SAVANTIC BUX41

SavantIC Semiconductor
Product Specification
BUX41
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·Fast switching times
APPLICATIONS
·For high speed ,high current
and high power applications
PINNING(see fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
250
V
VCEO
Collector-emitter voltage
Open base
200
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
15
A
ICM
Collector current-peak
20
A
IB
Base current
3
A
PT
Total power dissipation
120
W
Tj
Junction temperature
200
Tstg
Storage temperature
-65~200
TC=25
THERMAL CHARACTERISTICS
SYMBOL
Rth j-C
PARAMETER
Thermal resistance junction to case
MAX
UNIT
1.46
/W
SavantIC Semiconductor
Product Specification
BUX41
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.2A; IB=0; L=25mH
200
V
V(BR)EBO
Emitter-base sustaining voltage
IE=50mA; IC=0
7
V
VCEsat-1
Collector-emitter saturation voltage
IC=5 A;IB=0.5 A
1.2
V
VCEsat-2
Collector-emitter saturation voltage
IC=8 A;IB=1 A
1.6
V
Base-emitter saturation voltage
IC=8 A;IB=1 A
2.0
V
ICEX
Collector cut-off current
VCE=250V;VBE=-1.5V
TC=125
1.0
5.0
mA
ICEO
Collector cut-off current
VCE=160V;IB=0
1.0
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
1.0
mA
hFE-1
DC current gain
IC=5A ; VCE=4V
15
hFE-2
DC current gain
IC=8A ; VCE=4V
8
Transition frequency
IC=1A ; VCE=15V; f=4MHz
VBEsat
fT
TYP.
MAX
UNIT
45
8.0
MHz
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=8A ;IB1=-IB2=1A
VCC=150V,RC=18.75D
2
0.6
µs
1.5
µs
0.4
µs
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
BUX41