Fast Recovery Epitaxial Diode (FRED) Module PSMD 200E IFAV VRRM = 312 A = 800-1200V Preliminary Data Sheet VRSM V 800 1000 1200 VRRM V 800 1000 1200 Type PSMD 200E/08 PSMD 200E/10 PSMD 200E/12 Symbol Test Conditions IFAV IFSM TC = 70°C TVJ = 45°C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 312 3200 3500 A A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 2900 3200 A A TVJ = 45°C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 51200 50800 A2 s A2 s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 42000 42500 A2 s A2 s -40 ... + 150 150 -40 ... + 125 °C °C °C ∫ i2 dt TVJ TVJM Tstg VISOL Md Weight 50/60 HZ, RMS IISOL ≤ 1 mA Maximum Ratings t = 1 min t=1s Mounting torque Terminal connection torque typ. (M6) (M6) 2500 3000 V∼ V∼ 5 5 270 Nm Nm g Features • Package with screw terminals • Isolation voltage 3000 V∼ • Planar glasspassivated chips • Short recovery time • Low forward voltage drop • Short recovery behaviour • UL registered, E 148688 Applications • Inductive heating and melting • Free wheeling diode in converters and motor control circuits • Uninterruptible power supplies (UPS) • Ultrasonic cleaners and welders Advantages • High reliability circuit operation • Low voltage peaks for reduced protection circuits • Low noise switching • Low losses Symbol Test Conditions Characteristic Value IR VR = VRRM TVJ = 25°C VR = VRRM TVJ = TVJM IF = 200 A TVJ = 25°C TVJ = 25°C For power-loss calculations only TVJ = TVJM per diode; DC current per module per diode; DC current per module Creeping distance on surface Creeping distance in air Max. allowable acceleration ≤ ≤ ≤ VF trr VTO rT RthJC RthJH dS dA a POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 3.4 35 1.55 typ. 150 0.3 0.75 0.28 0.14 0.38 0.19 10 9.4 50 mA mA V ns V mΩ K/W Package, style and outline Dimensions in mm (1mm = 0.0394“) K/W mm mm m/s2 2003 POWERSEM reserves the right to change limits, test conditions and dimensions