VISHAY SUP60N10-16L

SUP60N10-16L
Vishay Siliconix
N-Channel 100-V (D-S) 175_C MOSFET
FEATURES
PRODUCT SUMMARY
V(BR)DSS (V)
100
rDS(on) (W)
ID (A)
0.016 @ VGS = 10 V
60
0.018 @ VGS = 4.5 V
56
D TrenchFETr Power MOSFET
D 175_C Junction Temperature
D PWM Optimized
APPLICATIONS
D DC/DC Primary Side Switch
D
TO-220AB
G
DRAIN connected to TAB
G D S
S
Top View
SUP60N10-16L
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
100
Gate-Source Voltage
VGS
"20
Continuous Drain Current (TJ = 175_C)
TC = 25_C
TC = 125_C
Pulsed Drain Current
Avalanche Current
Unit
V
60
ID
35
IDM
100
IAR
40
A
Repetitive Avalanche Energya
L = 0.1 mH
EAR
80
Maximum Power Dissipationa
TC = 25_C
PD
150b
W
TJ, Tstg
- 55 to 175
_C
Symbol
Limit
Unit
Junction-to-Ambient (Free Air)
RthJA
62.5
Junction-to-Case
RthJC
1.0
Operating Junction and Storage Temperature Range
mJ
THERMAL RESISTANCE RATINGS
Parameter
_C/W
Notes
a. Duty cycle v 1%.
b. See SOA curve for voltage derating.
c. When mounted on 1” square PCB (FR-4 material).
Document Number: 71928
S-03600—Rev. B, 31-Mar-03
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SUP60N10-16L
Vishay Siliconix
SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
V(BR)DSS
VGS = 0 V, ID = 250 mA
100
VGS(th)
VDS = VGS, ID = 250 mA
1
IGSS
VDS = 0 V, VGS = "20 V
"100
VDS = 80 V, VGS = 0 V
1
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage
g Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
IDSS
ID(on)
rDS(on)
V
3
VDS = 80 V, VGS = 0 V, TJ = 125_C
50
VDS = 80 V, VGS = 0 V, TJ = 175_C
250
VDS w 5 V, VGS = 10 V
100
VGS = 10 V, ID = 30 A
0.0125
0.016
VGS = 4.5 V, ID = 20 A
0.014
0.018
VDS = 15 V, ID = 30 A
W
0.030
VGS = 10 V, ID = 30 A, TJ = 175_C
gfs
mA
m
A
VGS = 10 V, ID = 30 A, TJ = 125_C
Forward Transconductancea
nA
0.040
25
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
210
Total Gate Chargec
Qg
73
Gate-Source Chargec
Qgs
15
Gate-Drain Chargec
Qgd
20
Gate Resistance
RG
1.5
td(on)
12
25
90
135
55
85
130
195
Turn-On Delay Timec
Rise
Timec
Turn-Off Delay Timec
Fall Timec
tr
td(off)
3820
VGS = 0 V, VDS = 25 V, f = 1 MHz
VDS = 50 V,, VGS = 10 V,, ID = 60 A
VDD = 50 V, RL = 0.83 W
ID ^ 60 A, VGEN = 10 V, RG = 2.5 W
tf
450
pF
110
nC
W
ns
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current
IS
60
Pulsed Current
ISM
100
Forward Voltagea
VSD
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
IF = 60 A, VGS = 0 V
trr
IRM(REC)
Qrr
IF = 50 A,, di/dt = 100 A/ms
m
A
1.0
1.5
V
62
100
ns
3.1
5
A
0.10
0.25
mC
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
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Document Number: 71928
S-03600—Rev. B, 31-Mar-03
SUP60N10-16L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
120
120
VGS = 10 thru 6 V
5V
I D - Drain Current (A)
I D - Drain Current (A)
100
90
60
30
80
60
40
TC = 125_C
20
4V
25_C
3V
- 55_C
0
0
2
4
6
8
0
0.0
10
0.5
VDS - Drain-to-Source Voltage (V)
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
VGS - Gate-to-Source Voltage (V)
Transconductance
On-Resistance vs. Drain Current
0.030
160
r DS(on) - On-Resistance ( W )
g fs - Transconductance (S)
TC = - 55_C
25_C
120
125_C
80
40
0
0.025
0.020
VGS = 4.5 V
0.015
VGS = 10 V
0.010
0.005
0.000
0
10
20
30
40
50
60
70
80
90
0
20
40
ID - Drain Current (A)
80
100
ID - Drain Current (A)
Capacitance
Gate Charge
6000
10
V GS - Gate-to-Source Voltage (V)
5000
C - Capacitance (pF)
60
Ciss
4000
3000
2000
1000
Crss
Coss
0
VDS = 50 V
ID = 60 A
8
6
4
2
0
0
20
40
60
80
VDS - Drain-to-Source Voltage (V)
Document Number: 71928
S-03600—Rev. B, 31-Mar-03
100
0
10
20
30
40
50
60
70
80
Qg - Total Gate Charge (nC)
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SUP60N10-16L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
2.5
100
2.0
I S - Source Current (A)
r DS(on) - On-Resistance (W)
(Normalized)
VGS = 10 V
ID = 30 A
1.5
1.0
TJ = 25_C
TJ = 150_C
10
0.5
0.0
- 50
- 25
0
25
50
75
100
125
150
1
0
175
0.3
TJ - Junction Temperature (_C)
0.6
0.9
1.2
VSD - Source-to-Drain Voltage (V)
Drain Source Breakdown vs.
Junction Temperature
130
125
V(BR)DSS (V)
ID = 10 mA
120
115
110
105
100
95
- 50
- 25
0
25
50
75
100
125
150
175
TJ - Junction Temperature (_C)
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Document Number: 71928
S-03600—Rev. B, 31-Mar-03
SUP60N10-16L
Vishay Siliconix
THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature
Safe Operating Area
1000
80
70
100
I D - Drain Current (A)
I D - Drain Current (A)
60
50
40
30
20
100 ms
10
Limited
by rDS(on)
1 ms
10 ms
100 ms
dc
1
10
0
10 ms
TC = 25_C
Single Pulse
0.1
0
25
50
75
100
125
150
175
0.1
1
10
100
1000
VDS - Drain-to-Source Voltage (V)
TC - Ambient Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Case
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
10
Square Wave Pulse Duration (sec)
Document Number: 71928
S-03600—Rev. B, 31-Mar-03
www.vishay.com
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