POWERSEM PSMD200E

Fast Recovery
Epitaxial Diode
(FRED) Module
PSMD 200E
IFAV
VRRM
= 408 A
= 200-600V
Preliminary Data Sheet
VRSM
V
200
400
600
VRRM
V
200
400
600
Type
PSMD 200E/02
PSMD 200E/04
PSMD 200E/06
Symbol
Test Conditions
IFAV
IFSM
TC = 70°C
TVJ = 45°C
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
408
4000
4400
A
A
A
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
3600
3900
A
A
TVJ = 45°C
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
80000
80300
A2 s
A2 s
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
64800
63100
A2 s
A2 s
-40 ... + 150
150
-40 ... + 125
°C
°C
°C
∫ i2 dt
TVJ
TVJM
Tstg
VISOL
50/60 HZ, RMS
IISOL ≤ 1 mA
Maximum Ratings
t = 1 min
t=1s
V∼
V∼
5
5
270
Nm
Nm
g
Applications
• Inductive heating and melting
• Free wheeling diode in converters
and motor control circuits
• Uninterruptible power supplies
(UPS)
• Ultrasonic cleaners and welders
Advantages
• High reliability circuit operation
• Low voltage peaks for reduced
Weight
Mounting torque
Terminal connection torque
typ.
Symbol
Test Conditions
Characteristic Value
Package, style and outline
IR
VR = VRRM
TVJ = 25°C
VR = VRRM
TVJ = TVJM
IF = 200 A
TVJ = 25°C
TVJ = 25°C
For power-loss calculations only
TVJ = TVJM
per diode; DC current
per module
per diode; DC current
per module
Creeping distance on surface
Creeping distance in air
Max. allowable acceleration
≤
≤
≤
Dimensions in mm (1mm = 0.0394“)
Md
VF
trr
VTO
rT
RthJC
RthJH
dS
dA
a
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
(M6)
(M6)
2500
3000
Features
• Package with screw terminals
• Isolation voltage 3000 V∼
• Planar glasspassivated chips
• Short recovery time
• Low forward voltage drop
• Short recovery behaviour
• UL registered, E 148688
5.0
30
1.25
typ. 150
0.25
0.43
0.28
0.14
0.38
0.19
10
9.4
50
mA
mA
V
ns
V
mΩ
K/W
protection circuits
• Low noise switching
• Low losses
K/W
mm
mm
m/s2
 2003 POWERSEM reserves the right to change limits, test conditions and dimensions