SavantIC Semiconductor Product Specification BUX41 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Fast switching times APPLICATIONS ·For high speed ,high current and high power applications PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 250 V VCEO Collector-emitter voltage Open base 200 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 15 A ICM Collector current-peak 20 A IB Base current 3 A PT Total power dissipation 120 W Tj Junction temperature 200 Tstg Storage temperature -65~200 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX UNIT 1.46 /W SavantIC Semiconductor Product Specification BUX41 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A; IB=0; L=25mH 200 V V(BR)EBO Emitter-base sustaining voltage IE=50mA; IC=0 7 V VCEsat-1 Collector-emitter saturation voltage IC=5 A;IB=0.5 A 1.2 V VCEsat-2 Collector-emitter saturation voltage IC=8 A;IB=1 A 1.6 V Base-emitter saturation voltage IC=8 A;IB=1 A 2.0 V ICEX Collector cut-off current VCE=250V;VBE=-1.5V TC=125 1.0 5.0 mA ICEO Collector cut-off current VCE=160V;IB=0 1.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 mA hFE-1 DC current gain IC=5A ; VCE=4V 15 hFE-2 DC current gain IC=8A ; VCE=4V 8 Transition frequency IC=1A ; VCE=15V; f=4MHz VBEsat fT TYP. MAX UNIT 45 8.0 MHz Switching times ton Turn-on time ts Storage time tf Fall time IC=8A ;IB1=-IB2=1A VCC=150V,RC=18.75D 2 0.6 µs 1.5 µs 0.4 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 BUX41