 4 6 8 10 12 VGE, GATE-TO-EMITTER VOLTAGE (V) I = 200A C T = 25°C 14 0 200 TJ = 25°C. 250µs PULSE TEST <0.5 % DUTY CYCLE 2.0 IC = 150A 1.5 IC = 75A 1.0 0.5 0 8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage FIGURE 4, Gate Charge VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) IC = 300A 2.5 3.0 2.5 IC = 150A 1.5 0.5 0 350 0.95 0.90 0.85 0.80 0.75 0.70 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, Threshold Voltage vs. Junction Temperature VGE = 15V. 250µs PULSE TEST <0.5 % DUTY CYCLE 25 50 75 100 125 150 175 TJ, Junction Temperature (°C) FIGURE 6, On State Voltage vs Junction Temperature 1.10 1.00 IC = 75A 1.0 400 1.05 IC = 300A 2.0 1.15 IC, DC COLLECTOR CURRENT(A) VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics 3.0 400 600 800 1000 1200 1400 GATE CHARGE (nC) 0 300 250 200 150 100 50 0 -50 -25 0 25 50 75 100 125 150 175 TC, CASE TEMPERATURE (°C) FIGURE 8, DC Collector Current vs Case Temperature 3-2005 GE Rev B V 350 APT200GN60JDQ4 400 050-7611 400 30 20 VCE = 400V 10 T = 25°C, or 125°C J RG = 1.0Ω L = 100µH 700 600 500 VGE =15V,TJ=125°C VGE =15V,TJ=25°C 400 300 200 V = 400V 100 RCE= 1.0Ω G 0 L = 100µH 120 160 200 240 280 320 80 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 120 160 200 240 280 320 80 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 180 250 40 RG = 1.0Ω, L = 100µH, VCE = 400V 160 40 200 140 tr, RISE TIME (ns) td (OFF), TURN-OFF DELAY TIME (ns) 40 TJ = 25 or 125°C,VGE = 15V 120 tf, FALL TIME (ns) td(ON), TURN-ON DELAY TIME (ns) VGE = 15V 50 0 APT200GN60JDQ4 800 60 100 80 60 40 150 TJ = 25°C, VGE = 15V 100 TJ = 125°C, VGE = 15V 50 20 0 0 30,000 G TJ = 125°C 25,000 20,000 15,000 10,000 TJ = 25°C 5,000 J 50,000 Eon2,300A 40,000 Eoff,200A 30,000 Eon2,200A 20,000 Eoff,100A 10,000 0 Eon2,100A 20 15 10 5 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance 0 TJ = 125°C 15,000 10,000 5,000 TJ = 25°C 35,000 Eoff,300A SWITCHING ENERGY LOSSES (µJ) SWITCHING ENERGY LOSSES (µJ) 3-2005 Rev B 050-7611 60,000 G 20,000 80 120 160 200 240 280 320 40 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 80 120 160 200 240 280 320 40 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current = 400V V CE = +15V V GE T = 125°C = 400V V CE = +15V V GE R = 1.0Ω 0 0 70,000 40 25,000 = 400V V CE = +15V V GE R = 1.0Ω EOFF, TURN OFF ENERGY LOSS (µJ) EON2, TURN ON ENERGY LOSS (µJ) 35,000 RG = 1.0Ω, L = 100µH, VCE = 400V 80 120 160 200 240 280 320 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 80 120 160 200 240 280 320 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 40 = 400V V CE = +15V V GE R = 1.0Ω 30,000 Eon2,300A G 25,000 Eoff,300A 20,000 Eon2,200A 15,000 Eoff,200A 10,000 Eon2,100A 5,000 0 Eoff,100A 125 100 75 50 25 TJ, JUNCTION TEMPERATURE (°C) FIGURE 16, Switching Energy Losses vs Junction Temperature 0 TYPICAL PERFORMANCE CURVES 20,000 5000 P C, CAPACITANCE ( F) IC, COLLECTOR CURRENT (A) Cies 10,000 1000 500 APT200GN60JDQ4 700 C0es 600 500 400 300 200 Cres 100 0 100 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage 0 100 200 300 400 500 600 700 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area D = 0.9 0.20 0.7 0.15 0.5 Note: 0.10 PDM ZθJC, THERMAL IMPEDANCE (°C/W) 0.25 0.3 t2 0.05 t SINGLE PULSE 0.1 0 t1 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC 0.05 10-5 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 10 Power (watts) 0.132 0.0414 0.0120 0.483 8.30 Case temperature. (°C) FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL F = min (fmax, fmax2) 0.05 fmax1 = td(on) + tr + td(off) + tf 10 1 T = 125°C J T = 75°C C D = 50 % V = 400V CE R = 1.0Ω G 40 max fmax2 = Pdiss - Pcond Eon2 + Eoff Pdiss = TJ - TC RθJC 60 80 100 120 140 160 180 200 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current 3-2005 0.0463 Rev B RC MODEL 050-7611 Junction temp. (°C) FMAX, OPERATING FREQUENCY (kHz) 60 APT200GN60JDQ4 APT100DQ60 Gate Voltage 10% TJ = 125°C td(on) tr V CE IC V CC Collector Current 90% 5% A Switching Energy D.U.T. 90% Gate Voltage TJ = 125°C td(off) 90% tf 10% 0 Collector Voltage Switching Energy Rev B 3-2005 Figure 23, Turn-off Switching Waveforms and Definitions 050-7611 5% Collector Voltage Figure 22, Turn-on Switching Waveforms and Definitions Figure 21, Inductive Switching Test Circuit Collector Current 10% TYPICAL PERFORMANCE CURVES APT200GN60JDQ4 ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE MAXIMUM RATINGS Symbol IF(AV) IF(RMS) IFSM All Ratings: TC = 25°C unless otherwise specified. APT200GN60LDQ4 Characteristic / Test Conditions Maximum Average Forward Current (TC = 108°C, Duty Cycle = 0.5) 100 RMS Forward Current (Square wave, 50% duty) 156 Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) UNIT Amps 1000 STATIC ELECTRICAL CHARACTERISTICS Symbol VF Characteristic / Test Conditions MIN Forward Voltage TYP IF = 200A 2.0 IF = 400A 2.6 IF = 200A, TJ = 125°C MAX UNIT Volts 1.67 DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions trr Reverse Recovery Time trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM IF = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C Reverse Recovery Time Qrr Reverse Recovery Charge IF = 100A, diF/dt = -200A/µs VR = 400V, TC = 125°C Maximum Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM VR = 400V, TC = 25°C Maximum Reverse Recovery Current trr IRRM IF = 100A, diF/dt = -200A/µs IF = 100A, diF/dt = -1000A/µs VR = 400V, TC = 125°C Maximum Reverse Recovery Current MIN TYP MAX UNIT - 34 - 160 - 290 - 5 - 220 ns - 1530 nC - 13 - 100 ns - 2890 nC - 44 Amps ns nC - - Amps Amps D = 0.9 0.30 0.25 0.7 0.20 0.5 Note: 0.15 PDM 0.3 0.10 t1 t2 0.05 0 10-5 t 0.1 0.05 0.05 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC SINGLE SINGLE PULSE PULSE 10-4 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (seconds) FIGURE 24a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION RC MODEL 0.0182 0.188 0.361 0.0743 5.17 Case temperature (°C) FIGURE 24b, TRANSIENT THERMAL IMPEDANCE MODEL Rev B Power (watts) 0.0673 3-2005 Junction temp (°C) 050-7611 Z JC, THERMAL IMPEDANCE (°C/W) θ 0.35 300 trr, REVERSE RECOVERY TIME (ns) TJ = 25°C 250 IF, FORWARD CURRENT (A) APT200GN60JDQ4 300 200 TJ = 175°C 150 TJ = 125°C 100 50 T =125°C J V =400V R 250 200A 200 100A 50A 150 100 50 TJ = -55°C 0 0 0.5 1.0 1.5 2.0 2.5 3.0 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 25. Forward Current vs. Forward Voltage 0 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/µs) Figure 26. Reverse Recovery Time vs. Current Rate of Change 60 T =125°C J V =400V 3500 R 200A 3000 100A 2500 2000 50A 1500 1000 500 0 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 27. Reverse Recovery Charge vs. Current Rate of Change 0.6 IRRM Qrr CJ, JUNCTION CAPACITANCE (pF) 3-2005 Rev B Duty cycle = 0.5 T =175°C J 100 80 60 40 20 0 1400 050-7611 10 120 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 29. Dynamic Parameters vs. Junction Temperature 1200 1000 800 600 400 200 0 50A 20 140 0.2 0.0 100A 30 160 trr 0.4 200A 40 180 trr 0.8 R 50 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 28. Reverse Recovery Current vs. Current Rate of Change Qrr 1.0 T =125°C J V =400V 0 IF(AV) (A) Kf, DYNAMIC PARAMETERS (Normalized to 1000A/µs) 1.2 IRRM, REVERSE RECOVERY CURRENT (A) Qrr, REVERSE RECOVERY CHARGE (nC) 4000 1 10 100 200 VR, REVERSE VOLTAGE (V) Figure 31. Junction Capacitance vs. Reverse Voltage 0 25 50 75 100 125 150 175 Case Temperature (°C) Figure 30. Maximum Average Forward Current vs. CaseTemperature TYPICAL PERFORMANCE CURVES APT200GN60JDQ4 Vr diF /dt Adjust +18V APT60M75L2LL 0V D.U.T. 30µH trr/Qrr Waveform PEARSON 2878 CURRENT TRANSFORMER Figure 32. Diode Test Circuit 1 IF - Forward Conduction Current 2 diF /dt - Rate of Diode Current Change Through Zero Crossing. 3 IRRM - Maximum Reverse Recovery Current. 4 trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. 5 1 4 Zero 5 3 0.25 IRRM 2 Qrr - Area Under the Curve Defined by IRRM and trr. Figure 33, Diode Reverse Recovery Waveform and Definitions SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 14.9 (.587) 15.1 (.594) 1.95 (.077) 2.14 (.084) * Emitter/Anode 30.1 (1.185) 30.3 (1.193) Collector/Cathode * Emitter/Anode terminals are shorted internally. Current handling capability is equal for either Emitter/Anode terminal. 38.0 (1.496) 38.2 (1.504) * Emitter/Anode Gate Dimensions in Millimeters and (Inches) ISOTOP® is a Registered Trademark of SGS Thomson. APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 3-2005 3.3 (.129) 3.6 (.143) Rev B r = 4.0 (.157) (2 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 050-7611 7.8 (.307) 8.2 (.322)