ECO-PACTM 2 Power MOSFET PSHM 120/01 in ECO-PAC 2 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family L4 L6 = 75 A = 100 V Ω = 25 mΩ < 200 ns K12 A1 E10 F10 L9 P18 R18 ID25 VDSS RDSon trr NTC Preliminary Data Sheet K13 MOSFETs Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 100 100 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IDM IAR TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C 75 300 75 A A A EAR TC = 25°C 30 mJ dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω 5 V/ns PD TC = 25°C 300 W Symbol Test Conditions VDSS VGS(th) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 • VDSS; TJ = 25°C VGS = 0 V; TJ = 125°C RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t < 300 µs, duty cycle d < 2% gfs VDS = 10 V; ID = ID25, pulse test Ciss Coss Crss VGS = 0 V, VDS = 25 V, f = 1 MHz td(on) tr td(off) tf VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 RG = 2 Ω, (External) 20 60 80 60 30 110 110 90 Qg(on) Qgs Qgd VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 180 36 85 260 70 160 nC nC nC 0.5 K/W K/W RthJC RthCK Maximum Ratings Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. with heatsink compound (0.42 K/m.K; 50 µm) 100 2.0 4 V V ±100 nA 250 1 µA mA mΩ 25 25 30 Features • HiPerFETTM technology - low RDSon - low gate charge for high frequency operation - unclamped inductive switching (UIS) capability - dv/dt ruggedness - fast intrinsic reverse diode • ECO-PAC 2 package - isolated back surface - enlarged creepage towards heatsink - application friendly pinout - low inductive current path - high reliability - solderable pins for PCB mounting • UL registered, E 148688 Applications • drives and power supplies • battery or fuel cell powered pF • automotive, industrial vehicle etc. pF pF • secondary side of mains power supplies S 4500 1600 800 0.25 ns ns ns ns Caution: These Devices are sensitive to electrostatic discharge. Users should observe proper ESD handling precautions. 2005 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 ECO-PACTM 2 Source-Drain Diode Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 75 A ISM Repetitive; 300 A VSD IF = ID25, VGS = 0 V, Pulse test, t < 300 µs, duty cycle d < 2% 1.75 V t rr IF = 25 A, -di/dt = 100 A/µs, TJ = 25°C VR = 25 V TJ = 125°C 200 ns ns 300 Dimensions in mm (1 mm = 0.0394") Temperature Sensor NTC Symbol Conditions Characteristic Values min. typ. max. R25 B25/50 T = 25°C 4.75 5.0 3375 5.25 kΩ K Module Symbol Conditions TVJ Tstg Maximum Ratings -40...+150 -40...+125 °C °C 3600 V~ 1.5 - 2.0 14 - 18 50 Nm lb.in. m/s 2 VISOL IISOL ≤ 1 mA; 50/60 Hz; t = 1 s Md Mounting torque (M4) a Max. allowable acceleration Symbol Conditions Characteristic Values min. typ. max. dS dA Creepage distance on surface (Pin to heatsink) Strike distance in air (Pin to heatsink) 11.2 11.2 Weight mm mm 24 g Data according to IEC 60747 refer to a single diode or transistor unless otherwise stated 2005 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 ECO-PACTM 2 200 150 VGS = 10V TJ = 25°C 125 8V 100 7V 50 ID - Amperes 9V 150 75 50 25 6V 5V 0 100 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 TJ = 125°C 0 1 2 3 VDS - Volts 6 7 8 9 10 Fig. 2 Input Admittance 1,4 2,50 TJ = 25°C 2,25 1,2 VGS = 10V 1,1 1,0 VGS = 15V RDS(on) - Normalized 1,3 0,9 2,00 1,75 1,50 ID = 37.5A 1,25 1,00 0,75 0 20 40 60 80 0,50 -50 100 120 140 160 -25 0 ID - Amperes 50 75 100 125 150 Fig. 4 Temperature Dependence of Drain to Source Resistance 1,2 BV/VG(th) - Normalized 80 60 40 20 -50 25 TJ - Degrees C Fig. 3 RDS(on) vs. Drain Current 0 5 VGS - Volts Fig. 1 Output Characteristics 0,8 4 TJ = 25°C -25 0 25 50 75 100 125 150 TC - Degrees C Fig. 5 Drain Current vs. Case Temperature VGS(th) 1,1 BVDSS 1,0 0,9 0,8 0,7 0,6 0,5 -50 -25 0 25 50 75 100 125 150 TJ - Degrees C Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage 2005 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 ECO-PACTM 2 10 VDS = 50V ID = 37.5A IG = 1mA 9 8 100 ID - Amperes 7 6 5 GS 10 Limited by RDS(on) 4 3 1 1m 1 10 10 2 1 0 0 25 50 75 1 100 125 150 175 200 10 100 Gate Charge - nCoulombs VDS - Volts Fig.7 Gate Charge Characteristic Curve Fig.8 Forward Bias Safe Operating Area 6000 150 5000 125 IS - Amperes Ciss 4000 f = 1MHz VDS = 25V 3000 2000 Coss 100 1000 0 1 75 50 TJ = 125°C TJ = 25°C 0,50 1,00 25 Crss 0 5 10 15 20 0 25 0,00 0,25 VDS - Volts 0,75 1,25 1,50 VSD - Volt Fig.9 Capacitance Curves Fig.10 Source Current vs. Source to Drain Voltage D=0.5 0,1 D=0.2 D=0.1 D=0.05 0,01 D=0.02 D=0.01 Single pulse 0,001 0,00001 0,0001 0,001 Fig.11 Transient Thermal Impedance 0,01 0,1 1 10 Time - Seconds 2005 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20