VISHAY SUD25N04-25

SUD25N04-25
Vishay Siliconix
N-Channel 40-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
VDS (V)
40
rDS(on) (W)
ID (A)
0.025 @ VGS = 10 V
25
0.040 @ VGS = 4.5 V
20
D
TO-252
G
Drain Connected to Tab
G
D
S
Top View
Order Number:
SUD25N04-25
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
40
Gate-Source Voltage
VGS
"20
Continuous Drain Current (TJ = 175_C)
_ b
TC = 25_C
TC = 125_C
Pulsed Drain Current
15
IDM
50
IS
50
Avalanche Current
IAR
25
L = 0.1 mH
EAR
TA = 25_C
Operating Junction and Storage Temperature Range
A
31
mJ
33b
TC = 25_C
Maximum Power Dissipation
V
25
ID
Continuous Source Current (Diode Conduction)b
Repetitive Avalanche Energy (Duty Cycle v 1%)
Unit
PD
W
3b
TJ, Tstg
_C
–55 to 175
THERMAL RESISTANCE RATINGS
Parameter
Symbol
t v 10 sec
Junction-to-Ambientb
Junction-to-Case
Steady State
RthJA
RthJC
Typical
Maximum
20
25
40
50
3.7
4.5
Unit
_C/W
C/W
Notes
a. Surface Mounted on 1” x1” FR4 Board.
b. See SOA curve for voltage derating.
Document Number: 71129
S-04558—Rev. B, 27-Aug-01
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SUD25N04-25
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Typa
Max
2.0
3.0
Symbol
Test Condition
Min
V(BR)DSS
VGS = 0 V, ID = 250 mA
40
VGS(th)
VDS = VGS, ID = 250 mA
1.0
IGSS
VDS = 0 V, VGS = "20 V
"100
VDS = 40 V, VGS = 0 V
1
VDS = 40 V, VGS = 0 V, TJ = 125_C
50
VDS = 40 V, VGS = 0 V, TJ = 175_C
150
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
IDSS
ID(on)
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 25 A
Drain-Source On-State Resistanceb
Forward Transconductanceb
rDS(on)
gfs
V
50
nA
mA
m
A
0.02
0.025
VGS = 10 V, ID = 25 A, TJ = 125_C
0.040
VGS = 10 V, ID = 25 A, TJ = 175_C
0.053
VGS = 4.5 V, ID = 10 A
0.031
VDS = 15 V, ID = 25 A
15
W
0.040
S
Dynamica
Input Capacitance
Ciss
510
VGS = 0 V, VDS = 25 V, F = 1 MHz
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
65
Total Gate Chargec
Qg
13
Gate-Source
Chargec
Qgs
VDS = 20 V, VGS = 10 V, ID = 25 A
125
pF
20
2.5
nC
Gate-Drain Chargec
Qgd
3
Turn-On Delay Timec
td(on)
5
10
47
70
15
30
5
10
Rise
Timec
tr
Turn-Off Delay Timec
Fall Timec
td(off)
VDD = 20 V, RL = 0.8 W
ID ^ 25 A, VGEN = 10 V, RG = 2.5 W
tf
ns
Source-Drain Diode Ratings and Characteristic (TC = 25_C)
Pulsed Current
ISM
50
A
Voltageb
VSD
IF = 25 A, VGS = 0 V
1.1
1.3
V
Source-Drain Reverse Recovery Time
trr
IF = 25 A, di/dt = 100 A/ms
17
30
ns
Diode Forward
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
c. Independent of operating temperature.
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Document Number: 71129
S-04558—Rev. B, 27-Aug-01
SUD25N04-25
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
100
50
VGS = 10 V
TC = –55_C
9V
80
40
25_C
I D – Drain Current (A)
I D – Drain Current (A)
8V
7V
60
6V
40
5V
20
30
125_C
20
10
2, 3, 4 V
0
0
0
2
4
6
8
10
0
VDS – Drain-to-Source Voltage (V)
1
2
3
4
5
6
VGS – Gate-to-Source Voltage (V)
Transconductance
On-Resistance vs. Drain Current
0.12
25
TC = –55_C
0.10
r DS(on)– On-Resistance ( W )
g fs – Transconductance (S)
20
25_C
15
125_C
10
5
0
0.08
0.06
VGS = 4.5 V
0.04
VGS = 10 V
0.02
0.00
0
10
20
30
0
40
10
20
ID – Drain Current (A)
40
50
20
25
ID – Drain Current (A)
Capacitance
Gate Charge
20
V GS – Gate-to-Source Voltage (V)
1000
800
C – Capacitance (pF)
30
600
Ciss
400
Coss
200
Crss
0
0
VDS = 20 V
ID = 25 A
16
12
8
4
0
8
16
24
32
VDS – Drain-to-Source Voltage (V)
Document Number: 71129
S-04558—Rev. B, 27-Aug-01
40
0
5
10
15
Qg – Total Gate Charge (nC)
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SUD25N04-25
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
2.4
100
VGS = 10 V
ID = 25 A
I S – Source Current (A)
r DS(on)– On-Resistance ( W )
(Normalized)
2.0
1.6
1.2
0.8
TJ = 175_C
10
TJ = 25_C
0.4
0.0
–50
1
–25
0
25
50
75
100
125
150
175
0
TJ – Junction Temperature (_C)
0.3
0.6
0.9
1.2
VSD – Source-to-Drain Voltage (V)
THERMAL RATINGS
Maximum Avalanche Drain Current
vs. Case Temperature
Safe Operating Area
30
100
100 ms
I D – Drain Current (A)
I D – Drain Current (A)
10 ms
Limited by rDS(on)
24
18
12
10
1 ms
10 ms
100 ms
1 s, dc
1
TC = 25_C
Single Pulse
6
0
0.1
0
25
50
75
100
125
150
175
0.1
1
10
100
VDS – Drain-to-Source Voltage (V)
TC – Case Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Case
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10–4
10–3
10–2
10–1
1
10
30
Square Wave Pulse Duration (sec)
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Document Number: 71129
S-04558—Rev. B, 27-Aug-01