SUD25N04-25 Vishay Siliconix N-Channel 40-V (D-S) 175_C MOSFET PRODUCT SUMMARY VDS (V) 40 rDS(on) (W) ID (A) 0.025 @ VGS = 10 V 25 0.040 @ VGS = 4.5 V 20 D TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD25N04-25 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 40 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 175_C) _ b TC = 25_C TC = 125_C Pulsed Drain Current 15 IDM 50 IS 50 Avalanche Current IAR 25 L = 0.1 mH EAR TA = 25_C Operating Junction and Storage Temperature Range A 31 mJ 33b TC = 25_C Maximum Power Dissipation V 25 ID Continuous Source Current (Diode Conduction)b Repetitive Avalanche Energy (Duty Cycle v 1%) Unit PD W 3b TJ, Tstg _C –55 to 175 THERMAL RESISTANCE RATINGS Parameter Symbol t v 10 sec Junction-to-Ambientb Junction-to-Case Steady State RthJA RthJC Typical Maximum 20 25 40 50 3.7 4.5 Unit _C/W C/W Notes a. Surface Mounted on 1” x1” FR4 Board. b. See SOA curve for voltage derating. Document Number: 71129 S-04558—Rev. B, 27-Aug-01 www.vishay.com 2-1 SUD25N04-25 Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Typa Max 2.0 3.0 Symbol Test Condition Min V(BR)DSS VGS = 0 V, ID = 250 mA 40 VGS(th) VDS = VGS, ID = 250 mA 1.0 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 40 V, VGS = 0 V 1 VDS = 40 V, VGS = 0 V, TJ = 125_C 50 VDS = 40 V, VGS = 0 V, TJ = 175_C 150 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb IDSS ID(on) VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 25 A Drain-Source On-State Resistanceb Forward Transconductanceb rDS(on) gfs V 50 nA mA m A 0.02 0.025 VGS = 10 V, ID = 25 A, TJ = 125_C 0.040 VGS = 10 V, ID = 25 A, TJ = 175_C 0.053 VGS = 4.5 V, ID = 10 A 0.031 VDS = 15 V, ID = 25 A 15 W 0.040 S Dynamica Input Capacitance Ciss 510 VGS = 0 V, VDS = 25 V, F = 1 MHz Output Capacitance Coss Reverse Transfer Capacitance Crss 65 Total Gate Chargec Qg 13 Gate-Source Chargec Qgs VDS = 20 V, VGS = 10 V, ID = 25 A 125 pF 20 2.5 nC Gate-Drain Chargec Qgd 3 Turn-On Delay Timec td(on) 5 10 47 70 15 30 5 10 Rise Timec tr Turn-Off Delay Timec Fall Timec td(off) VDD = 20 V, RL = 0.8 W ID ^ 25 A, VGEN = 10 V, RG = 2.5 W tf ns Source-Drain Diode Ratings and Characteristic (TC = 25_C) Pulsed Current ISM 50 A Voltageb VSD IF = 25 A, VGS = 0 V 1.1 1.3 V Source-Drain Reverse Recovery Time trr IF = 25 A, di/dt = 100 A/ms 17 30 ns Diode Forward Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. www.vishay.com 2-2 Document Number: 71129 S-04558—Rev. B, 27-Aug-01 SUD25N04-25 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 100 50 VGS = 10 V TC = –55_C 9V 80 40 25_C I D – Drain Current (A) I D – Drain Current (A) 8V 7V 60 6V 40 5V 20 30 125_C 20 10 2, 3, 4 V 0 0 0 2 4 6 8 10 0 VDS – Drain-to-Source Voltage (V) 1 2 3 4 5 6 VGS – Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 0.12 25 TC = –55_C 0.10 r DS(on)– On-Resistance ( W ) g fs – Transconductance (S) 20 25_C 15 125_C 10 5 0 0.08 0.06 VGS = 4.5 V 0.04 VGS = 10 V 0.02 0.00 0 10 20 30 0 40 10 20 ID – Drain Current (A) 40 50 20 25 ID – Drain Current (A) Capacitance Gate Charge 20 V GS – Gate-to-Source Voltage (V) 1000 800 C – Capacitance (pF) 30 600 Ciss 400 Coss 200 Crss 0 0 VDS = 20 V ID = 25 A 16 12 8 4 0 8 16 24 32 VDS – Drain-to-Source Voltage (V) Document Number: 71129 S-04558—Rev. B, 27-Aug-01 40 0 5 10 15 Qg – Total Gate Charge (nC) www.vishay.com 2-3 SUD25N04-25 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 2.4 100 VGS = 10 V ID = 25 A I S – Source Current (A) r DS(on)– On-Resistance ( W ) (Normalized) 2.0 1.6 1.2 0.8 TJ = 175_C 10 TJ = 25_C 0.4 0.0 –50 1 –25 0 25 50 75 100 125 150 175 0 TJ – Junction Temperature (_C) 0.3 0.6 0.9 1.2 VSD – Source-to-Drain Voltage (V) THERMAL RATINGS Maximum Avalanche Drain Current vs. Case Temperature Safe Operating Area 30 100 100 ms I D – Drain Current (A) I D – Drain Current (A) 10 ms Limited by rDS(on) 24 18 12 10 1 ms 10 ms 100 ms 1 s, dc 1 TC = 25_C Single Pulse 6 0 0.1 0 25 50 75 100 125 150 175 0.1 1 10 100 VDS – Drain-to-Source Voltage (V) TC – Case Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 10 30 Square Wave Pulse Duration (sec) www.vishay.com 2-4 Document Number: 71129 S-04558—Rev. B, 27-Aug-01