SavantIC Semiconductor Product Specification 2N6499 Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·High breakdown voltage APPLICATIONS ·Designed for high voltage inverters, switching regulators and line operated amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 450 V VCEO Collector-emitter voltage Open base 350 V VEBO Emitter-base voltage Open collector 6 V IC Collector current (DC) 5 A ICM Collector current-Peak 10 A IB Base current 2 A PD Total power dissipation 80 W Tj Junction temperature 150 Tstg Storage temperature -65~150 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case VALUE 1.56 UNIT /W SavantIC Semiconductor Product Specification 2N6499 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=25mA ;IB=0 VCEsat-1 Collector-emitter saturation voltage IC=2.5A; IB=0.5A 1.5 V VCEsat-2 Collector-emitter saturation voltage IC=5A ;IB=2A 5.0 V VBEsat-1 Base-emitter saturation voltage IC=2.5A; IB=0.5A 1.5 V VBEsat-2 Base-emitter saturation voltage IC=5A ;IB=2A 2.5 V ICEX Collector cut-off current VCE=450V;VBE=-1.5V VCE=225V;VBE=-1.5V;TC=100 1.0 10 mA IEBO Emitter cut-off current VEB=6V; IC=0 1.0 mA hFE-1 DC current gain IC=2.5A ; VCE=10V 10 hFE-2 DC current gain IC=5A ; VCE=10V 3 Transition frequency IC=250mA ; VCE=10V;f=1MHz fT CONDITIONS MIN TYP. MAX 350 UNIT V 75 5.0 Switching times tr tstg tf Rise time Storage time IC=2.5A, IB1=-IB2=0.5A VCC=125V Fall time 2 1.0 µs 2.5 µs 1.0 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 2N6499