SAMHOP STT6603

STT6603
S a mHop Microelectronics C orp.
Ver 1.0
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for low R DS(ON).
PRODUCT SUMMARY
V DSS
ID
-60V
-2.5A
R DS(ON) (m Ω) Max
Rugged and reliable.
180 @ VGS=-10V
SOT-223 package.
240 @ VGS=-4.5V
D
G
G
S
SO T - 223
S
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted )
Symbol
VDS
VGS
Parameter
Drain-Source Voltage
ID
Drain Current-Continuous
IDM
Limit
-60
±20
Gate-Source Voltage
-Pulsed
TA=25°C
TA=70°C
a
a
Maximum Power Dissipation
TJ, TSTG
Operating Junction and Storage
Temperature Range
V
V
A
-2.0
A
-20
A
TA=25°C
2.08
W
TA=70°C
1.33
W
-55 to 150
°C
60
°C/W
b
PD
-2.5
Units
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
a
Details are subject to change without notice.
Nov,17,2008
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STT6603
Ver 1.0
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol
Parameter
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
RDS(ON)
Drain-Source On-State Resistance
gFS
Forward Transconductance
Conditions
Min
VGS=0V , ID=-250uA
-60
Typ
-1
±100
VGS= ±20V , VDS=0V
VGS=-4.5V , ID=-2.2A
VDS=-10V , ID=-2.5A
-1.0
Units
V
VDS=-48V , VGS=0V
VDS=VGS , ID=-250uA
VGS=-10V , ID=-2.5A
Max
-2.0
-3
90
180
240
120
6.4
uA
nA
V
m ohm
m ohm
S
c
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
tD(ON)
Turn-On Delay Time
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qgs
Qgd
Gate-Source Charge
Gate-Drain Charge
780
65
40
pF
pF
pF
VDD=-30V
ID=-1A
VGS=-10V
RGEN=6 ohm
12.5
13
59.5
12
ns
ns
ns
ns
VDS=-30V,ID=-2.5A,VGS=-10V
13.5
nC
VDS=-30V,ID=-2.5A,VGS=-4.5V
6.8
nC
VDS=-30V,ID=-2.5A,
VGS=-10V
1.8
nC
nC
VDS=-30V,VGS=0V
f=1.0MHz
c
2.6
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain-Source Diode Forward Current
IS
VSD
Diode Forward Voltage
b
VGS=0V,IS=-2A
-0.8
-2.0
A
-1.2
V
Notes
_ 10sec.
a.Surface Mounted on FR4 Board,t <
_ 2%.
_ 300us, Duty Cycle <
b.Pulse Test:Pulse Width <
c.Guaranteed by design, not subject to production testing.
Nov,17,2008
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STT6603
Ver 1.0
15
10
V G S = -4V
8
-I D, Drain Current(A)
-ID, Drain Current(A)
V G S = -10V
V G S = -3.5V
6
4
V G S = -3V
2
12
9
6
25 C
-55 C
3
125 C
0
0
0
2.0
1.5
1.0
0.5
2.5
0
3.0
-V DS, Drain-to-Source Voltage(V)
200
1.8
R DS(on), On-Resistance
Normalized
R DS(on)(m Ω)
2.0
160
VG S =-4.5V
120
VG S =-10V
40
3.6
4.5
5.2
V G S =-10V
I D =-2.5A
1.6
1.4
V G S =-4.5V
I D = -2.2A
1.2
1.0
2
1
4
6
8
0
10
0
25
50
75
100
125
150
T j ( °C )
-ID, Drain Current(A)
Tj, Junction Temperature(° C )
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Figure 4. On-Resistance Variation with Drain
Current and Temperature
BVDSS, Normalized
Drain-Source Breakdown Voltage
1.6
Vth, Normalized
Gate-Source Threshold Voltage
2.7
Figure 2. Transfer Characteristics
240
1
1.8
-V GS, Gate-to-Source Voltage(V)
Figure 1. Output Characteristics
80
0.9
V DS =V G S
I D =-250uA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50
-25
0
25
50
75 100 125 150
Tj, Junction Temperature( ° C )
1.15
I D =-250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50
-25
0
25
50
75 100 125 150
Tj, Junction Temperature(° C )
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Nov,17,2008
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STT6603
Ver 1.0
300
20
-Is, Source-drain current(A)
I D =-2.5A
R DS(on)(m Ω)
250
200
125 C
150
100
75 C
25 C
50
0
0
2
4
6
8
125 C
1
0
0.3
0.6
0.9
1.2
1.5
-VGS, Gate-to-Source Voltage(V)
-VSD, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
-V GS, Gate to Source Voltage(V)
1000
C is s
800
600
400
Cos s
200
C rs s
0
0
10
5
15
20
25
V DS = -30V
I D =-2.5A
8
6
4
2
0
0
30
2
4
-V DS, Drain-to-Source Voltage(V)
6
8
10
12
14 16
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
100
100
60
TD(off)
Tr
-ID, Drain Current(A)
600
Switching Time(ns)
25 C
75 C
10
1200
C, Capacitance(pF)
10
TD(on)
Tf
10
V DS =-30V,ID=-1A
1
10
RD
6 10
Rg, Gate Resistance(Ω)
im
it
10
10
0m
1s
1m
s
ms
s
DC
0.1
0.01
0.1
60 100 300 600
)L
1
V G S =-10V
1
ON
S(
V G S =-10V
S ingle P ulse
T c=25 C
1
10
100 300
-VDS, Drain-Source Voltage(V)
Figure 12. Maximum Safe Operating Area
Figure 11. switching characteristics
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STT6603
Ver 1.0
V DD
ton
RL
V IN
tf
90%
90%
D
V OUT
V OUT
VG S
R GE N
toff
td(off)
tr
td(on)
10%
INVE R TE D
10%
G
90%
V IN
S
50%
50%
10%
P ULS E WIDTH
Figure 14. Switching Waveforms
Figure 13. Switching Test Circuit
1
Normalized Transient
Thermal Resistance
0.5
0.2
0.1
0.1
0.05
0.02
P DM
0.01
t1
0.01
t2
Single Pulse
0.001
0.0001
0.001
1. RthJA (t)=r (t) * R th JA
2. R thJA=See Datasheet
3. TJM-TA = PDM* R thJA (t)
4. Duty Cycle, D=t1/t2
0.01
0.1
1
Square Wave Pulse Duration(sec)
10
100
1000
Figure 13. Normalized Thermal Transient Impedance Curve
Nov,17,2008
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STT6603
Ver 1.0
D
B
TO-223
C
0.10 M C B
C
C
0.080
A
C1
E
E1
(C)
b1
0.10 M C B
b
SECTION B-B
DETAIL "A"
g
1
3
2
B
B
e
C1
b
0.10 M C B
C
(C)
b3
e1
b2
SECTION C-C
GAUGE PLANE
A2
SEATING PLANE
L
0.25
DETAIL "A"
A
C
A1
COMMON
SYMBOL
A
A1
A2
b
b1
b2
b3
g
c
c1
D
E
E1
e
e1
L
DIMENSIONS MILLIMETER
MIN.
MOM.
MIN.
1.80
0.10
0.02
1.60
1.50
1.70
0.84
0.76
0.66
0.60
0.71
0.79
3.10
2.90
3.00
3.05
2.95
2.84
0.06
0.35
0.23
0.30
0.23
0.28
0.33
6.50
6.70
6.30
6.70
7.30
7.00
3.50
3.30
3.70
2.30 BSC
4.60 BSC
0.81
10 °
0°
DIMENSIONS INCHE
MIN.
MOM.
0.0008
0.0591
0.0260
0.0236
0.1142
0.1118
0.0630
0.0300
0.0280
0.1181
0.1161
0.0090
0.0090
0.2480
0.2638
0.1300
0.0319
0°
0.1181
0.0110
0.2560
0.2760
0.1378
0.0906 BSC
0.1811 BSC
MAX.
0.0709
0.0039
0.0669
0.0330
0.0311
0.1220
0.1200
0.0020
0.1378
0.0130
0.2638
0.2874
0.1457
10 °
Nov,17,2008
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STT6603
Ver 1.0
SOT-223 Tape and Reel Data
STO-223 Carrier Tape
D1
P0
P2
P1
E1
E2
E
D0
T
K0
B0
A0
unit:р
PACKAGE
A0
B0
K0
7.42
²0.1
6.83
²0.1
1.88
²0.1
D0
1.50
+ 0.25
D1
1.60
+ 0.1
E
12.0
+ 0.3
- 0.1
E1
E2
P0
P1
P2
T
1.75
²0.1
5.50
²0.5
8.0
²0.1
4.00
²0.1
2.00
²0.05
0.292
²0.02
STO-223 Reel
UNIT:р
REEL SIZE
ӿ330
² 0.5
M
N
ӿ97.0
² 1.0
W
W1
H
2.2
13.0
+ 1.5
ӿ13.0
+ 0.5
- 0.2
K
S
10.6
2.0
²0.5
G
R
V
Nov,17,2008
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