POWERSEM PSMG60-08

ECO-PACTM 2
MOSFET Module
PSMG 60/08
G
S
Preliminary Data Sheet
VDSS =
ID25
=
RDS(on) =
≤
trr
D
800 V
60 A
0.12 Ω
250 ns
MOSFET (data related to single chip)
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
TJ = 25 °C to 150 °C
800
V
TJ = 25 °C to 150 °C, RGS = 1 MΩ
800
V
continuous
±20
V
transient
±30
V
60
A
240
A
60
A
TC = 25 °C
64
mJ
TC = 25 °C
3
J
IS ≤ IDM, di/dt ≤ 100A/µs, VDD≤ VDSS,
5
V/ns
1200
W
-55...+150
°C
TCase = 25 °C
TCase = 25 °C, pulse width limited by TJM
TJ ≤ 150 °C, RG = 2 Ω
PD
TJ
TJM
Tstg
VISOL
VISOL
Md
TCase = 25 °C
+150
°C
-55...+150
°C
V~
50/60 Hz, RMS
t = 1 min.
2500
IISOL ≤ 1 mA
t=1s
3000
V~
1.5
Nm
14
50
26
lb.in.
m/s2
g
Mounting torque
(M4)
a
Weight
max. allowed acceleration
Symbol
Test Conditions
Characteristic Values
(TJ = 25 °C, unless otherwise specified)
VDSS
VGS(th)
VGS = 0 V, ID = 3 mA
min.
800
V
VDSS temperature coefficient
typ.
0.096
%/K
VGS = VDS, ID = 8 mA
min.
3.0
V
max.
5.0
V
-0.214
%/K
max.
± 200
nA
VGS(th) temperature coefficient typ.
IGSS
IDSS
VDS = 0 V, VGS = ± 20 V
VDS = VDSS,
TJ =
25 °C max.
100
µA
TJ = 125 °C max.
= 10 V, ID = 0.5 . ID25
2
mA
max.
0.12
Ω
VGS = 0 V,
RDS(on)
VGS
pulse test, t ≤ 300 µs,
duty cycle d ≤ 2 %
ATTENTION: All given data are derived from
similar modules or estimated from chip data.
Typical picture; changes
of the pin configuration
is reserved.
Features
•
•
•
•
•
•
•
•
Package with DCB ceramic base plate
Isolation voltage 3000 V∼
Planar glass passivated chips
Low forward voltage drop
Leads suitable for PC board
soldering
Low RDS(on) HDMOSTM process
Fast intrinsic Rectifier
UL registerd, E 148688
Applications
•
•
•
•
•
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Advantages
•
•
•
•
•
Easy to mount with two screws
Space and weight savings
Improved temperature and power
cycling capability
High power density
Small and light weight
Caution: These devices are sensitive
to electrostatic discharge. Users should
observe proper ESD handling precautions.
 2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
ECO-PACTM 2
Symbol
Test Conditions
Characteristic Values
(TJ = 25 °C, unless otherwise specified)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
RthJC
RthCK
}
}
VGS = 0 V,
typ.
15000
VDS = 25 V,
typ.
1840
pF
f = 1 MHz
typ.
440
pF
VGS = 10 V,
V = 0.5 . V
typ.
45
ns
typ.
45
ns
ID = 0.5 . ID25
typ.
100
ns
RG = 1 Ω (External)
typ.
40
ns
0.45
K/W
0.60
K/W
DS
DSS,
pF
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25 °C, unless otherwise specified)
IS
ISM
VGS = 0 V
max.
34
A
repetitive
max.
136
A
max.
1.5
V
TJ= 25 °C max.
250
ns
TJ=125 °C max.
pulse width limited by TJM
VSD
trr
QRM
IRM
IF = IS, VGS = 0 V
}
pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IF = IS,
400
ns
-di/dt = 100 A/µs, TJ= 25 °C typ.
1.4
µC
VR = 100 V
10
A
typ.
Package style and preliminary
outline
Dimensions in mm (1mm = 0.0394“)
Characteristic pin configuration;
changes of the pin configuration
is reserved.
ATTENTION: All given data are derived from similar
modules or estimated from chip data.
 2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20