VISHAY SUD50N024-06

SUD50N024-06P
New Product
Vishay Siliconix
N-Channel 22-V (D-S) 175_C MOSFET
FEATURES
PRODUCT SUMMARY
rDS(on) (W)
ID (A)d
0.006 @ VGS = 10 V
80
0.0095 @ VGS = 4.5 V
64
VDS (V)
24C
D TrenchFETr Power MOSFET
D 175_C Junction Temperature
D PWM Optimized for High Efficiency
APPLICATIONS
D
D Synchronous Buck DC/DC Conversion
- Desktop
- Server
TO-252
G
Drain Connected to Tab
G
D
S
Top View
Order Number:
SUD50N024-06P
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
VDS(pulse)
24C
Drain-Source Voltage
VDS
22
Gate-Source Voltage
VGS
"20
Drain-Source Pulse Voltage
TC= 100_C
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Avalanche Current, Single Pulse
L = 0.1 mH
Avalanche Energy, Single Pulse
ID
56d
IDM
100
IS
26
IAS
45
EAS
101
TC = 25_C
Operating Junction and Storage Temperature Range
A
mJ
6.8a
TA = 25_C
Maximum Power Dissipation
V
80d
TC = 25_C
Continuous Drain Currenta
Unit
PD
W
65
TJ, Tstg
_C
- 55 to 175
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction
Junction-to-Ambient
to Ambienta
Maximum Junction-to-Case
Symbol
t v 10 sec
Steady State
RthJA
RthJC
Typical
Maximum
18
22
40
50
1.9
2.3
Unit
_C/W
C/W
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
b. Limited by package
c. Pulse condition: TA = 105_C, 50 ns, 300 kHz operation
d. Calculation based on maximum allowable Junction Temperature. Package limitation current is 50 A.
Document Number: 72289
S-31398—Rev. A, 30-Jun-03
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1
SUD50N024-06P
New Product
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Typa
Symbol
Test Condition
Min
Max
V(BR)DSS
VGS = 0 V, ID = 250 mA
22
VGS(th)
VDS = VGS, ID = 250 mA
0.8
IGSS
VDS = 0 V, VGS = "20 V
"100
VDS = 16 V, VGS = 0 V
1
VDS = 16 V, VGS = 0 V, TJ = 125_C
50
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currentb
ID(on)
VDS = 5 V, VGS = 10 V
0.006
gfs
W
0.0084
VGS = 4.5 V, ID = 20 A
Forward Transconductanceb
mA
A
0.0046
VGS = 10 V, ID = 20 A, TJ = 125_C
rDS(on)
nA
50
VGS = 10 V, ID = 20 A
Drain-Source
Drain
Source On
On-State
State Resistanceb
V
3.0
0.0073
VDS = 15 V, ID = 20 A
0.0095
15
S
Dynamica
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
415
Gate Resistance
RG
1.5
Total Gate Chargec
Qg
19
Gate-Source Chargec
Qgs
Gate-Drain Chargec
Qgd
Turn-On Delay Timec
td(on)
Rise Timec
2550
VGS = 0 V, VDS = 10 V, f = 1 MHz
W
30
nC
6.0
VDD = 10 V, RL = 0.2 W
ID ^ 50 A, VGEN = 10 V, RG = 2.5 W
td(off)
Fall Timec
pF
p
7.5
VDS = 10 V, VGS = 4.5 V, ID = 50 A
tr
Turn-Off Delay Timec
900
tf
11
20
10
15
24
35
9
15
ns
Source-Drain Diode Ratings and Characteristic (TC = 25_C)
Pulsed Current
ISM
Diode Forward Voltageb
VSD
IF = 50 A, VGS = 0 V
1.2
1.5
V
trr
IF = 50 A, di/dt = 100 A/ms
35
70
ns
Source-Drain Reverse Recovery Time
100
A
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
c. Independent of operating temperature.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
100
160
140
VGS = 10 thru 5 V
80
I D - Drain Current (A)
I D - Drain Current (A)
120
4V
100
80
60
3V
40
60
40
TC = 125_C
20
25_C
20
2V
- 55_C
0
0
2
4
6
8
VDS - Drain-to-Source Voltage (V)
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2
10
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
VGS - Gate-to-Source Voltage (V)
Document Number: 72289
S-31398—Rev. A, 30-Jun-03
SUD50N024-06P
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Transconductance
On-Resistance vs. Drain Current
100
0.010
80
r DS(on)- On-Resistance ( W )
g fs - Transconductance (S)
TC = - 55_C
25_C
125_C
60
40
20
0.008
VGS = 4.5 V
0.006
VGS = 6.3 V
0.004
VGS = 10 V
0.002
0
0.000
0
10
20
30
40
50
0
20
40
ID - Drain Current (A)
80
100
32
40
ID - Drain Current (A)
Capacitance
Gate Charge
10
3500
V GS - Gate-to-Source Voltage (V)
3000
Ciss
C - Capacitance (pF)
60
2500
2000
1500
Coss
1000
Crss
500
VDS = 10 V
ID = 50 A
8
6
4
2
0
0
0
4
8
12
16
0
20
8
VDS - Drain-to-Source Voltage (V)
16
24
Qg - Total Gate Charge (nC)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
1.6
100
1.4
I S - Source Current (A)
r DS(on)- On-Resistance ( W )
(Normalized)
VGS = 10 V
ID = 30 A
1.2
1.0
TJ = 150_C
TJ = 25_C
10
0.8
0.6
- 50
1
- 25
0
25
50
75
100
125
TJ - Junction Temperature (_C)
Document Number: 72289
S-31398—Rev. A, 30-Jun-03
150
175
0
0.3
0.6
0.9
1.2
1.5
VSD - Source-to-Drain Voltage (V)
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SUD50N024-06P
New Product
Vishay Siliconix
THERMAL RATINGS
Maximum Drain Current vs.
Ambiemt Temperature
Safe Operating Area
1000
40
Limited
by rDS(on)
10, 100 ms
100
I D - Drain Current (A)
I D - Drain Current (A)
32
24
16
8
1 ms
10
10 ms
TA = 25_C
Single Pulse
0.1
0
100 ms
1s
10 s
100 s
dc
1
0.01
0
25
50
75
100
125
150
175
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
TA - Ambient Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
10
100
1000
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
10
100
Square Wave Pulse Duration (sec)
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Document Number: 72289
S-31398—Rev. A, 30-Jun-03