SAMHOP STU330S

STU/D330S
S a mHop Microelectronics C orp.
Ver 1.0
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for low R DS(ON).
PRODUCT SUMMARY
V DSS
R DS(ON) (m Ω) Max
ID
Rugged and reliable.
28 @ VGS=10V
30V
Suface Mount Package.
20A
38 @ VGS=4.5V
G
G
D
S
STU SERIES
TO - 252AA( D - PAK )
S
STD SERIES
TO - 251 ( I - PAK )
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted )
Symbol
Parameter
Limit
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-Continuous
TC=25°C
20
A
TC=70°C
16.3
A
80
A
8.8
mJ
TC=25°C
21
W
TC=70°C
13.3
W
-55 to 150
°C
IDM
-Pulsed
a
b
d
EAS
Sigle Pulse Avalanche Energy
PD
Maximum Power Dissipation
TJ, TSTG
Operating Junction and Storage
Temperature Range
a
THERMAL CHARACTERISTICS
R JC
R JA
Thermal Resistance, Junction-to-Case a
Thermal Resistance, Junction-to-Ambient
a
Details are subject to change without notice.
6
°C/W
50
°C/W
Sep,03,2008
1
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STU/D330S
Ver 1.0
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol
Parameter
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
RDS(ON)
Drain-Source On-State Resistance
gFS
Forward Transconductance
Conditions
Min
VGS=0V , ID=250uA
30
Typ
Max
1
±100
VDS=24V , VGS=0V
VGS= ±20V , VDS=0V
Units
V
uA
nA
1.9
3
22
28
V
m ohm
VGS=4.5V , ID=17.5A
28
38
m ohm
VDS=15V , ID=20A
15
S
VDS=15V,VGS=0V
f=1.0MHz
478
100
65
pF
pF
pF
VDS=VGS , ID=250uA
VGS=10V , ID=20A
1
c
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
c
10.5
ns
10
ns
17
ns
20
ns
VDS=15V,ID=20A,VGS=10V
8.1
nC
VDS=15V,ID=20A,VGS=4.5V
4
nC
1.3
nC
2.2
nC
VDD=15V
ID=1A
VGS=10V
RGEN=6 ohm
VDS=15V,ID=20A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Maximum Continuous Drain-Source Diode Forward Current
VSD
Diode Forward Voltage b
VGS=0V,IS=1.7A
0.79
1.7
1.2
A
V
Notes
_ 10sec.
a.Surface Mounted on FR4 Board,t <
_ 2%.
_ 300us, Duty Cycle <
b.Pulse Test:Pulse Width <
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=0.5mH,VDD = 20V.(See Figure13)
Sep,03,2008
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STU/D330S
Ver 1.0
30
15
VGS=5V
24
I D, Drain Current(A)
I D, Drain Current(A)
VGS=10V
VGS=3.5V
VGS=4V
18
12
VGS=3V
0
0
0.5
1.5
1.0
2.0
2.5
-55 C
25 C
6
0
3.0
0
0.7
1.4
2.1
2.8
3.5
4.2
V DS, Drain-to-Source Voltage(V)
V GS, Gate-to-Source Voltage(V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
66
2.0
55
1.8
R DS(on), On-Resistance
Normalized
R DS(on)(m Ω)
T j=125 C
9
3
6
44
33
V G S =4.5V
22
V G S =10V
11
1
6
1
12
18
24
V G S =10V
I D =20A
1.6
1.4
1.2
V G S =4.5V
I D =17.5A
1.0
0
30
0
25
50
75
100
125
150
T j ( °C )
I D, Drain Current(A)
Tj, Junction Temperature(° C )
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.3
BVDSS, Normalized
Drain-Source Breakdown Voltage
Vth, Normalized
Gate-Source Threshold Voltage
12
V DS =V G S
I D =250uA
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25
0
25
50
75
100 125 150
Tj, Junction Temperature(° C )
1.15
I D =250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50
-25
0
25
50
75
100 125 150
Tj, Junction Temperature(° C )
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Sep,03,2008
3
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STU/D330S
Ver 1.0
90
20.0
Is, Source-drain current(A)
I D =20A
75
RDS(on)(m Ω)
60
45
125 C
30
75 C
15
0
0
2
4
25 C
6
8
5.0
25 C
125 C
1.0
10
0
0.3
75 C
0.6
0.9
1.2
1.5
V GS, Gate-to-Source Voltage(V)
VSD, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
Figure 8. Body Diode Forward Voltage
Variation with Source Current
V GS, Gate to Source Voltage(V)
900
750
C, Capacitance(pF)
10.0
600
C is s
450
300
C os s
150
C rs s
10
V DS =15V
I D =20A
8
6
4
2
0
0
0
5
10
15
20
25
0
30
2
6
4
8
10
12
14 16
V DS, Drain-to-Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
200
200
100
60
I D, Drain Current(A)
Switching Time(ns)
100
Tr
Tf
10
1
V DS =15V ,ID=1A
1
10
V G S =10V
1
6 10
0.1
60 100 300 600
R
(
DS
)
ON
L im
it
10
1m
10
m
DC s
0u
s
s
V G S =10V
S ingle P ulse
T A =25 C
1
10
30
100
Rg, Gate Resistance(Ω)
V DS, Drain-Source Voltage(V)
Figure 11. switching characteristics
Figure 12. Maximum Safe Operating Area
Sep,03,2008
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STU/D330S
Ver 1.0
V ( BR )D S S
15V
tp
D R IVE R
L
VDS
D .U .T
RG
+
- VD D
IA S
A
20V
tp
0.0 1
IAS
Unclamped Inductive Test Circuit
Unclamped Inductive Waveforms
F igure 13a.
F igure 13b.
2
1
Normalized Transient
Thermal Resistance
D=0.5
0.2
0.1
P DM
0.1
0.05
t1
t2
0.02
0.01
1.
2.
3.
4.
S ING LE P ULS E
0.01
10
-5
10
-4
10
-3
10
-2
10
R J J A (t)=r (t) * R J J A
R J J A =S ee Datas heet
T J M-T A = P DM* R J J A (t)
Duty C ycle, D=t1/t2
-1
1
10
Square Wave Pulse Duration(sec)
Figure 14. Normalized Thermal Transient Impedance Curve
Sep,03,2008
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STU/D330S
Ver 1.0
PACKAGE OUTLINE DIMENSIONS
TO-251
Sep,03,2008
6
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STU/D330S
Ver 1.0
E
TO-252
A
b2
C
L3
1
D1
D
E1
H
1
2
3
DETAIL "A"
L4
b1
e
b
L2
L
A1
DETAIL "A"
L1
SYMBOLS
A
A1
b
b1
b2
C
D
D1
E
E1
e
H
L
L1
L2
L3
L4
1
MILLIMETERS
MIN
2.184
0.000
0.633
0.666
5.207
0.460
5.969
5.415
6.400
4.902
2.286
9.601
1.313
2.666
0.460
0.889
0.508
0°
7°
INCHES
MAX
2.388
0.127
0.889
1.092
5.461
0.584
6.223
5.515
6.731
5.004
BSC
10.286
1.651
3.174
0.560
1.143
1.016
8°
REF.
MIN
0.086
0.000
0.025
0.026
0.205
0.018
0.235
0.213
0.252
0.193
0.090
0.378
0.052
0.105
0.018
0.035
0.020
0°
7°
MAX
0.094
0.005
0.035
0.043
0.215
0.023
0.245
0.217
0.265
0.197
BSC
0.405
0.065
0.125
0.022
0.045
0.040
8°
REF.
Sep,03,2008
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STU/D330S
Ver 1.0
TO-251 Tube/TO-252 Tape and Reel Data
TO-251 Tube
0.4
5.25
4.5
1.4
2.25
" A"
1.65
5.5
2~ӿ3.0
7.50
1.25
1.90
540 + 1.5
6.60
19.75
TO-252 Carrier Tape
P2
D1
B0
E
E2
T
E1
P1
K0
FEED DIRECTION
A0
D0
P0
UNIT:р
PACKAGE
TO-252
(16 р*
A0
B0
K0
6.96
²0.1
10.49
²0.1
2.79
²0.1
D0
D1
E
ӿ2
ӿ1.5
+ 0.1
- 0
16.0
²0.3
TO-252 Reel
E1
E2
P0
P1
P2
T
1.75
²0.1
7.5
²0.15
8.0
²0.1
4.0
²0.1
2.0
²0.15
0.3
²0.05
T
S
M
N
K
G
V
R
H
W
UNIT:р
TAPE SIZE
16 р
REEL SIZE
ӿ 330
M
ӿ330
² 0.5
N
W
ӿ97
² 1.0
17.0
+ 1.5
- 0
T
H
2.2
ӿ13.0
+ 0.5
- 0.2
K
S
10.6
2.0
²0.5
G
R
V
Sep,03,2008
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