VISHAY SUD70N03-04P

SUD70N03-04P
Vishay Siliconix
N-Channel 30-V (D-S) 175_C MOSFET
FEATURES
D TrenchFETr Power MOSFET
D 175_C Junction Temperature
D Optimized for Low-Side Synchronous
Rectifier Operation
D 100% Rg Tested
PRODUCT SUMMARY
rDS(on) (W)
ID (A)a
0.0043 @ VGS = 10 V
33
0.0065 @ VGS = 4.5 V
27
VDS (V)
30
APPLICATIONS
D
D DC/DC Converters
D Synchronous Rectifiers
TO-252
Drain Connected to Tab
G
D
G
S
Top View
S
Ordering Information: SUD70N03-04P
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
"20
TA = 25_C
Continuous Drain Currenta
TC = 25_C
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
TC = 25_C
Maximum Power Dissipation
TA = 25_C
Operating Junction and Storage Temperature Range
Unit
V
33
ID
70b
IDM
100
IS
8.3a
A
88
PD
W
8.3a
TJ, Tstg
−55 to 175
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction
Junction-to-Ambient
to Ambienta
Maximum Junction-to-Case
Symbol
t v 10 sec
Steady State
RthJA
RthJC
Typical
Maximum
15
18
40
50
1.2
1.5
Unit
_C/W
C/W
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
b. Limited by package.
Document Number: 72237
S-40841—Rev. B, 03-May-04
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SUD70N03-04P
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Typa
Symbol
Test Condition
Min
Max
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
VGS(th)
VDS = VGS, ID = 250 mA
1.0
IGSS
VDS = 0 V, VGS = "20 V
"100
VDS = 30 V, VGS = 0 V
1
VDS = 30 V, VGS = 0 V, TJ = 125_C
50
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currentb
ID(on)
VDS = 5 V, VGS = 10 V
A
0.0043
0.0051
0.0065
0.007
VGS = 4.5 V, ID = 20 A
Forward Transconductanceb
gfs
mA
0.0035
VGS = 10 V, ID = 20 A, TJ = 125_C
rDS(on)
nA
50
VGS = 10 V, ID = 20 A
Drain-Source
Drain
Source On
On-State
State Resistanceb
V
3.0
VDS = 15 V, ID = 20 A
W
20
S
Dynamica
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Gate Resistance
Rg
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs
Gate-Drain Chargec
Qgd
Turn-On Delay Timec
td(on)
Rise Timec
5100
VGS = 0 V, VDS = 25 V, f = 1 MHz
f = 1 MHz
0.5
1.0
1.5
90
135
W
18
VDS = 15 V, VGS = 10 V, ID = 50 A
nC
16
VDD = 15 V, RL = 0.3 W
ID ^ 50 A, VGEN = 10 V, Rg = 2.5 W
td(off)
Fall Timec
pF
p
430
tr
Turn-Off Delay Timec
860
tf
12
20
12
20
40
60
10
15
ns
Source-Drain Diode Ratings and Characteristic (TC = 25_C)
Pulsed Current
ISM
Diode Forward Voltageb
VSD
IF = 100 A, VGS = 0 V
1.2
1.5
V
trr
IF = 50 A, di/dt = 100 A/ms
40
80
ns
Source-Drain Reverse Recovery Time
100
A
Notes
a. Guaranteed by design, not subject to production testing.
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
a. Independent of operating temperature.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
200
200
VGS = 10 thru 5 V
150
I D − Drain Current (A)
I D − Drain Current (A)
160
4V
120
80
40
100
TC = 125_C
50
25_C
3V
−55_C
0
0
0
2
4
6
8
VDS − Drain-to-Source Voltage (V)
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2
10
0
1
2
3
4
5
6
VGS − Gate-to-Source Voltage (V)
Document Number: 72237
S-40841—Rev. B, 03-May-04
SUD70N03-04P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Transconductance
On-Resistance vs. Drain Current
180
0.010
RDS(on) − On-Resistance (W)
GFS − Transconductance (S)
TC = −55_C
150
25_C
120
125_C
90
60
30
0
0.008
0.006
VGS = 4.5 V
0.004
VGS = 10 V
0.002
0.000
0
20
40
60
80
100
0
20
40
ID − Drain Current (A)
Ciss
4000
2000
Coss
Crss
100
80
100
Gate Charge
10
V GS − Gate-to-Source Voltage (V)
C − Capacitance (pF)
6000
80
ID − Drain Current (A)
Capacitance
8000
60
0
8
VDS = 15 V
ID = 50 A
6
4
2
0
0
6
12
18
24
30
0
20
VDS − Drain-to-Source Voltage (V)
1.8
40
60
Qg − Total Gate Charge (nC)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
100
1.4
I S − Source Current (A)
rDS(on) − On-Resiistance
(Normalized)
1.6
VGS = 10 V
ID = 20 A
1.2
1.0
TJ = 150_C
TJ = 25_C
10
0.8
0.6
−50
−25
0
25
50
75
100
125
TJ − Junction Temperature (_C)
Document Number: 72237
S-40841—Rev. B, 03-May-04
150
175
1
0
0.3
0.6
0.9
1.2
1.5
VSD − Source-to-Drain Voltage (V)
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SUD70N03-04P
Vishay Siliconix
THERMAL RATINGS
Maximum Avalanche and Drain Current vs.
Ambient Temperature
Safe Operating Area
1000
40
Limited
by rDS(on)
10 ms
100 ms
100
I D − Drain Current (A)
I D − Drain Current (A)
32
24
16
8
10
1 ms
10 ms
100 ms
1
Single Pulse
TA = 25_C
0.1
0
0
25
50
75
100
125
150
1s
10 s
100 s
DC
0.01
175
0.1
1
10
100
VDS − Drain-to-Source Voltage (V)
TA − Ambient Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10−4
10−3
10−2
10−1
1
10
100
1000
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10−4
10−3
10−2
10−1
1
10
100
Square Wave Pulse Duration (sec)
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Document Number: 72237
S-40841—Rev. B, 03-May-04