SAMHOP STS8235

STS8235
S a mHop Microelectronics C orp.
Ver 1.0
Dual N-Channel Enhancement Mode Field Effect Transistor
F E AT UR E S
S uper high dense cell design for low R DS (ON ).
PRODUCT SUMMARY
V DSS
R DS(ON) (m Ω) Max
ID
R ugged and reliable.
S urface Mount P ackage.
36 @ VGS=4.5V
30V
4.5A
E S D P rotected.
46 @ VGS=2.5V
S1
D1/D2
S2
1
2
3
D2
D1
S OT26
Top View
6
G1
5
4
D1/D2
G1
G2
G2
S1
S2
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted )
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID
IDM
Drain Current-Continuous
-Pulsed
a
a
Maximum Power Dissipation
TJ, TSTG
Operating Junction and Storage
Temperature Range
Units
30
V
±10
V
TA=25°C
4.5
A
TA=70°C
3.6
18
A
A
TA=25°C
1.25
A
TA=70°C
0.8
W
-55 to 150
°C
100
°C/W
b
PD
Limit
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
a
Details are subject to change without notice.
Aug,14,2008
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STS8235
Ver 1.0
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
4 Symbol
Parameter
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
RDS(ON)
Drain-Source On-State Resistance
gFS
Forward Transconductance
DYNAMIC CHARACTERISTICS c
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
c
SWITCHING CHARACTERISTICS
tD(ON)
Turn-On Delay Time
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Conditions
Min
VGS=0V , ID=250uA
30
VGS= ±10V , VDS=0V
VDS=VGS , ID=250uA
VGS=4.5V , ID=4.5A
VSD
uA
1
±10
uA
1.5
36
V
m ohm
46
m ohm
VGS=2.5V , ID=4A
VDS=5V , ID=4.5A
15
S
VDS=15V,VGS=0V
f=1.0MHz
440
80
56
pF
pF
pF
10
12.5
ns
ns
ns
ns
VDD=15V
ID=1A
VGS=4.5V
RGEN=10 ohm
0.5
15.5
30
VDS=15V,ID=4.5A,VGS=4.5V
6.7
nC
VDS=15V,ID=4.5A,VGS=2.5V
4.6
1.5
2.2
nC
Maximum Continuous Drain-Source Diode Forward Current
Diode Forward Voltage
Units
0.7
30
36
Gate-Source Charge
VDS=15V,ID=4.5A,
VGS=4.5V
Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
b
Max
V
VDS=24V , VGS=0V
Qgs
Qgd
IS
Typ
VGS=0V,IS=1.25A
0.78
nC
nC
1.25
A
1.2
V
Notes
_ 10sec.
a.Surface Mounted on FR4 Board,t <
_ 2%.
_ 300us, Duty Cycle <
b.Pulse Test:Pulse Width <
c.Guaranteed by design, not subject to production testing.
Aug,14,2008
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STS8235
Ver 1.0
15
20
V G S = 4.5V
V G S = 2.5V
I D, Drain Current(A)
I D, Drain Current(A)
V G S =2 V
16
12
8
V G S = 1.5V
4
12
9
6
125 C
-55 C
3
25 C
0
0
0
2.0
1.5
1.0
0.5
2.5
0
3.0
V DS, Drain-to-Source Voltage(V)
50
1.8
R DS(on), On-Resistance
Normalized
R DS(on)(m Ω)
2.0
VG S =2.5V
30
VG S =4.5V
20
10
4
1
8
12
16
1.6
2.0
2.4
V G S =2.5V
I D =4A
1.6
1.4
V G S =4.5V
I D = 4.5A
1.2
1.0
0
20
0
25
50
75
100
125
150
T j ( °C )
ID, Drain Current(A)
Tj, Junction Temperature(° C )
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Figure 4. On-Resistance Variation with Drain
Current and Temperature
BVDSS, Normalized
Drain-Source Breakdown Voltage
1.6
Vth, Normalized
Gate-Source Threshold Voltage
1.2
Figure 2. Transfer Characteristics
60
1
0.8
VGS, Gate-to-Source Voltage(V)
Figure 1. Output Characteristics
40
0.4
V DS =V G S
I D =250uA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50
-25
0
25
50
75 100 125 150
Tj, Junction Temperature( ° C )
1.15
I D =250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50
-25
0
25
50
75 100 125 150
Tj, Junction Temperature(° C )
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Aug,14,2008
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STS8235
Ver 1.0
90
20.0
Is, Source-drain current(A)
I D =4.5A
R DS(on)(m Ω)
75
60
45
125 C
30
75 C
25 C
15
0
2
4
6
8
125 C
75 C
10
0
0.3
0.6
0.9
1.2
1.5
V GS, Gate-to-Source Voltage(V)
V SD, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
V GS, Gate to Source Voltage(V)
500
C, Capacitance(pF)
5.0
1.0
0
600
C is s
400
300
200
Cos s
C rs s
100
0
0
2
4
6
8
10
V DS = 15V
I D =4.5A
8
6
4
2
0
0
12
1
2
4
3
5
7
6
V DS, Drain-to-Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
600
8
50
10
100
60
I D, Drain Current(A)
Switching Time(ns)
25 C
10.0
Tr
TD(off)
Tf
10
TD(on)
V DS =15V ,ID=1A
1
RD
6 10
Rg, Gate Resistance(Ω)
it
10
1m
0u
s
10 s
1 0 ms
0m
s
DC
0.1
0.1
60 100 300 600
(
L im
1
V G S =4.5 V
1
S
)
ON
V G S =4.5V
S ingle P ulse
T A =25 C
1
10
30
100
VDS, Drain-Source Voltage(V)
Figure 12. Maximum Safe Operating Area
Figure 11. switching characteristics
Aug,14,2008
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STS8235
Ver 1.0
V DD
ton
RL
V IN
tf
90%
90%
D
V OUT
V OUT
VG S
R GE N
toff
td(off)
tr
td(on)
10%
INVE R TE D
10%
G
90%
V IN
S
50%
50%
10%
P ULS E WIDTH
Figure 14. Switching Waveforms
Figure 13. Switching Test Circuit
Normalized Transient
Thermal Resistance
10
1
0.5
0.2
P DM
0.1
0.1
t1
t2
0.05
0.02
0.01
0.01
0.00001
1.
2.
3.
4.
Single Pulse
0.0001
0.001
0.01
0.1
1
R thJ A (t)=r (t) * R thJ A
R thJ A =S ee Datas heet
T J M-T A = P DM* R thJ A (t)
Duty C ycle, D=t1/t2
10
100
1000
Square Wave Pulse Duration(sec)
Figure 15. Normalized Thermal Transient Impedance Curve
Aug,14,2008
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STS8235
Ver 1.0
PACKAGE OUTLINE DIMENSIONS
SOT26
Aug,14,2008
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STS8235
Ver 1.0
SOT26 Tape and Reel Data
SOT26 Carrier Tape
SOT26 Reel
Aug,14,2008
7
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