SUM70N03-09CP New Product Vishay Siliconix N-Channel 30-V (D-S), 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.0095 @ VGS = 10 V 70 0.014 @ VGS = 4.5 V 58 D TrenchFETr Power MOSFET D Optimized for High- or Low-Side D New Low Thermal Resistance Package APPLICATIONS D DC/DC Converters D Synchronous Rectifiers D TO-263 G DRAIN connected to TAB G D S Top View S SUM70N03-09CP N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS "10 TC = 25_C Continuous Drain Current (TJ = 175_C) _ TC = 125_C Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya L = 0.1 mH TC = 25_C Maximum Power Dissipationa TA = 25_Cc Operating Junction and Storage Temperature Range Unit V 70 ID 40 IDM 100 IAR 35 EAR 61b A mJ 93 PD 3.75 W TJ, Tstg -55 to 175 _C Symbol Limit Unit THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient Junction-to-Case PCB Mountc RthJA 40 RthJC 1.6 _ _C/W Notes a. Duty cycle v 1%. b. See SOA curve for voltage derating. c. When mounted on 1” square PCB (FR-4 material). Document Number: 71943 S-21647—Rev. B, 23-Sep-02 www.vishay.com 1 SUM70N03-09CP New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Typa Symbol Test Condition Min Max V(BR)DSS VGS = 0 V, ID = 250 mA 30 VGS(th) VDS = VGS, ID = 250 mA 1.0 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 24 V, VGS = 0 V 1 VDS = 24 V, VGS = 0 V, TJ = 125_C 250 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V 0.0095 gfs W 0.015 VGS = 4.5 V, ID = 20 A Forward Transconductanceb m mA A 0.0076 VGS = 10 V, ID = 20 A, TJ = 175_C rDS(on) nA 100 VGS = 10 V, ID = 20 A Drain-Source On-State Resistanceb V 3.0 0.0115 VDS = 15 V, ID = 20 A 0.014 20 S Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 180 Gate Resistance RG 1.5 Total Gate Chargec Qg 31 Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Turn-On Delay Timec td(on) Rise Timec 2200 VGS = 0 V, VDS = 25 V, f = 1 MHz W 45 nC 5.0 VDD = 15 V, RL = 0.3 W ID ^ 50 A, VGEN = 10 V, RG = 2.5 W td(off) Fall Timec pF 7.5 VDS = 15 V, VGS = 10 V, ID = 50 A tr Turn-Off Delay Timec 410 tf 9 15 80 120 22 35 8 12 ns Source-Drain Diode Ratings and Characteristic (TC = 25_C) Pulsed Current ISM Diode Forward Voltageb VSD IF = 50 A, VGS = 0 V 1.2 1.5 V trr IF = 50 A, di/dt = 100 A/ms 35 70 ns Source-Drain Reverse Recovery Time 100 A Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 120 120 VGS = 10 thru 6 V 5V 90 I D - Drain Current (A) I D - Drain Current (A) 90 4V 60 30 60 TC = 125_C 30 3V 25_C -55 _C 2V 0 0 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) www.vishay.com 2 10 0 1 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) Document Number: 71943 S-21647—Rev. B, 23-Sep-02 SUM70N03-09CP New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Transconductance On-Resistance vs. Drain Current 0.05 r DS(on)- On-Resistance ( W ) g fs - Transconductance (S) 100 80 TC = -55_C 25_C 60 125_C 40 20 0.04 0.03 0.02 VGS = 4.5 V VGS = 10 V 0.01 0 0.00 0 10 20 30 40 50 0 20 40 ID - Drain Current (A) 60 80 100 24 30 ID - Drain Current (A) Capacitance Gate Charge 3000 10 V GS - Gate-to-Source Voltage (V) Ciss C - Capacitance (pF) 2500 2000 1500 1000 Coss Crss 500 VDS = 15 V ID = 30 A 8 6 4 2 0 0 0 5 10 15 20 25 30 0 6 VDS - Drain-to-Source Voltage (V) 12 18 Qg - Total Gate Charge (nC) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 2.0 100 1.6 I S - Source Current (A) r DS(on)- On-Resistance ( W ) (Normalized) VGS = 10 V ID = 30 A 1.2 0.8 TJ = 150_C TJ = 25_C 10 0.4 0.0 -50 1 -25 0 25 50 75 100 125 TJ - Junction Temperature (_C) Document Number: 71943 S-21647—Rev. B, 23-Sep-02 150 175 0 0.3 0.6 0.9 1.2 1.5 VSD - Source-to-Drain Voltage (V) www.vishay.com 3 SUM70N03-09CP New Product Vishay Siliconix THERMAL RATINGS Maximum Drain Current vs. Ambiemt Temperature Safe Operating Area 1000 90 Limited by rDS(on) 75 10, 100 ms I D - Drain Current (A) I D - Drain Current (A) 100 60 45 30 10 1 ms 10 ms 100 ms 1 1s 10 s TA = 25_C Single Pulse 0.1 15 0 100 s dc 0.01 0 25 50 75 100 125 150 175 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) TA - Ambient Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 10 100 Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 71943 S-21647—Rev. B, 23-Sep-02