Inchange Semiconductor Product Specification 2N6249 2N6250 2N6251 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High voltage,high speed ・Low collector saturation voltage APPLICATIONS ・High voltage inverters ・Switching regulators ・Line operated amplifier PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS 2N6249 VCBO VCEO Collector-base voltage Collector-emitter voltage Emitter-base voltage UNIT 300 Open emitter 2N6250 375 2N6251 450 2N6249 200 Open base 2N6250 2N6251 VEBO VALUE 275 V V 350 Open collector 6 V IC Collector current 10 A ICM Collector current-peak 30 A IB Base current 10 A PT Total power dissipation 175 W Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ MAX UNIT 1.0 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case Inchange Semiconductor Product Specification 2N6249 2N6250 2N6251 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N6249 VCEO(SUS) Collector-emitter sustaining voltage 2N6250 VBE(sat) ICEV ICEO IEBO Collector-emitter saturation voltage Base-emitter saturation voltage IC=200mA ; IB=0 Collector cut-off current IC=10A;IB=1.0A 2N6250 IC=10A;IB=1.25 A 2N6251 IC=10A;IB=1.67 A 2N6249 IC=10A;IB=1.0A 2N6250 IC=10A;IB=1.25 A 2N6251 IC=10A;IB=1.67 A 2N6249 VCE=150V;IB=0 2N6250 VCE=225V;IB=0 2N6251 VCE=300V;IB=0 VEB=6V; IC=0 2N6249 hFE DC current gain 2N6250 IC=10A ; VCE=3V 2N6251 fT Is/b UNIT V 275 VCE=RatedVCEV;VBE=-1.5V TC=125℃ Emitter cut-off current MAX 350 2N6249 Collector cut-off current TYP. 200 2N6251 VCE(sat) MIN 1.5 V 2.25 V 5.0 10 mA 5.0 mA 1.0 mA 10 50 8 50 6 50 Transition frequency IC=1A ; VCE=10V，f=1MHz 2.5 MHz Second breakdown collector current With base forward biased VCE=30V,t=1.0s, Nonrepetitive 5.8 A Switching times tr Rise time For 2N6249 IC=10A; IB1=-IB2=1.0A;VCC=200V 2.0 μs ts Storage time For 2N6250 IC=10A;IB1=-IB2=1.25A;VCC=200V 3.5 μs tf Fall time For 2N6251 IC=10A;IB1=-IB2=1.67A;VCC=200V 1.0 μs 2 Inchange Semiconductor Product Specification 2N6249 2N6250 2N6251 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3