SUP/SUB70N04-10 Vishay Siliconix N-Channel 40-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (W) ID (A) 0.010 @ VGS = 10 V 70 0.014 @ VGS = 4.5 V 58 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB70N04-10 Top View N-Channel MOSFET SUP70N04-10 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 40 Gate-Source Voltage VGS "20 TC = 25_C Continuous Drain Current (TJ = 175_C) _ TC = 100_C Pulsed Drain Current V 70 ID 47 IDM Avalanche Current Unit A 140 IAR 60 Repetitive Avalanche Energya L = 0.1 mH EAR 180 mJ Power Dissipation TC = 25_C PD 107b W TJ, Tstg –55 to 175 _C Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter Symbol PCB Mount (TO-263)c Junction-to-Ambient Junction-to-Case Free Air (TO-220) RthJA RthJC Typical Maximum 35 40 45 50 1.2 1.4 Unit _C/W C/W Notes: a. Duty cycle v 1%. b. See SOA curve for voltage derating. c. Surface mounted on 1” FR4 board. Document Number: 70783 S-05110—Rev. D, 10-Dec-01 www.vishay.com 2-1 SUP/SUB70N04-10 Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max V(BR)DSS VGS = 0 V, ID = 250 mA 40 VGS(th) VDS = VGS, IDS = 250 mA 1 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 40 V, VGS = 0 V 1 VDS = 40 V, VGS = 0 V, TJ = 125_C 50 VDS = 40 V, VGS = 0 V, TJ = 175_C 150 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea IDSS ID(on) rDS(on) gfs VDS = 5 V, VGS = 10 V 3 70 VGS = 10 V, ID = 30 A 0.008 0.010 0.014 0.017 VGS = 10 V, ID = 30 A, TJ = 175_C 0.0175 0.022 VGS = 4.5 V, ID = 20 A 0.011 0.014 VGS = 4.5 V, ID = 20 A, TJ = 125_C 0.019 0.024 VGS = 4.5 V, ID = 20 A, TJ = 175_C 0.024 0.031 20 nA mA m A VGS = 10 V, ID = 30 A, TJ = 125_C VDS = 15 V, ID = 30 A V 57 W S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reversen Transfer Capacitance Crss 160 Total Gate Chargec Qg 50 Gate-Source Chargec Qgs 10 Gate-Drain Chargec Qgd 9 Turn-On Delay Timec td(on) 14 30 tr VDD = 15 V, RL = 0.2 W 12 30 td(off) ID ] 70 A, VGEN = 10 V, RG = 2.5 W 58 100 30 60 Rise Timec Turn-Off Delay Timec Fall Timec 2700 VGS = 0 V, VDS = 25 V, f = 1 MHz VDS = 15 V, VGS = 10 V, ID = 70 A tf 600 pF 100 nC ns Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current Is 70 Pulsed Current ISM 140 Forward Voltagea VSD IF = 70 A, VGS = 0 V 1.0 1.5 V trr IF = 70 A, di/dt = 100 A/ms 50 100 ns Reverse Recovery Time A Notes: a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2-2 Document Number: 70783 S-05110—Rev. D, 10-Dec-01 SUP/SUB70N04-10 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 150 150 TC = –55_C VGS = 10 thru 6 V 5V 120 I D – Drain Current (A) I D – Drain Current (A) 120 90 4V 60 30 25_C 125_C 90 60 30 3V 0 0 0 2 4 6 8 10 0 VDS – Drain-to-Source Voltage (V) 1 2 3 4 5 6 7 VGS – Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 100 0.030 TC = –55_C g fs – Transconductance (S) r DS(on) – On-Resistance ( Ω ) 25_C 80 125_C 60 40 20 0 0.024 0.018 VGS = 4.5 V 0.012 VGS = 10 V 0.006 0.000 0 20 40 60 80 100 120 0 20 40 VGS – Gate-to-Source Voltage (V) 80 100 120 ID – Drain Current (A) Capacitance Gate Charge 10 V GS – Gate-to-Source Voltage (V) 4000 Ciss 3200 C – Capacitance (pF) 60 2400 1600 Coss 800 Crss 0 VGS = 15 V ID = 70 A 8 6 4 2 0 0 8 16 24 32 VDS – Drain-to-Source Voltage (V) Document Number: 70783 S-05110—Rev. D, 10-Dec-01 40 0 10 20 30 40 50 Qg – Total Gate Charge (nC) www.vishay.com 2-3 SUP/SUB70N04-10 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 2.5 100 2.0 TJ = 150_C I S – Source Current (A) r DS(on) – On-Resistance ( Ω ) (Normalized) VGS = 10 V ID = 30 A 1.5 1.0 TJ = 25_C 10 0.5 0.0 –50 1 –25 0 25 50 75 100 125 150 175 0.0 0.2 TJ – Junction Temperature (_C) 0.4 0.6 0.8 1.0 1.2 1.4 VSD – Source-to-Drain Voltage (V) THERMAL RATINGS Maximum Drain Current vs. Ambiemt Temperature Safe Operating Area 200 80 10 ms 100 Limited by rDS(on) I D – Drain Current (A) I D – Drain Current (A) 60 40 20 0 100 ms 10 1 ms 10 ms 100 ms dc TC = 25_C Single Pulse 1 0.1 0 25 50 75 100 125 150 175 0.1 TA – Ambient Temperature (_C) 1 10 VDS – Drain-to-Source Voltage (V) 50 Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–5 10–4 10–3 10–2 10–1 1 3 Square Wave Pulse Duration (sec) www.vishay.com 2-4 Document Number: 70783 S-05110—Rev. D, 10-Dec-01