ITRMS ITAVM VRRM PSKT 132 PSKH 132 Thyristor Modules Thyristor/Diode Modules = 2x 300 A = 2x 130 A = 800-1800 V Preliminary Data Sheet VRSM VRRM VDSM VDRM V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 Type 1 Version 1 Version 1 PSKT 132/08io1 PSKT 132/12io1 PSKT 132/14io1 PSKT 132/16io1 PSKT 132/18io1 PSKH PSKH PSKH PSKH PSKH Symbol Test Conditions ITRMS, IFRMS ITAVM, IFAVM TVJ = TVJM TC = 85°C; 180° sine ITSM, IFSM TVJ = 45°C; VR = 0 ∫i2dt (di/dt)cr (dv/dt)cr Maximum Ratings 300 130 A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 4750 5080 A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 4230 4530 A A TVJ = 45°C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 113 000 108 000 A 2s A 2s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 89 500 86 200 A2 s A2 s 150 A/µs TVJ = TVJM repetitive, IT = 500 A f =50 Hz, tP =200 µs VD = 2/3 VDRM IG = 0.5 A non repetitive, IT = 500 A diG/dt = 0.5 A/µs TVJ = TVJM; VDR = 2/3 VDRM RGK = ∞; method 1 (linear voltage rise) 500 A/µs 1000 V/µs 10 V TVJ TVJM Tstg -40...+125 125 -40...+125 °C °C °C 3000 3600 V~ V~ Md Weight Mounting torque (M6) Terminal connection torque (M6) Typical including screws 3 6 7 1 5 4 2 3 1 5 42 PSKT Version 1 PSKH Version 1 Features International standard package Direct copper bonded Al2O3 -ceramic base plate Planar passivated chips Isolation voltage 3600 V~ UL registered, E 148688 Keyed gate/cathode twin pins ● ● ● ● VRGM t = 1 min t=1s 4 ● PGAV 50/60 Hz, RMS IISOL ≤ 1 mA tP = 30 µs tP = 500 µs 5 ● W W W VISOL TVJ = TVJM IT = ITAVM 67 132/08io1 132/12io1 132/14io1 132/16io1 132/18io1 120 60 8 PGM 2 3 2.25-2.75/20-25 Nm/lb.in. 4.5-5.5/40-48 Nm/lb.in. 125 g Applications Motor control Power converter Heat and temperature control for industrial furnaces and chemical processes Lighting control Contactless switches ● ● ● ● ● Advantages Space and weight savings Simple mounting Improved temperature and power cycling capability Reduced protection circuits ● ● ● ● Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 Symbol Test Conditions Characteristic Values IRRM, IDRM TVJ = TVJM; VR = VRRM; VD = VDRM VT, VF IT, IF = 300 A; TVJ = 25°C VT0 rT 10 mA 1.36 V For power-loss calculations only (TVJ = 125°C) 0.8 1.5 V mΩ VGT VD = 6 V; IGT VD = 6 V; TVJ = 25°C TVJ = -40°C TVJ = 25°C TVJ = -40°C 2.5 2.6 150 200 V V mA mA VGD IGD TVJ = TVJM; VD = 2/3 VDRM 0.2 10 V mA IL TVJ = 25°C; tP = 30 µs; VD = 6 V IG = 0.5 A; diG/dt = 0.5 A/µs 300 mA IH TVJ = 25°C; VD = 6 V; RGK = ∞ 200 mA tgd TVJ = 25°C; VD = 1/2 VDRM IG = 0.5 A; diG/dt = 0.5 A/µs 2 µs tq TVJ = TVJM; IT = 160 A, tP = 200 µs; -di/dt = 10 A/µs typ. VR = 100 V; dv/dt = 20 V/µs; VD = 2/3 VDRM 150 µs QS IRM TVJ = TVJM; IT, IF = 300 A, -di/dt = 50 A/µs 550 235 µC A RthJC per per per per RthJK thyristor/diode; DC current module thyristor/diode; DC current module other values see Fig. 8/9 Creepage distance on surface Strike distance through air Maximum allowable acceleration dS dA a 0.23 0.115 0.33 0.165 K/W K/W K/W K/W 12.7 9.6 50 mm mm m/s2 Fig. 1 Gate trigger characteristics Optional accessories for modules Keyed Gate/Cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red Fig. 2 Gate trigger delay time Dimensions in mm (1 mm = 0.0394") PSKT PSKH 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 106 4000 ITSM i2t A A2s 3000 50 Hz 80 % VRRM TVJ = 45°C TVJ = 125°C 105 2000 TVJ = 45°C TVJ = 125°C 1000 0 0.001 0.01 0.1 s 1 t Fig. 3 Surge overload current ITSM, IFSM: Crest value, t: duration 104 ms 1 10 t Fig. 4 i2t versus time (1-10 ms) Fig. 4a Maximum forward current at case temperature Fig. 5 Power dissipation versus onstate current and ambient temperature (per thyristor or diode) Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature Circuit B6 3xPSKT132 or 3xPSKH 132 POWERSEM GmbH, Walpersdorfer Str. 53 2002 POWERSEM reserves the right to change limits, test conditions and dimensions D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 Fig. 7 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature Circuit W3 3xPSKT132 or 3xPSKH 132 Z thJC(t) Fig. 8 Transient thermal impedance junction to case (per thyristor or diode) RthJC for various conduction angles d: d DC 180° 120° 60° 30° RthJC (K/W) 0.230 0.244 0.255 0.283 0.321 Constants for ZthJC calculation: i 1 2 3 ZthJK(t) Rthi (K/W) ti (s) 0.0095 0.0175 0.203 0.001 0.065 0.4 Fig. 9 Transient thermal impedance junction to heatsink (per thyristor or diode) RthJK for various conduction angles d: d DC 180° 120° 60° 30° RthJK (K/W) 0.330 0.344 0.355 0.383 0.421 Constants for ZthJK calculation: i 1 2 3 4 Rthi (K/W) ti (s) 0.0095 0.0175 0.203 0.1 0.001 0.065 0.4 1.29 POWERSEM GmbH, Walpersdorfer Str. 53 2002 POWERSEM reserves the right to change limits, test conditions and dimensions D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20