SavantIC Semiconductor Product Specification 2N5867 2N5868 Silicon PNP Power Transistors DESCRIPTION ·With TO-3 package ·Low collector saturation voltage APPLICATIONS ·For medium-speed switching and amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS 2N5867 VCBO Collector-base voltage -60 Open base 2N5868 VEBO V -80 2N5867 Collector-emitter voltage Emitter-base voltage UNIT -60 Open emitter 2N5868 VCEO VALUE V -80 Open collector -5 V -5 A 87.5 W IC Collector current PD Total Power Dissipation Tj Junction temperature 150 Tstg Storage temperature -65~200 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT /W SavantIC Semiconductor Product Specification 2N5867 2N5868 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N5867 VCEO(SUS) Collector-emitter sustaining voltage MIN TYP. MAX UNIT -60 V IC=-0.1A ;IB=0 -80 2N5868 VCEsat Collector-emitter saturation voltage IC=-5A;IB=-1A -1.0 V VBEsat Base-emitter saturation voltage IC=-5A; IB=-1A -1.5 V Collector cut-off current VCB=ratedVCBO; IB=0 -1.0 mA -2.0 mA -1.0 mA ICBO 2N5867 ICEO VCE=-30V; IB=0 Collector cut-off current 2N5868 VCE=-40V; IB=0 IEBO Emitter cut-off current VEB=-5V; IC=0 hFE DC current gain IC=-1.5A ; VCE=-4V 20 Trainsistion frequency IC=-0.5A ; VCE=-10V;f=1MHz 4 fT 2 100 MHz SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2N5867 2N5868 PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3