SUD50N024-06P New Product Vishay Siliconix N-Channel 22-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)d 0.006 @ VGS = 10 V 80 0.0095 @ VGS = 4.5 V 64 VDS (V) 24C D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized for High Efficiency APPLICATIONS D D Synchronous Buck DC/DC Conversion - Desktop - Server TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD50N024-06P S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit VDS(pulse) 24C Drain-Source Voltage VDS 22 Gate-Source Voltage VGS "20 Drain-Source Pulse Voltage TC= 100_C Pulsed Drain Current Continuous Source Current (Diode Conduction)a Avalanche Current, Single Pulse L = 0.1 mH Avalanche Energy, Single Pulse ID 56d IDM 100 IS 26 IAS 45 EAS 101 TC = 25_C Operating Junction and Storage Temperature Range A mJ 6.8a TA = 25_C Maximum Power Dissipation V 80d TC = 25_C Continuous Drain Currenta Unit PD W 65 TJ, Tstg _C - 55 to 175 THERMAL RESISTANCE RATINGS Parameter Maximum Junction Junction-to-Ambient to Ambienta Maximum Junction-to-Case Symbol t v 10 sec Steady State RthJA RthJC Typical Maximum 18 22 40 50 1.9 2.3 Unit _C/W C/W Notes a. Surface Mounted on FR4 Board, t v 10 sec. b. Limited by package c. Pulse condition: TA = 105_C, 50 ns, 300 kHz operation d. Calculation based on maximum allowable Junction Temperature. Package limitation current is 50 A. Document Number: 72289 S-31398—Rev. A, 30-Jun-03 www.vishay.com 1 SUD50N024-06P New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Typa Symbol Test Condition Min Max V(BR)DSS VGS = 0 V, ID = 250 mA 22 VGS(th) VDS = VGS, ID = 250 mA 0.8 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 16 V, VGS = 0 V 1 VDS = 16 V, VGS = 0 V, TJ = 125_C 50 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V 0.006 gfs W 0.0084 VGS = 4.5 V, ID = 20 A Forward Transconductanceb mA A 0.0046 VGS = 10 V, ID = 20 A, TJ = 125_C rDS(on) nA 50 VGS = 10 V, ID = 20 A Drain-Source Drain Source On On-State State Resistanceb V 3.0 0.0073 VDS = 15 V, ID = 20 A 0.0095 15 S Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 415 Gate Resistance RG 1.5 Total Gate Chargec Qg 19 Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Turn-On Delay Timec td(on) Rise Timec 2550 VGS = 0 V, VDS = 10 V, f = 1 MHz W 30 nC 6.0 VDD = 10 V, RL = 0.2 W ID ^ 50 A, VGEN = 10 V, RG = 2.5 W td(off) Fall Timec pF p 7.5 VDS = 10 V, VGS = 4.5 V, ID = 50 A tr Turn-Off Delay Timec 900 tf 11 20 10 15 24 35 9 15 ns Source-Drain Diode Ratings and Characteristic (TC = 25_C) Pulsed Current ISM Diode Forward Voltageb VSD IF = 50 A, VGS = 0 V 1.2 1.5 V trr IF = 50 A, di/dt = 100 A/ms 35 70 ns Source-Drain Reverse Recovery Time 100 A Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 100 160 140 VGS = 10 thru 5 V 80 I D - Drain Current (A) I D - Drain Current (A) 120 4V 100 80 60 3V 40 60 40 TC = 125_C 20 25_C 20 2V - 55_C 0 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) www.vishay.com 2 10 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VGS - Gate-to-Source Voltage (V) Document Number: 72289 S-31398—Rev. A, 30-Jun-03 SUD50N024-06P New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Transconductance On-Resistance vs. Drain Current 100 0.010 80 r DS(on)- On-Resistance ( W ) g fs - Transconductance (S) TC = - 55_C 25_C 125_C 60 40 20 0.008 VGS = 4.5 V 0.006 VGS = 6.3 V 0.004 VGS = 10 V 0.002 0 0.000 0 10 20 30 40 50 0 20 40 ID - Drain Current (A) 80 100 32 40 ID - Drain Current (A) Capacitance Gate Charge 10 3500 V GS - Gate-to-Source Voltage (V) 3000 Ciss C - Capacitance (pF) 60 2500 2000 1500 Coss 1000 Crss 500 VDS = 10 V ID = 50 A 8 6 4 2 0 0 0 4 8 12 16 0 20 8 VDS - Drain-to-Source Voltage (V) 16 24 Qg - Total Gate Charge (nC) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 1.6 100 1.4 I S - Source Current (A) r DS(on)- On-Resistance ( W ) (Normalized) VGS = 10 V ID = 30 A 1.2 1.0 TJ = 150_C TJ = 25_C 10 0.8 0.6 - 50 1 - 25 0 25 50 75 100 125 TJ - Junction Temperature (_C) Document Number: 72289 S-31398—Rev. A, 30-Jun-03 150 175 0 0.3 0.6 0.9 1.2 1.5 VSD - Source-to-Drain Voltage (V) www.vishay.com 3 SUD50N024-06P New Product Vishay Siliconix THERMAL RATINGS Maximum Drain Current vs. Ambiemt Temperature Safe Operating Area 1000 40 Limited by rDS(on) 10, 100 ms 100 I D - Drain Current (A) I D - Drain Current (A) 32 24 16 8 1 ms 10 10 ms TA = 25_C Single Pulse 0.1 0 100 ms 1s 10 s 100 s dc 1 0.01 0 25 50 75 100 125 150 175 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) TA - Ambient Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 1000 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 72289 S-31398—Rev. A, 30-Jun-03