Fast Recovery Epitaxial Diode (FRED) Module PSND 50E IFAV VRRM = 50 A = 800-1200 V Preliminary Data Sheet VRSM V 800 1000 1200 VRRM V 800 1000 1200 Type PSND 50E/08 PSND 50E/10 PSND 50E/12 Symbol Test Conditions IFAV IFSM TC = 85°C TVJ = 45°C VR = 0 ∫ i2 dt TVJ TVJM Tstg VISOL Maximum Ratings t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 50 600 660 A A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 540 590 A A TVJ = 45°C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1800 1800 A2 s A2 s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1450 1440 A2 s A2 s -40 ... + 150 150 -40 ... + 125 °C °C °C 2500 3000 V∼ V∼ 5 5 160 Nm Nm g 50/60 HZ, RMS IISOL ≤ 1 mA t = 1 min t=1s Applications • Inductive heating and melting • Free wheeling diode in converters and motor control circuits • Uninterruptible power supplies (UPS) • Ultrasonic cleaners and welders Advantages • High reliability circuit operation • Low voltage peaks for reduced Weight Mounting torque Terminal connection torque typ. Symbol Test Conditions Characteristic Value Package, style and outline IR VR = VRRM TVJ = 25°C VR = VRRM TVJ = TVJM IF = 50 A TVJ = 25°C TVJ = 25°C, IF = 1A; -di/dt = 100 A/µs; VR = 30V For power-loss calculations only TVJ = TVJM per diode; DC current per module per diode; DC current per module Creeping distance on surface Creeping distance in air Max. allowable acceleration ≤ ≤ ≤ Dimensions in mm (1mm = 0.0394“) Md VF trr VTO rT RthJC RthJK dS dA a POWERSEM GmbH, Walpersdorfer Str. 56 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 (M5) (M5) Features • Package with screw terminals • Isolation voltage 3000 V∼ • Planar glasspassivated chips • Short recovery time • Low forward voltage drop • Short recovery behaviour • UL registered, E 148688 150 15 2.0 typ. 100 µA mA V ns 1.1 2.6 0.9 0.45 1.1 0.55 10 9.4 50 V mΩ K/W K/W K/W K/W mm mm m/s2 protection circuits • Low noise switching • Low losses 2003 POWERSEM reserves the right to change limits, test conditions and dimensions