STU/D330S S a mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS(ON). PRODUCT SUMMARY V DSS R DS(ON) (m Ω) Max ID Rugged and reliable. 28 @ VGS=10V 30V Suface Mount Package. 20A 38 @ VGS=4.5V G G D S STU SERIES TO - 252AA( D - PAK ) S STD SERIES TO - 251 ( I - PAK ) ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol Parameter Limit Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous TC=25°C 20 A TC=70°C 16.3 A 80 A 8.8 mJ TC=25°C 21 W TC=70°C 13.3 W -55 to 150 °C IDM -Pulsed a b d EAS Sigle Pulse Avalanche Energy PD Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range a THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case a Thermal Resistance, Junction-to-Ambient a Details are subject to change without notice. 6 °C/W 50 °C/W Sep,03,2008 1 www.samhop.com.tw STU/D330S Ver 1.0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance Conditions Min VGS=0V , ID=250uA 30 Typ Max 1 ±100 VDS=24V , VGS=0V VGS= ±20V , VDS=0V Units V uA nA 1.9 3 22 28 V m ohm VGS=4.5V , ID=17.5A 28 38 m ohm VDS=15V , ID=20A 15 S VDS=15V,VGS=0V f=1.0MHz 478 100 65 pF pF pF VDS=VGS , ID=250uA VGS=10V , ID=20A 1 c DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge c 10.5 ns 10 ns 17 ns 20 ns VDS=15V,ID=20A,VGS=10V 8.1 nC VDS=15V,ID=20A,VGS=4.5V 4 nC 1.3 nC 2.2 nC VDD=15V ID=1A VGS=10V RGEN=6 ohm VDS=15V,ID=20A, VGS=10V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current VSD Diode Forward Voltage b VGS=0V,IS=1.7A 0.79 1.7 1.2 A V Notes _ 10sec. a.Surface Mounted on FR4 Board,t < _ 2%. _ 300us, Duty Cycle < b.Pulse Test:Pulse Width < c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=0.5mH,VDD = 20V.(See Figure13) Sep,03,2008 2 www.samhop.com.tw STU/D330S Ver 1.0 30 15 VGS=5V 24 I D, Drain Current(A) I D, Drain Current(A) VGS=10V VGS=3.5V VGS=4V 18 12 VGS=3V 0 0 0.5 1.5 1.0 2.0 2.5 -55 C 25 C 6 0 3.0 0 0.7 1.4 2.1 2.8 3.5 4.2 V DS, Drain-to-Source Voltage(V) V GS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics Figure 2. Transfer Characteristics 66 2.0 55 1.8 R DS(on), On-Resistance Normalized R DS(on)(m Ω) T j=125 C 9 3 6 44 33 V G S =4.5V 22 V G S =10V 11 1 6 1 12 18 24 V G S =10V I D =20A 1.6 1.4 1.2 V G S =4.5V I D =17.5A 1.0 0 30 0 25 50 75 100 125 150 T j ( °C ) I D, Drain Current(A) Tj, Junction Temperature(° C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-Resistance Variation with Drain Current and Temperature 1.3 BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage 12 V DS =V G S I D =250uA 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) 1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Sep,03,2008 3 www.samhop.com.tw STU/D330S Ver 1.0 90 20.0 Is, Source-drain current(A) I D =20A 75 RDS(on)(m Ω) 60 45 125 C 30 75 C 15 0 0 2 4 25 C 6 8 5.0 25 C 125 C 1.0 10 0 0.3 75 C 0.6 0.9 1.2 1.5 V GS, Gate-to-Source Voltage(V) VSD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage Figure 8. Body Diode Forward Voltage Variation with Source Current V GS, Gate to Source Voltage(V) 900 750 C, Capacitance(pF) 10.0 600 C is s 450 300 C os s 150 C rs s 10 V DS =15V I D =20A 8 6 4 2 0 0 0 5 10 15 20 25 0 30 2 6 4 8 10 12 14 16 V DS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 200 200 100 60 I D, Drain Current(A) Switching Time(ns) 100 Tr Tf 10 1 V DS =15V ,ID=1A 1 10 V G S =10V 1 6 10 0.1 60 100 300 600 R ( DS ) ON L im it 10 1m 10 m DC s 0u s s V G S =10V S ingle P ulse T A =25 C 1 10 30 100 Rg, Gate Resistance(Ω) V DS, Drain-Source Voltage(V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area Sep,03,2008 4 www.samhop.com.tw STU/D330S Ver 1.0 V ( BR )D S S 15V tp D R IVE R L VDS D .U .T RG + - VD D IA S A 20V tp 0.0 1 IAS Unclamped Inductive Test Circuit Unclamped Inductive Waveforms F igure 13a. F igure 13b. 2 1 Normalized Transient Thermal Resistance D=0.5 0.2 0.1 P DM 0.1 0.05 t1 t2 0.02 0.01 1. 2. 3. 4. S ING LE P ULS E 0.01 10 -5 10 -4 10 -3 10 -2 10 R J J A (t)=r (t) * R J J A R J J A =S ee Datas heet T J M-T A = P DM* R J J A (t) Duty C ycle, D=t1/t2 -1 1 10 Square Wave Pulse Duration(sec) Figure 14. Normalized Thermal Transient Impedance Curve Sep,03,2008 5 www.samhop.com.tw STU/D330S Ver 1.0 PACKAGE OUTLINE DIMENSIONS TO-251 Sep,03,2008 6 www.samhop.com.tw STU/D330S Ver 1.0 E TO-252 A b2 C L3 1 D1 D E1 H 1 2 3 DETAIL "A" L4 b1 e b L2 L A1 DETAIL "A" L1 SYMBOLS A A1 b b1 b2 C D D1 E E1 e H L L1 L2 L3 L4 1 MILLIMETERS MIN 2.184 0.000 0.633 0.666 5.207 0.460 5.969 5.415 6.400 4.902 2.286 9.601 1.313 2.666 0.460 0.889 0.508 0° 7° INCHES MAX 2.388 0.127 0.889 1.092 5.461 0.584 6.223 5.515 6.731 5.004 BSC 10.286 1.651 3.174 0.560 1.143 1.016 8° REF. MIN 0.086 0.000 0.025 0.026 0.205 0.018 0.235 0.213 0.252 0.193 0.090 0.378 0.052 0.105 0.018 0.035 0.020 0° 7° MAX 0.094 0.005 0.035 0.043 0.215 0.023 0.245 0.217 0.265 0.197 BSC 0.405 0.065 0.125 0.022 0.045 0.040 8° REF. Sep,03,2008 7 www.samhop.com.tw STU/D330S Ver 1.0 TO-251 Tube/TO-252 Tape and Reel Data TO-251 Tube 0.4 5.25 4.5 1.4 2.25 " A" 1.65 5.5 2~ӿ3.0 7.50 1.25 1.90 540 + 1.5 6.60 19.75 TO-252 Carrier Tape P2 D1 B0 E E2 T E1 P1 K0 FEED DIRECTION A0 D0 P0 UNIT:р PACKAGE TO-252 (16 р* A0 B0 K0 6.96 ²0.1 10.49 ²0.1 2.79 ²0.1 D0 D1 E ӿ2 ӿ1.5 + 0.1 - 0 16.0 ²0.3 TO-252 Reel E1 E2 P0 P1 P2 T 1.75 ²0.1 7.5 ²0.15 8.0 ²0.1 4.0 ²0.1 2.0 ²0.15 0.3 ²0.05 T S M N K G V R H W UNIT:р TAPE SIZE 16 р REEL SIZE ӿ 330 M ӿ330 ² 0.5 N W ӿ97 ² 1.0 17.0 + 1.5 - 0 T H 2.2 ӿ13.0 + 0.5 - 0.2 K S 10.6 2.0 ²0.5 G R V Sep,03,2008 8 www.samhop.com.tw