POWERSEM PSKH250

Thyristor Modules
Thyristor/Diode Modules
PSKT 250
PSKH 250
ITRMS
ITAVM
VRRM
Preliminary Data Sheet
= 2x 450 A
= 2x 287 A
= 800-1800 V
3
VRSM
VRRM
VDSM
VDRM
V
V
900
1300
1500
1700
1900
800
1200
1400
1600
1800
Type
Version 1
PSKT 250/08io1
PSKT 250/12io1
PSKT 250/14io1
PSKT 250/16io1
PSKT 250/18io1
PSKH 250/08io1
PSKH 250/12io1
PSKH 250/14io1
PSKH 250/16io1
PSKH 250/18io1
Test Conditions
ITRMS, IFRMS
ITAVM, IFAVM
TVJ = TVJM
TC = 85°C; 180° sine
ITSM, IFSM
TVJ = 45°C;
VR = 0
(di/dt)cr
(dv/dt)cr
Maximum Ratings
450
287
A
A
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
9000
9600
A
A
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
7800
8500
A
A
TVJ = 45°C
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
405 000
380 000
A 2s
A 2s
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
304 000
300 000
A2 s
A2 s
TVJ = TVJM
repetitive, IT = 860 A
f =50 Hz, tP =200 µs
VD = 2/3 VDRM
IG = 1 A
non repetitive, IT = 290 A
diG/dt = 1 A/µs
TVJ = TVJM;
VDR = 2/3 VDRM
RGK = ∞; method 1 (linear voltage rise)
tP = 30 µs
tP = 500 µs
1000
V/µs
10
V
TVJ
TVJM
Tstg
-40...+140
140
-40...+125
°C
°C
°C
3000
3600
V~
V~
Md
Mounting torque (M5)
Terminal connection torque (M8)
Weight
Typical including screws
3
1
5 42
International standard package
Direct copper bonded Al2O3 -ceramic
base plate
Planar passivated chips
Isolation voltage 3600 V~
UL registered, E 148688
Keyed gate/cathode twin pins
Applications
VRGM
t = 1 min
t=1s
●
●
PGAV
50/60 Hz, RMS
IISOL ≤ 1 mA
●
●
A/µs
5 4 2
Features
●
800
6 7 1
PSKH
A/µs
W
W
W
VISOL
TVJ = TVJM
IT = ITAVM
100
3
5
4
PSKT
●
120
60
20
PGM
7
6
1
Version 1
Symbol
∫i2dt
2
2.5-5/22-44 Nm/lb.in.
12-15/106-132 Nm/lb.in.
320
g
●
●
●
●
●
Motor control
Power converter
Heat and temperature control for
industrial furnaces and chemical
processes
Lighting control
Contactless switches
Advantages
●
●
●
●
Space and weight savings
Simple mounting with two screws
Improved temperature and power
cycling capability
Reduced protection circuits
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
 2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
Symbol
Test Conditions
IRRM
IDRM
TVJ = TVJM; VR = VRRM; VD = VDRM
VT, VF
IT, IF = 600 A; TVJ = 25°C
1.36
V
VT0
rT
For power-loss calculations only (TVJ = 140°C)
0.85
0.82
V
mΩ
VGT
VD = 6 V;
IGT
VD = 6 V;
TVJ = 25°C
TVJ = -40°C
TVJ = 25°C
TVJ = -40°C
2
3
150
200
V
V
mA
mA
VGD
IGD
TVJ = TVJM;
VD = 2/3 VDRM
0.25
10
V
mA
IL
TVJ = 25°C; tP = 30 µs; VD = 6 V
IG = 0.45 A; diG/dt = 0.45 A/µs
200
mA
IH
TVJ = 25°C; VD = 6 V; RGK = ∞
150
mA
tgd
TVJ = 25°C; VD = 1/2 VDRM
IG = 1 A; diG/dt = 1 A/µs
2
µs
tq
TVJ = TVJM; IT = 300 A, tP = 200 µs; -di/dt = 10 A/µs typ.
VR = 100 V; dv/dt = 50 V/µs; VD = 2/3 VDRM
200
µs
QS
IRM
TVJ = 125°C; IT, IF = 400 A, -di/dt = 50 A/µs
760
275
µC
A
RthJC
per
per
per
per
RthJK
Characteristic Values
thyristor/diode; DC current
module
thyristor/diode; DC current
module
Creepage distance on surface
Strike distance through air
Maximum allowable acceleration
dS
dA
a
70
40
other values
see Fig. 8/9
mA
mA
0.129
0.0645
0.169
0.0845
K/W
K/W
K/W
K/W
12.7
9.6
50
mm
mm
m/s2
Fig. 1 Gate trigger characteristics
Optional accessories for modules
Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red
Fig. 2 Gate trigger delay time
Dimensions in mm (1 mm = 0.0394")
PSKT
PSKH
Threaded spacer for higher Anode/
Cathode construction:
Type ZY 250, material brass
20
12
14
 2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
Fig. 3 Surge overload current
ITSM, IFSM: Crest value, t: duration
Fig. 4 ∫i2dt versus time (1-10 ms)
Fig. 4a Maximum forward current
at case temperature
Fig. 5 Power dissipation versus onstate current and ambient
temperature (per thyristor or
diode)
Fig. 6 Three phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
3xPSKT 250 or
3xPSKH 250
POWERSEM GmbH, Walpersdorfer Str. 53
 2002 POWERSEM reserves the right to change limits, test conditions and dimensions
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
Fig. 7 Three phase AC-controller:
Power dissipation versus RMS
output current and ambient
temperature
3xPSKT 250 or
3xPSKH 250
0.15
Fig. 8 Transient thermal impedance
junction to case (per thyristor or
diode)
30°
DC
K/W
ZthJC
RthJC for various conduction angles d:
0.10
0.05
d
RthJC (K/W)
DC
180°C
120°C
60°C
30°C
0.129
0.131
0.131
0.132
0.132
Constants for ZthJC calculation:
i
0.00
10-3
10-2
10-1
100
101
102
s
t
0.20
Rthi (K/W)
ti (s)
0.0035
0.0165
0.1091
0.099
0.168
0.456
Fig. 9 Transient thermal impedance
junction to heatsink (per thyristor
or diode)
K/W
30°
DC
ZthJK
1
2
3
RthJK for various conduction angles d:
0.15
0.10
d
RthJK (K/W)
DC
180°C
120°C
60°C
30°C
0.169
0.171
0.172
0.172
0.173
0.05
Constants for ZthJK calculation:
i
0.00
10-3
10-2
10-1
100
101
s
t
102
1
2
3
4
Rthi (K/W)
ti (s)
0.0033
0.0159
0.1053
0.04
0.099
0.168
0.456
1.36
POWERSEM GmbH, Walpersdorfer Str. 53
 2002 POWERSEM reserves the right to change limits, test conditions and dimensions
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20