STM8360T Green Product S a mHop Microelectronics C orp. Ver 1.0 Dual Enhancement Mode Field Effect Transistor (N and P Channel) PRODUCT SUMMARY (N-Channel) V DSS ID 40V 6.6A PRODUCT SUMMARY (P-Channel) R DS(ON) (m Ω) Max V DSS ID -40V -5.5A R DS(ON) (m Ω) Max 29 @ VGS=10V 42 @ VGS=-10V 45 @ VGS=4.5V 65 @ VGS=-4.5V S O-8 1 D2 5 4 G2 D2 6 3 S2 D1 7 2 G1 D1 8 1 S1 ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS Parameter Drain-Source Voltage Gate-Source Voltage ID Drain Current-Continuous IDM -Pulsed TC=25°C TC=70°C a b d EAS Sigle Pulse Avalanche Energy PD Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range a TC=25°C TC=70°C THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a Details are subject to change without notice. N-Channel P-Channel -40 40 ±20 ±20 -5.5 6.6 Units V V A 5.3 -4.4 A 33 -31 A 16 19 mJ 2 W 1.28 W -55 to 150 °C 62.5 °C/W Nov,21,2008 1 www.samhop.com.tw STM8360T Ver 1.0 N-Channel ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted ) 4 Symbol Parameter Conditions OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance VGS=0V , ID=250uA Min Typ Max 40 1 ±100 VDS=32V , VGS=0V VGS= ±20V , VDS=0V 1.0 3 Units V uA nA 1.5 23 29 V m ohm VGS=4.5V , ID=5.3A 33 45 m ohm VDS=5V , ID=6.6A 17 S VDS=20V,VGS=0V f=1.0MHz 780 60 50 pF pF pF VDD=20V ID=1A VGS=10V RGEN=3.3 ohm 14 14 18.5 ns ns VDS=20V,ID=6.6A,VGS=10V 14 6.9 1.8 3.9 VDS=VGS , ID=250uA VGS=10V , ID=6.6A c DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Qgd Gate-Source Charge Gate-Drain Charge c VDS=20V,ID=6.6A,VGS=4.5V VDS=20V,ID=6.6A, VGS=10V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current IS VSD VGS=0V,IS=1.7A Diode Forward Voltage b ns ns 20 0.77 nC nC nC nC 1.7 1.2 A V Nov,21,2008 2 www.samhop.com.tw STM8360T Ver 1.0 P-Channel ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted ) Symbol Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance Conditions Min VGS=0V , ID=-250uA -40 Typ -1 ±100 VDS=-32V , VGS=0V VGS= ±20V , VDS=0V VDS=VGS , ID=-250uA VGS=-10V , ID=-5.5A VGS=-4.5V , ID=-4.4A VDS=-5V , ID=-5.5A Max -1.0 Units V uA nA -1.7 -3 33 42 V m ohm 48 12 65 m ohm S c DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Qgd Gate-Source Charge 980 135 90 pF pF pF VDD=-20V ID=-1A VGS=-10V RGEN=3 ohm 12 17 82 35 ns ns ns ns VDS=-20V,ID=-5.5A,VGS=-10V 20.7 nC VDS=-20V,ID=-5.5A,VGS=-4.5V 11 1.5 6.2 nC nC VDS=-20V,VGS=0V f=1.0MHz c VDS=-20V,ID=-5.5A, VGS=-10V Gate-Drain Charge DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current IS VSD Diode Forward Voltage b VGS=0V,IS=-1.7A -0.76 nC -1.7 -1.2 A V Notes _ 10sec. a.Surface Mounted on FR4 Board,t < _ 2%. _ 300us, Duty Cycle < b.Pulse Test:Pulse Width < c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=0.5mH,VDD = 20V,VGS=10V.(See Figure13) Nov,21,2008 3 www.samhop.com.tw STM8360T Ver 1.0 N-Channel 40 20 V G S =10V I D, Drain Current(A) I D, Drain Current(A) V G S =4V V G S =4.5V 32 V G S =3.5V 24 16 V G S =3V 8 V G S =2.5V 16 -55 C 8 0 0.5 1 2 1.5 2.5 25 C 4 0 0 T j =125 C 12 3 0 V DS, Drain-to-Source Voltage(V) 60 1.8 R DS(on), On-Resistance Normalized RDS(on)(m Ω) 2.0 48 V G S =4.5V 36 24 V G S =10V 12 8 16 24 32 3.2 4.0 4.8 V G S =4.5V I D =5.3A 1.6 1.4 1.2 V G S =10V I D =6.6A 1.0 0.8 40 0 50 25 75 100 125 150 T j ( °C ) ID, Drain Current(A) Tj, Junction Temperature(° C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-Resistance Variation with Drain Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage 1.2 Vth, Normalized Gate-Source Threshold Voltage 2.4 Figure 2. Transfer Characteristics 72 1 1.6 VGS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics 0 0.8 V DS =V G S I D =250uA 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature( ° C ) 1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Nov,21,2008 4 www.samhop.com.tw STM8360T Ver 1.0 20.0 84 Is, Source-drain current(A) I D =6.6A R DS(on)(m Ω) 70 56 125 C 42 28 75 C 25 C 14 0 0 2 4 6 8 10.0 5.0 25 C 1.0 10 0 V GS, Gate-to-Source Voltage(V) 0.8 2.0 1.6 1.2 Figure 8. Body Diode Forward Voltage Variation with Source Current 1200 V GS, Gate to Source Voltage(V) 10 1000 C, Capacitance(pF) 0.4 VSD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage C is s 800 600 400 C os s 200 C rs s 0 0 5 10 20 15 V DS =20V I D =6.6A 8 6 4 2 0 30 25 0 2 6 4 8 10 12 14 16 V DS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 100 300 I D, Drain Current(A) 100 Switching Time(ns) 75 C 125 C TD(off) Tf Tr TD(on) 10 V DS =20V ,ID=1A 1 10 6 10 60 100 L im it 10 10 1m 1 0.1 0.1 Rg, Gate Resistance(Ω) N) 10 V G S =10V 1 R (O DS 0u us s s ms DC VGS=10V Single Pulse TA=25 C 1 10 40 VDS, Drain-Source Voltage(V) Figure 12. Maximum Safe Operating Area Figure 11. switching characteristics Nov,21,2008 5 www.samhop.com.tw STM8360T Ver 1.0 V ( BR )D S S 15V tp L VDS D R IVE R D .U .T RG + - VD D IA S A 20V tp 0.0 1 IAS Unclamped Inductive Test Circuit Unclamped Inductive Waveforms F igure 13a. F igure 13b. Normalized Transient Thermal Resistance 10 1 0.5 0.2 0.1 0.1 P DM 0.05 t1 t2 0.02 0.01 0.00001 1. 2. 3. 4. Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 10 R įJ A (t)=r (t) * R įJ A R įJ A =S ee Datas heet T J M-T A = P DM* R įJ A (t) Duty C ycle, D=t1/t2 100 1000 Nov,21,2008 6 www.samhop.com.tw STM8360T Ver 1.0 P-Channel 25 20 25 C V G S =-4V 20 V G S =-4.5V -I D, Drain Current(A) -I D, Drain Current(A) -55 C V G S =-8V 15 V G S =-10V V G S =-3V 10 5 0 16 12 8 T j=125 C 4 0 0 0.5 1 2 1.5 2.5 3 0 -V DS, Drain-to-Source Voltage(V) 100 1.8 R DS(on), On-Resistance Normalized RDS(on)(m Ω) 2.0 80 V G S =-4.5V 40 V G S =-10V 20 1 5 10 15 20 1.2 V G S =-4.5V I D =-4.4A 1.0 0 BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage 1.1 1.0 0.9 0.8 0.7 0.6 50 75 50 25 75 100 125 150 T j ( °C ) Figure 4. On-Resistance Variation with Drain Current and Temperature V DS =V G S I D =-250uA 25 4.8 Tj, Junction Temperature(° C ) 1.3 0 4.0 1.4 0.8 25 Figure 3. On-Resistance vs. Drain Current and Gate Voltage -50 -25 3.2 V G S =-10V I D =-5.5A 1.6 -ID, Drain Current(A) 1.2 2.4 Figure 2. Transfer Characteristics 120 0 1.6 -VGS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics 60 0.8 100 125 150 Tj, Junction Temperature( ° C ) 1.15 I D =-250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Nov,21,2008 7 www.samhop.com.tw STM8360T Ver 1.0 20.0 120 -Is, Source-drain current(A) ID=-5.5A R DS(on)(m Ω) 100 80 125 C 60 75 C 40 25 C 20 0 0 2 4 6 8 25 C 10.0 5.0 1.0 10 0.4 -VGS, Gate-to-Source Voltage(V) 1.0 1.2 1.4 -VGS, Gate to Source Voltage(V) 10 Ciss 1000 C, Capacitance(pF) 0.8 Figure 8. Body Diode Forward Voltage Variation with Source Current 1200 800 600 400 Coss 200 Crss 0 5 10 20 15 25 30 VDS=-20V ID=-5.5A 8 6 4 2 0 0 3 9 6 12 15 18 21 24 -V DS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 100 100 -I D, Drain Current(A) 1000 Switching Time(ns) 0.6 -V SD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage 0 75 C 125 C TD(off ) Tf Tr TD(on) 10 VDS=-20V,ID=-1A VGS=-10V 1 1 3 10 100 10 R (O DS N) L im it 10 10 10 1 0u us s 1m s ms DC 0.1 0.1 VGS=-10V Single Pulse TA=25 C 1 10 40 Rg, Gate Resistance(Ω) -V DS, Drain-Source Voltage(V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area Nov,21,2008 8 www.samhop.com.tw STM8360T Ver 1.0 V ( BR )D S S 15V tp D R IVE R L VDS D .U .T RG + - VD D IA S A 20V tp 0.0 1 IAS Unclamped Inductive Test Circuit Unclamped Inductive Waveforms F igure 13a. F igure 13b. Normalized Transient Thermal Resistance 10 0.5 1 0.2 0.1 P DM 0.05 0.1 t1 t2 0.02 1. RthJA (t)=r (t) * R th JA 2. R thJA=See Datasheet 3. TJM-TA = PDM* R thJA (t) 4. Duty Cycle, D=t1/t2 0.01 Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 10 100 1000 Nov,21,2008 9 www.samhop.com.tw STM8360T Ver 1.0 PACKAGE OUTLINE DIMENSIONS SO-8 1 L E D A C 0.015X45± B A1 e 0.008 TYP. 0.016 TYP. 0.05 TYP. H MILLIME T E R S INC HE S S Y MB OLS MIN A A1 D E H L 1.35 0.10 4.80 3.81 5.79 0.41 0± MAX 1.75 0.25 4.98 3.99 6.20 1.27 8± MIN 0.053 0.004 0.189 0.150 0.228 0.016 0± MAX 0.069 0.010 0.196 0.157 0.244 0.050 8± NotesřSO-8 package weightř0.083g Nov,21,2008 10 www.samhop.com.tw STM8360T Ver 1.0 SO-8 Tape and Reel Data SO-8 Carrier Tape P1 D1 P2 B0 E E2 E1 A A0 A P0 D0 TERMINAL NUMBER 1 T SECTION A-A K0 FEEDING DIRECTION unit:р PACKAGE A0 SOP 8N 150п 6.50 ²0.15 B0 K0 D0 D1 E 5.25 ²0.10 2.10 ²0.10 ӿ1.5 (MIN) ӿ1.55 ²0.10 12.0 +0.3 - 0.1 E1 1.75 ²0.10 E2 P0 P1 P2 T 5.5 ²0.10 8.0 ²0.10 4.0 ²0.10 2.0 ²0.10 0.30 ²0.013 SO-8 Reel W1 S K V M N G R H W UNIT:р TAPE SIZE 12 р REEL SIZE M N W W1 H ӿ330 330 ² 1 62 ²1.5 12.4 + 0.2 16.8 - 0.4 ӿ12.75 + 0.15 K S G R V 2.0 ²0.15 Nov,21,2008 11 www.samhop.com.tw