APT77N60BC6
APT77N60SC6
600V
COOLMOS
77A 0.041Ω
Super Junction MOSFET
Power Semiconductors
TO
• Ultra Low RDS(ON)
-2
47
D3PAK
• Low Miller Capacitance
• Ultra Low Gate Charge, Qg
• Avalanche Energy Rated
• Extreme dv/dt Rated
D
• Popular TO-247 or Surface Mount D3 package.
G
S
All Ratings per die: TC = 25°C unless otherwise specified.
MAXIMUM RATINGS
Symbol
VDSS
ID
Parameter
APT77N60B_SC6
UNIT
Drain-Source Voltage
600
Volts
Continuous Drain Current @ TC = 25°C
77
Continuous Drain Current @ TC = 100°C
49
1
Amps
272
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±20
Volts
PD
Total Power Dissipation @ TC = 25°C
481
Watts
TJ,TSTG
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
EAS
Single Pulse Avalanche Energy
- 55 to 150
°C
300
2
13.4
2
Amps
2.96
( Id =13.4A, Vdd = 50V )
mJ
1954
( Id = 13.4A, Vdd = 50V )
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions
BV(DSS)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250μA)
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
MIN
3
TYP
MAX
600
Volts
.037
(VGS = 10V, ID = 44.4A)
UNIT
.041
Ohms
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V, TC = 25°C)
25
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V, TC = 150°C)
250
Gate-Source Leakage Current (VGS = ±20V, VDS = 0V)
±100
nA
3.6
Volts
Gate Threshold Voltage (VDS = VGS, ID = 2.96mA)
2.5
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
"COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG."
Microsemi Website - http://www.microsemi.com
μA
050-7210 Rev A 8-2010
Symbol
DYNAMIC CHARACTERISTICS
APT77N60B_SC6
Symbol Characteristic
Test Conditions
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller ") Charge
td(on)
Turn-on Delay Time
tr
4400
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
5
pF
260
38
nC
144
18
INDUCTIVE SWITCHING
VGS = 10V
VDD = 380V
ID = 77A @ 25°C
RG = 5.0Ω
5
UNIT
290
VGS = 10V
VDD = 400V
ID = 77A @ 25°C
Fall Time
MAX
13600
4
Turn-off Delay Time
tf
TYP
VGS = 0V
VDS = 25V
f = 1 MHz
Rise Time
td(off)
MIN
27
110
165
8
12
ns
1670
INDUCTIVE SWITCHING @ 25°C
VDD = 400V, VGS = 15V
ID = 77A, RG = 5Ω
2880
μJ
2300
INDUCTIVE SWITCHING @ 125°C
VDD = 400V, VGS = 15V
ID = 77A, RG = 5Ω
3100
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
Characteristic / Test Conditions
MIN
TYP
MAX
IS
Continuous Source Current (Body Diode)
77
ISM
Pulsed Source Current
231
VSD
Diode Forward Voltage
1
(Body Diode)
3
(VGS = 0V, IS = -77A)
1
UNIT
Amps
1.2
Volts
15
V/ns
/dt
Peak Diode Recovery /dt
t rr
Reverse Recovery Time
(IS = -77A, di/dt = 100A/μs)
Tj = 25°C
950
ns
Q rr
Reverse Recovery Charge
(IS = -77A, di/dt = 100A/μs)
Tj = 25°C
32
μC
IRRM
Peak Recovery Current
(IS = -77A, di/dt = 100A/μs)
Tj = 25°C
60
Amps
dv
dv
6
THERMAL CHARACTERISTICS
Symbol
Characteristic
RθJC
Junction to Case
RθJA
Junction to Ambient
MIN
TYP
MAX
UNIT
0.26
°C/W
40
1 Repetitive Rating: Pulse width limited by maximum junction temperature
4 See MIL-STD-750 Method 3471
2 Repetitive avalanche causes additional power losses that can be calculated as 5 Eon includes diode reverse recovery.
PAV = EAR*f . Pulse width tp limited by Tj max.
6 Maximum 125°C diode commutation speed = di/dt 600A/μs
3 Pulse Test: Pulse width < 380 μs, Duty Cycle < 2%
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
0.25
D = 0.9
0.20
0.7
0.15
0.5
Note:
0.3
PDM
ZθJC, THERMAL IMPEDANCE (°C/W)
050-7210 Rev A 8-2010
0.30
0.10
t1
t2
0.05
t
SINGLE PULSE
0.05
0
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
0.1
10
-5
10
-4
10-3
10-2
0.1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1
Typical Performance Curves
APT77N60B_SC6
25
250
00
7.5V
150
7.0V
6.5V
100
6.0V
5.5V
50
75
50
25
5V
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 2, Low Voltage Output Characteristics
1.80
GS
= 10V @ 38.5A
1.40
VGS = 10V
1.20
VGS = 20V
1.00
2
4
6
8
VGS, GATE-TO-SOURCE VOLTAGE (V)
FIGURE 3, Transfer Characteristics
70
1.60
ID, DRAIN CURRENT (A)
V
0
TJ= -55°C
80
NORMALIZED TO
60
50
40
30
20
10
0.80
0
0
40
80
120
160
200
ID, DRAIN CURRENT (A)
FIGURE 4, RDS(ON) vs Drain Current
50
75
100
125
150
TC, CASE TEMPERATURE (C°)
FIGURE 5, Maximum Drain Current vs Case Temperature
3.00
1.20
1.15
1.10
1.05
1.00
0.95
0.90
25
2.50
2.00
1.50
1.00
0.50
0
-50
0
50
100
150
TJ, Junction Temperature (°C)
FIGURE 6, Breakdown Voltage vs Temperature
1.20
-50
0
50
100
150
TJ, JUNCTION TEMPERATURE (C°)
FIGURE 7, On-Resistance vs Temperature
800
1.10
100
ID, DRAIN CURRENT (A)
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
0
RDS(ON), DRAIN-TO-SOURCE ON
RESISTANCE (NORMALIZED)
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
RDS(on), DRAIN-TO-SOURCE ON RESISTANCE
0
TJ= 25°C
TJ= 125°C
1.00
0.90
0.80
0.70
0.60
- 50
0
50
100
150
TC, Case Temperature (°C)
FIGURE 8, Threshold Voltage vs Temperature
10
10ms
100µs
1ms
100ms
1
0.1
1
10
100
800
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 9, Maximum Safe Operating Area
050-7210 Rev A 8-2010
IC, DRAIN CURRENT (A)
10V
ID, DRAIN CURRENT (A)
15V
200
VDS> ID (ON) x RDS (ON)MAX.
250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
APT77N60B_SC6
Typical Performance Curves
12,000
10,000
C, CAPACITANCE (pF)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
14
Ciss
Coss
1000
100
Crss
10
0
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 10, Capacitance vs Drain-To-Source Voltage
VDS= 120V
10
VDS= 300V
8
VDS= 480V
6
4
2
0
0
50 100 150 200 250 300
350
Qg, TOTAL GATE CHARGE (nC)
FIGURE 11, Gate Charges vs Gate-To-Source Voltage
350
td(off)
100
TJ= +150°C
td(on) and td(off) (ns)
IDR, REVERSE DRAIN CURRENT (A)
D
12
400
350
TJ = =25°C
10
300
250
V
DD
R
200
G
= 400V
= 5.0 Ω
T = 125°C
J
L = 100μH
150
100
50
1
0
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (V)
FIGURE 12, Source-Drain Diode Forward Voltage
0.3
00
V
DD
G
0
25
50
75
100
ID (A)
FIGURE 13, Delay Times vs Current
V
DD
= 5.0Ω
R
tr
T = 125°C
J
L = 100μH
50
td(on)
125
6000
= 400V
00
SWITCHING ENERGY (μJ)
R
tr, and tf (ns)
I = 77A
tf
50
5000
G
= 400V
= 5.0 Ω
T = 125°C
Eon
J
L = 100μH
Eoff
EON includes
4000
diode reverse recovery.
3000
2000
1000
0
0
7000
25
75
100
125
ID (A)
FIGURE 14 , Rise and Fall Times vs Current
V
DD
SWITCHING ENERGY (uJ)
= 400V
I = 77A
D
6000
050-7210 Rev A 8-2010
50
Eoff
T = 125°C
J
L = 100μH
5000
EON includes
diode reverse recovery.
Eon
4000
3000
2000
1000
0
0
10
20
30
40
50
RG, GATE RESISTANCE (Ohms)
FIGURE 16, Switching Energy vs Gate Resistance
0
10
30
50
70
90
110
130
ID (A)
FIGURE 15, Switching Energy vs Current
APT77N60B_SC6
Gate Voltage
10%
90%
Gate Voltage
TJ = 125°C
td(on)
td(off)
tr
90%
tf
Collector Current
5%
TJ = 125°C
10%
Collector Current
10%
5%
0
Collector Voltage
Collector Voltage
Switching Energy
Switching Energy
Figure 17, Turn-on Switching Waveforms and Definitions
Figure 18, Turn-off Switching Waveforms and Definitions
APT30DQ60
APT30DF60
IC
V DD
V CE
G
D.U.T.
Figure
19,20,
Inductive
Switching
Test
Circuit
Figure
Inductive
Switching
Test
Circuit
3
D PAK Package Outline
TO-247 Package Outline
e1 SAC: Tin, Silver, Copper
15.49 (.610)
16.26 (.640)
Drain
6.15 (.242) BSC
5.38 (.212)
6.20 (.244)
Drain
(Heat Sink)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
e3 100% Sn
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05(.632)
Revised
4/18/95
20.80 (.819)
21.46 (.845)
1.04 (.041)
1.15(.045)
13.79 (.543)
13.99(.551)
13.41 (.528)
13.51(.532)
Revised
8/29/97
11.51 (.453)
11.61 (.457)
3.50 (.138)
3.81 (.150)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
2.21 (.087)
2.59 (.102)
2.87 (.113)
3.12 (.123)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Gate
Drain
Source
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
1.27 (.050)
1.40 (.055)
1.22 (.048)
1.32 (.052)
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs.}
3.81 (.150)
4.06 (.160)
(Base of Lead)
Heat Sink (Drain)
and Leads
are Plated
Source
Drain
Gate
Dimensions in Millimeters (Inches)
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7210 Rev A 8-2010
0.46 (.018)
0.56 (.022) {3 Plcs}