SUP60N10-16L Vishay Siliconix N-Channel 100-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 100 rDS(on) (W) ID (A) 0.016 @ VGS = 10 V 60 0.018 @ VGS = 4.5 V 56 D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized APPLICATIONS D DC/DC Primary Side Switch D TO-220AB G DRAIN connected to TAB G D S S Top View SUP60N10-16L N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 100 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 175_C) TC = 25_C TC = 125_C Pulsed Drain Current Avalanche Current Unit V 60 ID 35 IDM 100 IAR 40 A Repetitive Avalanche Energya L = 0.1 mH EAR 80 Maximum Power Dissipationa TC = 25_C PD 150b W TJ, Tstg - 55 to 175 _C Symbol Limit Unit Junction-to-Ambient (Free Air) RthJA 62.5 Junction-to-Case RthJC 1.0 Operating Junction and Storage Temperature Range mJ THERMAL RESISTANCE RATINGS Parameter _C/W Notes a. Duty cycle v 1%. b. See SOA curve for voltage derating. c. When mounted on 1” square PCB (FR-4 material). Document Number: 71928 S-03600—Rev. B, 31-Mar-03 www.vishay.com 1 SUP60N10-16L Vishay Siliconix SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max V(BR)DSS VGS = 0 V, ID = 250 mA 100 VGS(th) VDS = VGS, ID = 250 mA 1 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 80 V, VGS = 0 V 1 Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage g Drain Current On-State Drain Currenta Drain-Source On-State Resistancea IDSS ID(on) rDS(on) V 3 VDS = 80 V, VGS = 0 V, TJ = 125_C 50 VDS = 80 V, VGS = 0 V, TJ = 175_C 250 VDS w 5 V, VGS = 10 V 100 VGS = 10 V, ID = 30 A 0.0125 0.016 VGS = 4.5 V, ID = 20 A 0.014 0.018 VDS = 15 V, ID = 30 A W 0.030 VGS = 10 V, ID = 30 A, TJ = 175_C gfs mA m A VGS = 10 V, ID = 30 A, TJ = 125_C Forward Transconductancea nA 0.040 25 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 210 Total Gate Chargec Qg 73 Gate-Source Chargec Qgs 15 Gate-Drain Chargec Qgd 20 Gate Resistance RG 1.5 td(on) 12 25 90 135 55 85 130 195 Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec tr td(off) 3820 VGS = 0 V, VDS = 25 V, f = 1 MHz VDS = 50 V,, VGS = 10 V,, ID = 60 A VDD = 50 V, RL = 0.83 W ID ^ 60 A, VGEN = 10 V, RG = 2.5 W tf 450 pF 110 nC W ns Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current IS 60 Pulsed Current ISM 100 Forward Voltagea VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = 60 A, VGS = 0 V trr IRM(REC) Qrr IF = 50 A,, di/dt = 100 A/ms m A 1.0 1.5 V 62 100 ns 3.1 5 A 0.10 0.25 mC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2 Document Number: 71928 S-03600—Rev. B, 31-Mar-03 SUP60N10-16L Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 120 120 VGS = 10 thru 6 V 5V I D - Drain Current (A) I D - Drain Current (A) 100 90 60 30 80 60 40 TC = 125_C 20 4V 25_C 3V - 55_C 0 0 2 4 6 8 0 0.0 10 0.5 VDS - Drain-to-Source Voltage (V) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VGS - Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 0.030 160 r DS(on) - On-Resistance ( W ) g fs - Transconductance (S) TC = - 55_C 25_C 120 125_C 80 40 0 0.025 0.020 VGS = 4.5 V 0.015 VGS = 10 V 0.010 0.005 0.000 0 10 20 30 40 50 60 70 80 90 0 20 40 ID - Drain Current (A) 80 100 ID - Drain Current (A) Capacitance Gate Charge 6000 10 V GS - Gate-to-Source Voltage (V) 5000 C - Capacitance (pF) 60 Ciss 4000 3000 2000 1000 Crss Coss 0 VDS = 50 V ID = 60 A 8 6 4 2 0 0 20 40 60 80 VDS - Drain-to-Source Voltage (V) Document Number: 71928 S-03600—Rev. B, 31-Mar-03 100 0 10 20 30 40 50 60 70 80 Qg - Total Gate Charge (nC) www.vishay.com 3 SUP60N10-16L Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 2.5 100 2.0 I S - Source Current (A) r DS(on) - On-Resistance (W) (Normalized) VGS = 10 V ID = 30 A 1.5 1.0 TJ = 25_C TJ = 150_C 10 0.5 0.0 - 50 - 25 0 25 50 75 100 125 150 1 0 175 0.3 TJ - Junction Temperature (_C) 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) Drain Source Breakdown vs. Junction Temperature 130 125 V(BR)DSS (V) ID = 10 mA 120 115 110 105 100 95 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (_C) www.vishay.com 4 Document Number: 71928 S-03600—Rev. B, 31-Mar-03 SUP60N10-16L Vishay Siliconix THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature Safe Operating Area 1000 80 70 100 I D - Drain Current (A) I D - Drain Current (A) 60 50 40 30 20 100 ms 10 Limited by rDS(on) 1 ms 10 ms 100 ms dc 1 10 0 10 ms TC = 25_C Single Pulse 0.1 0 25 50 75 100 125 150 175 0.1 1 10 100 1000 VDS - Drain-to-Source Voltage (V) TC - Ambient Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (sec) Document Number: 71928 S-03600—Rev. B, 31-Mar-03 www.vishay.com 5