STT6603 S a mHop Microelectronics C orp. Ver 1.0 P-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS(ON). PRODUCT SUMMARY V DSS ID -60V -2.5A R DS(ON) (m Ω) Max Rugged and reliable. 180 @ VGS=-10V SOT-223 package. 240 @ VGS=-4.5V D G G S SO T - 223 S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS Parameter Drain-Source Voltage ID Drain Current-Continuous IDM Limit -60 ±20 Gate-Source Voltage -Pulsed TA=25°C TA=70°C a a Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range V V A -2.0 A -20 A TA=25°C 2.08 W TA=70°C 1.33 W -55 to 150 °C 60 °C/W b PD -2.5 Units THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a Details are subject to change without notice. Nov,17,2008 1 www.samhop.com.tw STT6603 Ver 1.0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance Conditions Min VGS=0V , ID=-250uA -60 Typ -1 ±100 VGS= ±20V , VDS=0V VGS=-4.5V , ID=-2.2A VDS=-10V , ID=-2.5A -1.0 Units V VDS=-48V , VGS=0V VDS=VGS , ID=-250uA VGS=-10V , ID=-2.5A Max -2.0 -3 90 180 240 120 6.4 uA nA V m ohm m ohm S c DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Qgd Gate-Source Charge Gate-Drain Charge 780 65 40 pF pF pF VDD=-30V ID=-1A VGS=-10V RGEN=6 ohm 12.5 13 59.5 12 ns ns ns ns VDS=-30V,ID=-2.5A,VGS=-10V 13.5 nC VDS=-30V,ID=-2.5A,VGS=-4.5V 6.8 nC VDS=-30V,ID=-2.5A, VGS=-10V 1.8 nC nC VDS=-30V,VGS=0V f=1.0MHz c 2.6 DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current IS VSD Diode Forward Voltage b VGS=0V,IS=-2A -0.8 -2.0 A -1.2 V Notes _ 10sec. a.Surface Mounted on FR4 Board,t < _ 2%. _ 300us, Duty Cycle < b.Pulse Test:Pulse Width < c.Guaranteed by design, not subject to production testing. Nov,17,2008 2 www.samhop.com.tw STT6603 Ver 1.0 15 10 V G S = -4V 8 -I D, Drain Current(A) -ID, Drain Current(A) V G S = -10V V G S = -3.5V 6 4 V G S = -3V 2 12 9 6 25 C -55 C 3 125 C 0 0 0 2.0 1.5 1.0 0.5 2.5 0 3.0 -V DS, Drain-to-Source Voltage(V) 200 1.8 R DS(on), On-Resistance Normalized R DS(on)(m Ω) 2.0 160 VG S =-4.5V 120 VG S =-10V 40 3.6 4.5 5.2 V G S =-10V I D =-2.5A 1.6 1.4 V G S =-4.5V I D = -2.2A 1.2 1.0 2 1 4 6 8 0 10 0 25 50 75 100 125 150 T j ( °C ) -ID, Drain Current(A) Tj, Junction Temperature(° C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-Resistance Variation with Drain Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage 1.6 Vth, Normalized Gate-Source Threshold Voltage 2.7 Figure 2. Transfer Characteristics 240 1 1.8 -V GS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics 80 0.9 V DS =V G S I D =-250uA 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature( ° C ) 1.15 I D =-250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Nov,17,2008 3 www.samhop.com.tw STT6603 Ver 1.0 300 20 -Is, Source-drain current(A) I D =-2.5A R DS(on)(m Ω) 250 200 125 C 150 100 75 C 25 C 50 0 0 2 4 6 8 125 C 1 0 0.3 0.6 0.9 1.2 1.5 -VGS, Gate-to-Source Voltage(V) -VSD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage Figure 8. Body Diode Forward Voltage Variation with Source Current 10 -V GS, Gate to Source Voltage(V) 1000 C is s 800 600 400 Cos s 200 C rs s 0 0 10 5 15 20 25 V DS = -30V I D =-2.5A 8 6 4 2 0 0 30 2 4 -V DS, Drain-to-Source Voltage(V) 6 8 10 12 14 16 Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 100 100 60 TD(off) Tr -ID, Drain Current(A) 600 Switching Time(ns) 25 C 75 C 10 1200 C, Capacitance(pF) 10 TD(on) Tf 10 V DS =-30V,ID=-1A 1 10 RD 6 10 Rg, Gate Resistance(Ω) im it 10 10 0m 1s 1m s ms s DC 0.1 0.01 0.1 60 100 300 600 )L 1 V G S =-10V 1 ON S( V G S =-10V S ingle P ulse T c=25 C 1 10 100 300 -VDS, Drain-Source Voltage(V) Figure 12. Maximum Safe Operating Area Figure 11. switching characteristics Nov,17,2008 4 www.samhop.com.tw STT6603 Ver 1.0 V DD ton RL V IN tf 90% 90% D V OUT V OUT VG S R GE N toff td(off) tr td(on) 10% INVE R TE D 10% G 90% V IN S 50% 50% 10% P ULS E WIDTH Figure 14. Switching Waveforms Figure 13. Switching Test Circuit 1 Normalized Transient Thermal Resistance 0.5 0.2 0.1 0.1 0.05 0.02 P DM 0.01 t1 0.01 t2 Single Pulse 0.001 0.0001 0.001 1. RthJA (t)=r (t) * R th JA 2. R thJA=See Datasheet 3. TJM-TA = PDM* R thJA (t) 4. Duty Cycle, D=t1/t2 0.01 0.1 1 Square Wave Pulse Duration(sec) 10 100 1000 Figure 13. Normalized Thermal Transient Impedance Curve Nov,17,2008 5 www.samhop.com.tw STT6603 Ver 1.0 D B TO-223 C 0.10 M C B C C 0.080 A C1 E E1 (C) b1 0.10 M C B b SECTION B-B DETAIL "A" g 1 3 2 B B e C1 b 0.10 M C B C (C) b3 e1 b2 SECTION C-C GAUGE PLANE A2 SEATING PLANE L 0.25 DETAIL "A" A C A1 COMMON SYMBOL A A1 A2 b b1 b2 b3 g c c1 D E E1 e e1 L DIMENSIONS MILLIMETER MIN. MOM. MIN. 1.80 0.10 0.02 1.60 1.50 1.70 0.84 0.76 0.66 0.60 0.71 0.79 3.10 2.90 3.00 3.05 2.95 2.84 0.06 0.35 0.23 0.30 0.23 0.28 0.33 6.50 6.70 6.30 6.70 7.30 7.00 3.50 3.30 3.70 2.30 BSC 4.60 BSC 0.81 10 ° 0° DIMENSIONS INCHE MIN. MOM. 0.0008 0.0591 0.0260 0.0236 0.1142 0.1118 0.0630 0.0300 0.0280 0.1181 0.1161 0.0090 0.0090 0.2480 0.2638 0.1300 0.0319 0° 0.1181 0.0110 0.2560 0.2760 0.1378 0.0906 BSC 0.1811 BSC MAX. 0.0709 0.0039 0.0669 0.0330 0.0311 0.1220 0.1200 0.0020 0.1378 0.0130 0.2638 0.2874 0.1457 10 ° Nov,17,2008 6 www.samhop.com.tw STT6603 Ver 1.0 SOT-223 Tape and Reel Data STO-223 Carrier Tape D1 P0 P2 P1 E1 E2 E D0 T K0 B0 A0 unit:р PACKAGE A0 B0 K0 7.42 ²0.1 6.83 ²0.1 1.88 ²0.1 D0 1.50 + 0.25 D1 1.60 + 0.1 E 12.0 + 0.3 - 0.1 E1 E2 P0 P1 P2 T 1.75 ²0.1 5.50 ²0.5 8.0 ²0.1 4.00 ²0.1 2.00 ²0.05 0.292 ²0.02 STO-223 Reel UNIT:р REEL SIZE ӿ330 ² 0.5 M N ӿ97.0 ² 1.0 W W1 H 2.2 13.0 + 1.5 ӿ13.0 + 0.5 - 0.2 K S 10.6 2.0 ²0.5 G R V Nov,17,2008 7 www.samhop.com.tw